![NTHL160N120SC1 NTHL160N120SC1](https://static6.arrow.com/aropdfconversion/arrowimages/c0e23eaae048d5c72370d3c4210863f264b1172d/to-247.jpg)
NTHL160N120SC1 ON Semiconductor
auf Bestellung 783 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
18+ | 8.84 EUR |
19+ | 8.32 EUR |
25+ | 6.93 EUR |
100+ | 6.47 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NTHL160N120SC1 ON Semiconductor
Description: SICFET N-CH 1200V 17A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V, Power Dissipation (Max): 119W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 2.5mA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -15V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V.
Weitere Produktangebote NTHL160N120SC1 nach Preis ab 6.92 EUR bis 13.64 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
NTHL160N120SC1 | Hersteller : ON Semiconductor |
![]() |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
NTHL160N120SC1 | Hersteller : onsemi |
![]() |
auf Bestellung 1576 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
NTHL160N120SC1 | Hersteller : onsemi |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V Power Dissipation (Max): 119W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 2.5mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V |
auf Bestellung 315 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
NTHL160N120SC1 | Hersteller : ON Semiconductor |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||||
![]() |
NTHL160N120SC1 | Hersteller : ON Semiconductor |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||||
![]() |
NTHL160N120SC1 | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W Case: TO247-3 Mounting: THT Kind of package: tube Technology: SiC On-state resistance: 0.16Ω Type of transistor: N-MOSFET Power dissipation: 59W Polarisation: unipolar Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: -15...25V Pulsed drain current: 69A Drain-source voltage: 1.2kV Drain current: 12A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||||
![]() |
NTHL160N120SC1 | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W Case: TO247-3 Mounting: THT Kind of package: tube Technology: SiC On-state resistance: 0.16Ω Type of transistor: N-MOSFET Power dissipation: 59W Polarisation: unipolar Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: -15...25V Pulsed drain current: 69A Drain-source voltage: 1.2kV Drain current: 12A |
Produkt ist nicht verfügbar |