NTR5103NT1G ON Semiconductor
auf Bestellung 45000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.053 EUR |
| 9000+ | 0.045 EUR |
| 45000+ | 0.039 EUR |
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Technische Details NTR5103NT1G ON Semiconductor
Description: MOSFET N-CH 60V 260MA SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 260mA (Ta), Rds On (Max) @ Id, Vgs: 2.5Ohm @ 240mA, 10V, Power Dissipation (Max): 300mW (Ta), Vgs(th) (Max) @ Id: 2.6V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.81 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V.
Weitere Produktangebote NTR5103NT1G nach Preis ab 0.039 EUR bis 1.56 EUR
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NTR5103NT1G | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 60V 0.26A 3-Pin SOT-23 T/R |
auf Bestellung 45000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTR5103NT1G | Hersteller : onsemi |
Description: MOSFET N-CH 60V 260MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 240mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.81 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V |
auf Bestellung 90000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTR5103NT1G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.31A; 0.42W; SOT23 Drain-source voltage: 60V Drain current: 0.31A On-state resistance: 3Ω Type of transistor: N-MOSFET Power dissipation: 0.42W Polarisation: unipolar Kind of package: reel; tape Gate charge: 0.81nC Kind of channel: enhanced Gate-source voltage: ±30V Mounting: SMD Case: SOT23 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 13190 Stücke: Lieferzeit 7-14 Tag (e) |
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NTR5103NT1G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.31A; 0.42W; SOT23 Drain-source voltage: 60V Drain current: 0.31A On-state resistance: 3Ω Type of transistor: N-MOSFET Power dissipation: 0.42W Polarisation: unipolar Kind of package: reel; tape Gate charge: 0.81nC Kind of channel: enhanced Gate-source voltage: ±30V Mounting: SMD Case: SOT23 |
auf Bestellung 13190 Stücke: Lieferzeit 14-21 Tag (e) |
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NTR5103NT1G | Hersteller : onsemi |
MOSFET NFET SOT23 60V 310MA 2.5 |
auf Bestellung 123661 Stücke: Lieferzeit 10-14 Tag (e) |
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NTR5103NT1G | Hersteller : onsemi |
Description: MOSFET N-CH 60V 260MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 240mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.81 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V |
auf Bestellung 91202 Stücke: Lieferzeit 10-14 Tag (e) |
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NTR5103NT1G | Hersteller : ONSEMI |
Description: ONSEMI - NTR5103NT1G - Leistungs-MOSFET, n-Kanal, 60 V, 260 mA, 1 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 260mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.6V euEccn: NLR Verlustleistung: 300mW Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1ohm |
auf Bestellung 35738 Stücke: Lieferzeit 14-21 Tag (e) |
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NTR5103NT1G | Hersteller : ONSEMI |
Description: ONSEMI - NTR5103NT1G - Leistungs-MOSFET, n-Kanal, 60 V, 260 mA, 1 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 260mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.6V euEccn: NLR Verlustleistung: 300mW Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1ohm |
auf Bestellung 35738 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTR5103NT1G | Hersteller : ONS |
Транзистор: N-MOSFET; полевой; 60В; 0,31А; 0,42Вт; SOT23 |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
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NTR5103NT1G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 0.26A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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NTR5103NT1G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 0.26A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |