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NTLJD3119CTBG ONSEMI ntljd3119c-d.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Case: WDFN6
Mounting: SMD
On-state resistance: 65/100mΩ
Kind of package: reel; tape
Power dissipation: 1.5W
Kind of transistor: complementary pair
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
Drain current: 2.8/-2.4A
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTLUD4C26NTAG ONSEMI Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.3A; 1.7W; uDFN6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.3A
Power dissipation: 1.7W
Case: uDFN6
Gate-source voltage: ±12V
On-state resistance: 21mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
NTMD6N02R2G NTMD6N02R2G ONSEMI ntmd6n02r2-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.5A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 35mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
NTMD6P02R2G NTMD6P02R2G ONSEMI ntmd6p02r2-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 33mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
NTMFS5C604NLT1G NTMFS5C604NLT1G ONSEMI ntmfs5c604nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 203A; 100W; DFN5x6
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: DFN5x6
Drain-source voltage: 60V
Drain current: 203A
On-state resistance: 1.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTMFS5C670NLT1G NTMFS5C670NLT1G ONSEMI NTMFS5C670NL.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 440A; 1.8W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 440A
Power dissipation: 1.8W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 258 Stücke:
Lieferzeit 7-14 Tag (e)
23+3.17 EUR
36+ 2.02 EUR
47+ 1.53 EUR
50+ 1.44 EUR
Mindestbestellmenge: 23
NTMFS5C673NLT1G NTMFS5C673NLT1G ONSEMI ntmfs5c673nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; 23W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Power dissipation: 23W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTMS10P02R2G NTMS10P02R2G ONSEMI ntms10p02r2-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8
Mounting: SMD
Case: SO8
Power dissipation: 2.5W
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -8A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTPF190N65S3HF ONSEMI ntpf190n65s3hf-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 409 Stücke:
Lieferzeit 7-14 Tag (e)
21+3.53 EUR
150+ 3.06 EUR
Mindestbestellmenge: 21
NTR0202PLT1G NTR0202PLT1G ONSEMI NTR0202PL.PDF Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.4A; 0.225W; SOT23
On-state resistance: 0.55Ω
Type of transistor: P-MOSFET
Power dissipation: 0.225W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2.18nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SOT23
Drain-source voltage: -20V
Drain current: -0.4A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTR1P02LT1G ONSEMI ntr1p02lt1-d.pdf NTR1P02LT1G SMD P channel transistors
auf Bestellung 193 Stücke:
Lieferzeit 7-14 Tag (e)
193+0.37 EUR
496+ 0.14 EUR
3000+ 0.093 EUR
Mindestbestellmenge: 193
NTR1P02LT3G NTR1P02LT3G ONSEMI ntr1p02lt1-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; 0.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.3A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.22Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
NTR1P02T1G ONSEMI ntr1p02t1-d.pdf NTR1P02T1G SMD P channel transistors
Produkt ist nicht verfügbar
NTR2101PT1G NTR2101PT1G ONSEMI ntr2101p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -3A; 0.96W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -3A
Power dissipation: 0.96W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 52mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3659 Stücke:
Lieferzeit 7-14 Tag (e)
185+0.39 EUR
340+ 0.21 EUR
380+ 0.19 EUR
465+ 0.16 EUR
490+ 0.15 EUR
Mindestbestellmenge: 185
NTR3A052PZT1G NTR3A052PZT1G ONSEMI ntr3a052pz-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.6A; 0.72W; SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -2.6A
On-state resistance: 47mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.72W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±8V
Case: SOT23
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTR3C21NZT1G NTR3C21NZT1G ONSEMI ntr3c21nz-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.6A; 0.47W; SOT23
Mounting: SMD
Kind of package: reel; tape
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±8V
Polarisation: unipolar
Power dissipation: 0.47W
Type of transistor: N-MOSFET
On-state resistance: 24mΩ
Drain current: 2.6A
Drain-source voltage: 20V
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
NTR4003NT1G NTR4003NT1G ONSEMI NTR4003N.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.56A; 0.69W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 0.56A
On-state resistance: 2Ω
Type of transistor: N-MOSFET
Power dissipation: 0.69W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.15nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3147 Stücke:
Lieferzeit 7-14 Tag (e)
893+0.08 EUR
995+ 0.072 EUR
1286+ 0.056 EUR
1359+ 0.053 EUR
Mindestbestellmenge: 893
NTR4003NT3G NTR4003NT3G ONSEMI ntr4003n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.4A; 0.83W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.4A
Power dissipation: 0.83W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
NTR4101PT1G NTR4101PT1G ONSEMI ntr4101.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.7A; 0.21W; SOT23
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±8V
Gate charge: 7.5nC
Drain-source voltage: -20V
Drain current: -1.7A
On-state resistance: 0.21Ω
Type of transistor: P-MOSFET
Power dissipation: 0.21W
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 59 Stücke:
Lieferzeit 7-14 Tag (e)
59+1.22 EUR
131+ 0.54 EUR
360+ 0.2 EUR
Mindestbestellmenge: 59
NTR4170NT1G NTR4170NT1G ONSEMI ntr4170n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.7A; 0.48W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.7A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 105 Stücke:
Lieferzeit 7-14 Tag (e)
105+0.69 EUR
267+ 0.27 EUR
1000+ 0.16 EUR
Mindestbestellmenge: 105
NTR4171PT1G NTR4171PT1G ONSEMI NTR4171P.PDF Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±12V
Gate charge: 7.4nC
Drain-source voltage: -30V
Drain current: -1.5A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET
Power dissipation: 1.25W
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3027 Stücke:
Lieferzeit 7-14 Tag (e)
161+0.44 EUR
200+ 0.36 EUR
302+ 0.24 EUR
319+ 0.22 EUR
Mindestbestellmenge: 161
NTR4501NT1G NTR4501NT1G ONSEMI NxR4501N.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.4A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3744 Stücke:
Lieferzeit 7-14 Tag (e)
353+0.2 EUR
516+ 0.14 EUR
625+ 0.11 EUR
695+ 0.1 EUR
736+ 0.097 EUR
3000+ 0.096 EUR
Mindestbestellmenge: 353
NTR4502PT1G NTR4502PT1G ONSEMI NTR4502P.PDF Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.56A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.56A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTR5103NT1G NTR5103NT1G ONSEMI NTR5103N.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.31A; 0.42W; SOT23
Drain-source voltage: 60V
Drain current: 0.31A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Power dissipation: 0.42W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 0.81nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: SMD
Case: SOT23
Anzahl je Verpackung: 1 Stücke
auf Bestellung 13190 Stücke:
Lieferzeit 7-14 Tag (e)
250+0.29 EUR
363+ 0.2 EUR
777+ 0.092 EUR
1722+ 0.042 EUR
1822+ 0.039 EUR
Mindestbestellmenge: 250
NTR5105PT1G NTR5105PT1G ONSEMI ntr5105p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.141A; 0.347W; SOT23
Drain-source voltage: -60V
Drain current: -0.141A
On-state resistance: 5Ω
Type of transistor: P-MOSFET
Power dissipation: 0.347W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SOT23
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1285 Stücke:
Lieferzeit 7-14 Tag (e)
425+0.17 EUR
695+ 0.1 EUR
790+ 0.091 EUR
890+ 0.081 EUR
940+ 0.076 EUR
Mindestbestellmenge: 425
NTR5198NLT1G NTR5198NLT1G ONSEMI ntr5198nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.6A; 0.6W; SOT23
Mounting: SMD
Power dissipation: 0.6W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT23
Drain-source voltage: 60V
Drain current: 1.6A
On-state resistance: 155mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3262 Stücke:
Lieferzeit 7-14 Tag (e)
162+0.44 EUR
230+ 0.31 EUR
295+ 0.24 EUR
424+ 0.17 EUR
650+ 0.11 EUR
685+ 0.1 EUR
Mindestbestellmenge: 162
NTRV4101PT1G ONSEMI ntr4101p-d.pdf NTRV4101PT1G SMD P channel transistors
Produkt ist nicht verfügbar
NTS2101PT1G NTS2101PT1G ONSEMI nts2101p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -1.1A; 0.29W; SC70,SOT323
Drain-source voltage: -8V
Drain current: -1.1A
On-state resistance: 0.1Ω
Type of transistor: P-MOSFET
Power dissipation: 0.29W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: SC70; SOT323
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
NTS260SFT1G NTS260SFT1G ONSEMI NTS260SF.PDF Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2A; SOD123F; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SOD123F
Max. off-state voltage: 60V
Max. load current: 4A
Max. forward voltage: 0.65V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 25A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTS4001NT1G NTS4001NT1G ONSEMI nts4001n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.2A; 0.33W; SC70,SOT323
Case: SC70; SOT323
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: 30V
Drain current: 0.2A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.33W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2279 Stücke:
Lieferzeit 7-14 Tag (e)
425+0.17 EUR
585+ 0.12 EUR
660+ 0.11 EUR
760+ 0.094 EUR
810+ 0.089 EUR
Mindestbestellmenge: 425
NTS4101PT1G NTS4101PT1G ONSEMI NTS4101P.PDF Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.62A; 0.329W; SC70,SOT323
Drain-source voltage: -20V
Drain current: -0.62A
On-state resistance: 0.16Ω
Type of transistor: P-MOSFET
Power dissipation: 0.329W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 6.4nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: SC70; SOT323
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3007 Stücke:
Lieferzeit 7-14 Tag (e)
481+0.15 EUR
538+ 0.13 EUR
698+ 0.1 EUR
738+ 0.097 EUR
Mindestbestellmenge: 481
NTS4173PT1G NTS4173PT1G ONSEMI nts4173p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.8A; Idm: -5A; 290mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.8A
Pulsed drain current: -5A
Power dissipation: 0.29W
Case: SC70; SOT323
Gate-source voltage: ±12V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 10.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
NTS4409NT1G NTS4409NT1G ONSEMI NTS4409N.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.75A; 0.28W; SC70,SOT323
