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NVTJD4001NT1G onsemi
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Description: MOSFET 2N-CH 30V 0.25A SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 272mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 250mA
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 462000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.12 EUR |
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Technische Details NVTJD4001NT1G onsemi
Description: MOSFET 2N-CH 30V 0.25A SC88, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 272mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 250mA, Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V, Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V, Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V, Vgs(th) (Max) @ Id: 1.5V @ 100µA, Supplier Device Package: SC-88/SC70-6/SOT-363, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NVTJD4001NT1G nach Preis ab 0.12 EUR bis 0.55 EUR
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NVTJD4001NT1G | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.18A Power dissipation: 0.272W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2940 Stücke: Lieferzeit 7-14 Tag (e) |
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NVTJD4001NT1G | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.18A Power dissipation: 0.272W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2940 Stücke: Lieferzeit 14-21 Tag (e) |
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NVTJD4001NT1G | Hersteller : onsemi |
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auf Bestellung 1143641 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTJD4001NT1G | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 272mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 250mA Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 464325 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTJD4001NT1G | Hersteller : ON Semiconductor |
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