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SPD15P10PLGBTMA1 SPD15P10PLGBTMA1 INFINEON TECHNOLOGIES SPD15P10PLGBTMA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Power dissipation: 128W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2257 Stücke:
Lieferzeit 7-14 Tag (e)
40+1.8 EUR
45+ 1.6 EUR
50+ 1.43 EUR
53+ 1.36 EUR
100+ 1.33 EUR
Mindestbestellmenge: 40
SPD18P06PGBTMA1 SPD18P06PGBTMA1 INFINEON TECHNOLOGIES SPD18P06PGBTMA1-DTE.PDF Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.6A; 80W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18.6A
Power dissipation: 80W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2446 Stücke:
Lieferzeit 7-14 Tag (e)
52+1.4 EUR
56+ 1.29 EUR
73+ 0.99 EUR
77+ 0.93 EUR
2500+ 0.9 EUR
Mindestbestellmenge: 52
SPD30P06PGBTMA1 SPD30P06PGBTMA1 INFINEON TECHNOLOGIES SPD30P06PGBTMA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -30A; 125W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -30A
Power dissipation: 125W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2174 Stücke:
Lieferzeit 7-14 Tag (e)
37+1.94 EUR
41+ 1.76 EUR
54+ 1.33 EUR
57+ 1.26 EUR
Mindestbestellmenge: 37
SPD50N03S207GBTMA1 SPD50N03S207GBTMA1 INFINEON TECHNOLOGIES SPD50N03S207G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 136W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1477 Stücke:
Lieferzeit 7-14 Tag (e)
65+1.12 EUR
72+ 1 EUR
76+ 0.94 EUR
81+ 0.89 EUR
100+ 0.87 EUR
500+ 0.86 EUR
Mindestbestellmenge: 65
SPD50P03LGBTMA1 SPD50P03LGBTMA1 INFINEON TECHNOLOGIES SPD50P03LGBTMA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; 150W; PG-TO252-5
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Power dissipation: 150W
Case: PG-TO252-5
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SPP04N80C3 SPP04N80C3 INFINEON TECHNOLOGIES SPP04N80C3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 486 Stücke:
Lieferzeit 7-14 Tag (e)
33+2.2 EUR
37+ 1.96 EUR
43+ 1.7 EUR
45+ 1.6 EUR
250+ 1.54 EUR
Mindestbestellmenge: 33
SPP06N80C3 SPP06N80C3 INFINEON TECHNOLOGIES SPP06N80C3.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)
19+3.76 EUR
22+ 3.25 EUR
250+ 2 EUR
Mindestbestellmenge: 19
SPP07N60C3 SPP07N60C3 INFINEON TECHNOLOGIES SPx07N60C3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.6A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.6A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SPP08N80C3 SPP08N80C3 INFINEON TECHNOLOGIES Infineon-SPP08N80C3-DS-v02_91-en.pdf?fileId=db3a30432313ff5e0123a905a6005c8a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 493 Stücke:
Lieferzeit 7-14 Tag (e)
22+3.37 EUR
25+ 2.96 EUR
28+ 2.56 EUR
30+ 2.42 EUR
Mindestbestellmenge: 22
SPP11N60C3XKSA1 SPP11N60C3XKSA1 INFINEON TECHNOLOGIES SPP_I_A11N60C3_E8185_Rev[1].3.1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a3043163797a6011638a2fdee01a3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 125W; PG-TO220
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 33A
Power dissipation: 125W
Case: PG-TO220
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 101 Stücke:
Lieferzeit 7-14 Tag (e)
19+3.92 EUR
41+ 1.76 EUR
44+ 1.66 EUR
Mindestbestellmenge: 19
SPP11N80C3 SPP11N80C3 INFINEON TECHNOLOGIES SPP11N80C3-dte.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 156W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 156W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 201 Stücke:
Lieferzeit 7-14 Tag (e)
24+3.03 EUR
27+ 2.72 EUR
31+ 2.35 EUR
33+ 2.22 EUR
50+ 2.16 EUR
250+ 2.13 EUR
Mindestbestellmenge: 24
SPP15P10PLHXKSA1 SPP15P10PLHXKSA1 INFINEON TECHNOLOGIES SPP15P10PLHXKSA1-DTE.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Drain current: -15A
Drain-source voltage: -100V
Power dissipation: 128W
Polarisation: unipolar
Kind of package: tube
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
On-state resistance: 0.2Ω
Anzahl je Verpackung: 1 Stücke
auf Bestellung 86 Stücke:
Lieferzeit 7-14 Tag (e)
25+2.92 EUR
50+ 1.44 EUR
66+ 1.09 EUR
70+ 1.03 EUR
1000+ 0.99 EUR
Mindestbestellmenge: 25
SPP17N80C3 SPP17N80C3 INFINEON TECHNOLOGIES description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 48 Stücke:
Lieferzeit 7-14 Tag (e)
19+3.83 EUR
21+ 3.45 EUR
22+ 3.35 EUR
23+ 3.16 EUR
50+ 3.02 EUR
Mindestbestellmenge: 19
SPP18P06PHXKSA1 SPP18P06PHXKSA1 INFINEON TECHNOLOGIES SPP18P06PHXKSA1-DTE.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.7A; 81.1W; PG-TO220-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18.7A
Power dissipation: 81.1W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 21 Stücke:
Lieferzeit 7-14 Tag (e)
21+3.4 EUR
38+ 1.89 EUR
Mindestbestellmenge: 21
SPP20N60C3 SPP20N60C3 INFINEON TECHNOLOGIES spp20n60c3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.7A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.7A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 380 Stücke:
Lieferzeit 7-14 Tag (e)
19+3.86 EUR
22+ 3.4 EUR
24+ 3.06 EUR
25+ 2.9 EUR
50+ 2.86 EUR
100+ 2.79 EUR
Mindestbestellmenge: 19
SPP20N60CFD SPP20N60CFD INFINEON TECHNOLOGIES SPP20N60CFD.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SPP20N60S5 SPP20N60S5 INFINEON TECHNOLOGIES SPP20N60S5.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 72 Stücke:
Lieferzeit 7-14 Tag (e)
8+9.51 EUR
11+ 6.59 EUR
12+ 6.23 EUR
Mindestbestellmenge: 8
SPP20N65C3 SPP20N65C3 INFINEON TECHNOLOGIES SPx20N65C3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.1A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.65 EUR
12+ 5.96 EUR
Mindestbestellmenge: 10
SPP21N50C3 SPP21N50C3 INFINEON TECHNOLOGIES SPx21N50C3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 560V; 13.1A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 560V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 46 Stücke:
Lieferzeit 7-14 Tag (e)
11+7.14 EUR
12+ 6.42 EUR
15+ 4.9 EUR
16+ 4.65 EUR
Mindestbestellmenge: 11
SPP24N60C3 SPP24N60C3 INFINEON TECHNOLOGIES SPP24N60C3.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15.4A; 240W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.4A
Power dissipation: 240W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SPP80P06PHXKSA1 SPP80P06PHXKSA1 INFINEON TECHNOLOGIES SPP80P06PHXKSA1-DTE.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -80A; 340W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Drain-source voltage: -60V
Drain current: -80A
On-state resistance: 23mΩ
Type of transistor: P-MOSFET
Power dissipation: 340W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
17+4.32 EUR
20+ 3.58 EUR
Mindestbestellmenge: 17
SPU03N60C3BKMA1 SPU03N60C3BKMA1 INFINEON TECHNOLOGIES SP_03N60C3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; TO251
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 9.6A
Power dissipation: 38W
Case: TO251
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 2nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 974 Stücke:
Lieferzeit 7-14 Tag (e)
67+1.07 EUR
76+ 0.95 EUR
87+ 0.83 EUR
91+ 0.79 EUR
525+ 0.75 EUR
Mindestbestellmenge: 67
SPW11N80C3 SPW11N80C3 INFINEON TECHNOLOGIES SPW11N80C3-DTE.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.1A; 156W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.1A
Power dissipation: 156W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SPW17N80C3 SPW17N80C3 INFINEON TECHNOLOGIES SPW17N80C3.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 227W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 223 Stücke:
Lieferzeit 7-14 Tag (e)
9+8.28 EUR
12+ 6.01 EUR
13+ 5.69 EUR
Mindestbestellmenge: 9
SPW20N60C3 SPW20N60C3 INFINEON TECHNOLOGIES SPW20N60C3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SPW20N60S5 SPW20N60S5 INFINEON TECHNOLOGIES SPW20N60S5.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
9+8.74 EUR
12+ 6.02 EUR
13+ 5.69 EUR
Mindestbestellmenge: 9
SPW35N60C3 SPW35N60C3 INFINEON TECHNOLOGIES SPW35N60C3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21.9A; 313W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21.9A
Power dissipation: 313W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)
6+12.97 EUR
7+ 10.72 EUR
30+ 10.31 EUR
Mindestbestellmenge: 6
SPW35N60CFD SPW35N60CFD INFINEON TECHNOLOGIES SPW35N60CFD.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21.6A; 313W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21.6A
Power dissipation: 313W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.118Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SPW47N60C3 SPW47N60C3 INFINEON TECHNOLOGIES SPW47N60C3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 47A; 415W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Power dissipation: 415W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 112 Stücke:
Lieferzeit 7-14 Tag (e)
4+21.05 EUR
5+ 14.41 EUR
Mindestbestellmenge: 4
SPW47N60CFDFKSA1 SPW47N60CFDFKSA1 INFINEON TECHNOLOGIES SPW47N60CFD.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; 417W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29A
Power dissipation: 417W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 83mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SPW47N65C3FKSA1 SPW47N65C3FKSA1 INFINEON TECHNOLOGIES SPW47N65C3F.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; 415W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 415W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SPW55N80C3FKSA1 INFINEON TECHNOLOGIES Infineon-SPW55N80C3-DS-v02_00-en.pdf?fileId=db3a3043337a914d0133878821c910bb Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 34.7A; Idm: 150A; 500W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 34.7A
Pulsed drain current: 150A
Power dissipation: 500W
Case: PG-TO247
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STT1400N16P55XPSA1 INFINEON TECHNOLOGIES Infineon-STT1400N16P55-DS-v03_01-EN.pdf?fileId=5546d4625fe36784015ffc220d0b1754 STT1400N16P55 Thyristor modules
Produkt ist nicht verfügbar
STT1400N18P55XPSA1 INFINEON TECHNOLOGIES Infineon-STT1400N18P55-DataSheet-v03_01-EN.pdf?fileId=5546d46272aa54c00172bc99a9775672 STT1400N18P55XPSA1 Thyristor modules
Produkt ist nicht verfügbar
STT1900N16P55XPSA1 INFINEON TECHNOLOGIES Infineon-STT1900N16P55-DS-v03_01-EN.pdf?fileId=5546d4625f96303e015fd95f11276e7a STT1900N16P55 Thyristor modules
Produkt ist nicht verfügbar
STT1900N18P55XPSA1 INFINEON TECHNOLOGIES Infineon-STT1900N18P55-DataSheet-v01_00-EN.pdf?fileId=5546d46272aa54c00172bc999c30566f STT1900N18P55XPSA1 Thyristor modules
Produkt ist nicht verfügbar
STT2200N16P55XPSA1 INFINEON TECHNOLOGIES STT2200N16P55.pdf Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 2.2kA; BG-PS55-1; Ufmax: 1.38V
Type of module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.6kV
Load current: 2.2kA
Case: BG-PS55-1
Max. forward voltage: 1.38V
Max. forward impulse current: 17.5kA
Gate current: 200mA
Electrical mounting: screw
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STT2200N18P55XPSA1 INFINEON TECHNOLOGIES STT2200N18P55.pdf Category: Thyristor modules
Description: Module: thyristor; opposing; 1.8kV; 2.18kA; BG-PS55-1; Ufmax: 1.38V
Type of module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.8kV
Load current: 2.18kA
Case: BG-PS55-1
Max. forward voltage: 1.38V
Max. forward impulse current: 17.5kA
Gate current: 200mA
Electrical mounting: screw
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STT3300N16P76XPSA1 INFINEON TECHNOLOGIES Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 3.3kA; BG-PS55-1; screw; screw
Mechanical mounting: screw
Electrical mounting: screw
Type of module: thyristor
Case: BG-PS55-1
Max. off-state voltage: 1.6kV
Load current: 3.3kA
Semiconductor structure: opposing
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STT3300N18P76XPSA1 INFINEON TECHNOLOGIES STT3300N18P76XPSA1 Thyristor modules
Produkt ist nicht verfügbar
STT800N16P55XPSA1 INFINEON TECHNOLOGIES STT800N16P55.pdf Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 800A; BG-PS55-1; Ufmax: 1.56V
Max. forward voltage: 1.56V
Load current: 800A
Semiconductor structure: opposing
Gate current: 200mA
Max. forward impulse current: 5.4kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Case: BG-PS55-1
Max. off-state voltage: 1.6kV
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
T1190N16TOFVTXPSA1 INFINEON TECHNOLOGIES T1190N_ser.pdf Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 2.8kA; 1.19kA; Igt: 250mA
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Mounting: Press-Pack
Case: BG-T7526K-1
Max. off-state voltage: 1.6kV
Max. load current: 2.8kA
Load current: 1.19kA
Gate current: 250mA
Max. forward impulse current: 22.5kA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
T1590N28TOFVTXPSA1 INFINEON TECHNOLOGIES Infineon-T1590N-DS-v02_00-en_de.pdf?fileId=db3a304323b87bc2012409cf7bc2474b Category: Button thyristors
Description: Thyristor: hockey-puck; 2.8kV; Ifmax: 3.2kA; 1.59kA; Igt: 300mA
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Mounting: Press-Pack
Case: BG-T10026K-1
Max. off-state voltage: 2.8kV
Max. load current: 3.2kA
Load current: 1.59kA
Gate current: 300mA
Max. forward impulse current: 32kA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
T1901N80TOHXPSA1 INFINEON TECHNOLOGIES T1901N.pdf Category: Button thyristors
Description: Thyristor: hockey-puck; 8kV; Ifmax: 3.3kA; 2.1kA; Igt: 350mA
Case: BG-T15035K-1
Mounting: Press-Pack
Kind of package: in-tray
Max. off-state voltage: 8kV
Features of semiconductor devices: phase controlled thyristor (PCT)
Gate current: 350mA
Max. forward impulse current: 67kA
Load current: 2.1kA
Max. load current: 3.3kA
Type of thyristor: hockey-puck
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
T3160N16TOFVTXPSA1 INFINEON TECHNOLOGIES T3160N.pdf Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 7kA; 3.16kA; Igt: 250mA
Mounting: Press-Pack
Kind of package: in-tray
Case: BG-T11126K-1
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Max. off-state voltage: 1.6kV
Max. load current: 7kA
Load current: 3.16kA
Gate current: 250mA
Max. forward impulse current: 63kA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
T3160N18TOFVTXPSA1 INFINEON TECHNOLOGIES T3160N.pdf Category: Button thyristors
Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 7kA; 3.16kA; Igt: 250mA
Max. off-state voltage: 1.8kV
Load current: 3.16kA
Max. load current: 7kA
Case: BG-T11126K-1
Max. forward impulse current: 63kA
Gate current: 250mA
Mounting: Press-Pack
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
T360N22TOFXPSA1 INFINEON TECHNOLOGIES Category: Button thyristors
Description: Thyristor: hockey-puck; 2.2kV; Ifmax: 550A; 360A; Igt: 200mA
Type of thyristor: hockey-puck
Max. off-state voltage: 2.2kV
Max. load current: 550A
Load current: 360A
Gate current: 200mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 5kA
Features of semiconductor devices: phase controlled thyristor (PCT)
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
T390N16TOFXPSA1 INFINEON TECHNOLOGIES Infineon-T390N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd80128636b9b085316 Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 600A; 381A; Igt: 150mA
Type of thyristor: hockey-puck
Max. off-state voltage: 1.6kV
Max. load current: 600A
Load current: 381A
Gate current: 150mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 4.9kA
Features of semiconductor devices: phase controlled thyristor (PCT)
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
T420N16TOFXPSA1 INFINEON TECHNOLOGIES Infineon-T420N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd80128637bdb055339 Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 750A; 424A; Igt: 200mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Max. off-state voltage: 1.6kV
Max. load current: 750A
Load current: 424A
Gate current: 200mA
Max. forward impulse current: 7.2kA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
T430N12TOFXPSA1 INFINEON TECHNOLOGIES T430N.pdf Category: Button thyristors
Description: Thyristor: hockey-puck; 1.2kV; Ifmax: 700A; 433A; Igt: 200mA
Kind of package: in-tray
Max. forward impulse current: 5.2kA
Gate current: 200mA
Load current: 433A
Max. load current: 700A
Max. off-state voltage: 1.2kV
Features of semiconductor devices: phase controlled thyristor (PCT)
Case: BG-T4214K0-1
Mounting: Press-Pack
Type of thyristor: hockey-puck
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
T501N70TOHXPSA1 INFINEON TECHNOLOGIES Infineon-T501N-DS-v11_00-en_de.pdf?fileId=db3a304412b407950112b4304de2500a T501N70TOHXPSA1 Button thyristors
Produkt ist nicht verfügbar
T560N14TOFXPSA1 INFINEON TECHNOLOGIES T560N.pdf Category: Button thyristors
Description: Thyristor: hockey-puck; 1.4kV; Ifmax: 809A; 559A; Igt: 200mA
Type of thyristor: hockey-puck
Max. off-state voltage: 1.4kV
Max. load current: 809A
Load current: 559A
Gate current: 200mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 8kA
Features of semiconductor devices: phase controlled thyristor (PCT)
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
T560N16TOFXPSA1 INFINEON TECHNOLOGIES T560N.pdf Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 809A; 559A; Igt: 200mA
Type of thyristor: hockey-puck
Max. off-state voltage: 1.6kV
Max. load current: 809A
Load current: 559A
Gate current: 200mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 8kA
Features of semiconductor devices: phase controlled thyristor (PCT)
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
T560N18TOFXPSA1 INFINEON TECHNOLOGIES T560N.pdf Category: Button thyristors
Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 809A; 559A; Igt: 200mA
Type of thyristor: hockey-puck
Max. off-state voltage: 1.8kV
Max. load current: 809A
Load current: 559A
Gate current: 200mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 8kA
Features of semiconductor devices: phase controlled thyristor (PCT)
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
T590N14TOFXPSA1 INFINEON TECHNOLOGIES T590N.pdf Category: Button thyristors
Description: Thyristor: hockey-puck; 1.4kV; Ifmax: 1.25kA; 590A; Igt: 250mA
Max. off-state voltage: 1.4kV
Load current: 590A
Case: BG-T5726K-1
Max. forward impulse current: 9.4kA
Gate current: 250mA
Mounting: Press-Pack
Max. load current: 1.25kA
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
T590N18TOFXPSA1 INFINEON TECHNOLOGIES T590N.pdf Category: Button thyristors
Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 1.25kA; 590A; Igt: 250mA
Max. off-state voltage: 1.8kV
Load current: 590A
Case: BG-T5726K-1
Max. forward impulse current: 9.4kA
Gate current: 250mA
Mounting: Press-Pack
Max. load current: 1.25kA
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
T640N12TOFXPSA1 INFINEON TECHNOLOGIES T640Nxx.pdf Category: Button thyristors
Description: Thyristor: hockey-puck; 1.2kV; Ifmax: 1.25kA; 644A; Igt: 250mA
Max. off-state voltage: 1.2kV
Load current: 644A
Case: BG-T4814K0-1
Max. forward impulse current: 9.4kA
Gate current: 250mA
Mounting: Press-Pack
Max. load current: 1.25kA
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
T720N16TOFXPSA1 INFINEON TECHNOLOGIES T720N16TOF.pdf Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 1.65kA; 720A; Igt: 250mA
Case: BG-T7526K-1
Mounting: Press-Pack
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Max. off-state voltage: 1.6kV
Max. load current: 1.65kA
Load current: 720A
Gate current: 250mA
Max. forward impulse current: 12.5kA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
T740N26TOFXPSA1 INFINEON TECHNOLOGIES T740N_ser.pdf Category: Button thyristors
Description: Thyristor: hockey-puck; 2.6kV; Ifmax: 1.5A; 745A; Igt: 250mA
Type of thyristor: hockey-puck
Max. off-state voltage: 2.6kV
Max. load current: 1.5A
Load current: 745A
Gate current: 250mA
Case: BG-T5814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 13kA
Features of semiconductor devices: phase controlled thyristor (PCT)
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
T830N12TOFXPSA1 INFINEON TECHNOLOGIES T830N.pdf Category: Button thyristors
Description: Thyristor: hockey-puck; 1.2kV; Ifmax: 1.5kA; 844A; Igt: 250mA
Max. off-state voltage: 1.2kV
Load current: 844A
Case: BG-T5814K0-1
Max. forward impulse current: 14.5A
Gate current: 250mA
Mounting: Press-Pack
Max. load current: 1.5kA
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SPD15P10PLGBTMA1 SPD15P10PLGBTMA1-DTE.pdf
SPD15P10PLGBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Power dissipation: 128W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2257 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
40+1.8 EUR
45+ 1.6 EUR
50+ 1.43 EUR
53+ 1.36 EUR
100+ 1.33 EUR
Mindestbestellmenge: 40
SPD18P06PGBTMA1 SPD18P06PGBTMA1-DTE.PDF
SPD18P06PGBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.6A; 80W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18.6A
Power dissipation: 80W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2446 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
52+1.4 EUR
56+ 1.29 EUR
73+ 0.99 EUR
77+ 0.93 EUR
2500+ 0.9 EUR
Mindestbestellmenge: 52
SPD30P06PGBTMA1 SPD30P06PGBTMA1-DTE.pdf
SPD30P06PGBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -30A; 125W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -30A
Power dissipation: 125W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2174 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
37+1.94 EUR
41+ 1.76 EUR
54+ 1.33 EUR
57+ 1.26 EUR
Mindestbestellmenge: 37
SPD50N03S207GBTMA1 SPD50N03S207G-DTE.pdf
SPD50N03S207GBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 136W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1477 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
65+1.12 EUR
72+ 1 EUR
76+ 0.94 EUR
81+ 0.89 EUR
100+ 0.87 EUR
500+ 0.86 EUR
Mindestbestellmenge: 65
SPD50P03LGBTMA1 SPD50P03LGBTMA1-DTE.pdf
SPD50P03LGBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; 150W; PG-TO252-5
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Power dissipation: 150W
Case: PG-TO252-5
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SPP04N80C3 SPP04N80C3.pdf
SPP04N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 486 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
33+2.2 EUR
37+ 1.96 EUR
43+ 1.7 EUR
45+ 1.6 EUR
250+ 1.54 EUR
Mindestbestellmenge: 33
SPP06N80C3 description SPP06N80C3.pdf
SPP06N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
19+3.76 EUR
22+ 3.25 EUR
250+ 2 EUR
Mindestbestellmenge: 19
SPP07N60C3 SPx07N60C3.pdf
SPP07N60C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.6A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.6A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SPP08N80C3 Infineon-SPP08N80C3-DS-v02_91-en.pdf?fileId=db3a30432313ff5e0123a905a6005c8a
SPP08N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 493 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
22+3.37 EUR
25+ 2.96 EUR
28+ 2.56 EUR
30+ 2.42 EUR
Mindestbestellmenge: 22
SPP11N60C3XKSA1 SPP_I_A11N60C3_E8185_Rev[1].3.1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a3043163797a6011638a2fdee01a3
SPP11N60C3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 125W; PG-TO220
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 33A
Power dissipation: 125W
Case: PG-TO220
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 101 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
19+3.92 EUR
41+ 1.76 EUR
44+ 1.66 EUR
Mindestbestellmenge: 19
SPP11N80C3 SPP11N80C3-dte.pdf
SPP11N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 156W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 156W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 201 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
24+3.03 EUR
27+ 2.72 EUR
31+ 2.35 EUR
33+ 2.22 EUR
50+ 2.16 EUR
250+ 2.13 EUR
Mindestbestellmenge: 24
SPP15P10PLHXKSA1 SPP15P10PLHXKSA1-DTE.pdf
SPP15P10PLHXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Drain current: -15A
Drain-source voltage: -100V
Power dissipation: 128W
Polarisation: unipolar
Kind of package: tube
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: P-MOSFET
On-state resistance: 0.2Ω
Anzahl je Verpackung: 1 Stücke
auf Bestellung 86 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
25+2.92 EUR
50+ 1.44 EUR
66+ 1.09 EUR
70+ 1.03 EUR
1000+ 0.99 EUR
Mindestbestellmenge: 25
SPP17N80C3 description
SPP17N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 48 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
19+3.83 EUR
21+ 3.45 EUR
22+ 3.35 EUR
23+ 3.16 EUR
50+ 3.02 EUR
Mindestbestellmenge: 19
SPP18P06PHXKSA1 SPP18P06PHXKSA1-DTE.pdf
SPP18P06PHXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.7A; 81.1W; PG-TO220-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18.7A
Power dissipation: 81.1W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 21 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
21+3.4 EUR
38+ 1.89 EUR
Mindestbestellmenge: 21
SPP20N60C3 spp20n60c3.pdf
SPP20N60C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.7A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.7A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 380 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
19+3.86 EUR
22+ 3.4 EUR
24+ 3.06 EUR
25+ 2.9 EUR
50+ 2.86 EUR
100+ 2.79 EUR
Mindestbestellmenge: 19
SPP20N60CFD SPP20N60CFD.pdf
SPP20N60CFD
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SPP20N60S5 description SPP20N60S5.pdf
SPP20N60S5
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 72 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
8+9.51 EUR
11+ 6.59 EUR
12+ 6.23 EUR
Mindestbestellmenge: 8
SPP20N65C3 SPx20N65C3.pdf
SPP20N65C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.1A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
10+7.65 EUR
12+ 5.96 EUR
Mindestbestellmenge: 10
SPP21N50C3 SPx21N50C3.pdf
SPP21N50C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 560V; 13.1A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 560V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 46 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
11+7.14 EUR
12+ 6.42 EUR
15+ 4.9 EUR
16+ 4.65 EUR
Mindestbestellmenge: 11
SPP24N60C3 description SPP24N60C3.pdf
SPP24N60C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15.4A; 240W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.4A
Power dissipation: 240W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SPP80P06PHXKSA1 SPP80P06PHXKSA1-DTE.pdf
SPP80P06PHXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -80A; 340W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Drain-source voltage: -60V
Drain current: -80A
On-state resistance: 23mΩ
Type of transistor: P-MOSFET
Power dissipation: 340W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
17+4.32 EUR
20+ 3.58 EUR
Mindestbestellmenge: 17
SPU03N60C3BKMA1 SP_03N60C3.pdf
SPU03N60C3BKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; TO251
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 9.6A
Power dissipation: 38W
Case: TO251
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 2nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 974 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
67+1.07 EUR
76+ 0.95 EUR
87+ 0.83 EUR
91+ 0.79 EUR
525+ 0.75 EUR
Mindestbestellmenge: 67
SPW11N80C3 description SPW11N80C3-DTE.pdf
SPW11N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.1A; 156W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.1A
Power dissipation: 156W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SPW17N80C3 description SPW17N80C3.pdf
SPW17N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 227W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 223 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
9+8.28 EUR
12+ 6.01 EUR
13+ 5.69 EUR
Mindestbestellmenge: 9
SPW20N60C3 SPW20N60C3.pdf
SPW20N60C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SPW20N60S5 description SPW20N60S5.pdf
SPW20N60S5
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
9+8.74 EUR
12+ 6.02 EUR
13+ 5.69 EUR
Mindestbestellmenge: 9
SPW35N60C3 SPW35N60C3.pdf
SPW35N60C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21.9A; 313W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21.9A
Power dissipation: 313W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
6+12.97 EUR
7+ 10.72 EUR
30+ 10.31 EUR
Mindestbestellmenge: 6
SPW35N60CFD SPW35N60CFD.pdf
SPW35N60CFD
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21.6A; 313W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21.6A
Power dissipation: 313W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.118Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SPW47N60C3 SPW47N60C3.pdf
SPW47N60C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 47A; 415W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Power dissipation: 415W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 112 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
4+21.05 EUR
5+ 14.41 EUR
Mindestbestellmenge: 4
SPW47N60CFDFKSA1 SPW47N60CFD.pdf
SPW47N60CFDFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; 417W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29A
Power dissipation: 417W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 83mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SPW47N65C3FKSA1 SPW47N65C3F.pdf
SPW47N65C3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; 415W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 415W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SPW55N80C3FKSA1 Infineon-SPW55N80C3-DS-v02_00-en.pdf?fileId=db3a3043337a914d0133878821c910bb
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 34.7A; Idm: 150A; 500W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 34.7A
Pulsed drain current: 150A
Power dissipation: 500W
Case: PG-TO247
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STT1400N16P55XPSA1 Infineon-STT1400N16P55-DS-v03_01-EN.pdf?fileId=5546d4625fe36784015ffc220d0b1754
Hersteller: INFINEON TECHNOLOGIES
STT1400N16P55 Thyristor modules
Produkt ist nicht verfügbar
STT1400N18P55XPSA1 Infineon-STT1400N18P55-DataSheet-v03_01-EN.pdf?fileId=5546d46272aa54c00172bc99a9775672
Hersteller: INFINEON TECHNOLOGIES
STT1400N18P55XPSA1 Thyristor modules
Produkt ist nicht verfügbar
STT1900N16P55XPSA1 Infineon-STT1900N16P55-DS-v03_01-EN.pdf?fileId=5546d4625f96303e015fd95f11276e7a
Hersteller: INFINEON TECHNOLOGIES
STT1900N16P55 Thyristor modules
Produkt ist nicht verfügbar
STT1900N18P55XPSA1 Infineon-STT1900N18P55-DataSheet-v01_00-EN.pdf?fileId=5546d46272aa54c00172bc999c30566f
Hersteller: INFINEON TECHNOLOGIES
STT1900N18P55XPSA1 Thyristor modules
Produkt ist nicht verfügbar
STT2200N16P55XPSA1 STT2200N16P55.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 2.2kA; BG-PS55-1; Ufmax: 1.38V
Type of module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.6kV
Load current: 2.2kA
Case: BG-PS55-1
Max. forward voltage: 1.38V
Max. forward impulse current: 17.5kA
Gate current: 200mA
Electrical mounting: screw
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STT2200N18P55XPSA1 STT2200N18P55.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.8kV; 2.18kA; BG-PS55-1; Ufmax: 1.38V
Type of module: thyristor
Semiconductor structure: opposing
Max. off-state voltage: 1.8kV
Load current: 2.18kA
Case: BG-PS55-1
Max. forward voltage: 1.38V
Max. forward impulse current: 17.5kA
Gate current: 200mA
Electrical mounting: screw
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STT3300N16P76XPSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 3.3kA; BG-PS55-1; screw; screw
Mechanical mounting: screw
Electrical mounting: screw
Type of module: thyristor
Case: BG-PS55-1
Max. off-state voltage: 1.6kV
Load current: 3.3kA
Semiconductor structure: opposing
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STT3300N18P76XPSA1
Hersteller: INFINEON TECHNOLOGIES
STT3300N18P76XPSA1 Thyristor modules
Produkt ist nicht verfügbar
STT800N16P55XPSA1 STT800N16P55.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 800A; BG-PS55-1; Ufmax: 1.56V
Max. forward voltage: 1.56V
Load current: 800A
Semiconductor structure: opposing
Gate current: 200mA
Max. forward impulse current: 5.4kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Case: BG-PS55-1
Max. off-state voltage: 1.6kV
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
T1190N16TOFVTXPSA1 T1190N_ser.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 2.8kA; 1.19kA; Igt: 250mA
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Mounting: Press-Pack
Case: BG-T7526K-1
Max. off-state voltage: 1.6kV
Max. load current: 2.8kA
Load current: 1.19kA
Gate current: 250mA
Max. forward impulse current: 22.5kA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
T1590N28TOFVTXPSA1 Infineon-T1590N-DS-v02_00-en_de.pdf?fileId=db3a304323b87bc2012409cf7bc2474b
Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 2.8kV; Ifmax: 3.2kA; 1.59kA; Igt: 300mA
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Mounting: Press-Pack
Case: BG-T10026K-1
Max. off-state voltage: 2.8kV
Max. load current: 3.2kA
Load current: 1.59kA
Gate current: 300mA
Max. forward impulse current: 32kA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
T1901N80TOHXPSA1 T1901N.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 8kV; Ifmax: 3.3kA; 2.1kA; Igt: 350mA
Case: BG-T15035K-1
Mounting: Press-Pack
Kind of package: in-tray
Max. off-state voltage: 8kV
Features of semiconductor devices: phase controlled thyristor (PCT)
Gate current: 350mA
Max. forward impulse current: 67kA
Load current: 2.1kA
Max. load current: 3.3kA
Type of thyristor: hockey-puck
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
T3160N16TOFVTXPSA1 T3160N.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 7kA; 3.16kA; Igt: 250mA
Mounting: Press-Pack
Kind of package: in-tray
Case: BG-T11126K-1
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Max. off-state voltage: 1.6kV
Max. load current: 7kA
Load current: 3.16kA
Gate current: 250mA
Max. forward impulse current: 63kA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
T3160N18TOFVTXPSA1 T3160N.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 7kA; 3.16kA; Igt: 250mA
Max. off-state voltage: 1.8kV
Load current: 3.16kA
Max. load current: 7kA
Case: BG-T11126K-1
Max. forward impulse current: 63kA
Gate current: 250mA
Mounting: Press-Pack
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
T360N22TOFXPSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 2.2kV; Ifmax: 550A; 360A; Igt: 200mA
Type of thyristor: hockey-puck
Max. off-state voltage: 2.2kV
Max. load current: 550A
Load current: 360A
Gate current: 200mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 5kA
Features of semiconductor devices: phase controlled thyristor (PCT)
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
T390N16TOFXPSA1 Infineon-T390N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd80128636b9b085316
Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 600A; 381A; Igt: 150mA
Type of thyristor: hockey-puck
Max. off-state voltage: 1.6kV
Max. load current: 600A
Load current: 381A
Gate current: 150mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 4.9kA
Features of semiconductor devices: phase controlled thyristor (PCT)
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
T420N16TOFXPSA1 Infineon-T420N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd80128637bdb055339
Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 750A; 424A; Igt: 200mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Max. off-state voltage: 1.6kV
Max. load current: 750A
Load current: 424A
Gate current: 200mA
Max. forward impulse current: 7.2kA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
T430N12TOFXPSA1 T430N.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.2kV; Ifmax: 700A; 433A; Igt: 200mA
Kind of package: in-tray
Max. forward impulse current: 5.2kA
Gate current: 200mA
Load current: 433A
Max. load current: 700A
Max. off-state voltage: 1.2kV
Features of semiconductor devices: phase controlled thyristor (PCT)
Case: BG-T4214K0-1
Mounting: Press-Pack
Type of thyristor: hockey-puck
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
T501N70TOHXPSA1 Infineon-T501N-DS-v11_00-en_de.pdf?fileId=db3a304412b407950112b4304de2500a
Hersteller: INFINEON TECHNOLOGIES
T501N70TOHXPSA1 Button thyristors
Produkt ist nicht verfügbar
T560N14TOFXPSA1 T560N.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.4kV; Ifmax: 809A; 559A; Igt: 200mA
Type of thyristor: hockey-puck
Max. off-state voltage: 1.4kV
Max. load current: 809A
Load current: 559A
Gate current: 200mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 8kA
Features of semiconductor devices: phase controlled thyristor (PCT)
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
T560N16TOFXPSA1 T560N.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 809A; 559A; Igt: 200mA
Type of thyristor: hockey-puck
Max. off-state voltage: 1.6kV
Max. load current: 809A
Load current: 559A
Gate current: 200mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 8kA
Features of semiconductor devices: phase controlled thyristor (PCT)
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
T560N18TOFXPSA1 T560N.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 809A; 559A; Igt: 200mA
Type of thyristor: hockey-puck
Max. off-state voltage: 1.8kV
Max. load current: 809A
Load current: 559A
Gate current: 200mA
Case: BG-T4814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 8kA
Features of semiconductor devices: phase controlled thyristor (PCT)
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
T590N14TOFXPSA1 T590N.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.4kV; Ifmax: 1.25kA; 590A; Igt: 250mA
Max. off-state voltage: 1.4kV
Load current: 590A
Case: BG-T5726K-1
Max. forward impulse current: 9.4kA
Gate current: 250mA
Mounting: Press-Pack
Max. load current: 1.25kA
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
T590N18TOFXPSA1 T590N.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 1.25kA; 590A; Igt: 250mA
Max. off-state voltage: 1.8kV
Load current: 590A
Case: BG-T5726K-1
Max. forward impulse current: 9.4kA
Gate current: 250mA
Mounting: Press-Pack
Max. load current: 1.25kA
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
T640N12TOFXPSA1 T640Nxx.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.2kV; Ifmax: 1.25kA; 644A; Igt: 250mA
Max. off-state voltage: 1.2kV
Load current: 644A
Case: BG-T4814K0-1
Max. forward impulse current: 9.4kA
Gate current: 250mA
Mounting: Press-Pack
Max. load current: 1.25kA
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
T720N16TOFXPSA1 T720N16TOF.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.6kV; Ifmax: 1.65kA; 720A; Igt: 250mA
Case: BG-T7526K-1
Mounting: Press-Pack
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Max. off-state voltage: 1.6kV
Max. load current: 1.65kA
Load current: 720A
Gate current: 250mA
Max. forward impulse current: 12.5kA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
T740N26TOFXPSA1 T740N_ser.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 2.6kV; Ifmax: 1.5A; 745A; Igt: 250mA
Type of thyristor: hockey-puck
Max. off-state voltage: 2.6kV
Max. load current: 1.5A
Load current: 745A
Gate current: 250mA
Case: BG-T5814K0-1
Mounting: Press-Pack
Kind of package: in-tray
Max. forward impulse current: 13kA
Features of semiconductor devices: phase controlled thyristor (PCT)
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
T830N12TOFXPSA1 T830N.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.2kV; Ifmax: 1.5kA; 844A; Igt: 250mA
Max. off-state voltage: 1.2kV
Load current: 844A
Case: BG-T5814K0-1
Max. forward impulse current: 14.5A
Gate current: 250mA
Mounting: Press-Pack
Max. load current: 1.5kA
Kind of package: in-tray
Features of semiconductor devices: phase controlled thyristor (PCT)
Type of thyristor: hockey-puck
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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