Drain-source voltage: 25V
Drain current: 0.75A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 0.28W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.2nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: SC70; SOT323
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2109 Stücke:
Lieferzeit 7-14 Tag (e)
148+0.49 EUR
184+ 0.39 EUR
254+ 0.28 EUR
296+ 0.24 EUR
441+ 0.16 EUR
466+ 0.15 EUR
Mindestbestellmenge: 148
NTTFS5116PLTAG ONSEMI nttfs5116pl-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -14A; 20W; WDFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -14A
Power dissipation: 20W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
NTUD3169CZT5G ONSEMI ntud3169cz-d.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 0.16/-0.14A
Power dissipation: 0.125W
Case: SOT963
Gate-source voltage: ±8V
On-state resistance: 1.5/5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 8000 Stücke
Produkt ist nicht verfügbar
NTUD3170NZT5G ONSEMI ntud3170nz-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.16A; 0.125W; SOT963
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.16A
Power dissipation: 0.125W
Case: SOT963
Gate-source voltage: ±8V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 8000 Stücke
Produkt ist nicht verfügbar
NTZD3152PT1G NTZD3152PT1G ONSEMI NTZD3152P.PDF Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.43A; 0.25W; SOT563
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.43A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±6V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2950 Stücke:
Lieferzeit 7-14 Tag (e)
167+0.43 EUR
211+ 0.34 EUR
257+ 0.28 EUR
360+ 0.2 EUR
477+ 0.15 EUR
504+ 0.14 EUR
Mindestbestellmenge: 167
NTZD3154NT1G NTZD3154NT1G ONSEMI NTZD3154N.PDF Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.54A; 0.25W; SOT563
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.54A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±7V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3373 Stücke:
Lieferzeit 7-14 Tag (e)
139+0.51 EUR
203+ 0.35 EUR
311+ 0.23 EUR
374+ 0.19 EUR
543+ 0.13 EUR
574+ 0.12 EUR
Mindestbestellmenge: 139
NTZD3155CT1G NTZD3155CT1G ONSEMI NTZD3155C-DTE.PDF Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 0.39/-0.31A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±6V
On-state resistance: 400/500mΩ
Mounting: SMD
Gate charge: 1.5/1.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5676 Stücke:
Lieferzeit 7-14 Tag (e)
162+0.44 EUR
272+ 0.26 EUR
391+ 0.18 EUR
496+ 0.14 EUR
1000+ 0.13 EUR
Mindestbestellmenge: 162
NTZD3155CT2G NTZD3155CT2G ONSEMI ntzd3155c-d.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 0.39/-0.31A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±6V
On-state resistance: 0.55/0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3469 Stücke:
Lieferzeit 7-14 Tag (e)
167+0.43 EUR
211+ 0.34 EUR
290+ 0.25 EUR
538+ 0.13 EUR
582+ 0.12 EUR
Mindestbestellmenge: 167
NTZD5110NT1G NTZD5110NT1G ONSEMI ntzd5110n-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.225A; 0.28W; SOT563F
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.225A
Power dissipation: 0.28W
Case: SOT563F
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
NTZS3151PT1G ONSEMI ntzs3151p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.76A; 0.21W; SOT563F
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.76A
Power dissipation: 0.21W
Case: SOT563F
Gate-source voltage: ±8V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
NUD3124LT1G NUD3124LT1G ONSEMI nud3124-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.2A; Ch: 1; N-Channel; SMD; SOT23
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 0.2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT23
On-state resistance: 0.8Ω
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NUD3160DMT1G NUD3160DMT1G ONSEMI nud3160-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.2A; Ch: 2; N-Channel; SMD; SC74
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 0.2A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SC74
On-state resistance: 1.8Ω
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NUD3160LT1G NUD3160LT1G ONSEMI nud3160-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.2A; Ch: 2; N-Channel; SMD; SOT23
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 0.2A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SOT23
On-state resistance: 1.8Ω
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NUD4001DR2G NUD4001DR2G ONSEMI NUD4001.PDF description Category: LED drivers
Description: IC: driver; LED controller; SO8; 500mA; 28V; Ch: 1; PWM
Type of integrated circuit: driver
Kind of integrated circuit: LED controller
Case: SO8
Output current: 0.5A
Output voltage: 28V
Number of channels: 1
Integrated circuit features: PWM
Mounting: SMD
Operating temperature: -40...125°C
Anzahl je Verpackung: 1 Stücke
auf Bestellung 566 Stücke:
Lieferzeit 7-14 Tag (e)
60+1.2 EUR
73+ 0.99 EUR
105+ 0.69 EUR
109+ 0.66 EUR
Mindestbestellmenge: 60
NUD4700SNT1G NUD4700SNT1G ONSEMI NUD4700.PDF Category: LED drivers
Description: IC: driver; current shunt; POWERMITE; 1V; 1.56W; 1.3A
Type of integrated circuit: driver
Kind of integrated circuit: current shunt
Case: POWERMITE
Mounting: SMD
Operating temperature: -40...150°C
Operating voltage: 1V
Power dissipation: 1.56W
Operating current: 1.3A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
NUF2042XV6T1G NUF2042XV6T1G ONSEMI NUF2042XV6T1G.PDF Category: Filters - integrated circuits
Description: Filter: digital; line terminator; lowpass,EMI; SOT563; Ch: 2
Type of filter: digital
Kind of filter: EMI; lowpass
Mounting: SMD
Case: SOT563
Number of channels: 2
Application: USB port ESD protection
Kind of integrated circuit: line terminator
Anzahl je Verpackung: 1 Stücke
auf Bestellung 108 Stücke:
Lieferzeit 7-14 Tag (e)
108+0.66 EUR
132+ 0.54 EUR
500+ 0.33 EUR
2000+ 0.32 EUR
Mindestbestellmenge: 108
NUF4401MNT1G ONSEMI nuf4401mn-d.pdf Category: Filters - integrated circuits
Description: Filter: digital; EMI; DFN8; Ch: 4
Type of filter: digital
Kind of filter: EMI
Mounting: SMD
Case: DFN8
Number of channels: 4
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NUP1105LT1G ONSEMI nup1105l-d.pdf NUP1105LT1G Transil diodes - arrays
Produkt ist nicht verfügbar
NUP1301ML3T1G NUP1301ML3T1G ONSEMI NUP1301ML3T1G.PDF Category: Transil diodes - arrays
Description: Diode: TVS array; double series; SOT23; Features: ESD protection
Type of diode: TVS array
Semiconductor structure: double series
Mounting: SMD
Case: SOT23
Max. off-state voltage: 70V
Features of semiconductor devices: ESD protection
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
auf Bestellung 113 Stücke:
Lieferzeit 7-14 Tag (e)
115+0.61 EUR
155+ 0.46 EUR
415+ 0.17 EUR
3000+ 0.1 EUR
Mindestbestellmenge: 115
NUP2105LT1G NUP2105LT1G ONSEMI NUP2105L.PDF Category: Transil diodes - arrays
Description: Diode: TVS array; 26.2÷32V; 350W; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...32V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Features of semiconductor devices: ESD protection
Kind of package: reel; tape
Application: CAN
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4819 Stücke:
Lieferzeit 7-14 Tag (e)
285+0.25 EUR
358+ 0.2 EUR
417+ 0.17 EUR
500+ 0.14 EUR
3000+ 0.13 EUR
Mindestbestellmenge: 285
NUP2201MR6T1G NUP2201MR6T1G ONSEMI NUP2201MR6T1G-DTE.PDF Category: Transil diodes - arrays
Description: Diode: TVS array; 6V; 25A; 500W; unidirectional; TSOP6; Ch: 2
Mounting: SMD
Kind of package: reel; tape
Case: TSOP6
Peak pulse power dissipation: 0.5kW
Semiconductor structure: unidirectional
Max. forward impulse current: 25A
Breakdown voltage: 6V
Leakage current: 5µA
Number of channels: 2
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1088 Stücke:
Lieferzeit 7-14 Tag (e)
125+0.57 EUR
159+ 0.45 EUR
219+ 0.33 EUR
232+ 0.31 EUR
3000+ 0.3 EUR
Mindestbestellmenge: 125
NUP2301MW6T1G NUP2301MW6T1G ONSEMI NUP2301MW6T1G.PDF Category: Transil diodes - arrays
Description: Diode: diode arrays; SC88; Features: ESD protection; Ch: 2
Case: SC88
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 70V
Features of semiconductor devices: ESD protection
Number of channels: 2
Type of diode: diode arrays
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2818 Stücke:
Lieferzeit 7-14 Tag (e)
191+0.38 EUR
220+ 0.33 EUR
265+ 0.27 EUR
281+ 0.26 EUR
3000+ 0.25 EUR
Mindestbestellmenge: 191
NUP4114HMR6T1G NUP4114HMR6T1G ONSEMI NUP4114.PDF Category: Transil diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; TSOP6; Features: ESD protection; Ch: 4
Mounting: SMD
Kind of package: reel; tape
Case: TSOP6
Max. off-state voltage: 5.5V
Max. forward impulse current: 12A
Breakdown voltage: 6.5V
Leakage current: 1µA
Number of channels: 4
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NUP4114UCLW1T2G NUP4114UCLW1T2G ONSEMI NUP4114.PDF Category: Transil diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; SC88; Features: ESD protection; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.5V
Max. forward impulse current: 12A
Mounting: SMD
Case: SC88
Max. off-state voltage: 5.5V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 991 Stücke:
Lieferzeit 7-14 Tag (e)
206+0.35 EUR
334+ 0.21 EUR
371+ 0.19 EUR
463+ 0.15 EUR
Mindestbestellmenge: 206
NUP4114UCW1T2G NUP4114UCW1T2G ONSEMI NUP4114.PDF Category: Transil diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; SC88; Features: ESD protection; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.5V
Max. forward impulse current: 12A
Mounting: SMD
Case: SC88
Max. off-state voltage: 5.5V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1777 Stücke:
Lieferzeit 7-14 Tag (e)
82+0.87 EUR
188+ 0.38 EUR
313+ 0.23 EUR
350+ 0.2 EUR
455+ 0.16 EUR
481+ 0.15 EUR
Mindestbestellmenge: 82
NUP4301MR6T1G NUP4301MR6T1G ONSEMI NUP4301MR6T1G.PDF Category: Transil diodes - arrays
Description: Diode: diode arrays; SC74; Features: ESD protection; Ch: 4
Mounting: SMD
Kind of package: reel; tape
Case: SC74
Max. off-state voltage: 70V
Number of channels: 4
Type of diode: diode arrays
Features of semiconductor devices: ESD protection
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2940 Stücke:
Lieferzeit 7-14 Tag (e)
173+0.41 EUR
219+ 0.33 EUR
281+ 0.25 EUR
439+ 0.16 EUR
643+ 0.11 EUR
1000+ 0.1 EUR
Mindestbestellmenge: 173
NV24C04DTVLT3G ONSEMI NV24C04LV-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
NV24C04MUW3VLTBG ONSEMI NV24C04LV-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
NTLJD3119CTBG ntljd3119c-d.pdf
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Case: WDFN6
Mounting: SMD
On-state resistance: 65/100mΩ
Kind of package: reel; tape
Power dissipation: 1.5W
Kind of transistor: complementary pair
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
