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SPD15P10PGBTMA1

SPD15P10PGBTMA1 Infineon Technologies

SPD_P15P10P_Rev1.5.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42aa02743bc Hersteller: Infineon Technologies
Description: MOSFET P-CH 100V 15A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 10.6A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1.54mA
Supplier Device Package: PG-TO252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.39 EUR
5000+ 1.34 EUR
Mindestbestellmenge: 2500
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Produktbewertung abgeben

Technische Details SPD15P10PGBTMA1 Infineon Technologies

Description: MOSFET P-CH 100V 15A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 240mOhm @ 10.6A, 10V, Power Dissipation (Max): 128W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1.54mA, Supplier Device Package: PG-TO252-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V, Qualification: AEC-Q101.

Weitere Produktangebote SPD15P10PGBTMA1 nach Preis ab 1.18 EUR bis 3.08 EUR

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Preis ohne MwSt
SPD15P10PGBTMA1 SPD15P10PGBTMA1 Hersteller : Infineon Technologies Infineon_SPD15P10P_G_DS_v01_08_en-1732255.pdf MOSFETs P-Ch -100V 15A DPAK-2
auf Bestellung 4705 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.71 EUR
10+ 2.25 EUR
100+ 1.8 EUR
500+ 1.52 EUR
1000+ 1.29 EUR
2500+ 1.22 EUR
5000+ 1.18 EUR
Mindestbestellmenge: 2
SPD15P10PGBTMA1 SPD15P10PGBTMA1 Hersteller : Infineon Technologies SPD_P15P10P_Rev1.5.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42aa02743bc Description: MOSFET P-CH 100V 15A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 10.6A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1.54mA
Supplier Device Package: PG-TO252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 9658 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.08 EUR
10+ 2.56 EUR
100+ 2.04 EUR
500+ 1.73 EUR
1000+ 1.46 EUR
Mindestbestellmenge: 6
SPD15P10PGBTMA1 SPD15P10PGBTMA1 Hersteller : INFINEON INFNS19265-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: INFINEON - SPD15P10PGBTMA1 - HF-FET-Transistor, -100 V, -15 A, 128 W, TO-252
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: -100V
rohsCompliant: YES
Dauer-Drainstrom Id: -15A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Betriebsfrequenz, max.: -Hz
Betriebsfrequenz, min.: -Hz
euEccn: NLR
Verlustleistung: 128W
Bauform - Transistor: TO-252
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 175°C
auf Bestellung 2999 Stücke:
Lieferzeit 14-21 Tag (e)
SPD15P10PGBTMA1 SPD15P10PGBTMA1 Hersteller : Infineon Technologies spd15p10pg_rev1.8.pdffolderiddb3a304412b407950112b408e8c90004fileiddb3a304412b407950112b4.pdffolderiddb3a304412b407950112b4.pdf Trans MOSFET P-CH 100V 15A Automotive 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
SPD15P10PGBTMA1 SPD15P10PGBTMA1 Hersteller : INFINEON TECHNOLOGIES SPD15P10PGBTMA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO252-3
Power dissipation: 128W
Case: PG-TO252-3
Mounting: SMD
Drain-source voltage: -100V
Drain current: -15A
On-state resistance: 0.24Ω
Type of transistor: P-MOSFET
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SPD15P10PGBTMA1 SPD15P10PGBTMA1 Hersteller : INFINEON TECHNOLOGIES SPD15P10PGBTMA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO252-3
Power dissipation: 128W
Case: PG-TO252-3
Mounting: SMD
Drain-source voltage: -100V
Drain current: -15A
On-state resistance: 0.24Ω
Type of transistor: P-MOSFET
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar