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FDMS86350 ONSEMI fdms86350-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 130A; 156W; PQFN8
Kind of package: reel; tape
Drain-source voltage: 80V
Drain current: 130A
On-state resistance: 3.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 156W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PQFN8
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
FDMS86350ET80 ONSEMI fdms86350et80-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 140A; 187W; PQFN8
Kind of package: reel; tape
Drain-source voltage: 80V
Drain current: 140A
On-state resistance: 3.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 187W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PQFN8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMS86500DC ONSEMI fdms86500dc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 108A; Idm: 200A; 125W; Power56
Kind of package: reel; tape
Pulsed drain current: 200A
Power dissipation: 125W
Gate charge: 107nC
Polarisation: unipolar
Drain current: 108A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: Power56
On-state resistance: 3.7mΩ
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMS86500L ONSEMI fdms86500l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 799A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 799A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 165nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMS86520 ONSEMI fdms86520-d.pdf FDMS86520 SMD N channel transistors
Produkt ist nicht verfügbar
FDMS86520L ONSEMI fdms86520l-d.pdf FDMS86520L SMD N channel transistors
Produkt ist nicht verfügbar
FDMS86540 ONSEMI fdms86540-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 82A; Idm: 642A; 96W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 82A
Pulsed drain current: 642A
Power dissipation: 96W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMS86550 ONSEMI fdms86550-d.pdf FDMS86550 SMD N channel transistors
Produkt ist nicht verfügbar
FDMS86550ET60 ONSEMI fdms86550et60-d.pdf FDMS86550ET60 SMD N channel transistors
Produkt ist nicht verfügbar
FDMS8680 ONSEMI fdms8680-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; Idm: 100A; 50W; Power56
Drain-source voltage: 30V
Drain current: 35A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: reel; tape
Case: Power56
Gate charge: 26nC
Mounting: SMD
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMS8820 ONSEMI fdms8820-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 101A; Idm: 634A; 78W; Power56
Kind of package: reel; tape
Type of transistor: N-MOSFET
Power dissipation: 78W
Polarisation: unipolar
Gate charge: 88nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 634A
Mounting: SMD
Case: Power56
Drain-source voltage: 30V
Drain current: 101A
On-state resistance: 2.8mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMS8D8N15C ONSEMI fdms8d8n15c-d.pdf FDMS8D8N15C SMD N channel transistors
Produkt ist nicht verfügbar
FDMS9600S ONSEMI fdms9600s-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 32/30A; Idm: 60A; 2.5W
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 32/30A
Pulsed drain current: 60A
Power dissipation: 2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 13/8.3mΩ
Mounting: SMD
Gate charge: 13/29nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMS9620S ONSEMI fdms9620s-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 16/18A; Idm: 60A; 2.5W
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 16/18A
Pulsed drain current: 60A
Power dissipation: 2.5W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 32/22mΩ
Mounting: SMD
Gate charge: 14/25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMT1D3N08B ONSEMI fdmt1d3n08b-d.pdf FDMT1D3N08B SMD N channel transistors
Produkt ist nicht verfügbar
FDMT800100DC ONSEMI fdmt800100dc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 102A; Idm: 989A; 156W; DFNW8
Mounting: SMD
Drain-source voltage: 100V
Drain current: 102A
On-state resistance: 5.39mΩ
Type of transistor: N-MOSFET
Power dissipation: 156W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 111nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 989A
Case: DFNW8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMT800120DC ONSEMI fdmt800120dc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 81A; Idm: 767A; 156W; DFNW8
Kind of package: reel; tape
Gate charge: 107nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 767A
Mounting: SMD
Case: DFNW8
Drain-source voltage: 120V
Drain current: 81A
On-state resistance: 7.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 156W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMT800150DC ONSEMI fdmt800150dc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 62A; Idm: 561A; 156W; DFNW8
Mounting: SMD
Drain-source voltage: 150V
Drain current: 62A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 156W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 108nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 561A
Case: DFNW8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMT800152DC ONSEMI FAIR-S-A0002366048-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 45A; Idm: 413A; 113W; DFNW8
Mounting: SMD
Drain-source voltage: 150V
Drain current: 45A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Power dissipation: 113W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 83nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 413A
Case: DFNW8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMT80040DC ONSEMI fdmt80040dc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 265A; Idm: 2644A; 156W; DFNW8
Mounting: SMD
Drain-source voltage: 40V
Drain current: 265A
On-state resistance: 0.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 156W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 338nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 2644A
Case: DFNW8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMT80060DC ONSEMI fdmt80060dc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 184A; Idm: 1825A; 156W; DFNW8
Mounting: SMD
Drain-source voltage: 60V
Drain current: 184A
On-state resistance: 1.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 156W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 238nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1825A
Case: DFNW8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMT80080DC ONSEMI fdmt80080dc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 1453A; 156W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 160A
Pulsed drain current: 1453A
Power dissipation: 156W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 2.22mΩ
Mounting: SMD
Gate charge: 273nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDN302P FDN302P ONSEMI FDN302P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±12V
On-state resistance: 84mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2688 Stücke:
Lieferzeit 7-14 Tag (e)
239+0.3 EUR
264+ 0.27 EUR
340+ 0.21 EUR
360+ 0.2 EUR
Mindestbestellmenge: 239
FDN304P FDN304P ONSEMI FDN304P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 0.5W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Gate charge: 20nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: -20V
Drain current: -2.4A
On-state resistance: 0.1Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3540 Stücke:
Lieferzeit 7-14 Tag (e)
109+0.66 EUR
154+ 0.46 EUR
219+ 0.33 EUR
232+ 0.31 EUR
Mindestbestellmenge: 109
FDN304PZ FDN304PZ ONSEMI FDN304PZ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 0.5W; SuperSOT-3
Mounting: SMD
Case: SuperSOT-3
Kind of package: reel; tape
Features of semiconductor devices: logic level
Gate charge: 20nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: -20V
Drain current: -2.4A
On-state resistance: 0.1Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2990 Stücke:
Lieferzeit 7-14 Tag (e)
103+0.7 EUR
150+ 0.48 EUR
214+ 0.33 EUR
227+ 0.32 EUR
Mindestbestellmenge: 103
FDN306P FDN306P ONSEMI FDN306P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2.6A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.6A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3610 Stücke:
Lieferzeit 7-14 Tag (e)
132+0.54 EUR
171+ 0.42 EUR
203+ 0.35 EUR
281+ 0.25 EUR
298+ 0.24 EUR
1000+ 0.23 EUR
Mindestbestellmenge: 132
FDN327N FDN327N ONSEMI FDN327N.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2240 Stücke:
Lieferzeit 7-14 Tag (e)
239+0.3 EUR
286+ 0.25 EUR
317+ 0.23 EUR
368+ 0.19 EUR
391+ 0.18 EUR
Mindestbestellmenge: 239
FDN335N FDN335N ONSEMI FDN335N-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.7A; 500mW; SuperSOT-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.7A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1707 Stücke:
Lieferzeit 7-14 Tag (e)
143+0.5 EUR
233+ 0.31 EUR
306+ 0.23 EUR
324+ 0.22 EUR
Mindestbestellmenge: 143
FDN336P FDN336P ONSEMI FDN336P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.3A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.32Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2533 Stücke:
Lieferzeit 7-14 Tag (e)
109+0.66 EUR
211+ 0.34 EUR
304+ 0.24 EUR
321+ 0.22 EUR
Mindestbestellmenge: 109
FDN337N FDN337N ONSEMI FDN337N.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.2A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
FDN338P FDN338P ONSEMI FDN338P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.6A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.6A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.165Ω
Mounting: SMD
Gate charge: 6.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1420 Stücke:
Lieferzeit 7-14 Tag (e)
141+0.51 EUR
191+ 0.38 EUR
274+ 0.26 EUR
290+ 0.25 EUR
Mindestbestellmenge: 141
FDN339AN FDN339AN ONSEMI FDN339AN-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 61mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5513 Stücke:
Lieferzeit 7-14 Tag (e)
111+0.65 EUR
186+ 0.39 EUR
243+ 0.29 EUR
257+ 0.28 EUR
Mindestbestellmenge: 111
FDN340P FDN340P ONSEMI FDN340P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -10A; 0.5W
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -10A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2605 Stücke:
Lieferzeit 7-14 Tag (e)
132+0.54 EUR
179+ 0.4 EUR
234+ 0.31 EUR
404+ 0.18 EUR
428+ 0.17 EUR
3000+ 0.16 EUR
Mindestbestellmenge: 132
FDN352AP FDN352AP ONSEMI FDN352AP.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.3A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.3A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±25V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 1.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 5 Stücke
auf Bestellung 4879 Stücke:
Lieferzeit 7-14 Tag (e)
250+0.29 EUR
280+ 0.26 EUR
360+ 0.2 EUR
380+ 0.19 EUR
Mindestbestellmenge: 250
FDN357N FDN357N ONSEMI FDN357N.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; 0.5W; SuperSOT-3
Mounting: SMD
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Case: SuperSOT-3
Features of semiconductor devices: logic level
Gate charge: 5.9nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 1.9A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2045 Stücke:
Lieferzeit 7-14 Tag (e)
128+0.56 EUR
150+ 0.48 EUR
216+ 0.33 EUR
229+ 0.31 EUR
Mindestbestellmenge: 128
FDN358P FDN358P ONSEMI FDN358P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 5.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1057 Stücke:
Lieferzeit 7-14 Tag (e)
148+0.49 EUR
213+ 0.34 EUR
235+ 0.3 EUR
285+ 0.25 EUR
300+ 0.24 EUR
1000+ 0.23 EUR
Mindestbestellmenge: 148
FDN359AN FDN359AN ONSEMI FDN359AN.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3035 Stücke:
Lieferzeit 7-14 Tag (e)
205+0.35 EUR
230+ 0.31 EUR
300+ 0.24 EUR
320+ 0.23 EUR
Mindestbestellmenge: 205
FDN359BN ONSEMI fdn359bn-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
FDN360P FDN360P ONSEMI FDN360P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 136mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 5 Stücke
auf Bestellung 4474 Stücke:
Lieferzeit 7-14 Tag (e)
155+0.47 EUR
230+ 0.31 EUR
335+ 0.21 EUR
355+ 0.2 EUR
Mindestbestellmenge: 155
FDN537N FDN537N ONSEMI fdn537n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 25A; 1.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 25A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2956 Stücke:
Lieferzeit 7-14 Tag (e)
73+0.99 EUR
107+ 0.67 EUR
142+ 0.5 EUR
171+ 0.42 EUR
178+ 0.4 EUR
500+ 0.38 EUR
Mindestbestellmenge: 73
FDN5630 FDN5630 ONSEMI FDN5630.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; 0.5W; SuperSOT-3
Mounting: SMD
Drain-source voltage: 60V
Drain current: 1.7A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: logic level
Gate charge: 10nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SuperSOT-3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4575 Stücke:
Lieferzeit 7-14 Tag (e)
132+0.54 EUR
169+ 0.42 EUR
358+ 0.2 EUR
379+ 0.19 EUR
Mindestbestellmenge: 132
FDN5632N-F085 ONSEMI fdn5632n-f085-d.pdf FDN5632N-F085 SMD N channel transistors
auf Bestellung 1885 Stücke:
Lieferzeit 7-14 Tag (e)
122+0.59 EUR
176+ 0.41 EUR
186+ 0.39 EUR
3000+ 0.38 EUR
Mindestbestellmenge: 122
FDN8601 ONSEMI fdn8601-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; 1.5W; SuperSOT-3
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 2.7A
On-state resistance: 183mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.5W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SuperSOT-3
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDN86265P ONSEMI fdn86265p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -0.8A; 1.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -0.8A
Power dissipation: 1.5W
Case: SuperSOT-3
Gate-source voltage: ±25V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDP030N06 ONSEMI fdp030n06-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 138A; 205W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 138A
Power dissipation: 205W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDP038AN06A0 FDP038AN06A0 ONSEMI fdp038an06a0-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 310W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 310W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 76 Stücke:
Lieferzeit 7-14 Tag (e)
16+4.56 EUR
18+ 4.1 EUR
22+ 3.29 EUR
24+ 3.1 EUR
250+ 3.05 EUR
Mindestbestellmenge: 16
FDP047AN08A0 FDP047AN08A0 ONSEMI fdh047an08a0-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 310W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 310W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
5+14.3 EUR
6+ 11.91 EUR
17+ 4.2 EUR
Mindestbestellmenge: 5