Drain current: 2.8/-2.4A
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTLUD4C26NTAG
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.3A; 1.7W; uDFN6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.3A
Power dissipation: 1.7W
Case: uDFN6
Gate-source voltage: ±12V
On-state resistance: 21mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
NTMD6N02R2G ntmd6n02r2-d.pdf
NTMD6N02R2G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.5A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 35mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
NTMD6P02R2G ntmd6p02r2-d.pdf
NTMD6P02R2G
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 33mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
NTMFS5C604NLT1G ntmfs5c604nl-d.pdf
NTMFS5C604NLT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 203A; 100W; DFN5x6
Mounting: SMD
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: DFN5x6
Drain-source voltage: 60V
Drain current: 203A
On-state resistance: 1.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTMFS5C670NLT1G NTMFS5C670NL.PDF
NTMFS5C670NLT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 440A; 1.8W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 440A
Power dissipation: 1.8W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 258 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
23+3.17 EUR
36+ 2.02 EUR
47+ 1.53 EUR
50+ 1.44 EUR
Mindestbestellmenge: 23
NTMFS5C673NLT1G ntmfs5c673nl-d.pdf
NTMFS5C673NLT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; 23W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Power dissipation: 23W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTMS10P02R2G ntms10p02r2-d.pdf
NTMS10P02R2G
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8
Mounting: SMD
Case: SO8
Power dissipation: 2.5W
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -8A
On-state resistance: 14mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTPF190N65S3HF ntpf190n65s3hf-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 409 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
21+3.53 EUR
150+ 3.06 EUR
Mindestbestellmenge: 21
NTR0202PLT1G NTR0202PL.PDF
NTR0202PLT1G
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.4A; 0.225W; SOT23
On-state resistance: 0.55Ω
Type of transistor: P-MOSFET
Power dissipation: 0.225W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2.18nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SOT23
Drain-source voltage: -20V
Drain current: -0.4A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTR1P02LT1G ntr1p02lt1-d.pdf
Hersteller: ONSEMI
NTR1P02LT1G SMD P channel transistors
auf Bestellung 193 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
193+0.37 EUR
496+ 0.14 EUR
3000+ 0.093 EUR
Mindestbestellmenge: 193
NTR1P02LT3G ntr1p02lt1-d.pdf
NTR1P02LT3G
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; 0.4W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.3A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.22Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
NTR1P02T1G ntr1p02t1-d.pdf
Hersteller: ONSEMI
NTR1P02T1G SMD P channel transistors
Produkt ist nicht verfügbar
NTR2101PT1G ntr2101p-d.pdf
NTR2101PT1G
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -3A; 0.96W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -3A
Power dissipation: 0.96W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 52mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3659 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
185+0.39 EUR
340+ 0.21 EUR
380+ 0.19 EUR
465+ 0.16 EUR
490+ 0.15 EUR
Mindestbestellmenge: 185
NTR3A052PZT1G ntr3a052pz-d.pdf
NTR3A052PZT1G
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.6A; 0.72W; SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -2.6A
On-state resistance: 47mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.72W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±8V
Case: SOT23
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTR3C21NZT1G ntr3c21nz-d.pdf
NTR3C21NZT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.6A; 0.47W; SOT23
Mounting: SMD
Kind of package: reel; tape
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±8V
Polarisation: unipolar
Power dissipation: 0.47W
Type of transistor: N-MOSFET
On-state resistance: 24mΩ
Drain current: 2.6A
Drain-source voltage: 20V
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
NTR4003NT1G NTR4003N.PDF
NTR4003NT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.56A; 0.69W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 0.56A
On-state resistance: 2Ω
Type of transistor: N-MOSFET
Power dissipation: 0.69W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.15nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3147 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
893+0.08 EUR
995+ 0.072 EUR
1286+ 0.056 EUR
1359+ 0.053 EUR
Mindestbestellmenge: 893
NTR4003NT3G ntr4003n-d.pdf
NTR4003NT3G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.4A; 0.83W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.4A
Power dissipation: 0.83W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
NTR4101PT1G ntr4101.pdf
NTR4101PT1G
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.7A; 0.21W; SOT23
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±8V
Gate charge: 7.5nC
Drain-source voltage: -20V
Drain current: -1.7A
On-state resistance: 0.21Ω
Type of transistor: P-MOSFET
Power dissipation: 0.21W
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 59 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
59+1.22 EUR
131+ 0.54 EUR
360+ 0.2 EUR
Mindestbestellmenge: 59
NTR4170NT1G ntr4170n-d.pdf
NTR4170NT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.7A; 0.48W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.7A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 105 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
105+0.69 EUR
267+ 0.27 EUR
1000+ 0.16 EUR
Mindestbestellmenge: 105
NTR4171PT1G NTR4171P.PDF
NTR4171PT1G
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±12V
Gate charge: 7.4nC
Drain-source voltage: -30V
Drain current: -1.5A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET
Power dissipation: 1.25W
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3027 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
161+0.44 EUR
200+ 0.36 EUR
302+ 0.24 EUR
319+ 0.22 EUR
Mindestbestellmenge: 161
NTR4501NT1G NxR4501N.PDF
NTR4501NT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.4A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3744 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
353+0.2 EUR
516+ 0.14 EUR
625+ 0.11 EUR
695+ 0.1 EUR
736+ 0.097 EUR
3000+ 0.096 EUR
Mindestbestellmenge: 353
NTR4502PT1G NTR4502P.PDF
NTR4502PT1G
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.56A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.56A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTR5103NT1G NTR5103N.pdf
NTR5103NT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.31A; 0.42W; SOT23
Drain-source voltage: 60V
Drain current: 0.31A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Power dissipation: 0.42W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 0.81nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: SMD
Case: SOT23
Anzahl je Verpackung: 1 Stücke
auf Bestellung 13190 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
250+0.29 EUR
363+ 0.2 EUR
777+ 0.092 EUR
1722+ 0.042 EUR
1822+ 0.039 EUR
Mindestbestellmenge: 250
NTR5105PT1G ntr5105p-d.pdf
NTR5105PT1G
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.141A; 0.347W; SOT23
Drain-source voltage: -60V
Drain current: -0.141A
On-state resistance: 5Ω
Type of transistor: P-MOSFET
Power dissipation: 0.347W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SOT23
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1285 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
425+0.17 EUR
695+ 0.1 EUR
790+ 0.091 EUR
890+ 0.081 EUR
940+ 0.076 EUR
Mindestbestellmenge: 425
NTR5198NLT1G ntr5198nl-d.pdf
NTR5198NLT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.6A; 0.6W; SOT23
Mounting: SMD
Power dissipation: 0.6W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT23
Drain-source voltage: 60V
Drain current: 1.6A
On-state resistance: 155mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3262 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
162+0.44 EUR
230+ 0.31 EUR
295+ 0.24 EUR
424+ 0.17 EUR
650+ 0.11 EUR
685+ 0.1 EUR
Mindestbestellmenge: 162
NTRV4101PT1G ntr4101p-d.pdf
Hersteller: ONSEMI
NTRV4101PT1G SMD P channel transistors
Produkt ist nicht verfügbar
NTS2101PT1G nts2101p-d.pdf
NTS2101PT1G
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -1.1A; 0.29W; SC70,SOT323
Drain-source voltage: -8V
Drain current: -1.1A
On-state resistance: 0.1Ω
Type of transistor: P-MOSFET
Power dissipation: 0.29W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: SC70; SOT323
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
NTS260SFT1G NTS260SF.PDF
NTS260SFT1G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2A; SOD123F; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SOD123F
Max. off-state voltage: 60V
Max. load current: 4A
Max. forward voltage: 0.65V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 25A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTS4001NT1G nts4001n-d.pdf
NTS4001NT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.2A; 0.33W; SC70,SOT323
Case: SC70; SOT323
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: 30V
Drain current: 0.2A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.33W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2279 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
425+0.17 EUR
585+ 0.12 EUR
660+ 0.11 EUR
760+ 0.094 EUR
810+ 0.089 EUR
Mindestbestellmenge: 425
NTS4101PT1G NTS4101P.PDF
NTS4101PT1G
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.62A; 0.329W; SC70,SOT323
Drain-source voltage: -20V
Drain current: -0.62A
On-state resistance: 0.16Ω
Type of transistor: P-MOSFET
Power dissipation: 0.329W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 6.4nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: SC70; SOT323
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3007 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
481+0.15 EUR
538+ 0.13 EUR
698+ 0.1 EUR
738+ 0.097 EUR
Mindestbestellmenge: 481
NTS4173PT1G nts4173p-d.pdf
NTS4173PT1G
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.8A; Idm: -5A; 290mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.8A
Pulsed drain current: -5A
Power dissipation: 0.29W
Case: SC70; SOT323
Gate-source voltage: ±12V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 10.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
NTS4409NT1G NTS4409N.PDF
NTS4409NT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.75A; 0.28W; SC70,SOT323
Drain-source voltage: 25V
Drain current: 0.75A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 0.28W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.2nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: SC70; SOT323
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2109 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
148+0.49 EUR
184+ 0.39 EUR
254+ 0.28 EUR
296+ 0.24 EUR
441+ 0.16 EUR
466+ 0.15 EUR
Mindestbestellmenge: 148
NTTFS5116PLTAG nttfs5116pl-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -14A; 20W; WDFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -14A
Power dissipation: 20W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
NTUD3169CZT5G ntud3169cz-d.pdf
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 0.16/-0.14A
Power dissipation: 0.125W
Case: SOT963
Gate-source voltage: ±8V
On-state resistance: 1.5/5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 8000 Stücke
Produkt ist nicht verfügbar
NTUD3170NZT5G ntud3170nz-d.pdf
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.16A; 0.125W; SOT963
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.16A
Power dissipation: 0.125W
Case: SOT963
Gate-source voltage: ±8V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 8000 Stücke
Produkt ist nicht verfügbar
NTZD3152PT1G NTZD3152P.PDF
NTZD3152PT1G
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.43A; 0.25W; SOT563
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.43A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±6V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2950 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
167+0.43 EUR
211+ 0.34 EUR
257+ 0.28 EUR
360+ 0.2 EUR
477+ 0.15 EUR
504+ 0.14 EUR
Mindestbestellmenge: 167
NTZD3154NT1G NTZD3154N.PDF
NTZD3154NT1G
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.54A; 0.25W; SOT563
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.54A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±7V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3373 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
139+0.51 EUR
203+ 0.35 EUR
311+ 0.23 EUR
374+ 0.19 EUR
543+ 0.13 EUR
574+ 0.12 EUR
Mindestbestellmenge: 139
NTZD3155CT1G NTZD3155C-DTE.PDF
NTZD3155CT1G
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 0.39/-0.31A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±6V
On-state resistance: 400/500mΩ
Mounting: SMD
Gate charge: 1.5/1.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5676 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
162+0.44 EUR
272+ 0.26 EUR
391+ 0.18 EUR
496+ 0.14 EUR
1000+ 0.13 EUR
Mindestbestellmenge: 162
NTZD3155CT2G ntzd3155c-d.pdf
NTZD3155CT2G
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 0.39/-0.31A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±6V
On-state resistance: 0.55/0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3469 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
167+0.43 EUR
211+ 0.34 EUR
290+ 0.25 EUR
538+ 0.13 EUR
582+ 0.12 EUR
Mindestbestellmenge: 167
NTZD5110NT1G ntzd5110n-d.pdf
NTZD5110NT1G
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.225A; 0.28W; SOT563F
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.225A
Power dissipation: 0.28W
Case: SOT563F
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
NTZS3151PT1G ntzs3151p-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.76A; 0.21W; SOT563F
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.76A
Power dissipation: 0.21W
Case: SOT563F
Gate-source voltage: ±8V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
NUD3124LT1G nud3124-d.pdf
NUD3124LT1G
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.2A; Ch: 1; N-Channel; SMD; SOT23
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 0.2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT23
On-state resistance: 0.8Ω
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NUD3160DMT1G nud3160-d.pdf
NUD3160DMT1G
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.2A; Ch: 2; N-Channel; SMD; SC74
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 0.2A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SC74
On-state resistance: 1.8Ω
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NUD3160LT1G nud3160-d.pdf
NUD3160LT1G
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.2A; Ch: 2; N-Channel; SMD; SOT23
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 0.2A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SOT23
On-state resistance: 1.8Ω
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NUD4001DR2G description NUD4001.PDF
NUD4001DR2G
Hersteller: ONSEMI
Category: LED drivers
Description: IC: driver; LED controller; SO8; 500mA; 28V; Ch: 1; PWM
Type of integrated circuit: driver
Kind of integrated circuit: LED controller
Case: SO8
Output current: 0.5A
Output voltage: 28V
Number of channels: 1
Integrated circuit features: PWM
Mounting: SMD
Operating temperature: -40...125°C
Anzahl je Verpackung: 1 Stücke
auf Bestellung 566 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
60+1.2 EUR
73+ 0.99 EUR
105+ 0.69 EUR
109+ 0.66 EUR
Mindestbestellmenge: 60
NUD4700SNT1G NUD4700.PDF
NUD4700SNT1G
Hersteller: ONSEMI
Category: LED drivers
Description: IC: driver; current shunt; POWERMITE; 1V; 1.56W; 1.3A
Type of integrated circuit: driver
Kind of integrated circuit: current shunt
Case: POWERMITE
Mounting: SMD
Operating temperature: -40...150°C
Operating voltage: 1V
Power dissipation: 1.56W
Operating current: 1.3A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
NUF2042XV6T1G NUF2042XV6T1G.PDF
NUF2042XV6T1G
Hersteller: ONSEMI
Category: Filters - integrated circuits
Description: Filter: digital; line terminator; lowpass,EMI; SOT563; Ch: 2
Type of filter: digital
Kind of filter: EMI; lowpass
Mounting: SMD
Case: SOT563
Number of channels: 2
Application: USB port ESD protection
Kind of integrated circuit: line terminator
Anzahl je Verpackung: 1 Stücke
auf Bestellung 108 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
108+0.66 EUR
132+ 0.54 EUR
500+ 0.33 EUR
2000+ 0.32 EUR
Mindestbestellmenge: 108
NUF4401MNT1G nuf4401mn-d.pdf
Hersteller: ONSEMI
Category: Filters - integrated circuits
Description: Filter: digital; EMI; DFN8; Ch: 4
Type of filter: digital
Kind of filter: EMI
Mounting: SMD
Case: DFN8
Number of channels: 4
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NUP1105LT1G nup1105l-d.pdf
Hersteller: ONSEMI
NUP1105LT1G Transil diodes - arrays
Produkt ist nicht verfügbar
NUP1301ML3T1G NUP1301ML3T1G.PDF
NUP1301ML3T1G
Hersteller: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; double series; SOT23; Features: ESD protection
Type of diode: TVS array
Semiconductor structure: double series
Mounting: SMD
Case: SOT23
Max. off-state voltage: 70V
Features of semiconductor devices: ESD protection
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
auf Bestellung 113 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
115+0.61 EUR
155+ 0.46 EUR
415+ 0.17 EUR
3000+ 0.1 EUR
Mindestbestellmenge: 115
NUP2105LT1G NUP2105L.PDF
NUP2105LT1G
Hersteller: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 26.2÷32V; 350W; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...32V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Features of semiconductor devices: ESD protection
Kind of package: reel; tape
Application: CAN
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4819 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
285+0.25 EUR
358+ 0.2 EUR
417+ 0.17 EUR
500+ 0.14 EUR
3000+ 0.13 EUR
Mindestbestellmenge: 285
NUP2201MR6T1G NUP2201MR6T1G-DTE.PDF
NUP2201MR6T1G
Hersteller: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 6V; 25A; 500W; unidirectional; TSOP6; Ch: 2
Mounting: SMD
Kind of package: reel; tape
Case: TSOP6
Peak pulse power dissipation: 0.5kW
Semiconductor structure: unidirectional
Max. forward impulse current: 25A
Breakdown voltage: 6V
Leakage current: 5µA
Number of channels: 2
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1088 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
125+0.57 EUR
159+ 0.45 EUR
219+ 0.33 EUR
232+ 0.31 EUR
3000+ 0.3 EUR
Mindestbestellmenge: 125
NUP2301MW6T1G NUP2301MW6T1G.PDF
NUP2301MW6T1G
Hersteller: ONSEMI
Category: Transil diodes - arrays
Description: Diode: diode arrays; SC88; Features: ESD protection; Ch: 2
Case: SC88
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 70V
Features of semiconductor devices: ESD protection
Number of channels: 2
Type of diode: diode arrays
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2818 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
191+0.38 EUR
220+ 0.33 EUR
265+ 0.27 EUR
281+ 0.26 EUR
3000+ 0.25 EUR
Mindestbestellmenge: 191
NUP4114HMR6T1G NUP4114.PDF
NUP4114HMR6T1G
Hersteller: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; TSOP6; Features: ESD protection; Ch: 4
Mounting: SMD
Kind of package: reel; tape
Case: TSOP6
Max. off-state voltage: 5.5V
Max. forward impulse current: 12A
Breakdown voltage: 6.5V
Leakage current: 1µA
Number of channels: 4
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NUP4114UCLW1T2G NUP4114.PDF
NUP4114UCLW1T2G
Hersteller: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; SC88; Features: ESD protection; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.5V
Max. forward impulse current: 12A
Mounting: SMD
Case: SC88
Max. off-state voltage: 5.5V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 991 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
206+0.35 EUR
334+ 0.21 EUR
371+ 0.19 EUR
463+ 0.15 EUR
Mindestbestellmenge: 206
NUP4114UCW1T2G NUP4114.PDF
NUP4114UCW1T2G
Hersteller: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; SC88; Features: ESD protection; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.5V
Max. forward impulse current: 12A
Mounting: SMD
Case: SC88
Max. off-state voltage: 5.5V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1777 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
82+0.87 EUR
188+ 0.38 EUR
313+ 0.23 EUR
350+ 0.2 EUR
455+ 0.16 EUR
481+ 0.15 EUR
Mindestbestellmenge: 82
NUP4301MR6T1G NUP4301MR6T1G.PDF
NUP4301MR6T1G
Hersteller: ONSEMI
Category: Transil diodes - arrays
Description: Diode: diode arrays; SC74; Features: ESD protection; Ch: 4
Mounting: SMD
Kind of package: reel; tape
Case: SC74
Max. off-state voltage: 70V
Number of channels: 4
Type of diode: diode arrays
Features of semiconductor devices: ESD protection
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2940 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
173+0.41 EUR
219+ 0.33 EUR
281+ 0.25 EUR
439+ 0.16 EUR
643+ 0.11 EUR
1000+ 0.1 EUR
Mindestbestellmenge: 173
NV24C04DTVLT3G NV24C04LV-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
NV24C04MUW3VLTBG NV24C04LV-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
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