| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
||
|---|---|---|---|---|---|---|---|
 |
FQP7P06 | ONSEMI |
 Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -4.95A; 45W; TO220AB Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -4.95A Power dissipation: 45W Case: TO220AB Gate-source voltage: ±25V On-state resistance: 410mΩ Mounting: THT Gate charge: 8.2nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
|
||
 |
6N137M | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; THT; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 1Mbps; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: gate CTR@If: 19-50%@16mA Transfer rate: 1Mbps Case: DIP8 Turn-on time: 75ns Turn-off time: 75ns Slew rate: 2.5kV/μs |
Produkt ist nicht verfügbar |
|||
 |
BD239C | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 100V; 2A; 30W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 30W Case: TO220AB Current gain: 40 Mounting: THT Kind of package: bulk |
Produkt ist nicht verfügbar |
| FQP7P06 |
|
Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.95A; 45W; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.95A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 410mΩ
Mounting: THT
Gate charge: 8.2nC
Kind of package: tube
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.95A; 45W; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.95A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 410mΩ
Mounting: THT
Gate charge: 8.2nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 35.75 EUR |
| 6N137M |
|
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 1Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: gate
CTR@If: 19-50%@16mA
Transfer rate: 1Mbps
Case: DIP8
Turn-on time: 75ns
Turn-off time: 75ns
Slew rate: 2.5kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 1Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: gate
CTR@If: 19-50%@16mA
Transfer rate: 1Mbps
Case: DIP8
Turn-on time: 75ns
Turn-off time: 75ns
Slew rate: 2.5kV/μs
Produkt ist nicht verfügbar
| BD239C |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 30W
Case: TO220AB
Current gain: 40
Mounting: THT
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 30W
Case: TO220AB
Current gain: 40
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar