Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (139478) > Seite 1244 nach 2325

Wählen Sie Seite:   [  << Vorherige Seite ]  1 232 464 696 928 1160 1239 1240 1241 1242 1243 1244 1245 1246 1247 1248 1249 1392 1624 1856 2088 2320 2325  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
ohne MwSt
IRGP30B60KD-EP IRGP30B60KD-EP INFINEON TECHNOLOGIES irgp30b60kd-epbf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 304W; TO247-3
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Case: TO247-3
Power dissipation: 304W
Collector-emitter voltage: 600V
Type of transistor: IGBT
Collector current: 60A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRGP4066DPBF IRGP4066DPBF INFINEON TECHNOLOGIES IRGP4066DPBF.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 454W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Power dissipation: 454W
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 75A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRGP4263DPBF IRGP4263DPBF INFINEON TECHNOLOGIES IRGP4263DPBF.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 90A; 325W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Collector current: 90A
Type of transistor: IGBT
Power dissipation: 325W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRGS6B60KDPBF IRGS6B60KDPBF INFINEON TECHNOLOGIES irgs6b60kdpbf.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 13A; 90W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 13A
Power dissipation: 90W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRGS6B60KDTRLP IRGS6B60KDTRLP INFINEON TECHNOLOGIES IRGS6B60KDTRLP.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 13A; 90W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 13A
Power dissipation: 90W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRGSL4062DPBF IRGSL4062DPBF INFINEON TECHNOLOGIES irgs4062dpbf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 48A; 250W; TO262
Case: TO262
Mounting: THT
Kind of package: tube
Collector current: 48A
Power dissipation: 250W
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 600V
Type of transistor: IGBT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRL1004PBF IRL1004PBF INFINEON TECHNOLOGIES irl1004pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 108 Stücke:
Lieferzeit 7-14 Tag (e)
25+2.92 EUR
35+ 2.06 EUR
37+ 1.94 EUR
500+ 1.9 EUR
Mindestbestellmenge: 25
IRL100HS121 IRL100HS121 INFINEON TECHNOLOGIES IRL100HS121.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.8A; 5.8W; PQFN2X2
Mounting: SMD
Case: PQFN2X2
Drain-source voltage: 100V
Drain current: 7.8A
On-state resistance: 42mΩ
Type of transistor: N-MOSFET
Power dissipation: 5.8W
Polarisation: unipolar
Kind of package: reel
Gate charge: 3.7nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRL1404STRLPBF IRL1404STRLPBF INFINEON TECHNOLOGIES IRL1404STRLPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 3.8W; D2PAK
Mounting: SMD
Kind of package: reel
Drain current: 160A
Type of transistor: N-MOSFET
Power dissipation: 3.8W
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhanced
Case: D2PAK
Drain-source voltage: 40V
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRL1404ZPBF IRL1404ZPBF INFINEON TECHNOLOGIES irl1404zpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 790A; 230W; TO220AB
Mounting: THT
Kind of package: tube
Drain current: 120A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 230W
Polarisation: unipolar
Features of semiconductor devices: logic level
Gate charge: 75nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 790A
Case: TO220AB
Drain-source voltage: 40V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 98 Stücke:
Lieferzeit 7-14 Tag (e)
28+2.65 EUR
31+ 2.32 EUR
44+ 1.66 EUR
46+ 1.56 EUR
1000+ 1.5 EUR
Mindestbestellmenge: 28
IRL1404ZSTRLPBF IRL1404ZSTRLPBF INFINEON TECHNOLOGIES irl1404xxPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 790A; 230W; D2PAK
Mounting: SMD
Kind of package: reel
Drain current: 120A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 230W
Polarisation: unipolar
Features of semiconductor devices: logic level
Gate charge: 75nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 790A
Case: D2PAK
Drain-source voltage: 40V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 810 Stücke:
Lieferzeit 7-14 Tag (e)
38+1.92 EUR
42+ 1.73 EUR
54+ 1.33 EUR
57+ 1.26 EUR
Mindestbestellmenge: 38
IRL2203NSTRLPBF IRL2203NSTRLPBF INFINEON TECHNOLOGIES irl2203nspbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 116A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 116A
Power dissipation: 170W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRL2505PBF IRL2505PBF INFINEON TECHNOLOGIES irl2505pbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 104A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 104A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)
29+2.53 EUR
35+ 2.04 EUR
47+ 1.53 EUR
50+ 1.44 EUR
2000+ 1.4 EUR
Mindestbestellmenge: 29
IRL2505STRLPBF INFINEON TECHNOLOGIES irl2505spbf.pdf?fileId=5546d462533600a40153565b75022502 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 74A; Idm: 360A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 74A
Pulsed drain current: 360A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRL2910STRLPBF IRL2910STRLPBF INFINEON TECHNOLOGIES irl2910spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 55A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 55A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRL3103STRLPBF IRL3103STRLPBF INFINEON TECHNOLOGIES irl3103spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 64A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRL3705NPBF IRL3705NPBF INFINEON TECHNOLOGIES irl3705n.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 130W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 65.3nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1277 Stücke:
Lieferzeit 7-14 Tag (e)
37+1.97 EUR
74+ 0.97 EUR
79+ 0.92 EUR
Mindestbestellmenge: 37
IRL3705NSTRLPBF IRL3705NSTRLPBF INFINEON TECHNOLOGIES irl3705nspbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 170W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRL3705ZPBF IRL3705ZPBF INFINEON TECHNOLOGIES irl3705z.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 130W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRL3705ZSTRLPBF IRL3705ZSTRLPBF INFINEON TECHNOLOGIES IRL3705ZSTRLPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 86A; 130W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 86A
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRL3803PBF IRL3803PBF INFINEON TECHNOLOGIES irl3803.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; 150W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 93.3nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)
6+11.91 EUR
10+ 7.15 EUR
13+ 5.51 EUR
34+ 2.1 EUR
1000+ 1.26 EUR
Mindestbestellmenge: 6
IRL3803STRLPBF IRL3803STRLPBF INFINEON TECHNOLOGIES irl3803spbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 140A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 140A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRL40B209 IRL40B209 INFINEON TECHNOLOGIES Infineon-IRL40B209-DS-v02_00-EN.pdf?fileId=5546d46256fb43b301576b16f39706f5 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 293A; Idm: 1707A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 293A
Pulsed drain current: 1707A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.25mΩ
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRL40B212 IRL40B212 INFINEON TECHNOLOGIES IRL40B212.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 179A; 231W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 179A
Power dissipation: 231W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRL40B215 IRL40B215 INFINEON TECHNOLOGIES IRL40B215.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 116A; 143W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 116A
Power dissipation: 143W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRL520NPBF IRL520NPBF INFINEON TECHNOLOGIES irl520n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 48W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 48W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 13.3nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRL530NSTRLPBF IRL530NSTRLPBF INFINEON TECHNOLOGIES irl530nspbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Power dissipation: 3.8W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 844 Stücke:
Lieferzeit 7-14 Tag (e)
43+1.7 EUR
50+ 1.43 EUR
100+ 0.72 EUR
106+ 0.68 EUR
5600+ 0.65 EUR
Mindestbestellmenge: 43
IRL540NPBF IRL540NPBF INFINEON TECHNOLOGIES irl540n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 49.3nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6592 Stücke:
Lieferzeit 7-14 Tag (e)
59+1.22 EUR
70+ 1.04 EUR
134+ 0.53 EUR
142+ 0.51 EUR
5000+ 0.49 EUR
Mindestbestellmenge: 59
IRL540NSTRLPBF IRL540NSTRLPBF INFINEON TECHNOLOGIES irl540nspbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 803 Stücke:
Lieferzeit 7-14 Tag (e)
33+2.17 EUR
38+ 1.89 EUR
76+ 0.94 EUR
80+ 0.9 EUR
Mindestbestellmenge: 33
IRL60B216 IRL60B216 INFINEON TECHNOLOGIES IRL60B216.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 215A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 215A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: THT
Gate charge: 172nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRL60HS118 IRL60HS118 INFINEON TECHNOLOGIES IRL60HS118.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; 5.8W; PQFN2X2
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 13A
Power dissipation: 5.8W
Case: PQFN2X2
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRL6342TRPBF IRL6342TRPBF INFINEON TECHNOLOGIES irl6342pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.9A; 2.5W; SO8
Mounting: SMD
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Case: SO8
Drain-source voltage: 30V
Drain current: 9.9A
On-state resistance: 14.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3451 Stücke:
Lieferzeit 7-14 Tag (e)
146+0.49 EUR
175+ 0.41 EUR
202+ 0.35 EUR
213+ 0.34 EUR
4000+ 0.32 EUR
Mindestbestellmenge: 146
IRL6372TRPBF IRL6372TRPBF INFINEON TECHNOLOGIES irl6372pbf.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.1A; 2.5W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.1A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 17.9mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 487 Stücke:
Lieferzeit 7-14 Tag (e)
80+0.9 EUR
92+ 0.79 EUR
157+ 0.46 EUR
166+ 0.43 EUR
4000+ 0.41 EUR
Mindestbestellmenge: 80
IRL7833PBF IRL7833PBF INFINEON TECHNOLOGIES irl7833pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; TO220AB
Kind of package: tube
Drain-source voltage: 30V
Drain current: 150A
On-state resistance: 3.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Features of semiconductor devices: logic level
Gate charge: 32nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
Anzahl je Verpackung: 1 Stücke
auf Bestellung 74 Stücke:
Lieferzeit 7-14 Tag (e)
33+2.2 EUR
41+ 1.76 EUR
57+ 1.27 EUR
60+ 1.2 EUR
Mindestbestellmenge: 33
IRL7833STRLPBF IRL7833STRLPBF INFINEON TECHNOLOGIES irl7833pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; D2PAK
Kind of package: reel
Drain-source voltage: 30V
Drain current: 150A
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: D2PAK
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRL80HS120 IRL80HS120 INFINEON TECHNOLOGIES IRL80HS120.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 9A; 5.8W; PQFN2X2
Mounting: SMD
Case: PQFN2X2
Drain-source voltage: 80V
Drain current: 9A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 5.8W
Polarisation: unipolar
Kind of package: reel
Gate charge: 4.7nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRLB3034PBF IRLB3034PBF INFINEON TECHNOLOGIES irlb3034pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 343A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 202 Stücke:
Lieferzeit 7-14 Tag (e)
20+3.72 EUR
25+ 2.86 EUR
27+ 2.69 EUR
100+ 2.63 EUR
250+ 2.59 EUR
Mindestbestellmenge: 20
IRLB3036PBF IRLB3036PBF INFINEON TECHNOLOGIES irlb3036pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 95 Stücke:
Lieferzeit 7-14 Tag (e)
15+4.95 EUR
21+ 3.52 EUR
22+ 3.32 EUR
Mindestbestellmenge: 15
IRLB3813PBF IRLB3813PBF INFINEON TECHNOLOGIES irlb3813pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 260A; 230W; TO220AB
Case: TO220AB
Drain-source voltage: 30V
Drain current: 260A
On-state resistance: 1.95mΩ
Type of transistor: N-MOSFET
Power dissipation: 230W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: logic level
Gate charge: 57nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 69 Stücke:
Lieferzeit 7-14 Tag (e)
35+2.1 EUR
38+ 1.9 EUR
43+ 1.69 EUR
49+ 1.47 EUR
52+ 1.39 EUR
Mindestbestellmenge: 35
IRLB4030PBF IRLB4030PBF INFINEON TECHNOLOGIES irlb4030pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO220AB
Mounting: THT
Type of transistor: N-MOSFET
Power dissipation: 370W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: logic level
Gate charge: 87nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±16V
Case: TO220AB
Drain-source voltage: 100V
Drain current: 180A
On-state resistance: 4.3mΩ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 125 Stücke:
Lieferzeit 7-14 Tag (e)
19+3.86 EUR
29+ 2.53 EUR
30+ 2.39 EUR
500+ 2.33 EUR
1000+ 2.29 EUR
Mindestbestellmenge: 19
IRLB4132PBF IRLB4132PBF INFINEON TECHNOLOGIES IRLB4132PbF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 620A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 620A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 163 Stücke:
Lieferzeit 7-14 Tag (e)
67+1.07 EUR
99+ 0.73 EUR
112+ 0.64 EUR
129+ 0.56 EUR
136+ 0.53 EUR
Mindestbestellmenge: 67
IRLB8314PBF IRLB8314PBF INFINEON TECHNOLOGIES irlb8314pbf.pdf?fileId=5546d462533600a4015356604d6f258f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 664A; 125W; TO220AB
Drain-source voltage: 30V
Drain current: 120A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 664A
Mounting: THT
Case: TO220AB
Anzahl je Verpackung: 1 Stücke
auf Bestellung 78 Stücke:
Lieferzeit 7-14 Tag (e)
61+1.19 EUR
72+ 1 EUR
78+ 0.92 EUR
84+ 0.86 EUR
5000+ 0.5 EUR
Mindestbestellmenge: 61
IRLB8721PBF IRLB8721PBF INFINEON TECHNOLOGIES irlb8721pbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 62A; 65W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 62A
Power dissipation: 65W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.7mΩ
Mounting: THT
Gate charge: 7.6nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2013 Stücke:
Lieferzeit 7-14 Tag (e)
58+1.24 EUR
79+ 0.91 EUR
121+ 0.59 EUR
128+ 0.56 EUR
10000+ 0.55 EUR
Mindestbestellmenge: 58
IRLB8743PBF IRLB8743PBF INFINEON TECHNOLOGIES irlb8743pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 150A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 995 Stücke:
Lieferzeit 7-14 Tag (e)
59+1.22 EUR
65+ 1.12 EUR
73+ 0.99 EUR
85+ 0.84 EUR
90+ 0.8 EUR
Mindestbestellmenge: 59
IRLB8748PBF IRLB8748PBF INFINEON TECHNOLOGIES irlb8748pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 92A; 75W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 92A
Power dissipation: 75W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 132 Stücke:
Lieferzeit 7-14 Tag (e)
58+1.24 EUR
83+ 0.87 EUR
132+ 0.54 EUR
10000+ 0.47 EUR
Mindestbestellmenge: 58
IRLH5030TRPBF IRLH5030TRPBF INFINEON TECHNOLOGIES irlh5030pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRLH5034TRPBF IRLH5034TRPBF INFINEON TECHNOLOGIES irlh5034pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 29A; 3.6W; PQFN5X6
Mounting: SMD
Power dissipation: 3.6W
Polarisation: unipolar
Technology: HEXFET®
Features of semiconductor devices: logic level
Drain current: 29A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Case: PQFN5X6
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRLHM620TRPBF IRLHM620TRPBF INFINEON TECHNOLOGIES irlhm620pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 40A; 2.7W; PQFN3.3X3.3
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 40A
Power dissipation: 2.7W
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRLHM630TRPBF IRLHM630TRPBF INFINEON TECHNOLOGIES irlhm630pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.7W; PQFN3.3X3.3
Kind of package: reel
Technology: HEXFET®
Drain-source voltage: 30V
Drain current: 21A
Type of transistor: N-MOSFET
Power dissipation: 2.7W
Polarisation: unipolar
Features of semiconductor devices: logic level
Kind of channel: enhanced
Mounting: SMD
Case: PQFN3.3X3.3
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRLHS2242TRPBF IRLHS2242TRPBF INFINEON TECHNOLOGIES irlhs2242pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.2A; 2.1W; PQFN3.3X3.3
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhanced
Drain-source voltage: -20V
Drain current: -7.2A
Type of transistor: P-MOSFET
Power dissipation: 2.1W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3894 Stücke:
Lieferzeit 7-14 Tag (e)
162+0.44 EUR
218+ 0.33 EUR
332+ 0.22 EUR
350+ 0.2 EUR
Mindestbestellmenge: 162
IRLHS6242TRPBF IRLHS6242TRPBF INFINEON TECHNOLOGIES irlhs6242pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 10A; 1.98W; PQFN2X2
Mounting: SMD
Power dissipation: 1.98W
Polarisation: unipolar
Kind of package: reel
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhanced
Case: PQFN2X2
Drain-source voltage: 20V
Drain current: 10A
Type of transistor: N-MOSFET
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRLHS6276TRPBF IRLHS6276TRPBF INFINEON TECHNOLOGIES irlhs6276pbf.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 12A; 4.5W; PQFN2X2
Kind of package: reel
Drain-source voltage: 20V
Drain current: 12A
Type of transistor: N-MOSFET x2
Power dissipation: 4.5W
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: PQFN2X2
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRFHM6342TR2PBF IRFHM6342TR2PBF INFINEON TECHNOLOGIES irlhs6342pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.1W; PQFN2X2
Mounting: SMD
Case: PQFN2X2
Power dissipation: 2.1W
Polarisation: unipolar
Type of transistor: N-MOSFET
Drain current: 8.5A
Drain-source voltage: 30V
Features of semiconductor devices: logic level
Gate charge: 11nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 15.5mΩ
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRLHS6376TRPBF IRLHS6376TRPBF INFINEON TECHNOLOGIES irlhs6376pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; 1.5W; PQFN2X2
Case: PQFN2X2
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhanced
Drain-source voltage: 30V
Drain current: 3.6A
Type of transistor: N-MOSFET
Power dissipation: 1.5W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3874 Stücke:
Lieferzeit 7-14 Tag (e)
179+0.4 EUR
199+ 0.36 EUR
260+ 0.28 EUR
275+ 0.26 EUR
Mindestbestellmenge: 179
IRLL014NTRPBF IRLL014NTRPBF INFINEON TECHNOLOGIES irll014npbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 2A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 2A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2186 Stücke:
Lieferzeit 7-14 Tag (e)
95+0.76 EUR
105+ 0.68 EUR
131+ 0.55 EUR
260+ 0.28 EUR
275+ 0.26 EUR
Mindestbestellmenge: 95
IRLL024NTRPBF IRLL024NTRPBF INFINEON TECHNOLOGIES irll024n.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.4A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4.4A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 10.4nC
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2958 Stücke:
Lieferzeit 7-14 Tag (e)
77+0.93 EUR
203+ 0.35 EUR
215+ 0.33 EUR
7500+ 0.32 EUR
Mindestbestellmenge: 77
IRLL024ZTRPBF IRLL024ZTRPBF INFINEON TECHNOLOGIES irll024zpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4A; Idm: 40A; 1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4A
Pulsed drain current: 40A
Power dissipation: 1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2672 Stücke:
Lieferzeit 7-14 Tag (e)
40+1.8 EUR
92+ 0.78 EUR
102+ 0.7 EUR
133+ 0.54 EUR
141+ 0.51 EUR
Mindestbestellmenge: 40
IRLL2703TRPBF IRLL2703TRPBF INFINEON TECHNOLOGIES IRSDS06555-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 16A; 1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.1A
Pulsed drain current: 16A
Power dissipation: 1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 45mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
IRLL2705TRPBF IRLL2705TRPBF INFINEON TECHNOLOGIES irll2705pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.8A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 3.8A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3002 Stücke:
Lieferzeit 7-14 Tag (e)
70+1.03 EUR
82+ 0.87 EUR
159+ 0.45 EUR
168+ 0.43 EUR
5000+ 0.41 EUR
Mindestbestellmenge: 70
IRLML0030TRPBF IRLML0030TRPBF INFINEON TECHNOLOGIES irlml0030pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.3A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8798 Stücke:
Lieferzeit 7-14 Tag (e)
173+0.41 EUR
247+ 0.29 EUR
307+ 0.23 EUR
410+ 0.17 EUR
596+ 0.12 EUR
633+ 0.11 EUR
Mindestbestellmenge: 173
IRGP30B60KD-EP irgp30b60kd-epbf.pdf
IRGP30B60KD-EP
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 304W; TO247-3
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Case: TO247-3
Power dissipation: 304W
Collector-emitter voltage: 600V
Type of transistor: IGBT
Collector current: 60A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRGP4066DPBF IRGP4066DPBF.pdf
IRGP4066DPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 454W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Power dissipation: 454W
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 75A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRGP4263DPBF IRGP4263DPBF.pdf
IRGP4263DPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 90A; 325W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Collector current: 90A
Type of transistor: IGBT
Power dissipation: 325W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRGS6B60KDPBF irgs6b60kdpbf.pdf
IRGS6B60KDPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 13A; 90W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 13A
Power dissipation: 90W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRGS6B60KDTRLP IRGS6B60KDTRLP.pdf
IRGS6B60KDTRLP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 13A; 90W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 13A
Power dissipation: 90W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRGSL4062DPBF irgs4062dpbf.pdf
IRGSL4062DPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 48A; 250W; TO262
Case: TO262
Mounting: THT
Kind of package: tube
Collector current: 48A
Power dissipation: 250W
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 600V
Type of transistor: IGBT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRL1004PBF irl1004pbf.pdf
IRL1004PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 108 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
25+2.92 EUR
35+ 2.06 EUR
37+ 1.94 EUR
500+ 1.9 EUR
Mindestbestellmenge: 25
IRL100HS121 IRL100HS121.pdf
IRL100HS121
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.8A; 5.8W; PQFN2X2
Mounting: SMD
Case: PQFN2X2
Drain-source voltage: 100V
Drain current: 7.8A
On-state resistance: 42mΩ
Type of transistor: N-MOSFET
Power dissipation: 5.8W
Polarisation: unipolar
Kind of package: reel
Gate charge: 3.7nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRL1404STRLPBF IRL1404STRLPBF.pdf
IRL1404STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 3.8W; D2PAK
Mounting: SMD
Kind of package: reel
Drain current: 160A
Type of transistor: N-MOSFET
Power dissipation: 3.8W
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhanced
Case: D2PAK
Drain-source voltage: 40V
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRL1404ZPBF irl1404zpbf.pdf
IRL1404ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 790A; 230W; TO220AB
Mounting: THT
Kind of package: tube
Drain current: 120A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 230W
Polarisation: unipolar
Features of semiconductor devices: logic level
Gate charge: 75nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 790A
Case: TO220AB
Drain-source voltage: 40V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 98 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
28+2.65 EUR
31+ 2.32 EUR
44+ 1.66 EUR
46+ 1.56 EUR
1000+ 1.5 EUR
Mindestbestellmenge: 28
IRL1404ZSTRLPBF irl1404xxPBF.pdf
IRL1404ZSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 790A; 230W; D2PAK
Mounting: SMD
Kind of package: reel
Drain current: 120A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 230W
Polarisation: unipolar
Features of semiconductor devices: logic level
Gate charge: 75nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 790A
Case: D2PAK
Drain-source voltage: 40V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 810 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
38+1.92 EUR
42+ 1.73 EUR
54+ 1.33 EUR
57+ 1.26 EUR
Mindestbestellmenge: 38
IRL2203NSTRLPBF irl2203nspbf.pdf
IRL2203NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 116A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 116A
Power dissipation: 170W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRL2505PBF description irl2505pbf.pdf
IRL2505PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 104A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 104A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
29+2.53 EUR
35+ 2.04 EUR
47+ 1.53 EUR
50+ 1.44 EUR
2000+ 1.4 EUR
Mindestbestellmenge: 29
IRL2505STRLPBF irl2505spbf.pdf?fileId=5546d462533600a40153565b75022502
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 74A; Idm: 360A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 74A
Pulsed drain current: 360A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRL2910STRLPBF irl2910spbf.pdf
IRL2910STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 55A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 55A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRL3103STRLPBF irl3103spbf.pdf
IRL3103STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 64A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRL3705NPBF description irl3705n.pdf
IRL3705NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 130W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 65.3nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1277 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
37+1.97 EUR
74+ 0.97 EUR
79+ 0.92 EUR
Mindestbestellmenge: 37
IRL3705NSTRLPBF irl3705nspbf.pdf
IRL3705NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 170W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRL3705ZPBF description irl3705z.pdf
IRL3705ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 130W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRL3705ZSTRLPBF IRL3705ZSTRLPBF.pdf
IRL3705ZSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 86A; 130W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 86A
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRL3803PBF description irl3803.pdf
IRL3803PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; 150W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 93.3nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
6+11.91 EUR
10+ 7.15 EUR
13+ 5.51 EUR
34+ 2.1 EUR
1000+ 1.26 EUR
Mindestbestellmenge: 6
IRL3803STRLPBF description irl3803spbf.pdf
IRL3803STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 140A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 140A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRL40B209 Infineon-IRL40B209-DS-v02_00-EN.pdf?fileId=5546d46256fb43b301576b16f39706f5
IRL40B209
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 293A; Idm: 1707A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 293A
Pulsed drain current: 1707A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.25mΩ
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRL40B212 IRL40B212.pdf
IRL40B212
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 179A; 231W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 179A
Power dissipation: 231W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRL40B215 IRL40B215.pdf
IRL40B215
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 116A; 143W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 116A
Power dissipation: 143W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRL520NPBF irl520n.pdf
IRL520NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 48W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 48W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 13.3nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRL530NSTRLPBF irl530nspbf.pdf
IRL530NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Power dissipation: 3.8W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 844 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
43+1.7 EUR
50+ 1.43 EUR
100+ 0.72 EUR
106+ 0.68 EUR
5600+ 0.65 EUR
Mindestbestellmenge: 43
IRL540NPBF irl540n.pdf
IRL540NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 49.3nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6592 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
59+1.22 EUR
70+ 1.04 EUR
134+ 0.53 EUR
142+ 0.51 EUR
5000+ 0.49 EUR
Mindestbestellmenge: 59
IRL540NSTRLPBF irl540nspbf.pdf
IRL540NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 803 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
33+2.17 EUR
38+ 1.89 EUR
76+ 0.94 EUR
80+ 0.9 EUR
Mindestbestellmenge: 33
IRL60B216 IRL60B216.pdf
IRL60B216
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 215A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 215A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: THT
Gate charge: 172nC
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRL60HS118 IRL60HS118.pdf
IRL60HS118
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; 5.8W; PQFN2X2
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 13A
Power dissipation: 5.8W
Case: PQFN2X2
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRL6342TRPBF irl6342pbf.pdf
IRL6342TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.9A; 2.5W; SO8
Mounting: SMD
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Case: SO8
Drain-source voltage: 30V
Drain current: 9.9A
On-state resistance: 14.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3451 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
146+0.49 EUR
175+ 0.41 EUR
202+ 0.35 EUR
213+ 0.34 EUR
4000+ 0.32 EUR
Mindestbestellmenge: 146
IRL6372TRPBF irl6372pbf.pdf
IRL6372TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.1A; 2.5W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.1A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 17.9mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 487 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
80+0.9 EUR
92+ 0.79 EUR
157+ 0.46 EUR
166+ 0.43 EUR
4000+ 0.41 EUR
Mindestbestellmenge: 80
IRL7833PBF irl7833pbf.pdf
IRL7833PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; TO220AB
Kind of package: tube
Drain-source voltage: 30V
Drain current: 150A
On-state resistance: 3.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Features of semiconductor devices: logic level
Gate charge: 32nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
Anzahl je Verpackung: 1 Stücke
auf Bestellung 74 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
33+2.2 EUR
41+ 1.76 EUR
57+ 1.27 EUR
60+ 1.2 EUR
Mindestbestellmenge: 33
IRL7833STRLPBF irl7833pbf.pdf
IRL7833STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; D2PAK
Kind of package: reel
Drain-source voltage: 30V
Drain current: 150A
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: D2PAK
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRL80HS120 IRL80HS120.pdf
IRL80HS120
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 9A; 5.8W; PQFN2X2
Mounting: SMD
Case: PQFN2X2
Drain-source voltage: 80V
Drain current: 9A
On-state resistance: 32mΩ
Type of transistor: N-MOSFET
Power dissipation: 5.8W
Polarisation: unipolar
Kind of package: reel
Gate charge: 4.7nC
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRLB3034PBF irlb3034pbf.pdf
IRLB3034PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 343A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 202 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
20+3.72 EUR
25+ 2.86 EUR
27+ 2.69 EUR
100+ 2.63 EUR
250+ 2.59 EUR
Mindestbestellmenge: 20
IRLB3036PBF irlb3036pbf.pdf
IRLB3036PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 95 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
15+4.95 EUR
21+ 3.52 EUR
22+ 3.32 EUR
Mindestbestellmenge: 15
IRLB3813PBF irlb3813pbf.pdf
IRLB3813PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 260A; 230W; TO220AB
Case: TO220AB
Drain-source voltage: 30V
Drain current: 260A
On-state resistance: 1.95mΩ
Type of transistor: N-MOSFET
Power dissipation: 230W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: logic level
Gate charge: 57nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 69 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
35+2.1 EUR
38+ 1.9 EUR
43+ 1.69 EUR
49+ 1.47 EUR
52+ 1.39 EUR
Mindestbestellmenge: 35
IRLB4030PBF irlb4030pbf.pdf
IRLB4030PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO220AB
Mounting: THT
Type of transistor: N-MOSFET
Power dissipation: 370W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: logic level
Gate charge: 87nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±16V
Case: TO220AB
Drain-source voltage: 100V
Drain current: 180A
On-state resistance: 4.3mΩ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 125 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
19+3.86 EUR
29+ 2.53 EUR
30+ 2.39 EUR
500+ 2.33 EUR
1000+ 2.29 EUR
Mindestbestellmenge: 19
IRLB4132PBF IRLB4132PbF.pdf
IRLB4132PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 620A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 620A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 163 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
67+1.07 EUR
99+ 0.73 EUR
112+ 0.64 EUR
129+ 0.56 EUR
136+ 0.53 EUR
Mindestbestellmenge: 67
IRLB8314PBF irlb8314pbf.pdf?fileId=5546d462533600a4015356604d6f258f
IRLB8314PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 664A; 125W; TO220AB
Drain-source voltage: 30V
Drain current: 120A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 664A
Mounting: THT
Case: TO220AB
Anzahl je Verpackung: 1 Stücke
auf Bestellung 78 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
61+1.19 EUR
72+ 1 EUR
78+ 0.92 EUR
84+ 0.86 EUR
5000+ 0.5 EUR
Mindestbestellmenge: 61
IRLB8721PBF description irlb8721pbf.pdf
IRLB8721PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 62A; 65W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 62A
Power dissipation: 65W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.7mΩ
Mounting: THT
Gate charge: 7.6nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2013 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
58+1.24 EUR
79+ 0.91 EUR
121+ 0.59 EUR
128+ 0.56 EUR
10000+ 0.55 EUR
Mindestbestellmenge: 58
IRLB8743PBF irlb8743pbf.pdf
IRLB8743PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 150A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 995 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
59+1.22 EUR
65+ 1.12 EUR
73+ 0.99 EUR
85+ 0.84 EUR
90+ 0.8 EUR
Mindestbestellmenge: 59
IRLB8748PBF irlb8748pbf.pdf
IRLB8748PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 92A; 75W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 92A
Power dissipation: 75W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 132 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
58+1.24 EUR
83+ 0.87 EUR
132+ 0.54 EUR
10000+ 0.47 EUR
Mindestbestellmenge: 58
IRLH5030TRPBF irlh5030pbf.pdf
IRLH5030TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRLH5034TRPBF irlh5034pbf.pdf
IRLH5034TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 29A; 3.6W; PQFN5X6
Mounting: SMD
Power dissipation: 3.6W
Polarisation: unipolar
Technology: HEXFET®
Features of semiconductor devices: logic level
Drain current: 29A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Case: PQFN5X6
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRLHM620TRPBF irlhm620pbf.pdf
IRLHM620TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 40A; 2.7W; PQFN3.3X3.3
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 40A
Power dissipation: 2.7W
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRLHM630TRPBF irlhm630pbf.pdf
IRLHM630TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.7W; PQFN3.3X3.3
Kind of package: reel
Technology: HEXFET®
Drain-source voltage: 30V
Drain current: 21A
Type of transistor: N-MOSFET
Power dissipation: 2.7W
Polarisation: unipolar
Features of semiconductor devices: logic level
Kind of channel: enhanced
Mounting: SMD
Case: PQFN3.3X3.3
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRLHS2242TRPBF irlhs2242pbf.pdf
IRLHS2242TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.2A; 2.1W; PQFN3.3X3.3
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhanced
Drain-source voltage: -20V
Drain current: -7.2A
Type of transistor: P-MOSFET
Power dissipation: 2.1W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3894 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
162+0.44 EUR
218+ 0.33 EUR
332+ 0.22 EUR
350+ 0.2 EUR
Mindestbestellmenge: 162
IRLHS6242TRPBF irlhs6242pbf.pdf
IRLHS6242TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 10A; 1.98W; PQFN2X2
Mounting: SMD
Power dissipation: 1.98W
Polarisation: unipolar
Kind of package: reel
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhanced
Case: PQFN2X2
Drain-source voltage: 20V
Drain current: 10A
Type of transistor: N-MOSFET
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRLHS6276TRPBF irlhs6276pbf.pdf
IRLHS6276TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 12A; 4.5W; PQFN2X2
Kind of package: reel
Drain-source voltage: 20V
Drain current: 12A
Type of transistor: N-MOSFET x2
Power dissipation: 4.5W
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: PQFN2X2
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRFHM6342TR2PBF irlhs6342pbf.pdf
IRFHM6342TR2PBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.1W; PQFN2X2
Mounting: SMD
Case: PQFN2X2
Power dissipation: 2.1W
Polarisation: unipolar
Type of transistor: N-MOSFET
Drain current: 8.5A
Drain-source voltage: 30V
Features of semiconductor devices: logic level
Gate charge: 11nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
On-state resistance: 15.5mΩ
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
IRLHS6376TRPBF irlhs6376pbf.pdf
IRLHS6376TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; 1.5W; PQFN2X2
Case: PQFN2X2
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhanced
Drain-source voltage: 30V
Drain current: 3.6A
Type of transistor: N-MOSFET
Power dissipation: 1.5W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3874 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
179+0.4 EUR
199+ 0.36 EUR
260+ 0.28 EUR
275+ 0.26 EUR
Mindestbestellmenge: 179
IRLL014NTRPBF description irll014npbf.pdf
IRLL014NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 2A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 2A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2186 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
95+0.76 EUR
105+ 0.68 EUR
131+ 0.55 EUR
260+ 0.28 EUR
275+ 0.26 EUR
Mindestbestellmenge: 95
IRLL024NTRPBF description irll024n.pdf
IRLL024NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.4A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4.4A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 10.4nC
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2958 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
77+0.93 EUR
203+ 0.35 EUR
215+ 0.33 EUR
7500+ 0.32 EUR
Mindestbestellmenge: 77
IRLL024ZTRPBF irll024zpbf.pdf
IRLL024ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4A; Idm: 40A; 1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4A
Pulsed drain current: 40A
Power dissipation: 1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2672 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
40+1.8 EUR
92+ 0.78 EUR
102+ 0.7 EUR
133+ 0.54 EUR
141+ 0.51 EUR
Mindestbestellmenge: 40
IRLL2703TRPBF IRSDS06555-1.pdf?t.download=true&u=5oefqw
IRLL2703TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 16A; 1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.1A
Pulsed drain current: 16A
Power dissipation: 1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 45mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
IRLL2705TRPBF irll2705pbf.pdf
IRLL2705TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.8A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 3.8A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3002 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
70+1.03 EUR
82+ 0.87 EUR
159+ 0.45 EUR
168+ 0.43 EUR
5000+ 0.41 EUR
Mindestbestellmenge: 70
IRLML0030TRPBF irlml0030pbf.pdf
IRLML0030TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.3A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8798 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
173+0.41 EUR
247+ 0.29 EUR
307+ 0.23 EUR
410+ 0.17 EUR
596+ 0.12 EUR
633+ 0.11 EUR
Mindestbestellmenge: 173
Wählen Sie Seite:   [  << Vorherige Seite ]  1 232 464 696 928 1160 1239 1240 1241 1242 1243 1244 1245 1246 1247 1248 1249 1392 1624 1856 2088 2320 2325  [ Nächste Seite >> ]