SPB20N60C3 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.7A; 208W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.7A
Power dissipation: 208W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.7A; 208W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.7A
Power dissipation: 208W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 945 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 16+ | 4.49 EUR |
| 21+ | 3.45 EUR |
| 22+ | 3.26 EUR |
| 250+ | 3.2 EUR |
| 1000+ | 3.13 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SPB20N60C3 INFINEON TECHNOLOGIES
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 20.7A; 208W; PG-TO263-3, Type of transistor: N-MOSFET, Technology: CoolMOS™, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 20.7A, Power dissipation: 208W, Case: PG-TO263-3, Gate-source voltage: ±20V, On-state resistance: 0.19Ω, Mounting: SMD, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SPB20N60C3 nach Preis ab 3.2 EUR bis 9.35 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SPB20N60C3 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20.7A; 208W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.7A Power dissipation: 208W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Kind of channel: enhanced |
auf Bestellung 945 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
SPB20N60C3 | Hersteller : Infineon Technologies |
 MOSFETs N-Ch 650V 20.7A D2PAK-2 CoolMOS C3 |
auf Bestellung 8602 Stücke: Lieferzeit 10-14 Tag (e) |
|