FDP047N08-F102 FDP047N08-F102 ONSEMI fdp047n08jp-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 116A; Idm: 656A; 168W; TO220-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 116A
Pulsed drain current: 656A
Power dissipation: 168W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 24 Stücke:
Lieferzeit 7-14 Tag (e)
24+2.97 EUR
250+ 1.97 EUR
Mindestbestellmenge: 24
FDP050AN06A0 FDP050AN06A0 ONSEMI FDB050AN06A0.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; 245W; TO220AB
Technology: PowerTrench®
Case: TO220AB
Mounting: THT
On-state resistance: 11mΩ
Kind of package: tube
Power dissipation: 245W
Gate charge: 80nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 18A
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDP060AN08A0 FDP060AN08A0 ONSEMI fdp060an08a0-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 255W; TO220-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 255W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
20+3.6 EUR
23+ 3.23 EUR
29+ 2.47 EUR
31+ 2.35 EUR
250+ 2.3 EUR
Mindestbestellmenge: 20
FDP075N15A-F102 FDP075N15A-F102 ONSEMI FDP075N15A-F102.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 92A; 333W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 92A
Power dissipation: 333W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 38 Stücke:
Lieferzeit 7-14 Tag (e)
8+9.12 EUR
12+ 6.03 EUR
Mindestbestellmenge: 8
FDP083N15A-F102 FDP083N15A-F102 ONSEMI fdp083n15a-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 294W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 294W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)
13+5.63 EUR
17+ 4.35 EUR
18+ 4.1 EUR
100+ 4.09 EUR
250+ 3.93 EUR
Mindestbestellmenge: 13
FDP16AN08A0 FDP16AN08A0 ONSEMI FAIRS45681-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 44A; 135W; TO220-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 44A
Power dissipation: 135W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDP18N50 FDP18N50 ONSEMI FDP18N50.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 235W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 235W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)
8+8.94 EUR
19+ 3.76 EUR
50+ 2.3 EUR
250+ 2.22 EUR
Mindestbestellmenge: 8
FDP20N50F FDP20N50F ONSEMI ONSM-S-A0003584205-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; Idm: 80A; 250W; TO220-3
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.9A
Pulsed drain current: 80A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDP22N50N FDP22N50N ONSEMI FDP22N50N.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13.2A; 312.5W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13.2A
Power dissipation: 312.5W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 46 Stücke:
Lieferzeit 7-14 Tag (e)
17+4.42 EUR
23+ 3.2 EUR
24+ 3.03 EUR
250+ 2.92 EUR
Mindestbestellmenge: 17
FDP2532 FDP2532 ONSEMI FDX2532-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 56A; 310W; TO220AB
Mounting: THT
Drain-source voltage: 150V
Kind of package: tube
Case: TO220AB
Gate charge: 107nC
Technology: PowerTrench®
Kind of channel: enhanced
Drain current: 56A
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Type of transistor: N-MOSFET
Power dissipation: 310W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 48 Stücke:
Lieferzeit 7-14 Tag (e)
17+4.42 EUR
23+ 3.25 EUR
24+ 3.06 EUR
Mindestbestellmenge: 17
FDP2552 FDP2552 ONSEMI fdp2552-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 26A; 150W; TO220AB
Mounting: THT
Drain-source voltage: 150V
Kind of package: tube
Case: TO220AB
Kind of channel: enhanced
Drain current: 26A
Gate-source voltage: ±20V
On-state resistance: 97mΩ
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDP2572 FDP2572 ONSEMI FAIRS45683-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 20A; 135W; TO220AB
Mounting: THT
Drain-source voltage: 150V
Kind of package: tube
Case: TO220AB
Gate charge: 34nC
Kind of channel: enhanced
Drain current: 20A
Gate-source voltage: ±20V
On-state resistance: 146mΩ
Type of transistor: N-MOSFET
Power dissipation: 135W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDP2614 FDP2614 ONSEMI fdp2614-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 39.3A; 260W; TO220-3
Mounting: THT
Case: TO220-3
Drain-source voltage: 200V
Drain current: 39.3A
On-state resistance: 27mΩ
Type of transistor: N-MOSFET
Power dissipation: 260W
Polarisation: unipolar
Kind of package: tube
Gate charge: 99nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 82 Stücke:
Lieferzeit 7-14 Tag (e)
12+5.99 EUR
14+ 5.39 EUR
17+ 4.3 EUR
18+ 4.06 EUR
250+ 3.92 EUR
Mindestbestellmenge: 12
FDMS86350 fdms86350-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 130A; 156W; PQFN8
Kind of package: reel; tape
Drain-source voltage: 80V
Drain current: 130A
On-state resistance: 3.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 156W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PQFN8
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
FDMS86350ET80 fdms86350et80-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 140A; 187W; PQFN8
Kind of package: reel; tape
Drain-source voltage: 80V
Drain current: 140A
On-state resistance: 3.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 187W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PQFN8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMS86500DC fdms86500dc-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 108A; Idm: 200A; 125W; Power56
Kind of package: reel; tape
Pulsed drain current: 200A
Power dissipation: 125W
Gate charge: 107nC
Polarisation: unipolar
Drain current: 108A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: Power56
On-state resistance: 3.7mΩ
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMS86500L fdms86500l-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 799A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 799A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 165nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMS86520 fdms86520-d.pdf
Hersteller: ONSEMI
FDMS86520 SMD N channel transistors
Produkt ist nicht verfügbar
FDMS86520L fdms86520l-d.pdf
Hersteller: ONSEMI
FDMS86520L SMD N channel transistors
Produkt ist nicht verfügbar
FDMS86540 fdms86540-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 82A; Idm: 642A; 96W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 82A
Pulsed drain current: 642A
Power dissipation: 96W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMS86550 fdms86550-d.pdf
Hersteller: ONSEMI
FDMS86550 SMD N channel transistors
Produkt ist nicht verfügbar
FDMS86550ET60 fdms86550et60-d.pdf
Hersteller: ONSEMI
FDMS86550ET60 SMD N channel transistors
Produkt ist nicht verfügbar
FDMS8680 fdms8680-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; Idm: 100A; 50W; Power56
Drain-source voltage: 30V
Drain current: 35A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: reel; tape
Case: Power56
Gate charge: 26nC
Mounting: SMD
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMS8820 fdms8820-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 101A; Idm: 634A; 78W; Power56
Kind of package: reel; tape
Type of transistor: N-MOSFET
Power dissipation: 78W
Polarisation: unipolar
Gate charge: 88nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 634A
Mounting: SMD
Case: Power56
Drain-source voltage: 30V
Drain current: 101A
On-state resistance: 2.8mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMS8D8N15C fdms8d8n15c-d.pdf
Hersteller: ONSEMI
FDMS8D8N15C SMD N channel transistors
Produkt ist nicht verfügbar
FDMS9600S fdms9600s-d.pdf
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 32/30A; Idm: 60A; 2.5W
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 32/30A
Pulsed drain current: 60A
Power dissipation: 2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 13/8.3mΩ
Mounting: SMD
Gate charge: 13/29nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMS9620S fdms9620s-d.pdf
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 16/18A; Idm: 60A; 2.5W
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 16/18A
Pulsed drain current: 60A
Power dissipation: 2.5W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 32/22mΩ
Mounting: SMD
Gate charge: 14/25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMT1D3N08B fdmt1d3n08b-d.pdf
Hersteller: ONSEMI
FDMT1D3N08B SMD N channel transistors
Produkt ist nicht verfügbar
FDMT800100DC fdmt800100dc-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 102A; Idm: 989A; 156W; DFNW8
Mounting: SMD
Drain-source voltage: 100V
Drain current: 102A
On-state resistance: 5.39mΩ
Type of transistor: N-MOSFET
Power dissipation: 156W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 111nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 989A
Case: DFNW8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMT800120DC fdmt800120dc-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 81A; Idm: 767A; 156W; DFNW8
Kind of package: reel; tape
Gate charge: 107nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 767A
Mounting: SMD
Case: DFNW8
Drain-source voltage: 120V
Drain current: 81A
On-state resistance: 7.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 156W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMT800150DC fdmt800150dc-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 62A; Idm: 561A; 156W; DFNW8
Mounting: SMD
Drain-source voltage: 150V
Drain current: 62A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
Power dissipation: 156W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 108nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 561A
Case: DFNW8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMT800152DC FAIR-S-A0002366048-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 45A; Idm: 413A; 113W; DFNW8
Mounting: SMD
Drain-source voltage: 150V
Drain current: 45A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Power dissipation: 113W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 83nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 413A
Case: DFNW8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMT80040DC fdmt80040dc-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 265A; Idm: 2644A; 156W; DFNW8
Mounting: SMD
Drain-source voltage: 40V
Drain current: 265A
On-state resistance: 0.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 156W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 338nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 2644A
Case: DFNW8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMT80060DC fdmt80060dc-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 184A; Idm: 1825A; 156W; DFNW8
Mounting: SMD
Drain-source voltage: 60V
Drain current: 184A
On-state resistance: 1.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 156W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 238nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1825A
Case: DFNW8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMT80080DC fdmt80080dc-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 160A; Idm: 1453A; 156W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 160A
Pulsed drain current: 1453A
Power dissipation: 156W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 2.22mΩ
Mounting: SMD
Gate charge: 273nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDN302P FDN302P.pdf
FDN302P
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±12V
On-state resistance: 84mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2688 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
239+0.3 EUR
264+ 0.27 EUR
340+ 0.21 EUR
360+ 0.2 EUR
Mindestbestellmenge: 239
FDN304P FDN304P.pdf
FDN304P
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 0.5W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Gate charge: 20nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: -20V
Drain current: -2.4A
On-state resistance: 0.1Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3540 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
109+0.66 EUR
154+ 0.46 EUR
219+ 0.33 EUR
232+ 0.31 EUR
Mindestbestellmenge: 109
FDN304PZ FDN304PZ.pdf
FDN304PZ
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 0.5W; SuperSOT-3
Mounting: SMD
Case: SuperSOT-3
Kind of package: reel; tape
Features of semiconductor devices: logic level
Gate charge: 20nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: -20V
Drain current: -2.4A
On-state resistance: 0.1Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2990 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
103+0.7 EUR
150+ 0.48 EUR
214+ 0.33 EUR
227+ 0.32 EUR
Mindestbestellmenge: 103
FDN306P FDN306P.pdf
FDN306P
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2.6A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.6A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3610 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
132+0.54 EUR
171+ 0.42 EUR
203+ 0.35 EUR
281+ 0.25 EUR
298+ 0.24 EUR
1000+ 0.23 EUR
Mindestbestellmenge: 132
FDN327N FDN327N.pdf
FDN327N
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2240 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
239+0.3 EUR
286+ 0.25 EUR
317+ 0.23 EUR
368+ 0.19 EUR
391+ 0.18 EUR
Mindestbestellmenge: 239
FDN335N FDN335N-DTE.pdf
FDN335N
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.7A; 500mW; SuperSOT-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.7A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1707 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
143+0.5 EUR
233+ 0.31 EUR
306+ 0.23 EUR
324+ 0.22 EUR
Mindestbestellmenge: 143
FDN336P FDN336P.pdf
FDN336P
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.3A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.32Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2533 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
109+0.66 EUR
211+ 0.34 EUR
304+ 0.24 EUR
321+ 0.22 EUR
Mindestbestellmenge: 109
FDN337N FDN337N.pdf
FDN337N
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.2A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
FDN338P FDN338P.pdf
FDN338P
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.6A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.6A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.165Ω
Mounting: SMD
Gate charge: 6.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1420 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
141+0.51 EUR
191+ 0.38 EUR
274+ 0.26 EUR
290+ 0.25 EUR
Mindestbestellmenge: 141
FDN339AN FDN339AN-DTE.pdf
FDN339AN
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 61mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5513 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
111+0.65 EUR
186+ 0.39 EUR
243+ 0.29 EUR
257+ 0.28 EUR
Mindestbestellmenge: 111
FDN340P FDN340P.pdf
FDN340P
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -10A; 0.5W
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -10A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2605 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
132+0.54 EUR
179+ 0.4 EUR
234+ 0.31 EUR
404+ 0.18 EUR
428+ 0.17 EUR
3000+ 0.16 EUR
Mindestbestellmenge: 132
FDN352AP FDN352AP.pdf
FDN352AP
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.3A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.3A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±25V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 1.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 5 Stücke
auf Bestellung 4879 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
250+0.29 EUR
280+ 0.26 EUR
360+ 0.2 EUR
380+ 0.19 EUR
Mindestbestellmenge: 250
FDN357N FDN357N.pdf
FDN357N
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; 0.5W; SuperSOT-3
Mounting: SMD
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Case: SuperSOT-3
Features of semiconductor devices: logic level
Gate charge: 5.9nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 1.9A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2045 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
128+0.56 EUR
150+ 0.48 EUR
216+ 0.33 EUR
229+ 0.31 EUR
Mindestbestellmenge: 128
FDN358P FDN358P.pdf
FDN358P
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 5.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1057 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
148+0.49 EUR
213+ 0.34 EUR
235+ 0.3 EUR
285+ 0.25 EUR
300+ 0.24 EUR
1000+ 0.23 EUR
Mindestbestellmenge: 148
FDN359AN FDN359AN.pdf
FDN359AN
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3035 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
205+0.35 EUR
230+ 0.31 EUR
300+ 0.24 EUR
320+ 0.23 EUR
Mindestbestellmenge: 205
FDN359BN fdn359bn-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.7A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
FDN360P FDN360P.pdf
FDN360P
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 136mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 5 Stücke
auf Bestellung 4474 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
155+0.47 EUR
230+ 0.31 EUR
335+ 0.21 EUR
355+ 0.2 EUR
Mindestbestellmenge: 155
FDN537N fdn537n-d.pdf
FDN537N
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 25A; 1.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 25A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2956 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
73+0.99 EUR
107+ 0.67 EUR
142+ 0.5 EUR
171+ 0.42 EUR
178+ 0.4 EUR
500+ 0.38 EUR
Mindestbestellmenge: 73
FDN5630 FDN5630.pdf
FDN5630
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; 0.5W; SuperSOT-3
Mounting: SMD
Drain-source voltage: 60V
Drain current: 1.7A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: logic level
Gate charge: 10nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SuperSOT-3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4575 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
132+0.54 EUR
169+ 0.42 EUR
358+ 0.2 EUR
379+ 0.19 EUR
Mindestbestellmenge: 132
FDN5632N-F085 fdn5632n-f085-d.pdf
Hersteller: ONSEMI
FDN5632N-F085 SMD N channel transistors
auf Bestellung 1885 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
122+0.59 EUR
176+ 0.41 EUR
186+ 0.39 EUR
3000+ 0.38 EUR
Mindestbestellmenge: 122
FDN8601 fdn8601-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; 1.5W; SuperSOT-3
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 2.7A
On-state resistance: 183mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.5W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SuperSOT-3
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDN86265P fdn86265p-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -0.8A; 1.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -0.8A
Power dissipation: 1.5W
Case: SuperSOT-3
Gate-source voltage: ±25V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDP030N06 fdp030n06-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 138A; 205W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 138A
Power dissipation: 205W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDP038AN06A0 fdp038an06a0-d.pdf
FDP038AN06A0
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 310W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 310W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 76 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
16+4.56 EUR
18+ 4.1 EUR
22+ 3.29 EUR
24+ 3.1 EUR
250+ 3.05 EUR
Mindestbestellmenge: 16
FDP047AN08A0 fdh047an08a0-d.pdf
FDP047AN08A0
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 310W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 310W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
5+14.3 EUR
6+ 11.91 EUR
17+ 4.2 EUR
Mindestbestellmenge: 5
FDP047N08-F102 fdp047n08jp-d.pdf
FDP047N08-F102
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 116A; Idm: 656A; 168W; TO220-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 116A
Pulsed drain current: 656A
Power dissipation: 168W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 24 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
24+2.97 EUR
250+ 1.97 EUR
Mindestbestellmenge: 24
FDP050AN06A0 FDB050AN06A0.pdf
FDP050AN06A0
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; 245W; TO220AB
Technology: PowerTrench®
Case: TO220AB
Mounting: THT
On-state resistance: 11mΩ
Kind of package: tube
Power dissipation: 245W
Gate charge: 80nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 18A
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDP060AN08A0 fdp060an08a0-d.pdf
FDP060AN08A0
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 255W; TO220-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 255W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
20+3.6 EUR
23+ 3.23 EUR
29+ 2.47 EUR
31+ 2.35 EUR
250+ 2.3 EUR
Mindestbestellmenge: 20
FDP075N15A-F102 FDP075N15A-F102.pdf
FDP075N15A-F102
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 92A; 333W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 92A
Power dissipation: 333W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 38 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
8+9.12 EUR
12+ 6.03 EUR
Mindestbestellmenge: 8
FDP083N15A-F102 fdp083n15a-d.pdf
FDP083N15A-F102
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 294W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 294W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
13+5.63 EUR
17+ 4.35 EUR
18+ 4.1 EUR
100+ 4.09 EUR
250+ 3.93 EUR
Mindestbestellmenge: 13
FDP16AN08A0 FAIRS45681-1.pdf?t.download=true&u=5oefqw
FDP16AN08A0
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 44A; 135W; TO220-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 44A
Power dissipation: 135W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDP18N50 FDP18N50.pdf
FDP18N50
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 235W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 235W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
8+8.94 EUR
19+ 3.76 EUR
50+ 2.3 EUR
250+ 2.22 EUR
Mindestbestellmenge: 8
FDP20N50F ONSM-S-A0003584205-1.pdf?t.download=true&u=5oefqw
FDP20N50F
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; Idm: 80A; 250W; TO220-3
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.9A
Pulsed drain current: 80A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDP22N50N FDP22N50N.pdf
FDP22N50N
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13.2A; 312.5W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13.2A
Power dissipation: 312.5W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 46 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
17+4.42 EUR
23+ 3.2 EUR
24+ 3.03 EUR
250+ 2.92 EUR
Mindestbestellmenge: 17
FDP2532 FDX2532-DTE.pdf
FDP2532
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 56A; 310W; TO220AB
Mounting: THT
Drain-source voltage: 150V
Kind of package: tube
Case: TO220AB
Gate charge: 107nC
Technology: PowerTrench®
Kind of channel: enhanced
Drain current: 56A
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Type of transistor: N-MOSFET
Power dissipation: 310W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 48 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
17+4.42 EUR
23+ 3.25 EUR
24+ 3.06 EUR
Mindestbestellmenge: 17
FDP2552 fdp2552-d.pdf
FDP2552
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 26A; 150W; TO220AB
Mounting: THT
Drain-source voltage: 150V
Kind of package: tube
Case: TO220AB
Kind of channel: enhanced
Drain current: 26A
Gate-source voltage: ±20V
On-state resistance: 97mΩ
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDP2572 FAIRS45683-1.pdf?t.download=true&u=5oefqw
FDP2572
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 20A; 135W; TO220AB
Mounting: THT
Drain-source voltage: 150V
Kind of package: tube
Case: TO220AB
Gate charge: 34nC
Kind of channel: enhanced
Drain current: 20A
Gate-source voltage: ±20V
On-state resistance: 146mΩ
Type of transistor: N-MOSFET
Power dissipation: 135W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDP2614 fdp2614-d.pdf
FDP2614
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 39.3A; 260W; TO220-3
Mounting: THT
Case: TO220-3
Drain-source voltage: 200V
Drain current: 39.3A
On-state resistance: 27mΩ
Type of transistor: N-MOSFET
Power dissipation: 260W
Polarisation: unipolar
Kind of package: tube
Gate charge: 99nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 82 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
12+5.99 EUR
14+ 5.39 EUR
17+ 4.3 EUR
18+ 4.06 EUR
250+ 3.92 EUR
Mindestbestellmenge: 12
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