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SPP07N60C3 INFINEON TECHNOLOGIES
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Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.6A; 83W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.6A
Power dissipation: 83W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
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Technische Details SPP07N60C3 INFINEON TECHNOLOGIES
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 4.6A; 83W; PG-TO220-3, Type of transistor: N-MOSFET, Technology: CoolMOS™, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 4.6A, Power dissipation: 83W, Case: PG-TO220-3, Gate-source voltage: ±20V, On-state resistance: 0.6Ω, Mounting: THT, Kind of package: tube, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
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SPP07N60C3 | Hersteller : Infineon Technologies |
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SPP07N60C3 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 4.6A; 83W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 4.6A Power dissipation: 83W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |