NTHD4508NT1G onsemi
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 3A CHIPFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.13W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Active
Description: MOSFET 2N-CH 20V 3A CHIPFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.13W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.81 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NTHD4508NT1G onsemi
Description: ONSEMI - NTHD4508NT1G - Dual-MOSFET, n-Kanal, 20 V, 20 V, 4.1 A, 4.1 A, 0.06 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 4.1A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: 20V, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 4.1A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.06ohm, Verlustleistung, p-Kanal: 2.1W, Drain-Source-Spannung Vds, n-Kanal: 20V, euEccn: NLR, Bauform - Transistor: ChipFET, Anzahl der Pins: 8Pin(s), Produktpalette: Multicomp Pro RJ45 Adapter, Drain-Source-Durchgangswiderstand, n-Kanal: 0.06ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 2.1W, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (14-Jun-2023).
Weitere Produktangebote NTHD4508NT1G nach Preis ab 0.76 EUR bis 1.97 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NTHD4508NT1G | Hersteller : onsemi |
Description: MOSFET 2N-CH 20V 3A CHIPFET Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.13W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V Rds On (Max) @ Id, Vgs: 75mOhm @ 3.1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: ChipFET™ Part Status: Active |
auf Bestellung 5786 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
NTHD4508NT1G | Hersteller : onsemi | MOSFET 20V 4.1A Dual N-Channel |
auf Bestellung 16499 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
NTHD4508NT1G | Hersteller : ONSEMI |
Description: ONSEMI - NTHD4508NT1G - Dual-MOSFET, n-Kanal, 20 V, 20 V, 4.1 A, 4.1 A, 0.06 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 4.1A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 20V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 4.1A Drain-Source-Durchgangswiderstand, p-Kanal: 0.06ohm Verlustleistung, p-Kanal: 2.1W Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: ChipFET Anzahl der Pins: 8Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter Drain-Source-Durchgangswiderstand, n-Kanal: 0.06ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 2.1W Betriebstemperatur, max.: 150°C SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 765 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||||
NTHD4508NT1G | Hersteller : ON Semiconductor | Trans MOSFET N-CH 20V 3A 8-Pin Chip FET T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||||
NTHD4508NT1G Produktcode: 133952 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
|
|||||||||||||||||||
NTHD4508NT1G | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.2A; Idm: 12A; 590mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.2A Pulsed drain current: 12A Power dissipation: 0.59W Case: ChipFET Gate-source voltage: ±12V On-state resistance: 80mΩ Mounting: SMD Gate charge: 2.6nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
NTHD4508NT1G | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.2A; Idm: 12A; 590mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.2A Pulsed drain current: 12A Power dissipation: 0.59W Case: ChipFET Gate-source voltage: ±12V On-state resistance: 80mΩ Mounting: SMD Gate charge: 2.6nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |