NTD6416ANLT4G onsemi
Hersteller: onsemiDescription: MOSFET N-CH 100V 19A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 19A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.87 EUR |
| 5000+ | 0.83 EUR |
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Technische Details NTD6416ANLT4G onsemi
Description: MOSFET N-CH 100V 19A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), Rds On (Max) @ Id, Vgs: 74mOhm @ 19A, 10V, Power Dissipation (Max): 71W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V.
Weitere Produktangebote NTD6416ANLT4G nach Preis ab 0.83 EUR bis 2.09 EUR
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NTD6416ANLT4G | Hersteller : onsemi |
MOSFET NFET DPAK 100V 19A 106MO |
auf Bestellung 2306 Stücke: Lieferzeit 10-14 Tag (e) |
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NTD6416ANLT4G | Hersteller : onsemi |
Description: MOSFET N-CH 100V 19A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 74mOhm @ 19A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V |
auf Bestellung 6752 Stücke: Lieferzeit 10-14 Tag (e) |
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NTD6416ANLT4G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 19A 3-Pin(2+Tab) DPAK T/R |
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NTD6416ANLT4G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 19A 3-Pin(2+Tab) DPAK T/R |
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NTD6416ANLT4G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 19A 3-Pin(2+Tab) DPAK T/R |
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| NTD6416ANLT4G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 71W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 13A Power dissipation: 71W Case: DPAK Gate-source voltage: ±20V On-state resistance: 74mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| NTD6416ANLT4G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 71W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 13A Power dissipation: 71W Case: DPAK Gate-source voltage: ±20V On-state resistance: 74mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |