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FDG6322C FDG6322C ONSEMI FDG6322C.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V
Case: SC70-6
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.3W
Gate charge: 0.4/1.5nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 0.22/0.41A
Kind of channel: enhanced
Drain-source voltage: 25/-25V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
On-state resistance: 7/1.9Ω
Gate-source voltage: ±8/±8V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2863 Stücke:
Lieferzeit 7-14 Tag (e)
118+0.61 EUR
200+ 0.36 EUR
285+ 0.25 EUR
302+ 0.24 EUR
Mindestbestellmenge: 118
FDG6335N ONSEMI fdg6335n-d.pdf FDG6335N Multi channel transistors
auf Bestellung 1977 Stücke:
Lieferzeit 7-14 Tag (e)
169+0.42 EUR
233+ 0.31 EUR
247+ 0.29 EUR
Mindestbestellmenge: 169
FDG8850NZ FDG8850NZ ONSEMI FDG8850NZ.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.75A; 0.36W
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 0.75A
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.36W
Polarisation: unipolar
Gate charge: 1.44nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±12V
Mounting: SMD
Case: SC70-6; SC88; SOT363
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDH047AN08A0 FDH047AN08A0 ONSEMI fdh047an08a0-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 310W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 310W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 138nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDH055N15A FDH055N15A ONSEMI fdh055n15a-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 118A; 429W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 118A
Power dissipation: 429W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
7+10.37 EUR
11+ 6.84 EUR
12+ 6.46 EUR
Mindestbestellmenge: 7
FDH210N08 FDH210N08 ONSEMI fdh210n08-d.pdf ONSM-S-A0003586586-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 132A; Idm: 840A; 462W; TO247
Mounting: THT
Pulsed drain current: 840A
Power dissipation: 462W
Gate charge: 301nC
Polarisation: unipolar
Drain current: 132A
Kind of channel: enhanced
Drain-source voltage: 75V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO247
On-state resistance: 5.5mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDH333 ONSEMI ONSM-S-A0003585186-1.pdf?t.download=true&u=5oefqw FDH333 THT universal diodes
auf Bestellung 3472 Stücke:
Lieferzeit 7-14 Tag (e)
173+0.41 EUR
1214+ 0.059 EUR
1283+ 0.056 EUR
Mindestbestellmenge: 173
FDH3632 ONSEMI fdp3632-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 800mA; 310W; TO247
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.8A
Power dissipation: 310W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDH44N50 FDH44N50 ONSEMI FDH44N50.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 750W; TO247
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 750W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDL100N50F FDL100N50F ONSEMI FDL100N50F.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 100A; 2500W; TO264
Drain-source voltage: 500V
Drain current: 100A
Case: TO264
Polarisation: unipolar
On-state resistance: 55mΩ
Power dissipation: 2.5kW
Technology: UniFET™
Kind of channel: enhanced
Gate charge: 238nC
Gate-source voltage: ±30V
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDLL300A ONSEMI ONSM-S-A0003585186-1.pdf?t.download=true&u=5oefqw FDLL300A SMD universal diodes
auf Bestellung 548 Stücke:
Lieferzeit 7-14 Tag (e)
509+0.14 EUR
548+ 0.13 EUR
729+ 0.099 EUR
2500+ 0.057 EUR
Mindestbestellmenge: 509
FDLL4148 FDLL4148 ONSEMI 1N91x_1N4x48.PDF Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOD80; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD80
Max. forward voltage: 1V
Max. load current: 0.4A
Max. forward impulse current: 1A
Power dissipation: 0.5W
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19839 Stücke:
Lieferzeit 7-14 Tag (e)
643+0.11 EUR
981+ 0.073 EUR
1507+ 0.047 EUR
1832+ 0.039 EUR
2959+ 0.024 EUR
3290+ 0.022 EUR
4762+ 0.015 EUR
Mindestbestellmenge: 643
FDLL4148-D87Z ONSEMI 1n914-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOD80; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD80
Max. forward voltage: 1V
Max. load current: 0.4A
Max. forward impulse current: 1A
Power dissipation: 0.5W
Kind of package: reel; tape
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
FDLL4448 FDLL4448 ONSEMI 1n914-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOD80; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD80
Max. forward voltage: 1V
Max. load current: 0.4A
Max. forward impulse current: 1A
Power dissipation: 0.5W
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDLL914 ONSEMI 1n914-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOD80; Ufmax: 1V; Ifsm: 1A
Semiconductor structure: single diode
Max. off-state voltage: 100V
Load current: 0.3A
Case: SOD80
Max. forward voltage: 1V
Max. forward impulse current: 1A
Mounting: SMD
Max. load current: 0.4A
Kind of package: reel; tape
Power dissipation: 0.5W
Type of diode: switching
Reverse recovery time: 4ns
Anzahl je Verpackung: 25 Stücke
Produkt ist nicht verfügbar
FDM3622 ONSEMI fdm3622-d.pdf FAIR-S-A0002365655-1.pdf?t.download=true&u=5oefqw FDM3622 SMD N channel transistors
Produkt ist nicht verfügbar
FDMA037N08LC ONSEMI fdma037n08lc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 6A; Idm: 55A; 2.4W; WDFN6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 6A
Pulsed drain current: 55A
Power dissipation: 2.4W
Case: WDFN6
Gate-source voltage: ±20V
On-state resistance: 61mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMA1023PZ
+1
 		FDMA1023PZ ONSEMI FDMA1023PZ.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.7A; 1.5W; MicroFET
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.7A
Power dissipation: 1.5W
Case: MicroFET
Gate-source voltage: ±8V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
FDMA1024NZ ONSEMI fdma1024nz-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 6A; 1.4W; WDFN6
Mounting: SMD
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7.3nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 6A
Case: WDFN6
Drain-source voltage: 20V
Drain current: 5A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMA1027P ONSEMI FDMA1027P.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3A; Idm: -6A; MicroFET
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Pulsed drain current: -6A
Case: MicroFET
Gate-source voltage: ±8V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMA1028NZ
+1
 		FDMA1028NZ ONSEMI FDMA1028NZ.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.7A; 1.4W; MicroFET
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.7A
Power dissipation: 1.4W
Case: MicroFET
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
FDMA1029PZ ONSEMI fdma1029pz-d.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.1A; Idm: -6A; 1.4W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Pulsed drain current: -6A
Power dissipation: 1.4W
Case: MicroFET
Gate-source voltage: ±12V
On-state resistance: 141mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMA2002NZ ONSEMI fdma2002nz-d.pdf FDMA2002NZ Multi channel transistors
Produkt ist nicht verfügbar
FDMA291P
+1
 		FDMA291P ONSEMI FDMA291P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.6A; 2.4W; MicroFET
Mounting: SMD
Power dissipation: 2.4W
Gate charge: 14nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -6.6A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: MicroFET
On-state resistance: 98mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMA3023PZ ONSEMI fdma3023pz-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; 1.4W; WDFN6
Drain-source voltage: -30V
Drain current: -2.9A
On-state resistance: 0.14Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: WDFN6
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMA410NZ ONSEMI fdma410nz-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9.5A; 2.4W; WDFN6
Mounting: SMD
Power dissipation: 2.4W
Polarisation: unipolar
Drain current: 9.5A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: WDFN6
On-state resistance: 32mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMA420NZ ONSEMI FAIRS47283-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.7A; Idm: 24A; 2.4W; WDFN6
Mounting: SMD
Case: WDFN6
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 5.7A
On-state resistance: 44mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 24A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMA430NZ FDMA430NZ ONSEMI FDMA430NZ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 2.4W; MicroFET
Mounting: SMD
Power dissipation: 2.4W
Gate charge: 11nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 5A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: MicroFET
On-state resistance: 61mΩ
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
FDMA507PZ
+1
 		FDMA507PZ ONSEMI FDMA507PZ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.8A; 2.4W; MicroFET
Case: MicroFET
Mounting: SMD
Kind of package: reel; tape
Drain current: -7.8A
On-state resistance: 35mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Gate charge: 42nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: -20V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
FDMA530PZ FDMA530PZ ONSEMI FDMA530PZ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.8A; 2.4W; MicroFET
Kind of package: reel; tape
Type of transistor: P-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Gate charge: 11nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±25V
Mounting: SMD
Case: MicroFET
Drain-source voltage: -30V
Drain current: -6.8A
On-state resistance: 65mΩ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 57 Stücke:
Lieferzeit 7-14 Tag (e)
49+1.47 EUR
57+ 1.26 EUR
75+ 0.96 EUR
Mindestbestellmenge: 49
FDMA6023PZT
+1
 		FDMA6023PZT ONSEMI FDMA6023PZT.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.6A; 1.4W; MicroFET
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.4W
Polarisation: unipolar
Case: MicroFET
Gate charge: 17nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: -20V
Drain current: -3.6A
On-state resistance: 0.17Ω
Type of transistor: P-MOSFET x2
Anzahl je Verpackung: 1 Stücke
auf Bestellung 338 Stücke:
Lieferzeit 7-14 Tag (e)
54+1.33 EUR
97+ 0.74 EUR
107+ 0.67 EUR
130+ 0.55 EUR
138+ 0.52 EUR
Mindestbestellmenge: 54
FDMA7630 ONSEMI fdma7630-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 24A; 2.4W; MicroFET
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11A
Pulsed drain current: 24A
Power dissipation: 2.4W
Case: MicroFET
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMA7672 ONSEMI fdma7672-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 24A; 2.4W; MicroFET
Mounting: SMD
Pulsed drain current: 24A
Power dissipation: 2.4W
Gate charge: 13nC
Polarisation: unipolar
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: MicroFET
On-state resistance: 32mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMA8051L ONSEMI fdma8051l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10A; Idm: 80A; 2.4W; MicroFET
Case: MicroFET
Mounting: SMD
Drain current: 10A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 19mΩ
Pulsed drain current: 80A
Power dissipation: 2.4W
Gate charge: 20nC
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMA86108LZ ONSEMI fdma86108lz-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.2A; Idm: 6A; 2.4W; MicroFET
Mounting: SMD
Case: MicroFET
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 2.4W
On-state resistance: 446mΩ
Polarisation: unipolar
Gate charge: 3nC
Gate-source voltage: ±20V
Pulsed drain current: 6A
Drain-source voltage: 100V
Drain current: 2.2A
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMA86151L ONSEMI fdma86151l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; Idm: 20A; 2.4W; MicroFET
Mounting: SMD
Case: MicroFET
Kind of package: reel; tape
Power dissipation: 2.4W
Gate charge: 7.3nC
Polarisation: unipolar
Drain current: 3.3A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Pulsed drain current: 20A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMA86551L ONSEMI fdma86551l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.5A; 2.4W; WDFN6
Kind of package: reel; tape
Case: WDFN6
Drain-source voltage: 60V
Drain current: 7.5A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMA8878 ONSEMI fdma8878-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 40A; 2.4W; WDFN6
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 10A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: WDFN6
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMA905P ONSEMI FAIRS47324-1.pdf?t.download=true&u=5oefqw Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -10A; 2.4W; WDFN6
Mounting: SMD
Power dissipation: 2.4W
Polarisation: unipolar
Drain current: -10A
Kind of channel: enhanced
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: WDFN6
On-state resistance: 21mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMA908PZ ONSEMI fdma908pz-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -40A; 2.4W
Mounting: SMD
Pulsed drain current: -40A
Power dissipation: 2.4W
Gate charge: 34nC
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Drain current: -12A
Kind of channel: enhanced
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: MicroFET
On-state resistance: 16mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMA910PZ ONSEMI fdma910pz-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -9.4A; Idm: -45A; 2.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9.4A
Pulsed drain current: -45A
Power dissipation: 2.4W
Case: MicroFET
Gate-source voltage: ±8V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMB2307NZ ONSEMI FAIR-S-A0000087996-1.pdf?t.download=true&u=5oefqw Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.7A; Idm: 40A; 2.2W; WDFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 9.7A
Pulsed drain current: 40A
Power dissipation: 2.2W
Case: WDFN8
Gate-source voltage: ±12V
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
Semiconductor structure: common drain
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMB2308PZ ONSEMI fdmb2308pz-d.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -7A; Idm: -30A; 2.2W; WDFN6
Mounting: SMD
Pulsed drain current: -30A
Power dissipation: 2.2W
Gate charge: 30nC
Polarisation: unipolar
Drain current: -7A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET x2
Kind of package: reel; tape
Semiconductor structure: common drain
Case: WDFN6
Gate-source voltage: ±12V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMB3800N ONSEMI FAIR-S-A0000087997-1.pdf?t.download=true&u=5oefqw Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4.8A; Idm: 9A; 1.6W
Kind of package: reel; tape
Pulsed drain current: 9A
Power dissipation: 1.6W
Gate charge: 5.6nC
Polarisation: unipolar
Drain current: 4.8A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Case: MicroFET
On-state resistance: 61mΩ
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMB3900AN ONSEMI FDMB3900AN-D.pdf FDMB3900AN Multi channel transistors
Produkt ist nicht verfügbar
FDMC007N08LC ONSEMI fdmc007n08lc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 330A; 57W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 42A
Pulsed drain current: 330A
Power dissipation: 57W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMC007N08LCDC ONSEMI fdmc007n08lcdc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 41A; Idm: 339A; 57W; PQFN8
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 339A
Mounting: SMD
Case: PQFN8
Drain-source voltage: 80V
Drain current: 41A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMC007N30D ONSEMI fdmc007n30d-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 18/29A; 1.9/2.5W; WDFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 18/29A
Power dissipation: 1.9/2.5W
Case: WDFN8
Gate-source voltage: ±12/±12V
On-state resistance: 16.3/9mΩ
Mounting: SMD
Gate charge: 17/34nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMC008N08C ONSEMI fdmc008n08c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 38A; Idm: 273A; 57W; Power33
Case: Power33
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 273A
Drain-source voltage: 80V
Drain current: 38A
On-state resistance: 13.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Gate charge: 29nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMC010N08C ONSEMI fdmc010n08c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 32A; Idm: 206A; 52W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 32A
Pulsed drain current: 206A
Power dissipation: 52W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMC010N08LC ONSEMI fdmc010n08lc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 32A; Idm: 200A; 52W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 32A
Pulsed drain current: 200A
Power dissipation: 52W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 18.4mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMC012N03 ONSEMI fdmc012n03-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 117A; Idm: 688A; 64W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 117A
Pulsed drain current: 688A
Power dissipation: 64W
Case: Power33
Gate-source voltage: ±12V
On-state resistance: 1.77mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMC0310AS-F127 ONSEMI FDMC0310AS-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 100A; 36W; MLP8
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 36W
Polarisation: unipolar
Case: MLP8
Gate charge: 52nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Drain-source voltage: 30V
Drain current: 21A
On-state resistance: 5.8mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMC15N06 ONSEMI fdmc15n06-d.pdf FAIRS47607-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 9A; Idm: 60A; 35W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 9A
Pulsed drain current: 60A
Power dissipation: 35W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 11.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMC2610 ONSEMI fdmc2610-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 42W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.5A
Power dissipation: 42W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 397mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMC2674 ONSEMI fdmc2674-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 220V; 7A; Idm: 13.8A; 42W; MLP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 220V
Drain current: 7A
Pulsed drain current: 13.8A
Power dissipation: 42W
Case: MLP8
Gate-source voltage: ±20V
On-state resistance: 814mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMC3020DC ONSEMI fdmc3020dc-d.pdf FAIR-S-A0002365617-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 100A; 50W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 50W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMC3612 ONSEMI fdmc3612-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 35W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Power dissipation: 35W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 212mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMC3612-L701 ONSEMI fdmc3612-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 15A; 35W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Pulsed drain current: 15A
Power dissipation: 35W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 212mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMC4435BZ FDMC4435BZ ONSEMI FDMC4435BZ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -18A; 31W; MLP8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -18A
Power dissipation: 31W
Case: MLP8
Gate-source voltage: ±25V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2976 Stücke:
Lieferzeit 7-14 Tag (e)
47+1.54 EUR
78+ 0.92 EUR
100+ 0.72 EUR
106+ 0.68 EUR
3000+ 0.67 EUR
Mindestbestellmenge: 47
FDG6322C FDG6322C.pdf
FDG6322C
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V
Case: SC70-6
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.3W
Gate charge: 0.4/1.5nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 0.22/0.41A
Kind of channel: enhanced
Drain-source voltage: 25/-25V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
On-state resistance: 7/1.9Ω
Gate-source voltage: ±8/±8V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2863 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
118+0.61 EUR
200+ 0.36 EUR
285+ 0.25 EUR
302+ 0.24 EUR
Mindestbestellmenge: 118
FDG6335N fdg6335n-d.pdf
Hersteller: ONSEMI
FDG6335N Multi channel transistors
auf Bestellung 1977 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
169+0.42 EUR
233+ 0.31 EUR
247+ 0.29 EUR
Mindestbestellmenge: 169
FDG8850NZ FDG8850NZ.pdf
FDG8850NZ
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.75A; 0.36W
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 0.75A
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.36W
Polarisation: unipolar
Gate charge: 1.44nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±12V
Mounting: SMD
Case: SC70-6; SC88; SOT363
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDH047AN08A0 fdh047an08a0-d.pdf
FDH047AN08A0
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 310W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 310W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 138nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDH055N15A fdh055n15a-d.pdf
FDH055N15A
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 118A; 429W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 118A
Power dissipation: 429W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
7+10.37 EUR
11+ 6.84 EUR
12+ 6.46 EUR
Mindestbestellmenge: 7
FDH210N08 fdh210n08-d.pdf ONSM-S-A0003586586-1.pdf?t.download=true&u=5oefqw
FDH210N08
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 132A; Idm: 840A; 462W; TO247
Mounting: THT
Pulsed drain current: 840A
Power dissipation: 462W
Gate charge: 301nC
Polarisation: unipolar
Drain current: 132A
Kind of channel: enhanced
Drain-source voltage: 75V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO247
On-state resistance: 5.5mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDH333 ONSM-S-A0003585186-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
FDH333 THT universal diodes
auf Bestellung 3472 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
173+0.41 EUR
1214+ 0.059 EUR
1283+ 0.056 EUR
Mindestbestellmenge: 173
FDH3632 fdp3632-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 800mA; 310W; TO247
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.8A
Power dissipation: 310W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDH44N50 FDH44N50.pdf
FDH44N50
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 750W; TO247
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 750W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDL100N50F FDL100N50F.pdf
FDL100N50F
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 100A; 2500W; TO264
Drain-source voltage: 500V
Drain current: 100A
Case: TO264
Polarisation: unipolar
On-state resistance: 55mΩ
Power dissipation: 2.5kW
Technology: UniFET™
Kind of channel: enhanced
Gate charge: 238nC
Gate-source voltage: ±30V
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDLL300A ONSM-S-A0003585186-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
FDLL300A SMD universal diodes
auf Bestellung 548 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
509+0.14 EUR
548+ 0.13 EUR
729+ 0.099 EUR
2500+ 0.057 EUR
Mindestbestellmenge: 509
FDLL4148 1N91x_1N4x48.PDF
FDLL4148
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOD80; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD80
Max. forward voltage: 1V
Max. load current: 0.4A
Max. forward impulse current: 1A
Power dissipation: 0.5W
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19839 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
643+0.11 EUR
981+ 0.073 EUR
1507+ 0.047 EUR
1832+ 0.039 EUR
2959+ 0.024 EUR
3290+ 0.022 EUR
4762+ 0.015 EUR
Mindestbestellmenge: 643
FDLL4148-D87Z 1n914-d.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOD80; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD80
Max. forward voltage: 1V
Max. load current: 0.4A
Max. forward impulse current: 1A
Power dissipation: 0.5W
Kind of package: reel; tape
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
FDLL4448 1n914-d.pdf
FDLL4448
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOD80; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD80
Max. forward voltage: 1V
Max. load current: 0.4A
Max. forward impulse current: 1A
Power dissipation: 0.5W
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDLL914 1n914-d.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.3A; 4ns; SOD80; Ufmax: 1V; Ifsm: 1A
Semiconductor structure: single diode
Max. off-state voltage: 100V
Load current: 0.3A
Case: SOD80
Max. forward voltage: 1V
Max. forward impulse current: 1A
Mounting: SMD
Max. load current: 0.4A
Kind of package: reel; tape
Power dissipation: 0.5W
Type of diode: switching
Reverse recovery time: 4ns
Anzahl je Verpackung: 25 Stücke
Produkt ist nicht verfügbar
FDM3622 fdm3622-d.pdf FAIR-S-A0002365655-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
FDM3622 SMD N channel transistors
Produkt ist nicht verfügbar
FDMA037N08LC fdma037n08lc-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 6A; Idm: 55A; 2.4W; WDFN6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 6A
Pulsed drain current: 55A
Power dissipation: 2.4W
Case: WDFN6
Gate-source voltage: ±20V
On-state resistance: 61mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMA1023PZ FDMA1023PZ.pdf
FDMA1023PZ
+1
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.7A; 1.5W; MicroFET
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.7A
Power dissipation: 1.5W
Case: MicroFET
Gate-source voltage: ±8V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
FDMA1024NZ fdma1024nz-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 6A; 1.4W; WDFN6
Mounting: SMD
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7.3nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 6A
Case: WDFN6
Drain-source voltage: 20V
Drain current: 5A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMA1027P FDMA1027P.pdf
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3A; Idm: -6A; MicroFET
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Pulsed drain current: -6A
Case: MicroFET
Gate-source voltage: ±8V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMA1028NZ FDMA1028NZ.pdf
FDMA1028NZ
+1
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.7A; 1.4W; MicroFET
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.7A
Power dissipation: 1.4W
Case: MicroFET
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
FDMA1029PZ fdma1029pz-d.pdf
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.1A; Idm: -6A; 1.4W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Pulsed drain current: -6A
Power dissipation: 1.4W
Case: MicroFET
Gate-source voltage: ±12V
On-state resistance: 141mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMA2002NZ fdma2002nz-d.pdf
Hersteller: ONSEMI
FDMA2002NZ Multi channel transistors
Produkt ist nicht verfügbar
FDMA291P FDMA291P.pdf
FDMA291P
+1
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.6A; 2.4W; MicroFET
Mounting: SMD
Power dissipation: 2.4W
Gate charge: 14nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -6.6A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: MicroFET
On-state resistance: 98mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMA3023PZ fdma3023pz-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; 1.4W; WDFN6
Drain-source voltage: -30V
Drain current: -2.9A
On-state resistance: 0.14Ω
Type of transistor: P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±8V
Mounting: SMD
Case: WDFN6
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMA410NZ fdma410nz-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9.5A; 2.4W; WDFN6
Mounting: SMD
Power dissipation: 2.4W
Polarisation: unipolar
Drain current: 9.5A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: WDFN6
On-state resistance: 32mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMA420NZ FAIRS47283-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.7A; Idm: 24A; 2.4W; WDFN6
Mounting: SMD
Case: WDFN6
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 5.7A
On-state resistance: 44mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 24A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMA430NZ FDMA430NZ.pdf
FDMA430NZ
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 2.4W; MicroFET
Mounting: SMD
Power dissipation: 2.4W
Gate charge: 11nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 5A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: MicroFET
On-state resistance: 61mΩ
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
FDMA507PZ FDMA507PZ.pdf
FDMA507PZ
+1
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -7.8A; 2.4W; MicroFET
Case: MicroFET
Mounting: SMD
Kind of package: reel; tape
Drain current: -7.8A
On-state resistance: 35mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Gate charge: 42nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: -20V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
FDMA530PZ FDMA530PZ.pdf
FDMA530PZ
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.8A; 2.4W; MicroFET
Kind of package: reel; tape
Type of transistor: P-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Gate charge: 11nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±25V
Mounting: SMD
Case: MicroFET
Drain-source voltage: -30V
Drain current: -6.8A
On-state resistance: 65mΩ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 57 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
49+1.47 EUR
57+ 1.26 EUR
75+ 0.96 EUR
Mindestbestellmenge: 49
FDMA6023PZT FDMA6023PZT.pdf
FDMA6023PZT
+1
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.6A; 1.4W; MicroFET
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.4W
Polarisation: unipolar
Case: MicroFET
Gate charge: 17nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±8V
Drain-source voltage: -20V
Drain current: -3.6A
On-state resistance: 0.17Ω
Type of transistor: P-MOSFET x2
Anzahl je Verpackung: 1 Stücke
auf Bestellung 338 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
54+1.33 EUR
97+ 0.74 EUR
107+ 0.67 EUR
130+ 0.55 EUR
138+ 0.52 EUR
Mindestbestellmenge: 54
FDMA7630 fdma7630-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 24A; 2.4W; MicroFET
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11A
Pulsed drain current: 24A
Power dissipation: 2.4W
Case: MicroFET
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMA7672 fdma7672-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 24A; 2.4W; MicroFET
Mounting: SMD
Pulsed drain current: 24A
Power dissipation: 2.4W
Gate charge: 13nC
Polarisation: unipolar
Drain current: 9A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: MicroFET
On-state resistance: 32mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMA8051L fdma8051l-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10A; Idm: 80A; 2.4W; MicroFET
Case: MicroFET
Mounting: SMD
Drain current: 10A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 19mΩ
Pulsed drain current: 80A
Power dissipation: 2.4W
Gate charge: 20nC
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMA86108LZ fdma86108lz-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.2A; Idm: 6A; 2.4W; MicroFET
Mounting: SMD
Case: MicroFET
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 2.4W
On-state resistance: 446mΩ
Polarisation: unipolar
Gate charge: 3nC
Gate-source voltage: ±20V
Pulsed drain current: 6A
Drain-source voltage: 100V
Drain current: 2.2A
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMA86151L fdma86151l-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; Idm: 20A; 2.4W; MicroFET
Mounting: SMD
Case: MicroFET
Kind of package: reel; tape
Power dissipation: 2.4W
Gate charge: 7.3nC
Polarisation: unipolar
Drain current: 3.3A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Pulsed drain current: 20A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMA86551L fdma86551l-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7.5A; 2.4W; WDFN6
Kind of package: reel; tape
Case: WDFN6
Drain-source voltage: 60V
Drain current: 7.5A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMA8878 fdma8878-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 40A; 2.4W; WDFN6
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 10A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: WDFN6
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMA905P FAIRS47324-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -10A; 2.4W; WDFN6
Mounting: SMD
Power dissipation: 2.4W
Polarisation: unipolar
Drain current: -10A
Kind of channel: enhanced
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: WDFN6
On-state resistance: 21mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMA908PZ fdma908pz-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -40A; 2.4W
Mounting: SMD
Pulsed drain current: -40A
Power dissipation: 2.4W
Gate charge: 34nC
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Drain current: -12A
Kind of channel: enhanced
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: MicroFET
On-state resistance: 16mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMA910PZ fdma910pz-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -9.4A; Idm: -45A; 2.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9.4A
Pulsed drain current: -45A
Power dissipation: 2.4W
Case: MicroFET
Gate-source voltage: ±8V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMB2307NZ FAIR-S-A0000087996-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.7A; Idm: 40A; 2.2W; WDFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 9.7A
Pulsed drain current: 40A
Power dissipation: 2.2W
Case: WDFN8
Gate-source voltage: ±12V
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
Semiconductor structure: common drain
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMB2308PZ fdmb2308pz-d.pdf
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -7A; Idm: -30A; 2.2W; WDFN6
Mounting: SMD
Pulsed drain current: -30A
Power dissipation: 2.2W
Gate charge: 30nC
Polarisation: unipolar
Drain current: -7A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET x2
Kind of package: reel; tape
Semiconductor structure: common drain
Case: WDFN6
Gate-source voltage: ±12V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMB3800N FAIR-S-A0000087997-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4.8A; Idm: 9A; 1.6W
Kind of package: reel; tape
Pulsed drain current: 9A
Power dissipation: 1.6W
Gate charge: 5.6nC
Polarisation: unipolar
Drain current: 4.8A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Case: MicroFET
On-state resistance: 61mΩ
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMB3900AN FDMB3900AN-D.pdf
Hersteller: ONSEMI
FDMB3900AN Multi channel transistors
Produkt ist nicht verfügbar
FDMC007N08LC fdmc007n08lc-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 330A; 57W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 42A
Pulsed drain current: 330A
Power dissipation: 57W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMC007N08LCDC fdmc007n08lcdc-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 41A; Idm: 339A; 57W; PQFN8
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 339A
Mounting: SMD
Case: PQFN8
Drain-source voltage: 80V
Drain current: 41A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMC007N30D fdmc007n30d-d.pdf
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 18/29A; 1.9/2.5W; WDFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 18/29A
Power dissipation: 1.9/2.5W
Case: WDFN8
Gate-source voltage: ±12/±12V
On-state resistance: 16.3/9mΩ
Mounting: SMD
Gate charge: 17/34nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMC008N08C fdmc008n08c-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 38A; Idm: 273A; 57W; Power33
Case: Power33
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 273A
Drain-source voltage: 80V
Drain current: 38A
On-state resistance: 13.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Gate charge: 29nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMC010N08C fdmc010n08c-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 32A; Idm: 206A; 52W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 32A
Pulsed drain current: 206A
Power dissipation: 52W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMC010N08LC fdmc010n08lc-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 32A; Idm: 200A; 52W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 32A
Pulsed drain current: 200A
Power dissipation: 52W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 18.4mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMC012N03 fdmc012n03-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 117A; Idm: 688A; 64W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 117A
Pulsed drain current: 688A
Power dissipation: 64W
Case: Power33
Gate-source voltage: ±12V
On-state resistance: 1.77mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMC0310AS-F127 FDMC0310AS-D.PDF
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 100A; 36W; MLP8
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 36W
Polarisation: unipolar
Case: MLP8
Gate charge: 52nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Drain-source voltage: 30V
Drain current: 21A
On-state resistance: 5.8mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMC15N06 fdmc15n06-d.pdf FAIRS47607-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 9A; Idm: 60A; 35W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 9A
Pulsed drain current: 60A
Power dissipation: 35W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 11.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMC2610 fdmc2610-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 42W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.5A
Power dissipation: 42W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 397mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMC2674 fdmc2674-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 220V; 7A; Idm: 13.8A; 42W; MLP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 220V
Drain current: 7A
Pulsed drain current: 13.8A
Power dissipation: 42W
Case: MLP8
Gate-source voltage: ±20V
On-state resistance: 814mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMC3020DC fdmc3020dc-d.pdf FAIR-S-A0002365617-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 100A; 50W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 50W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMC3612 fdmc3612-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 35W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Power dissipation: 35W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 212mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMC3612-L701 fdmc3612-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 15A; 35W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Pulsed drain current: 15A
Power dissipation: 35W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 212mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMC4435BZ FDMC4435BZ.pdf
FDMC4435BZ
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -18A; 31W; MLP8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -18A
Power dissipation: 31W
Case: MLP8
Gate-source voltage: ±25V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2976 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
47+1.54 EUR
78+ 0.92 EUR
100+ 0.72 EUR
106+ 0.68 EUR
3000+ 0.67 EUR
Mindestbestellmenge: 47
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