auf Bestellung 8794 Stücke:
Lieferzeit 304-308 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 3.71 EUR |
| 10+ | 3.1 EUR |
| 100+ | 2.46 EUR |
| 800+ | 1.76 EUR |
Produktrezensionen
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Technische Details NTB25P06T4G onsemi
Description: MOSFET P-CH 60V 27.5A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 27.5A (Ta), Rds On (Max) @ Id, Vgs: 82mOhm @ 25A, 10V, Power Dissipation (Max): 120W (Tj), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V.
Weitere Produktangebote NTB25P06T4G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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NTB25P06T4G | Hersteller : ON Semiconductor |
 Trans MOSFET P-CH 60V 27.5A 3-Pin(2+Tab) D2PAK T/R |
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NTB25P06T4G | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 60V 27.5A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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NTB25P06T4G | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 60V 27.5A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| NTB25P06T4G | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -27.5A; 120W; D2PAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -27.5A Power dissipation: 120W Case: D2PAK Gate-source voltage: ±15V On-state resistance: 75mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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NTB25P06T4G | Hersteller : onsemi |
Description: MOSFET P-CH 60V 27.5A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 27.5A (Ta) Rds On (Max) @ Id, Vgs: 82mOhm @ 25A, 10V Power Dissipation (Max): 120W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V |
Produkt ist nicht verfügbar |
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NTB25P06T4G | Hersteller : onsemi |
Description: MOSFET P-CH 60V 27.5A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 27.5A (Ta) Rds On (Max) @ Id, Vgs: 82mOhm @ 25A, 10V Power Dissipation (Max): 120W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V |
Produkt ist nicht verfügbar |
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| NTB25P06T4G | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -27.5A; 120W; D2PAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -27.5A Power dissipation: 120W Case: D2PAK Gate-source voltage: ±15V On-state resistance: 75mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |