![NTH4L160N120SC1 NTH4L160N120SC1](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/6129/488%7E340CJ%7E%7E4.jpg)
NTH4L160N120SC1 onsemi
![nth4l160n120sc1-d.pdf](/images/adobe-acrobat.png)
Description: SICFET N-CH 1200V 17.3A TO247
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.3A (Tc)
Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V
auf Bestellung 1817 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
59+ | 8.39 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NTH4L160N120SC1 onsemi
Description: SICFET N-CH 1200V 17.3A TO247, Packaging: Bulk, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17.3A (Tc), Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V, Power Dissipation (Max): 111W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 2.5mA, Supplier Device Package: TO-247-4L, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -15V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V.
Weitere Produktangebote NTH4L160N120SC1 nach Preis ab 7.53 EUR bis 13.96 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
NTH4L160N120SC1 | Hersteller : ON Semiconductor |
![]() |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
NTH4L160N120SC1 | Hersteller : ON Semiconductor |
![]() |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
NTH4L160N120SC1 | Hersteller : ON Semiconductor |
![]() |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
NTH4L160N120SC1 | Hersteller : onsemi |
![]() |
auf Bestellung 900 Stücke: Lieferzeit 129-133 Tag (e) |
|
||||||||||||||||
![]() |
NTH4L160N120SC1 | Hersteller : onsemi |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.3A (Tc) Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V Power Dissipation (Max): 111W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 2.5mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V |
auf Bestellung 900 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
NTH4L160N120SC1 | Hersteller : ONSEMI |
![]() tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: Y-EX Dauer-Drainstrom Id: 17.3A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.1V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 111W Bauform - Transistor: TO-247 Anzahl der Pins: 4Pin(s) productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 20V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.16ohm |
auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
![]() |
NTH4L160N120SC1 | Hersteller : ON Semiconductor |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||||||
![]() |
NTH4L160N120SC1 | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W Case: TO247-4 Mounting: THT Features of semiconductor devices: Kelvin terminal Kind of package: tube Technology: SiC On-state resistance: 224mΩ Type of transistor: N-MOSFET Power dissipation: 55.5W Polarisation: unipolar Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: -15...25V Pulsed drain current: 69A Drain-source voltage: 1.2kV Drain current: 12.3A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||||||
![]() |
NTH4L160N120SC1 | Hersteller : ON Semiconductor |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||||||
![]() |
NTH4L160N120SC1 | Hersteller : ON Semiconductor |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||||||
![]() |
NTH4L160N120SC1 | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W Case: TO247-4 Mounting: THT Features of semiconductor devices: Kelvin terminal Kind of package: tube Technology: SiC On-state resistance: 224mΩ Type of transistor: N-MOSFET Power dissipation: 55.5W Polarisation: unipolar Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: -15...25V Pulsed drain current: 69A Drain-source voltage: 1.2kV Drain current: 12.3A |
Produkt ist nicht verfügbar |