auf Bestellung 440 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 19.52 EUR |
| 10+ | 18.67 EUR |
| 25+ | 15.49 EUR |
| 100+ | 13.94 EUR |
| 250+ | 13.71 EUR |
| 450+ | 12.3 EUR |
| 900+ | 11.07 EUR |
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Technische Details NTHL065N65S3F onsemi
Description: MOSFET N-CH 650V 46A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 23A, 10V, Power Dissipation (Max): 337W (Tc), Vgs(th) (Max) @ Id: 5V @ 4.6mA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4075 pF @ 400 V.
Weitere Produktangebote NTHL065N65S3F nach Preis ab 11.11 EUR bis 19.57 EUR
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NTHL065N65S3F | Hersteller : onsemi |
 Description: MOSFET N-CH 650V 46A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 23A, 10V Power Dissipation (Max): 337W (Tc) Vgs(th) (Max) @ Id: 5V @ 4.6mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4075 pF @ 400 V |
auf Bestellung 6596 Stücke: Lieferzeit 10-14 Tag (e) |
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NTHL065N65S3F | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 650V 46A 3-Pin(3+Tab) TO-247 Tube |
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NTHL065N65S3F | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 650V 46A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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NTHL065N65S3F | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 650V 46A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| NTHL065N65S3F | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 115A; 337W; TO247 Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 115A Power dissipation: 337W Case: TO247 Gate-source voltage: ±30V On-state resistance: 65mΩ Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 450 Stücke |
Produkt ist nicht verfügbar |
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| NTHL065N65S3F | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 115A; 337W; TO247 Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 115A Power dissipation: 337W Case: TO247 Gate-source voltage: ±30V On-state resistance: 65mΩ Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |