Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (139478) > Seite 1248 nach 2325
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| ND89N16KHPSA1 | INFINEON TECHNOLOGIES | ND89N16K Diode modules |
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PVDZ172NPBF | INFINEON TECHNOLOGIES |
  Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 1.5A; 0÷60VDC; MOSFET Case: DIP8 On-state resistance: 0.25Ω Operating temperature: -40...85°C Contacts configuration: SPST-NO Max. operating current: 1.5A Type of relay: solid state Relay variant: MOSFET Relay series: PVDZ172NPbF Control current: 5...25mA Operate time: 2ms Release time: 0.5ms Switched voltage: 0...60V DC Mounting: THT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 35 Stücke: Lieferzeit 7-14 Tag (e) |
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PVG612 | INFINEON TECHNOLOGIES |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 2.4A; 0÷60VAC; PVG612 Contacts configuration: SPST-NO Mounting: THT Operating temperature: -40...85°C On-state resistance: 0.15Ω Max. operating current: 2.4A Type of relay: solid state Relay variant: MOSFET Relay series: PVG612 Control current: 5...25mA Operate time: 2ms Release time: 0.5ms Switched voltage: -60...60V DC; 0...60V AC Case: DIP6 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 501 Stücke: Lieferzeit 7-14 Tag (e) |
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PVG612ASPBF | INFINEON TECHNOLOGIES |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 4A; 0÷60VAC; -60÷60VDC Contacts configuration: SPST-NO Mounting: SMT Operating temperature: -40...85°C On-state resistance: 0.1Ω Max. operating current: 4A Type of relay: solid state Relay variant: MOSFET Relay series: PVG612 Control current: 5...25mA Operate time: 3.5ms Release time: 0.5ms Switched voltage: -60...60V DC; 0...60V AC Case: DIP6 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 183 Stücke: Lieferzeit 7-14 Tag (e) |
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PVG612S | INFINEON TECHNOLOGIES |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 2.4A; 0÷60VAC; PVG612 Contacts configuration: SPST-NO Mounting: SMT Operating temperature: -40...85°C On-state resistance: 0.15Ω Max. operating current: 2.4A Type of relay: solid state Relay variant: MOSFET Relay series: PVG612 Control current: 5...25mA Operate time: 2ms Release time: 0.5ms Switched voltage: -60...60V DC; 0...60V AC Case: DIP6 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 649 Stücke: Lieferzeit 7-14 Tag (e) |
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PVI1050NSPBF | INFINEON TECHNOLOGIES |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 2.5kV; Gull wing 8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: photodiode Insulation voltage: 2.5kV Case: Gull wing 8 Turn-on time: 0.3ms Turn-off time: 220µs Manufacturer series: PVI-NPbF Anzahl je Verpackung: 1 Stücke |
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PVI5013RS-TPBF | INFINEON TECHNOLOGIES |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: photodiode Insulation voltage: 3.75kV Case: Gull wing 8 Turn-on time: 5ms Turn-off time: 0.25ms Manufacturer series: PVI5013RPbF Anzahl je Verpackung: 1 Stücke |
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PVI5013RSPBF | INFINEON TECHNOLOGIES |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: photodiode Insulation voltage: 3.75kV Case: Gull wing 8 Turn-on time: 5ms Turn-off time: 25µs Manufacturer series: PVI5013RPbF Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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PVI5033RS-TPBF | INFINEON TECHNOLOGIES |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: photodiode Insulation voltage: 3.75kV Case: Gull wing 8 Turn-on time: 2.5ms Turn-off time: 0.5ms Manufacturer series: PVI5033RPbF Anzahl je Verpackung: 1 Stücke |
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PVI5033RSPBF | INFINEON TECHNOLOGIES |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: photodiode Insulation voltage: 3.75kV Case: Gull wing 8 Turn-on time: 2.5ms Turn-off time: 5ms Manufacturer series: PVI5033RPbF Anzahl je Verpackung: 1 Stücke |
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PVI5050NSPBF | INFINEON TECHNOLOGIES |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; 4kV; Gull wing 8; PVI-NPbF Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: photodiode Insulation voltage: 4kV Case: Gull wing 8 Turn-on time: 0.3ms Turn-off time: 220µs Manufacturer series: PVI-NPbF Anzahl je Verpackung: 1 Stücke |
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| PVI5080NPBF | INFINEON TECHNOLOGIES |
PVI5080NPBF Optocouplers - others |
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PVT322PBF | INFINEON TECHNOLOGIES |
Category: One Phase Solid State Relays Description: Relay: solid state; DPST-NO; Icntrl: 2÷25mA; 500mA; 0÷250VAC; 10Ω On-state resistance: 10Ω Contacts configuration: DPST-NO Max. operating current: 0.5A Type of relay: solid state Relay variant: MOSFET Relay series: PVT322PbF Control current: 2...25mA Operate time: 3ms Release time: 0.5ms Switched voltage: 0...250V AC; 0...250V DC Mounting: THT Operating temperature: -40...85°C Case: DIP8 Anzahl je Verpackung: 1 Stücke |
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PVT412LSPBF | INFINEON TECHNOLOGIES |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl: 3÷25mA; 200mA; 0÷400VAC; 35Ω Type of relay: solid state Contacts configuration: SPST-NO Control current: 3...25mA Max. operating current: 0.2A Switched voltage: 0...400V AC; 0...400V DC Relay series: PVT412PbF Relay variant: MOSFET On-state resistance: 35Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Operate time: 2ms Release time: 0.5ms Anzahl je Verpackung: 1 Stücke |
auf Bestellung 487 Stücke: Lieferzeit 7-14 Tag (e) |
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PVT422PBF | INFINEON TECHNOLOGIES |
Category: One Phase Solid State Relays Description: Relay: solid state; DPST-NO; Icntrl: 2÷25mA; 350mA; 0÷400VAC; 35Ω Type of relay: solid state Contacts configuration: DPST-NO Control current: 2...25mA Max. operating current: 350mA Switched voltage: 0...400V AC; 0...400V DC Relay series: PVT422PbF Relay variant: MOSFET On-state resistance: 35Ω Mounting: THT Case: DIP8 Operating temperature: -40...85°C Operate time: 2ms Release time: 0.5ms Anzahl je Verpackung: 1 Stücke |
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PVT422SPBF | INFINEON TECHNOLOGIES |
Category: One Phase Solid State Relays Description: Relay: solid state; DPST-NO; Icntrl: 2÷25mA; 350mA; 0÷400VAC; 35Ω Type of relay: solid state Contacts configuration: DPST-NO Control current: 2...25mA Max. operating current: 350mA Switched voltage: 0...400V AC; 0...400V DC Relay series: PVT422PbF Relay variant: MOSFET On-state resistance: 35Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Operate time: 2ms Release time: 0.5ms Anzahl je Verpackung: 1 Stücke |
auf Bestellung 12 Stücke: Lieferzeit 7-14 Tag (e) |
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| SAK-TC1797-384F150E | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: microcontroller; BGA416; 3MBFLASH; 3.5÷5VDC Type of integrated circuit: microcontroller Case: BGA416 Memory: 3MB FLASH Mounting: SMD Supply voltage: 3.5...5V DC Interface: I2C; SPI; UART Anzahl je Verpackung: 1 Stücke |
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SGB02N120 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 2.8A; 62W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 2.8A Power dissipation: 62W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 9.6A Mounting: SMD Kind of package: reel Turn-on time: 40ns Turn-off time: 375ns Anzahl je Verpackung: 1000 Stücke |
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SGP07N120 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 16.5A; 125W; TO220AB; single transistor Mounting: THT Kind of package: tube Collector-emitter voltage: 1.2kV Power dissipation: 125W Type of transistor: IGBT Semiconductor structure: single transistor Case: TO220AB Collector current: 16.5A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4435DYTRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -6.4A; Idm: -50A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -6.4A Pulsed drain current: -50A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4000 Stücke: Lieferzeit 7-14 Tag (e) |
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SKW25N120 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 25A; 313W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 25A Power dissipation: 313W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 84A Mounting: THT Kind of package: tube Turn-on time: 85ns Turn-off time: 760ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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SMBD914E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.25A; SOT23; 370mW; reel,tape Mounting: SMD Power dissipation: 0.37W Kind of package: reel; tape Type of diode: switching Features of semiconductor devices: fast switching Case: SOT23 Max. off-state voltage: 100V Load current: 0.25A Semiconductor structure: single diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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SMBT2222AE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.33W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 300MHz Anzahl je Verpackung: 1 Stücke |
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SMBT2907AE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.33W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 200MHz Anzahl je Verpackung: 1 Stücke |
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SMBT3904SH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.25W; SOT363 Collector-emitter voltage: 40V Collector current: 0.2A Type of transistor: NPN Power dissipation: 0.25W Polarisation: bipolar Mounting: SMD Case: SOT363 Frequency: 300MHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 113 Stücke: Lieferzeit 7-14 Tag (e) |
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SMBT3906E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.33W; SOT23 Type of transistor: PNP Collector current: 0.2A Collector-emitter voltage: 40V Frequency: 250MHz Case: SOT23 Mounting: SMD Power dissipation: 0.33W Polarisation: bipolar Anzahl je Verpackung: 10 Stücke |
auf Bestellung 1900 Stücke: Lieferzeit 7-14 Tag (e) |
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SMBTA06E6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 0.1A; 0.33W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 100MHz Anzahl je Verpackung: 1 Stücke |
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SMBTA06UPNE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 80V; 0.5A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.33W Case: SC74 Mounting: SMD Frequency: 100MHz Anzahl je Verpackung: 5 Stücke |
auf Bestellung 940 Stücke: Lieferzeit 7-14 Tag (e) |
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SMBTA42E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.36W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.36W Case: SOT23 Mounting: SMD Frequency: 70MHz Anzahl je Verpackung: 1 Stücke |
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SMBTA92E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.36W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.36W Case: SOT23 Mounting: SMD Frequency: 50MHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1833 Stücke: Lieferzeit 7-14 Tag (e) |
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SN7002NH6327XTSA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.36W; SOT23 Mounting: SMD Case: SOT23 Power dissipation: 0.36W Drain-source voltage: 60V Drain current: 0.2A On-state resistance: 5Ω Type of transistor: N-MOSFET Polarisation: unipolar Technology: SIPMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 5 Stücke |
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SN7002NH6433XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.16A; 0.36W; SOT23 Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.16A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
auf Bestellung 7340 Stücke: Lieferzeit 7-14 Tag (e) |
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SN7002WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.5W; SOT323 Drain-source voltage: 60V Drain current: 0.23A On-state resistance: 5Ω Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar Technology: SIPMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: SOT323 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2438 Stücke: Lieferzeit 7-14 Tag (e) |
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SPA06N80C3 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 39W; PG-TO220-3-FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 6A Power dissipation: 39W Case: PG-TO220-3-FP Gate-source voltage: ±20V On-state resistance: 0.9Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 35 Stücke: Lieferzeit 7-14 Tag (e) |
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SPA07N60C3 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 32W; PG-TO220-3-FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 32W Case: PG-TO220-3-FP Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 77 Stücke: Lieferzeit 7-14 Tag (e) |
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SPA08N80C3 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 40W; PG-TO220-3-FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Power dissipation: 40W Case: PG-TO220-3-FP Gate-source voltage: ±20V On-state resistance: 0.65Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 68 Stücke: Lieferzeit 7-14 Tag (e) |
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| SPA11N60C3XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 33W; PG-TO220 FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 7A Pulsed drain current: 33A Power dissipation: 33W Case: PG-TO220 FP Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Kind of channel: enhanced Anzahl je Verpackung: 500 Stücke |
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SPA11N80C3 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 34W; PG-TO220-3-FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 11A Power dissipation: 34W Case: PG-TO220-3-FP Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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SPA15N60C3XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; Idm: 45A; 34W Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 9.4A Pulsed drain current: 45A Power dissipation: 34W Case: PG-TO220 FP Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 11 Stücke: Lieferzeit 7-14 Tag (e) |
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SPA17N80C3 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 42W; PG-TO220-3-FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 17A Power dissipation: 42W Case: PG-TO220-3-FP Gate-source voltage: ±20V On-state resistance: 0.29Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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SPA20N60C3 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 34.5W; PG-TO220-3-FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.1A Power dissipation: 34.5W Case: PG-TO220-3-FP Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 35 Stücke: Lieferzeit 7-14 Tag (e) |
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SPA20N60CFDXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 35W; PG-TO220-3-FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.1A Power dissipation: 35W Case: PG-TO220-3-FP Gate-source voltage: ±20V On-state resistance: 0.22Ω Mounting: THT Kind of channel: enhanced Anzahl je Verpackung: 500 Stücke |
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| SPB11N60C3ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 125W; PG-TO263 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 7A Pulsed drain current: 33A Power dissipation: 125W Case: PG-TO263 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1000 Stücke |
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SPB17N80C3 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 227W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 17A Power dissipation: 227W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.29Ω Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 470 Stücke: Lieferzeit 7-14 Tag (e) |
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SPB18P06PGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -18.6A; 81.1W; PG-TO263-3 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -60V Drain current: -18.6A Power dissipation: 81.1W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SPB20N60C3 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20.7A; 208W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.7A Power dissipation: 208W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 945 Stücke: Lieferzeit 7-14 Tag (e) |
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SPB20N60S5 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 208W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 208W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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| SPB80P06PGATMA1 | INFINEON TECHNOLOGIES |
SPB80P06PGATMA1 SMD P channel transistors |
auf Bestellung 901 Stücke: Lieferzeit 7-14 Tag (e) |
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| SPD03N50C3ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; PG-TO252 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 2A Pulsed drain current: 9.6A Power dissipation: 38W Case: PG-TO252 Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| SPD03N60C3ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; PG-TO252 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 2A Pulsed drain current: 9.6A Power dissipation: 38W Case: PG-TO252 Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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SPD04N50C3 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 560V; 4.5A; 42W; PG-TO252-3 Technology: CoolMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Polarisation: unipolar On-state resistance: 0.95Ω Drain-source voltage: 560V Drain current: 4.5A Case: PG-TO252-3 Power dissipation: 42W Mounting: SMD Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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| SPD04N60C3ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 2.8A; Idm: 13.5A; 50W Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 2.8A Pulsed drain current: 13.5A Power dissipation: 50W Case: PG-TO252 Gate-source voltage: ±20V On-state resistance: 0.95Ω Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| SPD04N80C3ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.5A; Idm: 12A; 63W Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.5A Pulsed drain current: 12A Power dissipation: 63W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 1.3Ω Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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SPD04P10PGBTMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -4A; 38W; PG-TO252-3 Power dissipation: 38W Case: PG-TO252-3 Mounting: SMD Drain-source voltage: -100V Drain current: -4A On-state resistance: 1Ω Type of transistor: P-MOSFET Polarisation: unipolar Technology: SIPMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SPD04P10PLGBTMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 38W; PG-TO252-3 Technology: SIPMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PG-TO252-3 Drain-source voltage: -100V Drain current: -4.2A On-state resistance: 0.85Ω Type of transistor: P-MOSFET Power dissipation: 38W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SPD06N80C3ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.8A; Idm: 18A; 83W Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.8A Pulsed drain current: 18A Power dissipation: 83W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.9Ω Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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SPD08N50C3BTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 4.6A; 83W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 4.6A Power dissipation: 83W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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SPD08P06PGBTMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -8.8A; 42W; PG-TO252-3 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -60V Drain current: -8.8A Power dissipation: 42W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SPD09P06PLGBTMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -9.7A; 42W; PG-TO252-3 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -60V Drain current: -9.7A Power dissipation: 42W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.25Ω Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2021 Stücke: Lieferzeit 7-14 Tag (e) |
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SPD15P10PGBTMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO252-3 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -100V Drain current: -15A Power dissipation: 128W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.24Ω Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
| PVDZ172NPBF | |
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Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 1.5A; 0÷60VDC; MOSFET
Case: DIP8
On-state resistance: 0.25Ω
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Max. operating current: 1.5A
Type of relay: solid state
Relay variant: MOSFET
Relay series: PVDZ172NPbF
Control current: 5...25mA
Operate time: 2ms
Release time: 0.5ms
Switched voltage: 0...60V DC
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 1.5A; 0÷60VDC; MOSFET
Case: DIP8
On-state resistance: 0.25Ω
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Max. operating current: 1.5A
Type of relay: solid state
Relay variant: MOSFET
Relay series: PVDZ172NPbF
Control current: 5...25mA
Operate time: 2ms
Release time: 0.5ms
Switched voltage: 0...60V DC
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 35 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 17.12 EUR |
| 9+ | 8.29 EUR |
| 10+ | 7.84 EUR |
| PVG612 | |
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Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 2.4A; 0÷60VAC; PVG612
Contacts configuration: SPST-NO
Mounting: THT
Operating temperature: -40...85°C
On-state resistance: 0.15Ω
Max. operating current: 2.4A
Type of relay: solid state
Relay variant: MOSFET
Relay series: PVG612
Control current: 5...25mA
Operate time: 2ms
Release time: 0.5ms
Switched voltage: -60...60V DC; 0...60V AC
Case: DIP6
Anzahl je Verpackung: 1 Stücke
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 2.4A; 0÷60VAC; PVG612
Contacts configuration: SPST-NO
Mounting: THT
Operating temperature: -40...85°C
On-state resistance: 0.15Ω
Max. operating current: 2.4A
Type of relay: solid state
Relay variant: MOSFET
Relay series: PVG612
Control current: 5...25mA
Operate time: 2ms
Release time: 0.5ms
Switched voltage: -60...60V DC; 0...60V AC
Case: DIP6
Anzahl je Verpackung: 1 Stücke
auf Bestellung 501 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 9.98 EUR |
| 11+ | 6.51 EUR |
| PVG612ASPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 4A; 0÷60VAC; -60÷60VDC
Contacts configuration: SPST-NO
Mounting: SMT
Operating temperature: -40...85°C
On-state resistance: 0.1Ω
Max. operating current: 4A
Type of relay: solid state
Relay variant: MOSFET
Relay series: PVG612
Control current: 5...25mA
Operate time: 3.5ms
Release time: 0.5ms
Switched voltage: -60...60V DC; 0...60V AC
Case: DIP6
Anzahl je Verpackung: 1 Stücke
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 4A; 0÷60VAC; -60÷60VDC
Contacts configuration: SPST-NO
Mounting: SMT
Operating temperature: -40...85°C
On-state resistance: 0.1Ω
Max. operating current: 4A
Type of relay: solid state
Relay variant: MOSFET
Relay series: PVG612
Control current: 5...25mA
Operate time: 3.5ms
Release time: 0.5ms
Switched voltage: -60...60V DC; 0...60V AC
Case: DIP6
Anzahl je Verpackung: 1 Stücke
auf Bestellung 183 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 24.85 EUR |
| 6+ | 13.04 EUR |
| PVG612S | |
|
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 2.4A; 0÷60VAC; PVG612
Contacts configuration: SPST-NO
Mounting: SMT
Operating temperature: -40...85°C
On-state resistance: 0.15Ω
Max. operating current: 2.4A
Type of relay: solid state
Relay variant: MOSFET
Relay series: PVG612
Control current: 5...25mA
Operate time: 2ms
Release time: 0.5ms
Switched voltage: -60...60V DC; 0...60V AC
Case: DIP6
Anzahl je Verpackung: 1 Stücke
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 2.4A; 0÷60VAC; PVG612
Contacts configuration: SPST-NO
Mounting: SMT
Operating temperature: -40...85°C
On-state resistance: 0.15Ω
Max. operating current: 2.4A
Type of relay: solid state
Relay variant: MOSFET
Relay series: PVG612
Control current: 5...25mA
Operate time: 2ms
Release time: 0.5ms
Switched voltage: -60...60V DC; 0...60V AC
Case: DIP6
Anzahl je Verpackung: 1 Stücke
auf Bestellung 649 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 13.04 EUR |
| 10+ | 7.44 EUR |
| PVI1050NSPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 2.5kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 2.5kV
Case: Gull wing 8
Turn-on time: 0.3ms
Turn-off time: 220µs
Manufacturer series: PVI-NPbF
Anzahl je Verpackung: 1 Stücke
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 2.5kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 2.5kV
Case: Gull wing 8
Turn-on time: 0.3ms
Turn-off time: 220µs
Manufacturer series: PVI-NPbF
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PVI5013RS-TPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: Gull wing 8
Turn-on time: 5ms
Turn-off time: 0.25ms
Manufacturer series: PVI5013RPbF
Anzahl je Verpackung: 1 Stücke
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: Gull wing 8
Turn-on time: 5ms
Turn-off time: 0.25ms
Manufacturer series: PVI5013RPbF
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PVI5013RSPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: Gull wing 8
Turn-on time: 5ms
Turn-off time: 25µs
Manufacturer series: PVI5013RPbF
Anzahl je Verpackung: 1 Stücke
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: Gull wing 8
Turn-on time: 5ms
Turn-off time: 25µs
Manufacturer series: PVI5013RPbF
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 14.3 EUR |
| 12+ | 5.96 EUR |
| PVI5033RS-TPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: Gull wing 8
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Manufacturer series: PVI5033RPbF
Anzahl je Verpackung: 1 Stücke
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: Gull wing 8
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Manufacturer series: PVI5033RPbF
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PVI5033RSPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: Gull wing 8
Turn-on time: 2.5ms
Turn-off time: 5ms
Manufacturer series: PVI5033RPbF
Anzahl je Verpackung: 1 Stücke
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: Gull wing 8
Turn-on time: 2.5ms
Turn-off time: 5ms
Manufacturer series: PVI5033RPbF
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PVI5050NSPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; 4kV; Gull wing 8; PVI-NPbF
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: photodiode
Insulation voltage: 4kV
Case: Gull wing 8
Turn-on time: 0.3ms
Turn-off time: 220µs
Manufacturer series: PVI-NPbF
Anzahl je Verpackung: 1 Stücke
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; 4kV; Gull wing 8; PVI-NPbF
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: photodiode
Insulation voltage: 4kV
Case: Gull wing 8
Turn-on time: 0.3ms
Turn-off time: 220µs
Manufacturer series: PVI-NPbF
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PVI5080NPBF |
|
Hersteller: INFINEON TECHNOLOGIES
PVI5080NPBF Optocouplers - others
PVI5080NPBF Optocouplers - others
Produkt ist nicht verfügbar
| PVT322PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Icntrl: 2÷25mA; 500mA; 0÷250VAC; 10Ω
On-state resistance: 10Ω
Contacts configuration: DPST-NO
Max. operating current: 0.5A
Type of relay: solid state
Relay variant: MOSFET
Relay series: PVT322PbF
Control current: 2...25mA
Operate time: 3ms
Release time: 0.5ms
Switched voltage: 0...250V AC; 0...250V DC
Mounting: THT
Operating temperature: -40...85°C
Case: DIP8
Anzahl je Verpackung: 1 Stücke
Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Icntrl: 2÷25mA; 500mA; 0÷250VAC; 10Ω
On-state resistance: 10Ω
Contacts configuration: DPST-NO
Max. operating current: 0.5A
Type of relay: solid state
Relay variant: MOSFET
Relay series: PVT322PbF
Control current: 2...25mA
Operate time: 3ms
Release time: 0.5ms
Switched voltage: 0...250V AC; 0...250V DC
Mounting: THT
Operating temperature: -40...85°C
Case: DIP8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PVT412LSPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 3÷25mA; 200mA; 0÷400VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control current: 3...25mA
Max. operating current: 0.2A
Switched voltage: 0...400V AC; 0...400V DC
Relay series: PVT412PbF
Relay variant: MOSFET
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Operate time: 2ms
Release time: 0.5ms
Anzahl je Verpackung: 1 Stücke
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 3÷25mA; 200mA; 0÷400VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control current: 3...25mA
Max. operating current: 0.2A
Switched voltage: 0...400V AC; 0...400V DC
Relay series: PVT412PbF
Relay variant: MOSFET
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Operate time: 2ms
Release time: 0.5ms
Anzahl je Verpackung: 1 Stücke
auf Bestellung 487 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 7.15 EUR |
| 14+ | 5.19 EUR |
| 100+ | 5 EUR |
| PVT422PBF | |
|
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Icntrl: 2÷25mA; 350mA; 0÷400VAC; 35Ω
Type of relay: solid state
Contacts configuration: DPST-NO
Control current: 2...25mA
Max. operating current: 350mA
Switched voltage: 0...400V AC; 0...400V DC
Relay series: PVT422PbF
Relay variant: MOSFET
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Operate time: 2ms
Release time: 0.5ms
Anzahl je Verpackung: 1 Stücke
Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Icntrl: 2÷25mA; 350mA; 0÷400VAC; 35Ω
Type of relay: solid state
Contacts configuration: DPST-NO
Control current: 2...25mA
Max. operating current: 350mA
Switched voltage: 0...400V AC; 0...400V DC
Relay series: PVT422PbF
Relay variant: MOSFET
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Operate time: 2ms
Release time: 0.5ms
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| PVT422SPBF | |
|
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Icntrl: 2÷25mA; 350mA; 0÷400VAC; 35Ω
Type of relay: solid state
Contacts configuration: DPST-NO
Control current: 2...25mA
Max. operating current: 350mA
Switched voltage: 0...400V AC; 0...400V DC
Relay series: PVT422PbF
Relay variant: MOSFET
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Operate time: 2ms
Release time: 0.5ms
Anzahl je Verpackung: 1 Stücke
Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Icntrl: 2÷25mA; 350mA; 0÷400VAC; 35Ω
Type of relay: solid state
Contacts configuration: DPST-NO
Control current: 2...25mA
Max. operating current: 350mA
Switched voltage: 0...400V AC; 0...400V DC
Relay series: PVT422PbF
Relay variant: MOSFET
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Operate time: 2ms
Release time: 0.5ms
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 16.57 EUR |
| 8+ | 9.27 EUR |
| 9+ | 8.75 EUR |
| SAK-TC1797-384F150E |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller; BGA416; 3MBFLASH; 3.5÷5VDC
Type of integrated circuit: microcontroller
Case: BGA416
Memory: 3MB FLASH
Mounting: SMD
Supply voltage: 3.5...5V DC
Interface: I2C; SPI; UART
Anzahl je Verpackung: 1 Stücke
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller; BGA416; 3MBFLASH; 3.5÷5VDC
Type of integrated circuit: microcontroller
Case: BGA416
Memory: 3MB FLASH
Mounting: SMD
Supply voltage: 3.5...5V DC
Interface: I2C; SPI; UART
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SGB02N120 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 2.8A; 62W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 2.8A
Power dissipation: 62W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 9.6A
Mounting: SMD
Kind of package: reel
Turn-on time: 40ns
Turn-off time: 375ns
Anzahl je Verpackung: 1000 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 2.8A; 62W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 2.8A
Power dissipation: 62W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 9.6A
Mounting: SMD
Kind of package: reel
Turn-on time: 40ns
Turn-off time: 375ns
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
| SGP07N120 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 16.5A; 125W; TO220AB; single transistor
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 1.2kV
Power dissipation: 125W
Type of transistor: IGBT
Semiconductor structure: single transistor
Case: TO220AB
Collector current: 16.5A
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 16.5A; 125W; TO220AB; single transistor
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 1.2kV
Power dissipation: 125W
Type of transistor: IGBT
Semiconductor structure: single transistor
Case: TO220AB
Collector current: 16.5A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 71.5 EUR |
| 3+ | 23.84 EUR |
| 5+ | 14.3 EUR |
| 12+ | 5.96 EUR |
| SI4435DYTRPBF | |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.4A; Idm: -50A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.4A
Pulsed drain current: -50A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.4A; Idm: -50A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.4A
Pulsed drain current: -50A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 72+ | 1 EUR |
| 89+ | 0.81 EUR |
| 158+ | 0.45 EUR |
| 167+ | 0.43 EUR |
| 2000+ | 0.39 EUR |
| SKW25N120 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 313W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 313W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 84A
Mounting: THT
Kind of package: tube
Turn-on time: 85ns
Turn-off time: 760ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 313W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 313W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 84A
Mounting: THT
Kind of package: tube
Turn-on time: 85ns
Turn-off time: 760ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 23.84 EUR |
| 4+ | 17.88 EUR |
| SMBD914E6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; SOT23; 370mW; reel,tape
Mounting: SMD
Power dissipation: 0.37W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: fast switching
Case: SOT23
Max. off-state voltage: 100V
Load current: 0.25A
Semiconductor structure: single diode
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; SOT23; 370mW; reel,tape
Mounting: SMD
Power dissipation: 0.37W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: fast switching
Case: SOT23
Max. off-state voltage: 100V
Load current: 0.25A
Semiconductor structure: single diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 35.75 EUR |
| 10+ | 7.15 EUR |
| 25+ | 2.86 EUR |
| 100+ | 0.72 EUR |
| 250+ | 0.29 EUR |
| 331+ | 0.21 EUR |
| 910+ | 0.079 EUR |
| SMBT2222AE6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 300MHz
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 300MHz
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SMBT2907AE6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SMBT3904SH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.25W; SOT363
Collector-emitter voltage: 40V
Collector current: 0.2A
Type of transistor: NPN
Power dissipation: 0.25W
Polarisation: bipolar
Mounting: SMD
Case: SOT363
Frequency: 300MHz
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.25W; SOT363
Collector-emitter voltage: 40V
Collector current: 0.2A
Type of transistor: NPN
Power dissipation: 0.25W
Polarisation: bipolar
Mounting: SMD
Case: SOT363
Frequency: 300MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 113 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 113+ | 0.63 EUR |
| 243+ | 0.3 EUR |
| 666+ | 0.11 EUR |
| 3000+ | 0.063 EUR |
| SMBT3906E6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.33W; SOT23
Type of transistor: PNP
Collector current: 0.2A
Collector-emitter voltage: 40V
Frequency: 250MHz
Case: SOT23
Mounting: SMD
Power dissipation: 0.33W
Polarisation: bipolar
Anzahl je Verpackung: 10 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.33W; SOT23
Type of transistor: PNP
Collector current: 0.2A
Collector-emitter voltage: 40V
Frequency: 250MHz
Case: SOT23
Mounting: SMD
Power dissipation: 0.33W
Polarisation: bipolar
Anzahl je Verpackung: 10 Stücke
auf Bestellung 1900 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 720+ | 0.1 EUR |
| 950+ | 0.076 EUR |
| 1070+ | 0.067 EUR |
| 1160+ | 0.062 EUR |
| 1220+ | 0.059 EUR |
| 1230+ | 0.058 EUR |
| 3000+ | 0.056 EUR |
| SMBTA06E6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SMBTA06UPNE6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 80V; 0.5A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SC74
Mounting: SMD
Frequency: 100MHz
Anzahl je Verpackung: 5 Stücke
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 80V; 0.5A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SC74
Mounting: SMD
Frequency: 100MHz
Anzahl je Verpackung: 5 Stücke
auf Bestellung 940 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 220+ | 0.33 EUR |
| 405+ | 0.18 EUR |
| 460+ | 0.16 EUR |
| 500+ | 0.14 EUR |
| 3000+ | 0.13 EUR |
| SMBTA42E6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 70MHz
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 70MHz
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SMBTA92E6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.36W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 50MHz
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.36W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 50MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1833 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 379+ | 0.19 EUR |
| 618+ | 0.12 EUR |
| 685+ | 0.1 EUR |
| 863+ | 0.083 EUR |
| 910+ | 0.079 EUR |
| SN7002NH6327XTSA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.36W; SOT23
Mounting: SMD
Case: SOT23
Power dissipation: 0.36W
Drain-source voltage: 60V
Drain current: 0.2A
On-state resistance: 5Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.36W; SOT23
Mounting: SMD
Case: SOT23
Power dissipation: 0.36W
Drain-source voltage: 60V
Drain current: 0.2A
On-state resistance: 5Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| SN7002NH6433XTMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.16A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.16A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.16A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.16A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 7340 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 800+ | 0.089 EUR |
| 900+ | 0.08 EUR |
| 1040+ | 0.069 EUR |
| 1100+ | 0.065 EUR |
| 10000+ | 0.064 EUR |
| SN7002WH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.5W; SOT323
Drain-source voltage: 60V
Drain current: 0.23A
On-state resistance: 5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SOT323
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.5W; SOT323
Drain-source voltage: 60V
Drain current: 0.23A
On-state resistance: 5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SOT323
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2438 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 157+ | 0.46 EUR |
| 277+ | 0.26 EUR |
| 420+ | 0.17 EUR |
| 500+ | 0.14 EUR |
| 1044+ | 0.068 EUR |
| 1104+ | 0.065 EUR |
| 6000+ | 0.062 EUR |
| SPA06N80C3 |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 39W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 39W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 39W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 39W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 35 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 30+ | 2.43 EUR |
| 33+ | 2.19 EUR |
| 35+ | 2.04 EUR |
| SPA07N60C3 | |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 32W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 32W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 32W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 32W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 77 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 31+ | 2.36 EUR |
| 35+ | 2.09 EUR |
| 38+ | 1.92 EUR |
| 39+ | 1.87 EUR |
| 40+ | 1.8 EUR |
| 50+ | 1.76 EUR |
| SPA08N80C3 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 40W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 40W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 40W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 40W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 68 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 27+ | 2.66 EUR |
| 30+ | 2.43 EUR |
| 39+ | 1.86 EUR |
| 41+ | 1.76 EUR |
| SPA11N60C3XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 33W; PG-TO220 FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 33A
Power dissipation: 33W
Case: PG-TO220 FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 500 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 33W; PG-TO220 FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 33A
Power dissipation: 33W
Case: PG-TO220 FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 500 Stücke
Produkt ist nicht verfügbar
| SPA11N80C3 | |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 34W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 34W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 34W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 34W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SPA15N60C3XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; Idm: 45A; 34W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.4A
Pulsed drain current: 45A
Power dissipation: 34W
Case: PG-TO220 FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; Idm: 45A; 34W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.4A
Pulsed drain current: 45A
Power dissipation: 34W
Case: PG-TO220 FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 11+ | 6.51 EUR |
| 16+ | 4.46 EUR |
| SPA17N80C3 | |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 42W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 17A
Power dissipation: 42W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 42W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 17A
Power dissipation: 42W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SPA20N60C3 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 34.5W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 34.5W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 34.5W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 34.5W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 35 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 15+ | 5.02 EUR |
| 17+ | 4.43 EUR |
| 19+ | 3.83 EUR |
| 20+ | 3.63 EUR |
| SPA20N60CFDXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 35W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 35W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 500 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 35W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 35W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 500 Stücke
Produkt ist nicht verfügbar
| SPB11N60C3ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 125W; PG-TO263
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 33A
Power dissipation: 125W
Case: PG-TO263
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; Idm: 33A; 125W; PG-TO263
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 33A
Power dissipation: 125W
Case: PG-TO263
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
| SPB17N80C3 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 227W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 17A
Power dissipation: 227W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 227W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 17A
Power dissipation: 227W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 470 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 11+ | 6.72 EUR |
| 14+ | 5.16 EUR |
| 15+ | 4.88 EUR |
| 250+ | 4.69 EUR |
| SPB18P06PGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.6A; 81.1W; PG-TO263-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18.6A
Power dissipation: 81.1W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.6A; 81.1W; PG-TO263-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18.6A
Power dissipation: 81.1W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SPB20N60C3 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.7A; 208W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.7A
Power dissipation: 208W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.7A; 208W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.7A
Power dissipation: 208W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 945 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 16+ | 4.49 EUR |
| 21+ | 3.45 EUR |
| 22+ | 3.26 EUR |
| 250+ | 3.2 EUR |
| 1000+ | 3.13 EUR |
| SPB20N60S5 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 208W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 208W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 208W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 208W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
| SPB80P06PGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
SPB80P06PGATMA1 SMD P channel transistors
SPB80P06PGATMA1 SMD P channel transistors
auf Bestellung 901 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 17+ | 4.32 EUR |
| 23+ | 3.15 EUR |
| 25+ | 2.97 EUR |
| SPD03N50C3ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 9.6A
Power dissipation: 38W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 9.6A
Power dissipation: 38W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| SPD03N60C3ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 9.6A
Power dissipation: 38W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 9.6A
Power dissipation: 38W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| SPD04N50C3 | |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 560V; 4.5A; 42W; PG-TO252-3
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
On-state resistance: 0.95Ω
Drain-source voltage: 560V
Drain current: 4.5A
Case: PG-TO252-3
Power dissipation: 42W
Mounting: SMD
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 560V; 4.5A; 42W; PG-TO252-3
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
On-state resistance: 0.95Ω
Drain-source voltage: 560V
Drain current: 4.5A
Case: PG-TO252-3
Power dissipation: 42W
Mounting: SMD
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 23.84 EUR |
| SPD04N60C3ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.8A; Idm: 13.5A; 50W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.8A
Pulsed drain current: 13.5A
Power dissipation: 50W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.8A; Idm: 13.5A; 50W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.8A
Pulsed drain current: 13.5A
Power dissipation: 50W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| SPD04N80C3ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.5A; Idm: 12A; 63W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.5A
Pulsed drain current: 12A
Power dissipation: 63W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.5A; Idm: 12A; 63W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.5A
Pulsed drain current: 12A
Power dissipation: 63W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| SPD04P10PGBTMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4A; 38W; PG-TO252-3
Power dissipation: 38W
Case: PG-TO252-3
Mounting: SMD
Drain-source voltage: -100V
Drain current: -4A
On-state resistance: 1Ω
Type of transistor: P-MOSFET
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4A; 38W; PG-TO252-3
Power dissipation: 38W
Case: PG-TO252-3
Mounting: SMD
Drain-source voltage: -100V
Drain current: -4A
On-state resistance: 1Ω
Type of transistor: P-MOSFET
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SPD04P10PLGBTMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 38W; PG-TO252-3
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TO252-3
Drain-source voltage: -100V
Drain current: -4.2A
On-state resistance: 0.85Ω
Type of transistor: P-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 38W; PG-TO252-3
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TO252-3
Drain-source voltage: -100V
Drain current: -4.2A
On-state resistance: 0.85Ω
Type of transistor: P-MOSFET
Power dissipation: 38W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SPD06N80C3ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.8A; Idm: 18A; 83W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.8A
Pulsed drain current: 18A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.8A; Idm: 18A; 83W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.8A
Pulsed drain current: 18A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| SPD08N50C3BTMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.6A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.6A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.6A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.6A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| SPD08P06PGBTMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.8A; 42W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8.8A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.8A; 42W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8.8A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| SPD09P06PLGBTMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -9.7A; 42W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -9.7A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -9.7A; 42W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -9.7A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2021 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 43+ | 1.67 EUR |
| 70+ | 1.03 EUR |
| 102+ | 0.71 EUR |
| 107+ | 0.67 EUR |
| SPD15P10PGBTMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Power dissipation: 128W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Power dissipation: 128W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
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