| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| NV24C04MUW3VLTBG | ONSEMI |
 Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; uDFN8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: I2C Memory organisation: 512x8bit Clock frequency: 1MHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape Operating voltage: 1.7...5.5V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| NV24C08DWVLT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; SOIC8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1kx8bit Clock frequency: 1MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape Operating voltage: 1.7...5.5V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NV24C08MUW3VLTBG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; uDFN8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1kx8bit Clock frequency: 1MHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape Operating voltage: 1.7...5.5V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| NV24C128MUW3VTBG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 128bEEPROM; I2C; 16kx8bit; 2.5÷5.5V; 1MHz; uDFN8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 128b EEPROM Interface: I2C Memory organisation: 16kx8bit Clock frequency: 1MHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...125°C Access time: 0.4ns Kind of package: reel; tape Operating voltage: 2.5...5.5V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| NV24C16DTVLT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSSOP8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Clock frequency: 1MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape Operating voltage: 1.7...5.5V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NV24C16DWVLT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; SOIC8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Clock frequency: 1MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape Operating voltage: 1.7...5.5V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| NV24C16MUW3VLTBG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; uDFN8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Clock frequency: 1MHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape Operating voltage: 1.7...5.5V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| NV24C16SNVLT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSOP5 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Clock frequency: 1MHz Mounting: SMD Case: TSOP5 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape Operating voltage: 1.7...5.5V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| NV24C16UVLT2G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; US8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Clock frequency: 1MHz Mounting: SMD Case: US8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape Operating voltage: 1.7...5.5V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| NV24C256MUW3VTBG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: I2C Memory organisation: 32kx8bit Clock frequency: 1MHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...125°C Access time: 40ns Kind of package: reel; tape Operating voltage: 2.5...5.5V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| NV24C32DTVLT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; TSSOP8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 32kb EEPROM Interface: I2C Memory organisation: 4kx8bit Clock frequency: 1MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...125°C Access time: 400ns Kind of package: reel; tape Operating voltage: 1.7...5.5V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| NV24C32DWVLT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; SOIC8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 32kb EEPROM Interface: I2C Memory organisation: 4kx8bit Clock frequency: 1MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 400ns Kind of package: reel; tape Operating voltage: 1.7...5.5V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| NV24C32MUW3VLTBG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; uDFN8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 32kb EEPROM Interface: I2C Memory organisation: 4kx8bit Clock frequency: 1MHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...125°C Access time: 400ns Kind of package: reel; tape Operating voltage: 1.7...5.5V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| NV24C32UVLT2G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; US8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 32kb EEPROM Interface: I2C Memory organisation: 4kx8bit Clock frequency: 1MHz Mounting: SMD Case: US8 Kind of interface: serial Operating temperature: -40...125°C Access time: 400ns Kind of package: reel; tape Operating voltage: 1.7...5.5V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| NV24C512MUW3VTBG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 512kbEEPROM; I2C; 64kx8bit; 2.5÷5.5V; 1MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 512kb EEPROM Interface: I2C Memory organisation: 64kx8bit Clock frequency: 1MHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...125°C Access time: 0.4ns Kind of package: reel; tape Operating voltage: 2.5...5.5V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| NV24C64DTVLT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; TSSOP8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 64kb EEPROM Interface: I2C Memory organisation: 8kx8bit Clock frequency: 1MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...125°C Access time: 400ns Kind of package: reel; tape Operating voltage: 1.7...5.5V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| NV24C64DWVLT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; SOIC8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 64kb EEPROM Interface: I2C Memory organisation: 8kx8bit Clock frequency: 1MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 400ns Kind of package: reel; tape Operating voltage: 1.7...5.5V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NV24C64MUW3VLTBG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; uDFN8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 64kb EEPROM Interface: I2C Memory organisation: 8kx8bit Clock frequency: 1MHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...125°C Access time: 400ns Kind of package: reel; tape Operating voltage: 1.7...5.5V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| NV24C64UVLT2G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; US8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 64kb EEPROM Interface: I2C Memory organisation: 8kx8bit Clock frequency: 1MHz Mounting: SMD Case: US8 Kind of interface: serial Operating temperature: -40...125°C Access time: 400ns Kind of package: reel; tape Operating voltage: 1.7...5.5V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| NV24M01MUW3VTBG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 1MbEEPROM; I2C; 128kx8bit; 2.5÷5.5V; 1MHz; uDFN8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 1Mb EEPROM Interface: I2C Memory organisation: 128kx8bit Clock frequency: 1MHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...125°C Access time: 400ns Kind of package: reel; tape Operating voltage: 2.5...5.5V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| NV25010DWHFT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 1kbEEPROM; SPI; 128x8bit; 2.5÷5.5V; 10MHz; SOIC8 Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory: 1kb EEPROM Case: SOIC8 Mounting: SMD Operating temperature: -40...150°C Kind of package: reel; tape Operating voltage: 2.5...5.5V Kind of interface: serial Memory organisation: 128x8bit Access time: 40ns Clock frequency: 10MHz Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| NV25080DTVLT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 1.7÷5.5V; 20MHz; TSSOP8 Mounting: SMD Interface: SPI Memory: 8kb EEPROM Operating voltage: 1.7...5.5V Clock frequency: 20MHz Kind of memory: EEPROM Operating temperature: -40...125°C Kind of package: reel; tape Case: TSSOP8 Kind of interface: serial Type of integrated circuit: EEPROM memory Memory organisation: 1kx8bit Access time: 75ns Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| NV25080DWHFT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 2.5÷5.5V; 10MHz; SOIC8 Mounting: SMD Interface: SPI Memory: 8kb EEPROM Operating voltage: 2.5...5.5V Clock frequency: 10MHz Kind of memory: EEPROM Operating temperature: -40...150°C Kind of package: reel; tape Case: SOIC8 Kind of interface: serial Type of integrated circuit: EEPROM memory Memory organisation: 1kx8bit Access time: 40ns Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| NV25160DTHFT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2kx8bit; 2.5÷5.5V; 10MHz Mounting: SMD Operating temperature: -40...150°C Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 2kx8bit Access time: 40ns Clock frequency: 10MHz Kind of package: reel; tape Kind of interface: serial Memory: 16kb EEPROM Case: TSSOP8 Operating voltage: 2.5...5.5V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| NV25256DTHFT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Clock frequency: 10MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...150°C Access time: 40ns Kind of package: reel; tape Operating voltage: 2.5...5.5V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| NV25256DWHFT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Clock frequency: 10MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...150°C Access time: 40ns Kind of package: reel; tape Operating voltage: 2.5...5.5V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| NV25256MUW3VTBG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 10MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Clock frequency: 10MHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...125°C Access time: 40ns Kind of package: reel; tape Operating voltage: 1.8...5.5V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| NV25320DTHFT3G | ONSEMI |
NV25320DTHFT3G Serial EEPROM memories - integ. circ. |
Produkt ist nicht verfügbar |
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| NV25320DWHFT3G | ONSEMI |
NV25320DWHFT3G Serial EEPROM memories - integ. circ. |
Produkt ist nicht verfügbar |
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| NV25512MUW3VTBG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 10MHz Type of integrated circuit: EEPROM memory Case: uDFN8 Mounting: SMD Interface: SPI Operating temperature: -40...125°C Kind of package: reel; tape Memory organisation: 64kx8bit Access time: 45ns Clock frequency: 10MHz Kind of interface: serial Memory: 512kb EEPROM Operating voltage: 1.8...5.5V Kind of memory: EEPROM Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| NV25640DTHFT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 2.5÷5.5V; 10MHz Operating temperature: -40...150°C Access time: 40ns Clock frequency: 10MHz Memory organisation: 8kx8bit Kind of memory: EEPROM Interface: SPI Kind of package: reel; tape Type of integrated circuit: EEPROM memory Operating voltage: 2.5...5.5V Case: TSSOP8 Mounting: SMD Kind of interface: serial Memory: 64kb EEPROM Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| NV25640DWHFT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 2.5÷5.5V; 10MHz; SOIC8 Operating temperature: -40...150°C Access time: 40ns Clock frequency: 10MHz Memory organisation: 8kx8bit Kind of memory: EEPROM Interface: SPI Kind of package: reel; tape Type of integrated circuit: EEPROM memory Operating voltage: 2.5...5.5V Case: SOIC8 Mounting: SMD Kind of interface: serial Memory: 64kb EEPROM Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| NV25M01DTUTG | ONSEMI |
NV25M01DTUTG Serial EEPROM memories - integ. circ. |
Produkt ist nicht verfügbar |
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NVD5C688NLT4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 77A; 9W; DPAK Mounting: SMD Case: DPAK Kind of package: reel; tape On-state resistance: 27.4mΩ Type of transistor: N-MOSFET Power dissipation: 9W Polarisation: unipolar Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±16V Pulsed drain current: 77A Drain-source voltage: 60V Drain current: 12A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1961 Stücke: Lieferzeit 7-14 Tag (e) |
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NVF2955T1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 2.3W; SOT223 Mounting: SMD Drain-source voltage: -60V Drain current: -2.6A On-state resistance: 154mΩ Type of transistor: P-MOSFET Power dissipation: 2.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 14.3nC Kind of channel: enhanced Gate-source voltage: ±20V Case: SOT223 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 943 Stücke: Lieferzeit 7-14 Tag (e) |
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NVF3055L108T1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; 1.3W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.4A Power dissipation: 1.3W Case: SOT223 Gate-source voltage: ±15V On-state resistance: 0.12Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 206 Stücke: Lieferzeit 7-14 Tag (e) |
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| NVH4L040N65S3F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 45A Pulsed drain current: 162.5A Power dissipation: 446W Case: TO247 Gate-source voltage: ±30V On-state resistance: 33.8mΩ Mounting: THT Gate charge: 160nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NVHL020N090SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 83A; Idm: 472A; 251W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 900V Drain current: 83A Pulsed drain current: 472A Power dissipation: 251W Case: TO247-3 Gate-source voltage: -10...19V On-state resistance: 28mΩ Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NVJD4401NT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.46A; 0.14W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.46A Power dissipation: 0.14W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±12V On-state resistance: 0.375Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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NVJD5121NT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.212A; 0.25W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.212A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±20V On-state resistance: 1.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
auf Bestellung 210 Stücke: Lieferzeit 7-14 Tag (e) |
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NVMFD5877NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 12W; DFN8; 5x6mm Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Power dissipation: 12W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 39mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Dimensions: 5x6mm Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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NVMFD5C462NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 52A; 25W; DFN8; 5x6mm Mounting: SMD Case: DFN8 Kind of package: reel; tape Power dissipation: 25W Dimensions: 5x6mm Gate-source voltage: ±20V Type of transistor: N-MOSFET Drain-source voltage: 40V Drain current: 52A On-state resistance: 4.7mΩ Polarisation: unipolar Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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NVMFS5113PLT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -45A; 75W; DFN5x6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -45A Power dissipation: 75W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NVMFS5A160PLZT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; 100A; 200W; DFN5x6 Mounting: SMD Drain current: 100A Kind of channel: enhanced Drain-source voltage: -60V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: DFN5x6 On-state resistance: 7.7mΩ Power dissipation: 200W Polarisation: unipolar Anzahl je Verpackung: 1500 Stücke |
Produkt ist nicht verfügbar |
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NVMFS5C430NLAFT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 140A; Idm: 900A; 53W; DFN5x6 Mounting: SMD Case: DFN5x6 Kind of package: reel; tape Power dissipation: 53W Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 1.4mΩ Drain current: 140A Drain-source voltage: 40V Gate charge: 32nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 900A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NVMFS5C604NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 203A; 100W; DFN5x6 Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±20V Case: DFN5x6 Drain-source voltage: 60V Drain current: 203A On-state resistance: 1.2mΩ Type of transistor: N-MOSFET Power dissipation: 100W Polarisation: unipolar Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NVMFS6H800NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 20A; 100W; SO8 Mounting: SMD Drain current: 20A Kind of channel: enhanced Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SO8 On-state resistance: 2.1mΩ Power dissipation: 100W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NVMFS6H818NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 87A; Idm: 900A; 68W; DFN5 Mounting: SMD Drain current: 87A Kind of channel: enhanced Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: DFN5 On-state resistance: 3.7mΩ Pulsed drain current: 900A Power dissipation: 68W Gate charge: 46nC Polarisation: unipolar Anzahl je Verpackung: 1500 Stücke |
Produkt ist nicht verfügbar |
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NVR4003NT3G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 0.37A; 0.69W; SOT23 Mounting: SMD Case: SOT23 Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 0.37A On-state resistance: 1.5Ω Type of transistor: N-MOSFET Power dissipation: 0.69W Kind of package: reel; tape Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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NVR4501NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23 Mounting: SMD Case: SOT23 Polarisation: unipolar Application: automotive industry Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 10A Gate charge: 6nC Drain-source voltage: 20V Drain current: 2.4A On-state resistance: 0.105Ω Type of transistor: N-MOSFET Power dissipation: 1.25W Kind of package: reel; tape Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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NVR5124PLT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -0.67A; 0.19W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.67A Power dissipation: 0.19W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.23Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1583 Stücke: Lieferzeit 7-14 Tag (e) |
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NVR5198NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 27A; 0.4W; SOT23 Mounting: SMD Application: automotive industry Power dissipation: 0.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 5.1nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 27A Case: SOT23 Drain-source voltage: 60V Drain current: 1.2A On-state resistance: 0.205Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1860 Stücke: Lieferzeit 7-14 Tag (e) |
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| NVTFS5116PLTAG | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -10A; 1.6W; WDFN8 Mounting: SMD Case: WDFN8 Kind of package: reel; tape Drain-source voltage: -60V Drain current: -10A On-state resistance: 52mΩ Type of transistor: P-MOSFET Power dissipation: 1.6W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1500 Stücke: Lieferzeit 7-14 Tag (e) |
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NVTJD4001NT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.18A Power dissipation: 0.272W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2940 Stücke: Lieferzeit 7-14 Tag (e) |
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NVTR0202PLT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -400mA; Idm: -1A; 225mW; SOT23 On-state resistance: 1.1Ω Type of transistor: P-MOSFET Power dissipation: 0.225W Polarisation: unipolar Kind of package: reel; tape Gate charge: 2.18nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -1A Mounting: SMD Case: SOT23 Drain-source voltage: -20V Drain current: -0.4A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NVTR4502PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -1.56A; 1.25W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.56A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NVTR4503NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1.5A; 0.73W; SOT23 Polarisation: unipolar Kind of package: reel; tape Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: SOT23 Drain-source voltage: 30V Drain current: 1.5A On-state resistance: 0.14Ω Type of transistor: N-MOSFET Power dissipation: 0.73W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 935 Stücke: Lieferzeit 7-14 Tag (e) |
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| NXH020U90MNF2PTG | ONSEMI |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 900V; 149A; PIM20; Press-in PCB; 352W Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 900V Drain current: 149A Case: PIM20 Topology: NTC thermistor; Vienna Rectifier Electrical mounting: Press-in PCB On-state resistance: 10mΩ Pulsed drain current: 447A Power dissipation: 352W Technology: SiC Gate-source voltage: -8...18V Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NZQA6V8AXV5T1G | ONSEMI |
Category: Transil diodes - arrays Description: Diode: diode arrays; 6.8V; 1.6A; 0.38W; SOT553; Ch: 4; reel,tape; ±5% Type of diode: diode arrays Peak pulse power dissipation: 0.38W Max. off-state voltage: 4.3V Breakdown voltage: 6.8V Max. forward impulse current: 1.6A Tolerance: ±5% Case: SOT553 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: ESD protection Number of channels: 4 Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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NZT560A | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 3A; 1W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 3A Power dissipation: 1W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 75MHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 343 Stücke: Lieferzeit 7-14 Tag (e) |
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| NV24C04MUW3VLTBG |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Anzahl je Verpackung: 3000 Stücke
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| NV24C08DWVLT3G |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Anzahl je Verpackung: 1 Stücke
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| NV24C08MUW3VLTBG |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Anzahl je Verpackung: 3000 Stücke
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| NV24C128MUW3VTBG |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128bEEPROM; I2C; 16kx8bit; 2.5÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 128b EEPROM
Interface: I2C
Memory organisation: 16kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 0.4ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Anzahl je Verpackung: 3000 Stücke
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128bEEPROM; I2C; 16kx8bit; 2.5÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 128b EEPROM
Interface: I2C
Memory organisation: 16kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 0.4ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| NV24C16DTVLT3G |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Anzahl je Verpackung: 1 Stücke
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| NV24C16DWVLT3G |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Anzahl je Verpackung: 3000 Stücke
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| NV24C16MUW3VLTBG |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Anzahl je Verpackung: 3000 Stücke
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| NV24C16SNVLT3G |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSOP5
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: TSOP5
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Anzahl je Verpackung: 3000 Stücke
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSOP5
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: TSOP5
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| NV24C16UVLT2G |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Anzahl je Verpackung: 3000 Stücke
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| NV24C256MUW3VTBG |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Anzahl je Verpackung: 3000 Stücke
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; I2C; 32kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: I2C
Memory organisation: 32kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| NV24C32DTVLT3G |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Anzahl je Verpackung: 3000 Stücke
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| NV24C32DWVLT3G |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Anzahl je Verpackung: 3000 Stücke
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| NV24C32MUW3VLTBG |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Anzahl je Verpackung: 3000 Stücke
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| NV24C32UVLT2G |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Anzahl je Verpackung: 3000 Stücke
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| NV24C512MUW3VTBG |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; I2C; 64kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: I2C
Memory organisation: 64kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 0.4ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Anzahl je Verpackung: 3000 Stücke
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; I2C; 64kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: I2C
Memory organisation: 64kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 0.4ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| NV24C64DTVLT3G |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Anzahl je Verpackung: 3000 Stücke
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| NV24C64DWVLT3G |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Anzahl je Verpackung: 1 Stücke
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| NV24C64MUW3VLTBG |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Anzahl je Verpackung: 3000 Stücke
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| NV24C64UVLT2G |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Anzahl je Verpackung: 3000 Stücke
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| NV24M01MUW3VTBG |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; I2C; 128kx8bit; 2.5÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1Mb EEPROM
Interface: I2C
Memory organisation: 128kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Anzahl je Verpackung: 3000 Stücke
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; I2C; 128kx8bit; 2.5÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1Mb EEPROM
Interface: I2C
Memory organisation: 128kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| NV25010DWHFT3G |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; SPI; 128x8bit; 2.5÷5.5V; 10MHz; SOIC8
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory: 1kb EEPROM
Case: SOIC8
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Kind of interface: serial
Memory organisation: 128x8bit
Access time: 40ns
Clock frequency: 10MHz
Anzahl je Verpackung: 3000 Stücke
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; SPI; 128x8bit; 2.5÷5.5V; 10MHz; SOIC8
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory: 1kb EEPROM
Case: SOIC8
Mounting: SMD
Operating temperature: -40...150°C
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Kind of interface: serial
Memory organisation: 128x8bit
Access time: 40ns
Clock frequency: 10MHz
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| NV25080DTVLT3G |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 1.7÷5.5V; 20MHz; TSSOP8
Mounting: SMD
Interface: SPI
Memory: 8kb EEPROM
Operating voltage: 1.7...5.5V
Clock frequency: 20MHz
Kind of memory: EEPROM
Operating temperature: -40...125°C
Kind of package: reel; tape
Case: TSSOP8
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Memory organisation: 1kx8bit
Access time: 75ns
Anzahl je Verpackung: 3000 Stücke
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 1.7÷5.5V; 20MHz; TSSOP8
Mounting: SMD
Interface: SPI
Memory: 8kb EEPROM
Operating voltage: 1.7...5.5V
Clock frequency: 20MHz
Kind of memory: EEPROM
Operating temperature: -40...125°C
Kind of package: reel; tape
Case: TSSOP8
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Memory organisation: 1kx8bit
Access time: 75ns
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| NV25080DWHFT3G |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 2.5÷5.5V; 10MHz; SOIC8
Mounting: SMD
Interface: SPI
Memory: 8kb EEPROM
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Kind of memory: EEPROM
Operating temperature: -40...150°C
Kind of package: reel; tape
Case: SOIC8
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Memory organisation: 1kx8bit
Access time: 40ns
Anzahl je Verpackung: 3000 Stücke
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 2.5÷5.5V; 10MHz; SOIC8
Mounting: SMD
Interface: SPI
Memory: 8kb EEPROM
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Kind of memory: EEPROM
Operating temperature: -40...150°C
Kind of package: reel; tape
Case: SOIC8
Kind of interface: serial
Type of integrated circuit: EEPROM memory
Memory organisation: 1kx8bit
Access time: 40ns
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| NV25160DTHFT3G |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2kx8bit; 2.5÷5.5V; 10MHz
Mounting: SMD
Operating temperature: -40...150°C
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 2kx8bit
Access time: 40ns
Clock frequency: 10MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 16kb EEPROM
Case: TSSOP8
Operating voltage: 2.5...5.5V
Anzahl je Verpackung: 3000 Stücke
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2kx8bit; 2.5÷5.5V; 10MHz
Mounting: SMD
Operating temperature: -40...150°C
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 2kx8bit
Access time: 40ns
Clock frequency: 10MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 16kb EEPROM
Case: TSSOP8
Operating voltage: 2.5...5.5V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| NV25256DTHFT3G |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 10MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...150°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Anzahl je Verpackung: 3000 Stücke
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 10MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...150°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| NV25256DWHFT3G |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 10MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...150°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Anzahl je Verpackung: 3000 Stücke
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 10MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...150°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| NV25256MUW3VTBG |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 10MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
Anzahl je Verpackung: 3000 Stücke
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Clock frequency: 10MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| NV25320DTHFT3G |
|
Hersteller: ONSEMI
NV25320DTHFT3G Serial EEPROM memories - integ. circ.
NV25320DTHFT3G Serial EEPROM memories - integ. circ.
Produkt ist nicht verfügbar
| NV25320DWHFT3G |
|
Hersteller: ONSEMI
NV25320DWHFT3G Serial EEPROM memories - integ. circ.
NV25320DWHFT3G Serial EEPROM memories - integ. circ.
Produkt ist nicht verfügbar
| NV25512MUW3VTBG |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Case: uDFN8
Mounting: SMD
Interface: SPI
Operating temperature: -40...125°C
Kind of package: reel; tape
Memory organisation: 64kx8bit
Access time: 45ns
Clock frequency: 10MHz
Kind of interface: serial
Memory: 512kb EEPROM
Operating voltage: 1.8...5.5V
Kind of memory: EEPROM
Anzahl je Verpackung: 3000 Stücke
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Case: uDFN8
Mounting: SMD
Interface: SPI
Operating temperature: -40...125°C
Kind of package: reel; tape
Memory organisation: 64kx8bit
Access time: 45ns
Clock frequency: 10MHz
Kind of interface: serial
Memory: 512kb EEPROM
Operating voltage: 1.8...5.5V
Kind of memory: EEPROM
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| NV25640DTHFT3G |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 2.5÷5.5V; 10MHz
Operating temperature: -40...150°C
Access time: 40ns
Clock frequency: 10MHz
Memory organisation: 8kx8bit
Kind of memory: EEPROM
Interface: SPI
Kind of package: reel; tape
Type of integrated circuit: EEPROM memory
Operating voltage: 2.5...5.5V
Case: TSSOP8
Mounting: SMD
Kind of interface: serial
Memory: 64kb EEPROM
Anzahl je Verpackung: 3000 Stücke
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 2.5÷5.5V; 10MHz
Operating temperature: -40...150°C
Access time: 40ns
Clock frequency: 10MHz
Memory organisation: 8kx8bit
Kind of memory: EEPROM
Interface: SPI
Kind of package: reel; tape
Type of integrated circuit: EEPROM memory
Operating voltage: 2.5...5.5V
Case: TSSOP8
Mounting: SMD
Kind of interface: serial
Memory: 64kb EEPROM
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| NV25640DWHFT3G |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 2.5÷5.5V; 10MHz; SOIC8
Operating temperature: -40...150°C
Access time: 40ns
Clock frequency: 10MHz
Memory organisation: 8kx8bit
Kind of memory: EEPROM
Interface: SPI
Kind of package: reel; tape
Type of integrated circuit: EEPROM memory
Operating voltage: 2.5...5.5V
Case: SOIC8
Mounting: SMD
Kind of interface: serial
Memory: 64kb EEPROM
Anzahl je Verpackung: 3000 Stücke
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 2.5÷5.5V; 10MHz; SOIC8
Operating temperature: -40...150°C
Access time: 40ns
Clock frequency: 10MHz
Memory organisation: 8kx8bit
Kind of memory: EEPROM
Interface: SPI
Kind of package: reel; tape
Type of integrated circuit: EEPROM memory
Operating voltage: 2.5...5.5V
Case: SOIC8
Mounting: SMD
Kind of interface: serial
Memory: 64kb EEPROM
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| NV25M01DTUTG |
|
Hersteller: ONSEMI
NV25M01DTUTG Serial EEPROM memories - integ. circ.
NV25M01DTUTG Serial EEPROM memories - integ. circ.
Produkt ist nicht verfügbar
| NVD5C688NLT4G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 77A; 9W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
On-state resistance: 27.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 9W
Polarisation: unipolar
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 77A
Drain-source voltage: 60V
Drain current: 12A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 77A; 9W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
On-state resistance: 27.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 9W
Polarisation: unipolar
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 77A
Drain-source voltage: 60V
Drain current: 12A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1961 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 27+ | 2.66 EUR |
| 42+ | 1.72 EUR |
| 57+ | 1.27 EUR |
| 60+ | 1.2 EUR |
| NVF2955T1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 2.3W; SOT223
Mounting: SMD
Drain-source voltage: -60V
Drain current: -2.6A
On-state resistance: 154mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 14.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT223
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 2.3W; SOT223
Mounting: SMD
Drain-source voltage: -60V
Drain current: -2.6A
On-state resistance: 154mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 14.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT223
Anzahl je Verpackung: 1 Stücke
auf Bestellung 943 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 36+ | 2.03 EUR |
| 53+ | 1.37 EUR |
| 74+ | 0.97 EUR |
| 79+ | 0.92 EUR |
| NVF3055L108T1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.4A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.4A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 206 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 65+ | 1.1 EUR |
| 83+ | 0.86 EUR |
| 101+ | 0.71 EUR |
| 106+ | 0.68 EUR |
| 250+ | 0.65 EUR |
| NVH4L040N65S3F |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 162.5A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 33.8mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 162.5A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 33.8mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| NVHL020N090SC1 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 83A; Idm: 472A; 251W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 83A
Pulsed drain current: 472A
Power dissipation: 251W
Case: TO247-3
Gate-source voltage: -10...19V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 83A; Idm: 472A; 251W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 83A
Pulsed drain current: 472A
Power dissipation: 251W
Case: TO247-3
Gate-source voltage: -10...19V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| NVJD4401NT1G |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.46A; 0.14W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.46A
Power dissipation: 0.14W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±12V
On-state resistance: 0.375Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.46A; 0.14W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.46A
Power dissipation: 0.14W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±12V
On-state resistance: 0.375Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| NVJD5121NT1G |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.212A; 0.25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.212A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.212A; 0.25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.212A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 210 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 210+ | 0.34 EUR |
| 380+ | 0.19 EUR |
| 3000+ | 0.11 EUR |
| NVMFD5877NLT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 12W; DFN8; 5x6mm
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 12W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Dimensions: 5x6mm
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 12W; DFN8; 5x6mm
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 12W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Dimensions: 5x6mm
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| NVMFD5C462NLT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 52A; 25W; DFN8; 5x6mm
Mounting: SMD
Case: DFN8
Kind of package: reel; tape
Power dissipation: 25W
Dimensions: 5x6mm
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 52A
On-state resistance: 4.7mΩ
Polarisation: unipolar
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 52A; 25W; DFN8; 5x6mm
Mounting: SMD
Case: DFN8
Kind of package: reel; tape
Power dissipation: 25W
Dimensions: 5x6mm
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 52A
On-state resistance: 4.7mΩ
Polarisation: unipolar
Kind of channel: enhanced
Produkt ist nicht verfügbar
| NVMFS5113PLT1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -45A; 75W; DFN5x6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -45A
Power dissipation: 75W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -45A; 75W; DFN5x6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -45A
Power dissipation: 75W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| NVMFS5A160PLZT1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; 100A; 200W; DFN5x6
Mounting: SMD
Drain current: 100A
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DFN5x6
On-state resistance: 7.7mΩ
Power dissipation: 200W
Polarisation: unipolar
Anzahl je Verpackung: 1500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; 100A; 200W; DFN5x6
Mounting: SMD
Drain current: 100A
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DFN5x6
On-state resistance: 7.7mΩ
Power dissipation: 200W
Polarisation: unipolar
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
| NVMFS5C430NLAFT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 140A; Idm: 900A; 53W; DFN5x6
Mounting: SMD
Case: DFN5x6
Kind of package: reel; tape
Power dissipation: 53W
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.4mΩ
Drain current: 140A
Drain-source voltage: 40V
Gate charge: 32nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 900A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 140A; Idm: 900A; 53W; DFN5x6
Mounting: SMD
Case: DFN5x6
Kind of package: reel; tape
Power dissipation: 53W
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 1.4mΩ
Drain current: 140A
Drain-source voltage: 40V
Gate charge: 32nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 900A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| NVMFS5C604NLT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 203A; 100W; DFN5x6
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: DFN5x6
Drain-source voltage: 60V
Drain current: 203A
On-state resistance: 1.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 203A; 100W; DFN5x6
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: DFN5x6
Drain-source voltage: 60V
Drain current: 203A
On-state resistance: 1.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| NVMFS6H800NT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 20A; 100W; SO8
Mounting: SMD
Drain current: 20A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SO8
On-state resistance: 2.1mΩ
Power dissipation: 100W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 20A; 100W; SO8
Mounting: SMD
Drain current: 20A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SO8
On-state resistance: 2.1mΩ
Power dissipation: 100W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| NVMFS6H818NT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 87A; Idm: 900A; 68W; DFN5
Mounting: SMD
Drain current: 87A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DFN5
On-state resistance: 3.7mΩ
Pulsed drain current: 900A
Power dissipation: 68W
Gate charge: 46nC
Polarisation: unipolar
Anzahl je Verpackung: 1500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 87A; Idm: 900A; 68W; DFN5
Mounting: SMD
Drain current: 87A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DFN5
On-state resistance: 3.7mΩ
Pulsed drain current: 900A
Power dissipation: 68W
Gate charge: 46nC
Polarisation: unipolar
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
| NVR4003NT3G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.37A; 0.69W; SOT23
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 0.37A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.69W
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.37A; 0.69W; SOT23
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 0.37A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.69W
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| NVR4501NT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Application: automotive industry
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 10A
Gate charge: 6nC
Drain-source voltage: 20V
Drain current: 2.4A
On-state resistance: 0.105Ω
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Application: automotive industry
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 10A
Gate charge: 6nC
Drain-source voltage: 20V
Drain current: 2.4A
On-state resistance: 0.105Ω
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| NVR5124PLT1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.67A; 0.19W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.67A
Power dissipation: 0.19W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.67A; 0.19W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.67A
Power dissipation: 0.19W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1583 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 158+ | 0.45 EUR |
| 214+ | 0.33 EUR |
| 280+ | 0.26 EUR |
| 296+ | 0.24 EUR |
| NVR5198NLT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 27A; 0.4W; SOT23
Mounting: SMD
Application: automotive industry
Power dissipation: 0.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 27A
Case: SOT23
Drain-source voltage: 60V
Drain current: 1.2A
On-state resistance: 0.205Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 27A; 0.4W; SOT23
Mounting: SMD
Application: automotive industry
Power dissipation: 0.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 27A
Case: SOT23
Drain-source voltage: 60V
Drain current: 1.2A
On-state resistance: 0.205Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1860 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 125+ | 0.57 EUR |
| 210+ | 0.34 EUR |
| 244+ | 0.29 EUR |
| 360+ | 0.2 EUR |
| 382+ | 0.19 EUR |
| 1000+ | 0.18 EUR |
| NVTFS5116PLTAG |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -10A; 1.6W; WDFN8
Mounting: SMD
Case: WDFN8
Kind of package: reel; tape
Drain-source voltage: -60V
Drain current: -10A
On-state resistance: 52mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -10A; 1.6W; WDFN8
Mounting: SMD
Case: WDFN8
Kind of package: reel; tape
Drain-source voltage: -60V
Drain current: -10A
On-state resistance: 52mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 75+ | 0.96 EUR |
| 83+ | 0.87 EUR |
| 107+ | 0.67 EUR |
| 114+ | 0.63 EUR |
| NVTJD4001NT1G |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.18A
Power dissipation: 0.272W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.18A
Power dissipation: 0.272W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2940 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 179+ | 0.4 EUR |
| 206+ | 0.35 EUR |
| 236+ | 0.3 EUR |
| 374+ | 0.19 EUR |
| 414+ | 0.17 EUR |
| 491+ | 0.15 EUR |
| 521+ | 0.14 EUR |
| NVTR0202PLT1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -400mA; Idm: -1A; 225mW; SOT23
On-state resistance: 1.1Ω
Type of transistor: P-MOSFET
Power dissipation: 0.225W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2.18nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -1A
Mounting: SMD
Case: SOT23
Drain-source voltage: -20V
Drain current: -0.4A
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -400mA; Idm: -1A; 225mW; SOT23
On-state resistance: 1.1Ω
Type of transistor: P-MOSFET
Power dissipation: 0.225W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2.18nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -1A
Mounting: SMD
Case: SOT23
Drain-source voltage: -20V
Drain current: -0.4A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| NVTR4502PT1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.56A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.56A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.56A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.56A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| NVTR4503NT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.5A; 0.73W; SOT23
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 1.5A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Power dissipation: 0.73W
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.5A; 0.73W; SOT23
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 1.5A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Power dissipation: 0.73W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 935 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 173+ | 0.41 EUR |
| 247+ | 0.29 EUR |
| 307+ | 0.23 EUR |
| 432+ | 0.17 EUR |
| 662+ | 0.11 EUR |
| 700+ | 0.1 EUR |
| 3000+ | 0.099 EUR |
| NXH020U90MNF2PTG |
|
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 900V; 149A; PIM20; Press-in PCB; 352W
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 900V
Drain current: 149A
Case: PIM20
Topology: NTC thermistor; Vienna Rectifier
Electrical mounting: Press-in PCB
On-state resistance: 10mΩ
Pulsed drain current: 447A
Power dissipation: 352W
Technology: SiC
Gate-source voltage: -8...18V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 900V; 149A; PIM20; Press-in PCB; 352W
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 900V
Drain current: 149A
Case: PIM20
Topology: NTC thermistor; Vienna Rectifier
Electrical mounting: Press-in PCB
On-state resistance: 10mΩ
Pulsed drain current: 447A
Power dissipation: 352W
Technology: SiC
Gate-source voltage: -8...18V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| NZQA6V8AXV5T1G |
|
Hersteller: ONSEMI
Category: Transil diodes - arrays
Description: Diode: diode arrays; 6.8V; 1.6A; 0.38W; SOT553; Ch: 4; reel,tape; ±5%
Type of diode: diode arrays
Peak pulse power dissipation: 0.38W
Max. off-state voltage: 4.3V
Breakdown voltage: 6.8V
Max. forward impulse current: 1.6A
Tolerance: ±5%
Case: SOT553
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 4
Anzahl je Verpackung: 5 Stücke
Category: Transil diodes - arrays
Description: Diode: diode arrays; 6.8V; 1.6A; 0.38W; SOT553; Ch: 4; reel,tape; ±5%
Type of diode: diode arrays
Peak pulse power dissipation: 0.38W
Max. off-state voltage: 4.3V
Breakdown voltage: 6.8V
Max. forward impulse current: 1.6A
Tolerance: ±5%
Case: SOT553
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 4
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| NZT560A |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 75MHz
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 1W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 75MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 343 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 143+ | 0.5 EUR |
| 161+ | 0.44 EUR |
| 196+ | 0.37 EUR |
| 207+ | 0.35 EUR |
| 4000+ | 0.33 EUR |