| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NCP715MX33TBG | ONSEMI |
 Category: LDO unregulated voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 50mA; XDFN6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.35V Output voltage: 3.3V Output current: 50mA Case: XDFN6 Mounting: SMD Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 2.5...24V Manufacturer series: NCP715 |
Produkt ist nicht verfügbar |
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| NCP715MX53TBG | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5.3V; 50mA; XDFN6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.35V Output voltage: 5.3V Output current: 50mA Case: XDFN6 Mounting: SMD Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 2.5...24V Manufacturer series: NCP715 |
Produkt ist nicht verfügbar |
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ES1B | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A Leakage current: 0.1mA Max. forward impulse current: 30A Load current: 1A Max. forward voltage: 0.92V Max. off-state voltage: 100V Capacitance: 7pF Power dissipation: 1.47W Kind of package: reel; tape Type of diode: rectifying Case: SMA Features of semiconductor devices: fast switching Semiconductor structure: single diode Mounting: SMD Reverse recovery time: 15ns |
auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) |
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| FGB3040G2-F085 | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT Type of transistor: IGBT |
Produkt ist nicht verfügbar |
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| FGB3040G2-F085C | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT Type of transistor: IGBT |
Produkt ist nicht verfügbar |
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| FGB3245G2-F085 | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT Type of transistor: IGBT |
Produkt ist nicht verfügbar |
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| FGD3040G2-F085 | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT Type of transistor: IGBT |
Produkt ist nicht verfügbar |
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| FGD3040G2-F085C | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT Type of transistor: IGBT |
Produkt ist nicht verfügbar |
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| FGD3040G2-F085V | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT Type of transistor: IGBT |
Produkt ist nicht verfügbar |
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| FGD3245G2-F085C | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT Type of transistor: IGBT |
Produkt ist nicht verfügbar |
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| FGD3440G2-F085 | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT Type of transistor: IGBT |
Produkt ist nicht verfügbar |
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| 1N4935G | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41 Mounting: THT Max. forward voltage: 1.2V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 200ns Max. forward impulse current: 30A Kind of package: bulk Type of diode: rectifying Features of semiconductor devices: fast switching Case: CASE59-10; DO41 Max. off-state voltage: 200V |
Produkt ist nicht verfügbar |
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| 1N4935RLG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 1A; reel,tape; Ifsm: 30A; Ufmax: 1.2V Mounting: THT Max. forward voltage: 1.2V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 200ns Max. forward impulse current: 30A Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: fast switching Case: CASE59-10; DO41 Max. off-state voltage: 200V |
Produkt ist nicht verfügbar |
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| FSA641UMX | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 2; UMLP20; 2.65÷4.3VDC; OUT: SPDT; 1uA Type of integrated circuit: analog switch Number of channels: 2 Case: UMLP20 Supply voltage: 2.65...4.3V DC Mounting: SMD Operating temperature: -40...85°C Kind of output: SPDT Quiescent current: 1µA |
Produkt ist nicht verfügbar |
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ES2D | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 20ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 18pF Case: SMB Max. forward voltage: 0.9V Max. forward impulse current: 50A Leakage current: 0.35mA Power dissipation: 1.66W Kind of package: reel; tape |
auf Bestellung 773 Stücke: Lieferzeit 14-21 Tag (e) |
|
| NCP715MX33TBG |
|
Hersteller: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 50mA; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 3.3V
Output current: 50mA
Case: XDFN6
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...24V
Manufacturer series: NCP715
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 50mA; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 3.3V
Output current: 50mA
Case: XDFN6
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...24V
Manufacturer series: NCP715
Produkt ist nicht verfügbar
| NCP715MX53TBG |
Hersteller: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5.3V; 50mA; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 5.3V
Output current: 50mA
Case: XDFN6
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...24V
Manufacturer series: NCP715
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5.3V; 50mA; XDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 5.3V
Output current: 50mA
Case: XDFN6
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...24V
Manufacturer series: NCP715
Produkt ist nicht verfügbar
| ES1B |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A
Leakage current: 0.1mA
Max. forward impulse current: 30A
Load current: 1A
Max. forward voltage: 0.92V
Max. off-state voltage: 100V
Capacitance: 7pF
Power dissipation: 1.47W
Kind of package: reel; tape
Type of diode: rectifying
Case: SMA
Features of semiconductor devices: fast switching
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 15ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A
Leakage current: 0.1mA
Max. forward impulse current: 30A
Load current: 1A
Max. forward voltage: 0.92V
Max. off-state voltage: 100V
Capacitance: 7pF
Power dissipation: 1.47W
Kind of package: reel; tape
Type of diode: rectifying
Case: SMA
Features of semiconductor devices: fast switching
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 15ns
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 239+ | 0.3 EUR |
| 400+ | 0.17 EUR |
| FGB3040G2-F085 |
|
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Produkt ist nicht verfügbar
| FGB3040G2-F085C |
|
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Produkt ist nicht verfügbar
| FGB3245G2-F085 |
|
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Produkt ist nicht verfügbar
| FGD3040G2-F085 |
|
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Produkt ist nicht verfügbar
| FGD3040G2-F085C |
|
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Produkt ist nicht verfügbar
| FGD3040G2-F085V |
|
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Produkt ist nicht verfügbar
| FGD3245G2-F085C |
|
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Produkt ist nicht verfügbar
| FGD3440G2-F085 |
|
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Produkt ist nicht verfügbar
| 1N4935G |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41
Mounting: THT
Max. forward voltage: 1.2V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 200ns
Max. forward impulse current: 30A
Kind of package: bulk
Type of diode: rectifying
Features of semiconductor devices: fast switching
Case: CASE59-10; DO41
Max. off-state voltage: 200V
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41
Mounting: THT
Max. forward voltage: 1.2V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 200ns
Max. forward impulse current: 30A
Kind of package: bulk
Type of diode: rectifying
Features of semiconductor devices: fast switching
Case: CASE59-10; DO41
Max. off-state voltage: 200V
Produkt ist nicht verfügbar
| 1N4935RLG |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; reel,tape; Ifsm: 30A; Ufmax: 1.2V
Mounting: THT
Max. forward voltage: 1.2V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 200ns
Max. forward impulse current: 30A
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: fast switching
Case: CASE59-10; DO41
Max. off-state voltage: 200V
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; reel,tape; Ifsm: 30A; Ufmax: 1.2V
Mounting: THT
Max. forward voltage: 1.2V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 200ns
Max. forward impulse current: 30A
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: fast switching
Case: CASE59-10; DO41
Max. off-state voltage: 200V
Produkt ist nicht verfügbar
| FSA641UMX |
|
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP20; 2.65÷4.3VDC; OUT: SPDT; 1uA
Type of integrated circuit: analog switch
Number of channels: 2
Case: UMLP20
Supply voltage: 2.65...4.3V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of output: SPDT
Quiescent current: 1µA
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP20; 2.65÷4.3VDC; OUT: SPDT; 1uA
Type of integrated circuit: analog switch
Number of channels: 2
Case: UMLP20
Supply voltage: 2.65...4.3V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of output: SPDT
Quiescent current: 1µA
Produkt ist nicht verfügbar
| ES2D |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 18pF
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Leakage current: 0.35mA
Power dissipation: 1.66W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 18pF
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Leakage current: 0.35mA
Power dissipation: 1.66W
Kind of package: reel; tape
auf Bestellung 773 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 218+ | 0.33 EUR |
| 274+ | 0.26 EUR |
| 360+ | 0.2 EUR |
| 382+ | 0.19 EUR |