NTDS015N15MCT4G onsemi
Hersteller: onsemiDescription: MOSFET N-CH 150V 11A/50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 29A, 10V
Power Dissipation (Max): 3.8W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 162µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 75 V
auf Bestellung 2349 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 3.45 EUR |
| 10+ | 2.86 EUR |
| 100+ | 2.28 EUR |
| 500+ | 1.93 EUR |
| 1000+ | 1.64 EUR |
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Technische Details NTDS015N15MCT4G onsemi
Description: MOSFET N-CH 150V 11A/50A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 50A (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 29A, 10V, Power Dissipation (Max): 3.8W (Ta), 83W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 162µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 75 V.
Weitere Produktangebote NTDS015N15MCT4G nach Preis ab 1.69 EUR bis 3.64 EUR
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NTDS015N15MCT4G | Hersteller : onsemi |
MOSFET PTNG 150V 15MOHM DPAK |
auf Bestellung 2357 Stücke: Lieferzeit 10-14 Tag (e) |
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NTDS015N15MCT4G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 150V 11A 3-Pin(2+Tab) DPAK T/R |
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| NTDS015N15MCT4G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 11A; Idm: 246A; 3.8W; DPAK Mounting: SMD Case: DPAK Power dissipation: 3.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 27nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 246A Drain-source voltage: 150V Drain current: 11A On-state resistance: 12.6mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NTDS015N15MCT4G | Hersteller : onsemi |
Description: MOSFET N-CH 150V 11A/50A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 29A, 10V Power Dissipation (Max): 3.8W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 162µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 75 V |
Produkt ist nicht verfügbar |
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| NTDS015N15MCT4G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 11A; Idm: 246A; 3.8W; DPAK Mounting: SMD Case: DPAK Power dissipation: 3.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 27nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 246A Drain-source voltage: 150V Drain current: 11A On-state resistance: 12.6mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |