NVD5C688NLT4G onsemi
Hersteller: onsemiDescription: MOSFET N-CHANNEL 60V 17A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 27.4mOhm @ 10A, 10V
Power Dissipation (Max): 18W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2325 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 2.45 EUR |
| 10+ | 2.04 EUR |
| 100+ | 1.62 EUR |
| 500+ | 1.37 EUR |
| 1000+ | 1.17 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NVD5C688NLT4G onsemi
Description: MOSFET N-CHANNEL 60V 17A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 27.4mOhm @ 10A, 10V, Power Dissipation (Max): 18W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: DPAK, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote NVD5C688NLT4G nach Preis ab 1.14 EUR bis 2.66 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
NVD5C688NLT4G | Hersteller : onsemi |
MOSFET T6 60V LL DPAK |
auf Bestellung 8340 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
NVD5C688NLT4G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 77A; 9W; DPAK Mounting: SMD Case: DPAK Kind of package: reel; tape On-state resistance: 27.4mΩ Type of transistor: N-MOSFET Power dissipation: 9W Polarisation: unipolar Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±16V Pulsed drain current: 77A Drain-source voltage: 60V Drain current: 12A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1961 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||
|
|
NVD5C688NLT4G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 77A; 9W; DPAK Mounting: SMD Case: DPAK Kind of package: reel; tape On-state resistance: 27.4mΩ Type of transistor: N-MOSFET Power dissipation: 9W Polarisation: unipolar Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±16V Pulsed drain current: 77A Drain-source voltage: 60V Drain current: 12A |
auf Bestellung 1961 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
NVD5C688NLT4G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 7A Automotive 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
NVD5C688NLT4G | Hersteller : onsemi |
Description: MOSFET N-CHANNEL 60V 17A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 27.4mOhm @ 10A, 10V Power Dissipation (Max): 18W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: DPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |