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NTGS4111PT1G onsemi
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Description: MOSFET P-CH 30V 2.6A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.7A, 10V
Power Dissipation (Max): 630mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.3 EUR |
6000+ | 0.28 EUR |
9000+ | 0.26 EUR |
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Technische Details NTGS4111PT1G onsemi
Description: MOSFET P-CH 30V 2.6A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 3.7A, 10V, Power Dissipation (Max): 630mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 6-TSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V.
Weitere Produktangebote NTGS4111PT1G nach Preis ab 0.28 EUR bis 0.9 EUR
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NTGS4111PT1G | Hersteller : onsemi |
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auf Bestellung 21296 Stücke: Lieferzeit 10-14 Tag (e) |
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NTGS4111PT1G | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.7A, 10V Power Dissipation (Max): 630mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V |
auf Bestellung 36114 Stücke: Lieferzeit 10-14 Tag (e) |
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NTGS4111PT1G | Hersteller : ON Semiconductor |
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auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTGS4111PT1G | Hersteller : ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; 1.25W; TSOP6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.7A Power dissipation: 1.25W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NTGS4111PT1G | Hersteller : ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; 1.25W; TSOP6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.7A Power dissipation: 1.25W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |