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SPD15P10PGBTMA1 Infineon Technologies
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Description: MOSFET P-CH 100V 15A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 10.6A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1.54mA
Supplier Device Package: PG-TO252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2500+ | 1.39 EUR |
5000+ | 1.34 EUR |
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Technische Details SPD15P10PGBTMA1 Infineon Technologies
Description: MOSFET P-CH 100V 15A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 240mOhm @ 10.6A, 10V, Power Dissipation (Max): 128W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1.54mA, Supplier Device Package: PG-TO252-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote SPD15P10PGBTMA1 nach Preis ab 1.18 EUR bis 3.08 EUR
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SPD15P10PGBTMA1 | Hersteller : Infineon Technologies |
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auf Bestellung 4705 Stücke: Lieferzeit 10-14 Tag (e) |
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SPD15P10PGBTMA1 | Hersteller : Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 10.6A, 10V Power Dissipation (Max): 128W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1.54mA Supplier Device Package: PG-TO252-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 9658 Stücke: Lieferzeit 10-14 Tag (e) |
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SPD15P10PGBTMA1 | Hersteller : INFINEON |
![]() tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: -100V rohsCompliant: YES Dauer-Drainstrom Id: -15A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Betriebsfrequenz, max.: -Hz Betriebsfrequenz, min.: -Hz euEccn: NLR Verlustleistung: 128W Bauform - Transistor: TO-252 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Betriebstemperatur, max.: 175°C |
auf Bestellung 2999 Stücke: Lieferzeit 14-21 Tag (e) |
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SPD15P10PGBTMA1 | Hersteller : Infineon Technologies |
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auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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SPD15P10PGBTMA1 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO252-3 Power dissipation: 128W Case: PG-TO252-3 Mounting: SMD Drain-source voltage: -100V Drain current: -15A On-state resistance: 0.24Ω Type of transistor: P-MOSFET Polarisation: unipolar Technology: SIPMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SPD15P10PGBTMA1 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO252-3 Power dissipation: 128W Case: PG-TO252-3 Mounting: SMD Drain-source voltage: -100V Drain current: -15A On-state resistance: 0.24Ω Type of transistor: P-MOSFET Polarisation: unipolar Technology: SIPMOS™ Kind of channel: enhanced Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |