Technische Details NVMFS5C604NLT1G ON Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 203A; 100W; DFN5x6, Mounting: SMD, Kind of channel: enhanced, Gate-source voltage: ±20V, Case: DFN5x6, Drain-source voltage: 60V, Drain current: 203A, On-state resistance: 1.2mΩ, Type of transistor: N-MOSFET, Power dissipation: 100W, Polarisation: unipolar, Kind of package: reel; tape, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote NVMFS5C604NLT1G
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NVMFS5C604NLT1G | Hersteller : ONSEMI |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 203A; 100W; DFN5x6 Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±20V Case: DFN5x6 Drain-source voltage: 60V Drain current: 203A On-state resistance: 1.2mΩ Type of transistor: N-MOSFET Power dissipation: 100W Polarisation: unipolar Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NVMFS5C604NLT1G | Hersteller : onsemi |
Description: MOSFET N-CH 60V 40A/287A 5DFN |
Produkt ist nicht verfügbar |
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NVMFS5C604NLT1G | Hersteller : onsemi |
Description: MOSFET N-CH 60V 40A/287A 5DFN |
Produkt ist nicht verfügbar |
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NVMFS5C604NLT1G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 203A; 100W; DFN5x6 Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±20V Case: DFN5x6 Drain-source voltage: 60V Drain current: 203A On-state resistance: 1.2mΩ Type of transistor: N-MOSFET Power dissipation: 100W Polarisation: unipolar Kind of package: reel; tape |
Produkt ist nicht verfügbar |