| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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NSR20F30NXT5G | ONSEMI |
 Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMD; 30V; 2A; DSN0603-2; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 2A Max. load current: 4A Semiconductor structure: single diode Max. forward voltage: 0.48V Case: DSN0603-2 Kind of package: reel; tape Max. forward impulse current: 28A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1161 Stücke: Lieferzeit 7-14 Tag (e) |
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NSS12100XV6T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 12V; 1A; 0.65W; SOT563 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 12V Collector current: 1A Power dissipation: 0.65W Case: SOT563 Mounting: SMD Kind of package: reel; tape Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 221 Stücke: Lieferzeit 7-14 Tag (e) |
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NSS30101LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 30V; 1A; 0.71W; SOT23 Case: SOT23 Mounting: SMD Application: automotive industry Frequency: 100MHz Kind of package: reel; tape Power dissipation: 0.71W Collector-emitter voltage: 30V Collector current: 1A Current gain: 900 Type of transistor: NPN Polarisation: bipolar Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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NSS40201LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 2A; 0.46W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 0.46W Application: automotive industry Frequency: 150MHz Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 2A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1340 Stücke: Lieferzeit 7-14 Tag (e) |
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NSS60201LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 2A; 0.46W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 2A Power dissipation: 0.46W Case: SOT23 Current gain: 100...350 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NST30010MXV6T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.429W; SOT563 Frequency: 100MHz Case: SOT563 Mounting: SMD Kind of package: reel; tape Application: automotive industry Power dissipation: 0.429W Polarisation: bipolar Collector-emitter voltage: 30V Current gain: 420...800 Collector current: 0.1A Type of transistor: PNP x2 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NST45010MW6T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.38W Case: SC70-6; SC88; SOT363 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NSV45035JZT1G | ONSEMI |
NSV45035JZT1G-ONS LED drivers |
Produkt ist nicht verfügbar |
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| NSV45060JDT4G | ONSEMI |
Category: LED drivers Description: IC: driver; current regulator,LED driver; DPAK; 45V; 2.7W Type of integrated circuit: driver Kind of integrated circuit: current regulator; LED driver Case: DPAK Mounting: SMD Operating temperature: -55...175°C Operating voltage: 45V Power dissipation: 2.7W Operating current: 60...100mA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NSVBAS21HT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD323; Ufmax: 1.25V; 200mW Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Max. load current: 0.5A Reverse recovery time: 50ns Semiconductor structure: single diode Capacitance: 5pF Case: SOD323 Max. forward voltage: 1.25V Max. forward impulse current: 2.5A Power dissipation: 0.2W Kind of package: reel; tape Application: automotive industry Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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NSVBC817-16LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23 Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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| NSVF4017SG4T1G | ONSEMI |
NSVF4017SG4T1G-ONS NPN SMD transistors |
Produkt ist nicht verfügbar |
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NSVMMUN2212LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23 Current gain: 60...100 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Application: automotive industry Base-emitter resistor: 22kΩ Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2565 Stücke: Lieferzeit 7-14 Tag (e) |
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NSVR0170HT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 70V; 70mA; SOD323; reel,tape Kind of package: reel; tape Application: automotive industry Mounting: SMD Type of diode: Schottky rectifying Case: SOD323 Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: single diode Max. forward impulse current: 0.1A Anzahl je Verpackung: 25 Stücke |
auf Bestellung 2150 Stücke: Lieferzeit 7-14 Tag (e) |
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NTA4001NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.238A; 0.3W; SC75 Case: SC75 Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Mounting: SMD Drain-source voltage: 20V Drain current: 0.238A On-state resistance: 3.5Ω Type of transistor: N-MOSFET Power dissipation: 0.3W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±10V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NTA4151PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.76A; 0.301W; SC75 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.76A Power dissipation: 0.301W Case: SC75 Gate-source voltage: ±6V On-state resistance: 0.36Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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NTA4153NT1G | ONSEMI |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 0.915A; 0.3W; SC75 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.915A Power dissipation: 0.3W Case: SC75 Gate-source voltage: ±6V On-state resistance: 0.95Ω Mounting: SMD Gate charge: 1.82nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 10 Stücke |
auf Bestellung 4350 Stücke: Lieferzeit 7-14 Tag (e) |
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NTA7002NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 0.154A; 0.3W; SC75 Mounting: SMD Case: SC75 On-state resistance: 7Ω Type of transistor: N-MOSFET Power dissipation: 0.3W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Drain-source voltage: 30V Gate-source voltage: ±10V Drain current: 0.154A Anzahl je Verpackung: 10 Stücke |
auf Bestellung 1538 Stücke: Lieferzeit 7-14 Tag (e) |
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| NTB25P06T4G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -27.5A; 120W; D2PAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -27.5A Power dissipation: 120W Case: D2PAK Gate-source voltage: ±15V On-state resistance: 75mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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| NTD14N03RT4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 2.5A; Idm: 28A; 20.8W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 2.5A Pulsed drain current: 28A Power dissipation: 20.8W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.117Ω Mounting: SMD Gate charge: 1.8nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NTD18N06LT4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 55W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 10A Power dissipation: 55W Case: DPAK Gate-source voltage: ±15V On-state resistance: 65mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| NTD20N03L27T4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 74W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 16A Power dissipation: 74W Case: DPAK Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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NTD20N06LT4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 60W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 20A Power dissipation: 60W Case: DPAK Gate-source voltage: ±15V On-state resistance: 39mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 93 Stücke: Lieferzeit 7-14 Tag (e) |
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| NTD20N06T4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 10A Pulsed drain current: 60A Power dissipation: 60W Case: DPAK Gate-source voltage: ±20V On-state resistance: 37.5mΩ Mounting: SMD Gate charge: 21.2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NTD20P06LT4G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -15.5A; 65W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -15.5A Power dissipation: 65W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1742 Stücke: Lieferzeit 7-14 Tag (e) |
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NTD24N06LT4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 24A; 62.5W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 24A Power dissipation: 62.5W Case: DPAK Gate-source voltage: ±15V On-state resistance: 36mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NTD25P03LT4G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -25A; 75W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -25A Power dissipation: 75W Case: DPAK Gate-source voltage: ±15V On-state resistance: 90mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3409 Stücke: Lieferzeit 7-14 Tag (e) |
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NTD3055L104T4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 45A; 48W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Pulsed drain current: 45A Power dissipation: 48W Case: DPAK Gate-source voltage: ±15V On-state resistance: 0.104Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2130 Stücke: Lieferzeit 7-14 Tag (e) |
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| NTD3055L170T4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 28.5W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3A Power dissipation: 28.5W Case: DPAK Gate-source voltage: ±15V On-state resistance: 0.17Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| NTD360N65S3H | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 28A; 83W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 6A Pulsed drain current: 28A Power dissipation: 83W Case: DPAK Gate-source voltage: ±30V On-state resistance: 296mΩ Mounting: SMD Gate charge: 17.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NTD360N80S3Z | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8.2A; Idm: 32.5A; 96W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 8.2A Pulsed drain current: 32.5A Power dissipation: 96W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 25.3nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NTD4302T4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 43A; 75W; DPAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 43A Power dissipation: 75W Case: DPAK Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| NTD4804NT4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 124A; Idm: 230A; 107W; DPAK Mounting: SMD Power dissipation: 107W Polarisation: unipolar Kind of package: reel; tape Gate charge: 30nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 230A Case: DPAK Drain-source voltage: 30V Drain current: 124A On-state resistance: 4.7mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NTD4805NT4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 73A; Idm: 175A; 79W; DPAK Mounting: SMD Power dissipation: 79W Polarisation: unipolar Kind of package: reel; tape Gate charge: 20.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 175A Case: DPAK Drain-source voltage: 30V Drain current: 73A On-state resistance: 6mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NTD4808N-1G | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 126A; 54.6W; IPAK Mounting: THT Power dissipation: 54.6W Polarisation: unipolar Kind of package: tube Gate charge: 11.3nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 126A Case: IPAK Drain-source voltage: 30V Drain current: 49A On-state resistance: 10.3mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NTD4858NT4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 56A; Idm: 146A; 54.5W; DPAK Case: DPAK Drain-source voltage: 25V Drain current: 56A On-state resistance: 7.3mΩ Type of transistor: N-MOSFET Power dissipation: 54.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 12.8nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 146A Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NTD4860NT4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 50A; Idm: 130A; 50W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 50A Pulsed drain current: 130A Power dissipation: 50W Case: DPAK Gate-source voltage: ±20V On-state resistance: 8.9mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NTD5802NT4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 12.7A; Idm: 300A; 2.5W; DPAK Kind of package: reel; tape Drain-source voltage: 40V Drain current: 12.7A On-state resistance: 6.5mΩ Type of transistor: N-MOSFET Power dissipation: 2.5W Polarisation: unipolar Gate charge: 75nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 300A Mounting: SMD Case: DPAK Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NTD5862NT4G | ONSEMI |
NTD5862NT4G SMD N channel transistors |
Produkt ist nicht verfügbar |
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| NTD5C434NT4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 23A; Idm: 900A; 2.4W; DPAK Mounting: SMD Pulsed drain current: 900A Power dissipation: 2.4W Gate charge: 80.6nC Polarisation: unipolar Drain current: 23A Kind of channel: enhanced Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: DPAK On-state resistance: 1.7mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NTD5C446NT4G | ONSEMI |
NTD5C446NT4G SMD N channel transistors |
Produkt ist nicht verfügbar |
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| NTD5C648NLT4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 16A; Idm: 550A; 2.2W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 16A Pulsed drain current: 550A Power dissipation: 2.2W Case: DPAK Gate-source voltage: ±20V On-state resistance: 4.6mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NTD5C668NLT4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 250A; 2W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 10A Pulsed drain current: 250A Power dissipation: 2W Case: DPAK Gate-source voltage: ±20V On-state resistance: 10.2mΩ Mounting: SMD Gate charge: 18.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NTD5C688NLT4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 5.3A; Idm: 77A; 1.7W; DPAK Mounting: SMD Case: DPAK Kind of package: reel; tape On-state resistance: 32mΩ Type of transistor: N-MOSFET Power dissipation: 1.7W Polarisation: unipolar Gate charge: 0.9nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 77A Drain-source voltage: 60V Drain current: 5.3A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NTD600N80S3Z | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 21A; 60W; DPAK Case: DPAK Mounting: SMD Kind of package: reel; tape Power dissipation: 60W On-state resistance: 0.55Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 15.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 21A Drain-source voltage: 800V Drain current: 5A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NTD6414ANT4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 117A; 100W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 22A Pulsed drain current: 117A Power dissipation: 100W Case: DPAK Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NTD6415ANLT4G | ONSEMI |
NTD6415ANLT4G SMD N channel transistors |
Produkt ist nicht verfügbar |
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| NTD6416ANLT4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 71W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 13A Power dissipation: 71W Case: DPAK Gate-source voltage: ±20V On-state resistance: 74mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| NTD6416ANT4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 71W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 11A Power dissipation: 71W Case: DPAK Gate-source voltage: ±20V On-state resistance: 81mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| NTDS015N15MCT4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 11A; Idm: 246A; 3.8W; DPAK Mounting: SMD Case: DPAK Power dissipation: 3.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 27nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 246A Drain-source voltage: 150V Drain current: 11A On-state resistance: 12.6mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NTDV20N06T4G-VF01 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 10A Pulsed drain current: 60A Power dissipation: 60W Case: DPAK Gate-source voltage: ±20V On-state resistance: 37.5mΩ Mounting: SMD Gate charge: 21.2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NTDV20P06LT4G-VF01 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; 60V; 15.5A; Idm: 50A; 65W; DPAK Type of transistor: P-MOSFET Power dissipation: 65W Polarisation: unipolar Kind of package: reel; tape Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 50A Mounting: SMD Case: DPAK Drain-source voltage: 60V Drain current: 15.5A On-state resistance: 143mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NTE4151PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.76A; 313mW; SC89 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.76A Power dissipation: 313mW Case: SC89 Gate-source voltage: ±6V On-state resistance: 1Ω Mounting: SMD Gate charge: 2.1nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NTE4153NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.66A; 0.3W; SC89 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.66A Power dissipation: 0.3W Case: SC89 Gate-source voltage: ±6V On-state resistance: 0.23Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
auf Bestellung 1015 Stücke: Lieferzeit 7-14 Tag (e) |
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NTF2955T1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -2A; 2.3W; SOT223 Mounting: SMD Drain-source voltage: -60V Drain current: -2A On-state resistance: 0.185Ω Type of transistor: P-MOSFET Power dissipation: 2.3W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Case: SOT223 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NTF3055-100T1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 2.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3A Power dissipation: 2.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 10.6nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NTF3055L108T1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; Idm: 9A; 1.3W; SOT223 Mounting: SMD Case: SOT223 Kind of package: reel; tape Power dissipation: 1.3W Drain-source voltage: 60V Drain current: 1.4A On-state resistance: 0.12Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±15V Pulsed drain current: 9A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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|
NTF5P03T3G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -4.1A; 3.13W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.1A Power dissipation: 3.13W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
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| NTGD1100LT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 8V; 2.4A; Idm: 10A; 430mW; TSOP6 Power dissipation: 0.43W Case: TSOP6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 8V Drain current: 2.4A On-state resistance: 40mΩ Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 10A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NTGD3148NT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.2A; 0.9W; TSOP6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.2A Power dissipation: 0.9W Case: TSOP6 Gate-source voltage: ±12V On-state resistance: 70mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
| NSR20F30NXT5G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 2A; DSN0603-2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Max. load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.48V
Case: DSN0603-2
Kind of package: reel; tape
Max. forward impulse current: 28A
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 2A; DSN0603-2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Max. load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.48V
Case: DSN0603-2
Kind of package: reel; tape
Max. forward impulse current: 28A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1161 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 157+ | 0.46 EUR |
| 175+ | 0.41 EUR |
| 213+ | 0.34 EUR |
| 226+ | 0.32 EUR |
| 5000+ | 0.31 EUR |
| NSS12100XV6T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 1A; 0.65W; SOT563
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 1A
Power dissipation: 0.65W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 1A; 0.65W; SOT563
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 1A
Power dissipation: 0.65W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 221 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 142+ | 0.5 EUR |
| 221+ | 0.33 EUR |
| NSS30101LT1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 0.71W; SOT23
Case: SOT23
Mounting: SMD
Application: automotive industry
Frequency: 100MHz
Kind of package: reel; tape
Power dissipation: 0.71W
Collector-emitter voltage: 30V
Collector current: 1A
Current gain: 900
Type of transistor: NPN
Polarisation: bipolar
Anzahl je Verpackung: 5 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 0.71W; SOT23
Case: SOT23
Mounting: SMD
Application: automotive industry
Frequency: 100MHz
Kind of package: reel; tape
Power dissipation: 0.71W
Collector-emitter voltage: 30V
Collector current: 1A
Current gain: 900
Type of transistor: NPN
Polarisation: bipolar
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| NSS40201LT1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 2A; 0.46W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.46W
Application: automotive industry
Frequency: 150MHz
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 2A
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 2A; 0.46W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.46W
Application: automotive industry
Frequency: 150MHz
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 2A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1340 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 148+ | 0.49 EUR |
| 232+ | 0.31 EUR |
| 382+ | 0.19 EUR |
| 404+ | 0.18 EUR |
| 500+ | 0.17 EUR |
| NSS60201LT1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 2A; 0.46W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 0.46W
Case: SOT23
Current gain: 100...350
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 2A; 0.46W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 0.46W
Case: SOT23
Current gain: 100...350
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| NST30010MXV6T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.429W; SOT563
Frequency: 100MHz
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 0.429W
Polarisation: bipolar
Collector-emitter voltage: 30V
Current gain: 420...800
Collector current: 0.1A
Type of transistor: PNP x2
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.429W; SOT563
Frequency: 100MHz
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 0.429W
Polarisation: bipolar
Collector-emitter voltage: 30V
Current gain: 420...800
Collector current: 0.1A
Type of transistor: PNP x2
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| NST45010MW6T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| NSV45060JDT4G |
|
Hersteller: ONSEMI
Category: LED drivers
Description: IC: driver; current regulator,LED driver; DPAK; 45V; 2.7W
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: DPAK
Mounting: SMD
Operating temperature: -55...175°C
Operating voltage: 45V
Power dissipation: 2.7W
Operating current: 60...100mA
Anzahl je Verpackung: 1 Stücke
Category: LED drivers
Description: IC: driver; current regulator,LED driver; DPAK; 45V; 2.7W
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: DPAK
Mounting: SMD
Operating temperature: -55...175°C
Operating voltage: 45V
Power dissipation: 2.7W
Operating current: 60...100mA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| NSVBAS21HT1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD323; Ufmax: 1.25V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Max. load current: 0.5A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Anzahl je Verpackung: 5 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD323; Ufmax: 1.25V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Max. load current: 0.5A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| NSVBC817-16LT1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Anzahl je Verpackung: 5 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| NSVMMUN2212LT1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23
Current gain: 60...100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 22kΩ
Anzahl je Verpackung: 5 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23
Current gain: 60...100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 22kΩ
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2565 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 380+ | 0.19 EUR |
| 895+ | 0.08 EUR |
| 995+ | 0.072 EUR |
| 1275+ | 0.056 EUR |
| 1345+ | 0.053 EUR |
| NSVR0170HT1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 70V; 70mA; SOD323; reel,tape
Kind of package: reel; tape
Application: automotive industry
Mounting: SMD
Type of diode: Schottky rectifying
Case: SOD323
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward impulse current: 0.1A
Anzahl je Verpackung: 25 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 70V; 70mA; SOD323; reel,tape
Kind of package: reel; tape
Application: automotive industry
Mounting: SMD
Type of diode: Schottky rectifying
Case: SOD323
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward impulse current: 0.1A
Anzahl je Verpackung: 25 Stücke
auf Bestellung 2150 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1275+ | 0.057 EUR |
| 1400+ | 0.051 EUR |
| 1850+ | 0.039 EUR |
| 1950+ | 0.037 EUR |
| NTA4001NT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.238A; 0.3W; SC75
Case: SC75
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Mounting: SMD
Drain-source voltage: 20V
Drain current: 0.238A
On-state resistance: 3.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.3W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±10V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.238A; 0.3W; SC75
Case: SC75
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Mounting: SMD
Drain-source voltage: 20V
Drain current: 0.238A
On-state resistance: 3.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.3W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±10V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| NTA4151PT1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.76A; 0.301W; SC75
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.76A
Power dissipation: 0.301W
Case: SC75
Gate-source voltage: ±6V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.76A; 0.301W; SC75
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.76A
Power dissipation: 0.301W
Case: SC75
Gate-source voltage: ±6V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| NTA4153NT1G | |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.915A; 0.3W; SC75
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.915A
Power dissipation: 0.3W
Case: SC75
Gate-source voltage: ±6V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 1.82nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 10 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.915A; 0.3W; SC75
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.915A
Power dissipation: 0.3W
Case: SC75
Gate-source voltage: ±6V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 1.82nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 10 Stücke
auf Bestellung 4350 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 560+ | 0.13 EUR |
| 620+ | 0.12 EUR |
| 770+ | 0.093 EUR |
| 810+ | 0.089 EUR |
| 3000+ | 0.086 EUR |
| NTA7002NT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.154A; 0.3W; SC75
Mounting: SMD
Case: SC75
On-state resistance: 7Ω
Type of transistor: N-MOSFET
Power dissipation: 0.3W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Drain-source voltage: 30V
Gate-source voltage: ±10V
Drain current: 0.154A
Anzahl je Verpackung: 10 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.154A; 0.3W; SC75
Mounting: SMD
Case: SC75
On-state resistance: 7Ω
Type of transistor: N-MOSFET
Power dissipation: 0.3W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Drain-source voltage: 30V
Gate-source voltage: ±10V
Drain current: 0.154A
Anzahl je Verpackung: 10 Stücke
auf Bestellung 1538 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 590+ | 0.12 EUR |
| 1000+ | 0.072 EUR |
| 1130+ | 0.063 EUR |
| 1270+ | 0.057 EUR |
| 1340+ | 0.054 EUR |
| 3000+ | 0.053 EUR |
| NTB25P06T4G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -27.5A; 120W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -27.5A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±15V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -27.5A; 120W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -27.5A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±15V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
| NTD14N03RT4G | |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 2.5A; Idm: 28A; 20.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 2.5A
Pulsed drain current: 28A
Power dissipation: 20.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.117Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 2.5A; Idm: 28A; 20.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 2.5A
Pulsed drain current: 28A
Power dissipation: 20.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.117Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| NTD18N06LT4G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 55W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 55W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| NTD20N03L27T4G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 74W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Power dissipation: 74W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 74W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Power dissipation: 74W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| NTD20N06LT4G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 93 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 56+ | 1.29 EUR |
| 68+ | 1.06 EUR |
| 85+ | 0.84 EUR |
| 90+ | 0.8 EUR |
| 500+ | 0.78 EUR |
| NTD20N06T4G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| NTD20P06LT4G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15.5A; 65W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -15.5A
Power dissipation: 65W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15.5A; 65W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -15.5A
Power dissipation: 65W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1742 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 61+ | 1.17 EUR |
| 71+ | 1.02 EUR |
| 111+ | 0.65 EUR |
| 117+ | 0.61 EUR |
| 1000+ | 0.59 EUR |
| NTD24N06LT4G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; 62.5W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Power dissipation: 62.5W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; 62.5W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Power dissipation: 62.5W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| NTD25P03LT4G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -25A; 75W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -25A
Power dissipation: 75W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -25A; 75W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -25A
Power dissipation: 75W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3409 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 39+ | 1.86 EUR |
| 57+ | 1.27 EUR |
| 76+ | 0.94 EUR |
| 81+ | 0.89 EUR |
| NTD3055L104T4G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 45A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 45A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 0.104Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 45A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 45A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 0.104Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2130 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 69+ | 1.04 EUR |
| 100+ | 0.72 EUR |
| 106+ | 0.68 EUR |
| NTD3055L170T4G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 28.5W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Power dissipation: 28.5W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 0.17Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 28.5W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Power dissipation: 28.5W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 0.17Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| NTD360N65S3H |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 28A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Pulsed drain current: 28A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 296mΩ
Mounting: SMD
Gate charge: 17.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 28A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Pulsed drain current: 28A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 296mΩ
Mounting: SMD
Gate charge: 17.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| NTD360N80S3Z |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.2A; Idm: 32.5A; 96W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.2A
Pulsed drain current: 32.5A
Power dissipation: 96W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 25.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.2A; Idm: 32.5A; 96W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.2A
Pulsed drain current: 32.5A
Power dissipation: 96W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 25.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| NTD4302T4G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 43A; 75W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 43A
Power dissipation: 75W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 43A; 75W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 43A
Power dissipation: 75W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| NTD4804NT4G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 124A; Idm: 230A; 107W; DPAK
Mounting: SMD
Power dissipation: 107W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 30nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 230A
Case: DPAK
Drain-source voltage: 30V
Drain current: 124A
On-state resistance: 4.7mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 124A; Idm: 230A; 107W; DPAK
Mounting: SMD
Power dissipation: 107W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 30nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 230A
Case: DPAK
Drain-source voltage: 30V
Drain current: 124A
On-state resistance: 4.7mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| NTD4805NT4G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 73A; Idm: 175A; 79W; DPAK
Mounting: SMD
Power dissipation: 79W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 175A
Case: DPAK
Drain-source voltage: 30V
Drain current: 73A
On-state resistance: 6mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 73A; Idm: 175A; 79W; DPAK
Mounting: SMD
Power dissipation: 79W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 175A
Case: DPAK
Drain-source voltage: 30V
Drain current: 73A
On-state resistance: 6mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| NTD4808N-1G |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 126A; 54.6W; IPAK
Mounting: THT
Power dissipation: 54.6W
Polarisation: unipolar
Kind of package: tube
Gate charge: 11.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 126A
Case: IPAK
Drain-source voltage: 30V
Drain current: 49A
On-state resistance: 10.3mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 126A; 54.6W; IPAK
Mounting: THT
Power dissipation: 54.6W
Polarisation: unipolar
Kind of package: tube
Gate charge: 11.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 126A
Case: IPAK
Drain-source voltage: 30V
Drain current: 49A
On-state resistance: 10.3mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| NTD4858NT4G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 56A; Idm: 146A; 54.5W; DPAK
Case: DPAK
Drain-source voltage: 25V
Drain current: 56A
On-state resistance: 7.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 54.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 12.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 146A
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 56A; Idm: 146A; 54.5W; DPAK
Case: DPAK
Drain-source voltage: 25V
Drain current: 56A
On-state resistance: 7.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 54.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 12.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 146A
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| NTD4860NT4G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 50A; Idm: 130A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 50A
Pulsed drain current: 130A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 8.9mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 50A; Idm: 130A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 50A
Pulsed drain current: 130A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 8.9mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| NTD5802NT4G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12.7A; Idm: 300A; 2.5W; DPAK
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 12.7A
On-state resistance: 6.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 75nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 300A
Mounting: SMD
Case: DPAK
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12.7A; Idm: 300A; 2.5W; DPAK
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 12.7A
On-state resistance: 6.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Gate charge: 75nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 300A
Mounting: SMD
Case: DPAK
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| NTD5C434NT4G |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 23A; Idm: 900A; 2.4W; DPAK
Mounting: SMD
Pulsed drain current: 900A
Power dissipation: 2.4W
Gate charge: 80.6nC
Polarisation: unipolar
Drain current: 23A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 1.7mΩ
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 23A; Idm: 900A; 2.4W; DPAK
Mounting: SMD
Pulsed drain current: 900A
Power dissipation: 2.4W
Gate charge: 80.6nC
Polarisation: unipolar
Drain current: 23A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 1.7mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| NTD5C648NLT4G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; Idm: 550A; 2.2W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 16A
Pulsed drain current: 550A
Power dissipation: 2.2W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; Idm: 550A; 2.2W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 16A
Pulsed drain current: 550A
Power dissipation: 2.2W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| NTD5C668NLT4G |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 250A; 2W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 250A
Power dissipation: 2W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 10.2mΩ
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 250A; 2W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 250A
Power dissipation: 2W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 10.2mΩ
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| NTD5C688NLT4G |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5.3A; Idm: 77A; 1.7W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.7W
Polarisation: unipolar
Gate charge: 0.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 77A
Drain-source voltage: 60V
Drain current: 5.3A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5.3A; Idm: 77A; 1.7W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.7W
Polarisation: unipolar
Gate charge: 0.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 77A
Drain-source voltage: 60V
Drain current: 5.3A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| NTD600N80S3Z |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 21A; 60W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 60W
On-state resistance: 0.55Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 15.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 21A
Drain-source voltage: 800V
Drain current: 5A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 21A; 60W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 60W
On-state resistance: 0.55Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 15.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 21A
Drain-source voltage: 800V
Drain current: 5A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| NTD6414ANT4G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 117A; 100W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 117A
Power dissipation: 100W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 117A; 100W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 117A
Power dissipation: 100W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| NTD6416ANLT4G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 71W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Power dissipation: 71W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 74mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 71W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Power dissipation: 71W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 74mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| NTD6416ANT4G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 71W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 71W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 81mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 71W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 71W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 81mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| NTDS015N15MCT4G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 11A; Idm: 246A; 3.8W; DPAK
Mounting: SMD
Case: DPAK
Power dissipation: 3.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 27nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 246A
Drain-source voltage: 150V
Drain current: 11A
On-state resistance: 12.6mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 11A; Idm: 246A; 3.8W; DPAK
Mounting: SMD
Case: DPAK
Power dissipation: 3.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 27nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 246A
Drain-source voltage: 150V
Drain current: 11A
On-state resistance: 12.6mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| NTDV20N06T4G-VF01 |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| NTDV20P06LT4G-VF01 |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 60V; 15.5A; Idm: 50A; 65W; DPAK
Type of transistor: P-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Case: DPAK
Drain-source voltage: 60V
Drain current: 15.5A
On-state resistance: 143mΩ
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 60V; 15.5A; Idm: 50A; 65W; DPAK
Type of transistor: P-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Case: DPAK
Drain-source voltage: 60V
Drain current: 15.5A
On-state resistance: 143mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| NTE4151PT1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.76A; 313mW; SC89
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.76A
Power dissipation: 313mW
Case: SC89
Gate-source voltage: ±6V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.76A; 313mW; SC89
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.76A
Power dissipation: 313mW
Case: SC89
Gate-source voltage: ±6V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| NTE4153NT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.66A; 0.3W; SC89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.66A
Power dissipation: 0.3W
Case: SC89
Gate-source voltage: ±6V
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.66A; 0.3W; SC89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.66A
Power dissipation: 0.3W
Case: SC89
Gate-source voltage: ±6V
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1015 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 315+ | 0.23 EUR |
| 500+ | 0.14 EUR |
| 565+ | 0.13 EUR |
| 630+ | 0.11 EUR |
| NTF2955T1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2A; 2.3W; SOT223
Mounting: SMD
Drain-source voltage: -60V
Drain current: -2A
On-state resistance: 0.185Ω
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT223
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2A; 2.3W; SOT223
Mounting: SMD
Drain-source voltage: -60V
Drain current: -2A
On-state resistance: 0.185Ω
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT223
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| NTF3055-100T1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 10.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 10.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| NTF3055L108T1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; Idm: 9A; 1.3W; SOT223
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Power dissipation: 1.3W
Drain-source voltage: 60V
Drain current: 1.4A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±15V
Pulsed drain current: 9A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; Idm: 9A; 1.3W; SOT223
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Power dissipation: 1.3W
Drain-source voltage: 60V
Drain current: 1.4A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±15V
Pulsed drain current: 9A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| NTF5P03T3G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.1A; 3.13W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.1A
Power dissipation: 3.13W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.1A; 3.13W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.1A
Power dissipation: 3.13W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
| NTGD1100LT1G |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 8V; 2.4A; Idm: 10A; 430mW; TSOP6
Power dissipation: 0.43W
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 8V
Drain current: 2.4A
On-state resistance: 40mΩ
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 10A
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 8V; 2.4A; Idm: 10A; 430mW; TSOP6
Power dissipation: 0.43W
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 8V
Drain current: 2.4A
On-state resistance: 40mΩ
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 10A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| NTGD3148NT1G |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.2A; 0.9W; TSOP6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Power dissipation: 0.9W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.2A; 0.9W; TSOP6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Power dissipation: 0.9W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar