NTJD4401NT1G onsemi
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 0.63A SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 630mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Description: MOSFET 2N-CH 20V 0.63A SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 630mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.16 EUR |
9000+ | 0.14 EUR |
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Technische Details NTJD4401NT1G onsemi
Description: ONSEMI - NTJD4401NT1G - Dual-MOSFET, n-Kanal, 20 V, 630 mA, 0.29 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: -, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 630mA, Drain-Source-Durchgangswiderstand, p-Kanal: -, Verlustleistung, p-Kanal: -, Drain-Source-Spannung Vds, n-Kanal: 20V, euEccn: NLR, Bauform - Transistor: SOT-363, Anzahl der Pins: 6Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.29ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 270mW, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (23-Jan-2024).
Weitere Produktangebote NTJD4401NT1G nach Preis ab 0.13 EUR bis 0.72 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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NTJD4401NT1G | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.46A; 0.27W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.46A Power dissipation: 0.27W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±12V On-state resistance: 445mΩ Mounting: SMD Gate charge: 1.3nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1800 Stücke: Lieferzeit 7-14 Tag (e) |
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NTJD4401NT1G | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.46A; 0.27W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.46A Power dissipation: 0.27W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±12V On-state resistance: 445mΩ Mounting: SMD Gate charge: 1.3nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
auf Bestellung 1800 Stücke: Lieferzeit 14-21 Tag (e) |
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NTJD4401NT1G | Hersteller : onsemi | MOSFET 20V Dual N-Channel ESD Protection |
auf Bestellung 19133 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJD4401NT1G | Hersteller : onsemi |
Description: MOSFET 2N-CH 20V 0.63A SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 270mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 630mA Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active |
auf Bestellung 22816 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJD4401NT1G | Hersteller : ONSEMI |
Description: ONSEMI - NTJD4401NT1G - Dual-MOSFET, n-Kanal, 20 V, 630 mA, 0.29 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 630mA Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.29ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 270mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 6219 Stücke: Lieferzeit 14-21 Tag (e) |
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NTJD4401NT1G | Hersteller : ON Semiconductor | Trans MOSFET N-CH 20V 0.91A 6-Pin SC-88 T/R |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |