Technische Details NTD5C688NLT4G ON Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 5.3A; Idm: 77A; 1.7W; DPAK, Mounting: SMD, Case: DPAK, Kind of package: reel; tape, On-state resistance: 32mΩ, Type of transistor: N-MOSFET, Power dissipation: 1.7W, Polarisation: unipolar, Gate charge: 0.9nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 77A, Drain-source voltage: 60V, Drain current: 5.3A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote NTD5C688NLT4G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NTD5C688NLT4G | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 60V 7.5A Automotive 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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| NTD5C688NLT4G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 5.3A; Idm: 77A; 1.7W; DPAK Mounting: SMD Case: DPAK Kind of package: reel; tape On-state resistance: 32mΩ Type of transistor: N-MOSFET Power dissipation: 1.7W Polarisation: unipolar Gate charge: 0.9nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 77A Drain-source voltage: 60V Drain current: 5.3A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NTD5C688NLT4G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 5.3A; Idm: 77A; 1.7W; DPAK Mounting: SMD Case: DPAK Kind of package: reel; tape On-state resistance: 32mΩ Type of transistor: N-MOSFET Power dissipation: 1.7W Polarisation: unipolar Gate charge: 0.9nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 77A Drain-source voltage: 60V Drain current: 5.3A |
Produkt ist nicht verfügbar |