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FDD14AN06LA0-F085 FDD14AN06LA0-F085 ONSEMI fdd14an06l_f085-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 125W; DPAK
Drain-source voltage: 60V
Drain current: 50A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 125W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 32nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DPAK
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDD16AN08A0 ONSEMI FAIRS45904-1.pdf?t.download=true&u=5oefqw FDD16AN08A0 SMD N channel transistors
auf Bestellung 2440 Stücke:
Lieferzeit 7-14 Tag (e)
35+2.1 EUR
47+ 1.53 EUR
50+ 1.44 EUR
Mindestbestellmenge: 35
FDD2572 FDD2572 ONSEMI FDD2572.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 4A; 135W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 4A
Power dissipation: 135W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 146mΩ
Mounting: SMD
Gate charge: 3.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDD2582 FDD2582 ONSEMI FDD2582.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 95W; DPAK
Kind of package: reel; tape
Drain-source voltage: 150V
Drain current: 21A
On-state resistance: 172mΩ
Type of transistor: N-MOSFET
Power dissipation: 95W
Polarisation: unipolar
Gate charge: 25nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DPAK
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDD2670 FDD2670 ONSEMI fdd2670-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.6A; Idm: 20A; 70W; DPAK
Mounting: SMD
Case: DPAK
Power dissipation: 70W
Kind of package: reel; tape
Drain-source voltage: 200V
Drain current: 3.6A
On-state resistance: 275mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 43nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDD306P FDD306P ONSEMI FDD306P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -6.7A; 52W; DPAK
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -6.7A
Power dissipation: 52W
Case: DPAK
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 786 Stücke:
Lieferzeit 7-14 Tag (e)
50+1.43 EUR
75+ 0.96 EUR
103+ 0.7 EUR
107+ 0.67 EUR
Mindestbestellmenge: 50
FDD3672 FDD3672 ONSEMI FDD3672.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 135W; DPAK
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 135W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3180 Stücke:
Lieferzeit 7-14 Tag (e)
39+1.86 EUR
43+ 1.69 EUR
57+ 1.26 EUR
61+ 1.19 EUR
Mindestbestellmenge: 39
FDD3682 FDD3682 ONSEMI FDD3682.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 32A; 95W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 32A
Power dissipation: 95W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDD3860 FDD3860 ONSEMI fdd3860-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.2A; Idm: 60A; 83W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.2A
Pulsed drain current: 60A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1830 Stücke:
Lieferzeit 7-14 Tag (e)
58+1.24 EUR
64+ 1.13 EUR
79+ 0.91 EUR
84+ 0.86 EUR
500+ 0.83 EUR
Mindestbestellmenge: 58
FDD3N40TM FDD3N40TM ONSEMI FAIRS46517-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.25A; 30W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.25A
Power dissipation: 30W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 3.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDD3N50NZTM FDD3N50NZTM ONSEMI FDD3N50NZ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.5A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.5A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDD4141 FDD4141 ONSEMI FDD4141.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10.8A; 69W; DPAK
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -10.8A
Power dissipation: 69W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 18.7mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDD4243 FDD4243 ONSEMI FDD4243.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -14A; 42W; DPAK
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -14A
Power dissipation: 42W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 69mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1285 Stücke:
Lieferzeit 7-14 Tag (e)
76+0.94 EUR
88+ 0.82 EUR
126+ 0.57 EUR
133+ 0.54 EUR
Mindestbestellmenge: 76
FDD4685 FDD4685 ONSEMI FDD4685.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -32A; 69W; DPAK
Kind of package: reel; tape
Drain-source voltage: -40V
Drain current: -32A
On-state resistance: 42mΩ
Type of transistor: P-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Gate charge: 27nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DPAK
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2265 Stücke:
Lieferzeit 7-14 Tag (e)
30+2.4 EUR
52+ 1.39 EUR
68+ 1.06 EUR
72+ 1 EUR
Mindestbestellmenge: 30
FDD5353 FDD5353 ONSEMI FDD5353.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 69W; DPAK
Power dissipation: 69W
Mounting: SMD
Kind of package: reel; tape
Case: DPAK
Drain-source voltage: 60V
Drain current: 50A
On-state resistance: 20.3mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 65nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2365 Stücke:
Lieferzeit 7-14 Tag (e)
50+1.43 EUR
57+ 1.27 EUR
65+ 1.1 EUR
69+ 1.04 EUR
500+ 1 EUR
Mindestbestellmenge: 50
FDD5680 ONSEMI fdd5680-d.pdf FDD5680 SMD N channel transistors
Produkt ist nicht verfügbar
FDD5690 ONSEMI FAIR-S-A0002365562-1.pdf?t.download=true&u=5oefqw FDD5690 SMD N channel transistors
auf Bestellung 447 Stücke:
Lieferzeit 7-14 Tag (e)
36+2 EUR
73+ 0.99 EUR
77+ 0.93 EUR
500+ 0.92 EUR
Mindestbestellmenge: 36
FDD5N50FTM-WS ONSEMI fdd5n50f-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.1A; Idm: 14A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.1A
Pulsed drain current: 14A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.55Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDD5N60NZTM FDD5N60NZTM ONSEMI fdd5n60nz-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.4A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2488 Stücke:
Lieferzeit 7-14 Tag (e)
66+1.09 EUR
75+ 0.96 EUR
93+ 0.77 EUR
99+ 0.73 EUR
500+ 0.72 EUR
Mindestbestellmenge: 66
FDD6637 FDD6637 ONSEMI FDD6637.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -35V; -55A; 57W; DPAK
Case: DPAK
Drain-source voltage: -35V
Drain current: -55A
On-state resistance: 19mΩ
Type of transistor: P-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 35nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±25V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 590 Stücke:
Lieferzeit 7-14 Tag (e)
38+1.9 EUR
46+ 1.56 EUR
60+ 1.2 EUR
64+ 1.13 EUR
Mindestbestellmenge: 38
FDD6670A ONSEMI FAIR-S-A0002365542-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 63W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Power dissipation: 63W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDD6680AS FDD6680AS ONSEMI FAIR-S-A0002365622-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 55A; Idm: 100A; 60W; DPAK
Case: DPAK
Drain-source voltage: 30V
Drain current: 55A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 60W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 29nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDD6685 ONSEMI FAIR-S-A0002365599-1.pdf?t.download=true&u=5oefqw Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; DPAK
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -40A
Power dissipation: 52W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDD6N20TM ONSEMI fdd6n20tm-d.pdf FDD6N20TM SMD N channel transistors
Produkt ist nicht verfügbar
FDD6N50TM ONSEMI fdu6n50-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.8A; Idm: 24A; 89W; DPAK
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.8A
Pulsed drain current: 24A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 16.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDD770N15A FDD770N15A ONSEMI fdd770n15a-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 56.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Power dissipation: 56.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 187 Stücke:
Lieferzeit 7-14 Tag (e)
54+1.33 EUR
74+ 0.98 EUR
88+ 0.82 EUR
93+ 0.77 EUR
500+ 0.74 EUR
Mindestbestellmenge: 54
FDD7N20TM ONSEMI fdd7n20tm-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3A; 43W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3A
Power dissipation: 43W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.69Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDD7N25LZTM ONSEMI fdd7n25lz-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 3.7A; 56W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 3.7A
Power dissipation: 56W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDD8445 FDD8445 ONSEMI FDD8445.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 79W; DPAK
Mounting: SMD
Kind of package: reel; tape
Case: DPAK
Gate charge: 7.6nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 70A
On-state resistance: 16.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 79W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1888 Stücke:
Lieferzeit 7-14 Tag (e)
57+1.27 EUR
63+ 1.14 EUR
77+ 0.93 EUR
81+ 0.89 EUR
500+ 0.84 EUR
Mindestbestellmenge: 57
FDD8447L FDD8447L ONSEMI FDD8447L.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 44W; DPAK
Mounting: SMD
Power dissipation: 44W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 52nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: DPAK
Drain-source voltage: 40V
Drain current: 50A
On-state resistance: 14mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 790 Stücke:
Lieferzeit 7-14 Tag (e)
59+1.22 EUR
65+ 1.1 EUR
82+ 0.87 EUR
87+ 0.83 EUR
500+ 0.82 EUR
Mindestbestellmenge: 59
FDD8451 FDD8451 ONSEMI FAIR-S-A0002365550-1.pdf?t.download=true&u=5oefqw fdd8451-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 28A; 30W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 28A
Power dissipation: 30W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2296 Stücke:
Lieferzeit 7-14 Tag (e)
55+1.3 EUR
80+ 0.9 EUR
99+ 0.73 EUR
105+ 0.69 EUR
500+ 0.67 EUR
Mindestbestellmenge: 55
FDD850N10L FDD850N10L ONSEMI fdd850n10l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11.1A; 50W; DPAK
Drain-source voltage: 100V
Drain current: 11.1A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Kind of package: reel; tape
Mounting: SMD
Case: DPAK
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2427 Stücke:
Lieferzeit 7-14 Tag (e)
52+1.4 EUR
67+ 1.07 EUR
87+ 0.83 EUR
91+ 0.79 EUR
Mindestbestellmenge: 52
FDD86102LZ FDD86102LZ ONSEMI FDD86102LZ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; 54W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1657 Stücke:
Lieferzeit 7-14 Tag (e)
41+1.76 EUR
46+ 1.56 EUR
60+ 1.2 EUR
64+ 1.13 EUR
Mindestbestellmenge: 41
FDD86110 ONSEMI fdd86110-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; 127W; DPAK
Drain-source voltage: 100V
Drain current: 50A
On-state resistance: 10.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 127W
Polarisation: unipolar
Kind of package: reel; tape
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DPAK
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDD86250 FDD86250 ONSEMI fdd86250-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; Idm: 164A; 132W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 27A
Pulsed drain current: 164A
Power dissipation: 132W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2489 Stücke:
Lieferzeit 7-14 Tag (e)
28+2.57 EUR
32+ 2.3 EUR
41+ 1.77 EUR
43+ 1.67 EUR
Mindestbestellmenge: 28
FDD86252 ONSEMI fdd86252-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; 89W; DPAK
Kind of package: reel; tape
Power dissipation: 89W
Polarisation: unipolar
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DPAK
Drain-source voltage: 150V
Drain current: 27A
On-state resistance: 103mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDD86367 FDD86367 ONSEMI fdd86367-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 227W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 227W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 88nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1966 Stücke:
Lieferzeit 7-14 Tag (e)
31+2.33 EUR
35+ 2.1 EUR
43+ 1.69 EUR
46+ 1.59 EUR
500+ 1.52 EUR
Mindestbestellmenge: 31
FDD8647L FDD8647L ONSEMI FDD8647L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 42A; 43W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 42A
Power dissipation: 43W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 13.6mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 167 Stücke:
Lieferzeit 7-14 Tag (e)
45+1.6 EUR
57+ 1.26 EUR
75+ 0.96 EUR
79+ 0.92 EUR
Mindestbestellmenge: 45
FDD86540 FDD86540 ONSEMI fdd86540-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 86A; Idm: 240A; 127W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 86A
Pulsed drain current: 240A
Power dissipation: 127W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
FDD86567-F085 FDD86567-F085 ONSEMI fdd86567_f085-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 227W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 227W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDD8770 ONSEMI FAIR-S-A0002365726-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 210A; Idm: 407A; 115W; DPAK
Drain-source voltage: 25V
Drain current: 210A
On-state resistance: 5.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 115W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 73nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 407A
Mounting: SMD
Case: DPAK
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDD8796 ONSEMI FAIR-S-A0002366283-1.pdf?t.download=true&u=5oefqw FDD%2CFDU8796.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 98A; Idm: 305A; 88W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 98A
Pulsed drain current: 305A
Power dissipation: 88W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDD8796/BKN ONSEMI FDD8796BKN-ONS SMD N channel transistors
Produkt ist nicht verfügbar
FDD8870 FDD8870 ONSEMI FDD8870.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 160W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 160W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: SMD
Gate charge: 118nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDD8876 FDD8876 ONSEMI FDD%2CFDU8876.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 73A; 70W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 73A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2500 Stücke:
Lieferzeit 7-14 Tag (e)
41+1.76 EUR
54+ 1.33 EUR
67+ 1.07 EUR
71+ 1.01 EUR
500+ 0.97 EUR
Mindestbestellmenge: 41
FDD8878 FDD8878 ONSEMI FAIR-S-A0002366100-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDD8880 ONSEMI FAIR-S-A0002365606-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 58A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 58A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDD8896 FDD8896 ONSEMI FDD,FDU8896.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 94A; 80W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 94A
Power dissipation: 80W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2450 Stücke:
Lieferzeit 7-14 Tag (e)
61+1.19 EUR
73+ 0.99 EUR
99+ 0.73 EUR
105+ 0.69 EUR
Mindestbestellmenge: 61
FDD8N50NZTM FDD8N50NZTM ONSEMI fdd8n50nz-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.9A; Idm: 26A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.9A
Pulsed drain current: 26A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
FDFS2P106A FDFS2P106A ONSEMI fdfs2p106a-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; 1.6W; SO8
Mounting: SMD
Case: SO8
Power dissipation: 1.6W
Polarisation: unipolar
Drain current: -3A
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 192mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDG1024NZ FDG1024NZ ONSEMI FDG1024NZ.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.2A; 0.36W
Mounting: SMD
Drain current: 1.2A
Drain-source voltage: 20V
Power dissipation: 0.36W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2.6nC
Technology: PowerTrench®
Kind of channel: enhanced
On-state resistance: 389mΩ
Gate-source voltage: ±8V
Type of transistor: N-MOSFET x2
Case: SC70-6; SC88; SOT363
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDG316P ONSEMI FAIRS16229-1.pdf?t.download=true&u=5oefqw Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.6A; 0.75W; SC70-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.6A
Power dissipation: 0.75W
Case: SC70-6
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDG327N ONSEMI fdg327n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Power dissipation: 0.42W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±8V
On-state resistance: 0.115Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDG6301N FDG6301N ONSEMI FDG6301N.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.3W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 25V
Drain current: 0.22A
On-state resistance: 7Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.3W
Polarisation: unipolar
Gate charge: 0.4nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 155 Stücke:
Lieferzeit 7-14 Tag (e)
155+0.46 EUR
188+ 0.39 EUR
3000+ 0.22 EUR
Mindestbestellmenge: 155
FDG6301N-F085 ONSEMI fdg6301n_f085-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.3W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: 25V
Drain current: 0.22A
On-state resistance: 7Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.3W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDG6303N FDG6303N ONSEMI fdg6303n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 500mA; Idm: 1.3A; 0.3W
Type of transistor: N-MOSFET x2
Technology: DMOS
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.5A
Pulsed drain current: 1.3A
Power dissipation: 0.3W
Case: SC70-6; SC88; SOT363
On-state resistance: 770mΩ
Mounting: SMD
Gate charge: 2.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1725 Stücke:
Lieferzeit 7-14 Tag (e)
150+0.48 EUR
270+ 0.27 EUR
370+ 0.19 EUR
390+ 0.18 EUR
Mindestbestellmenge: 150
FDG6304P FDG6304P ONSEMI FDG6304P.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -25V; -0.41A; 0.3W; SC70-6
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -25V
Drain current: -0.41A
Power dissipation: 0.3W
Case: SC70-6
Gate-source voltage: ±8V
On-state resistance: 1.9Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1910 Stücke:
Lieferzeit 7-14 Tag (e)
152+0.47 EUR
178+ 0.4 EUR
269+ 0.27 EUR
284+ 0.25 EUR
Mindestbestellmenge: 152
FDG6308P FDG6308P ONSEMI FDG6308P.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.6A; 0.3W
Mounting: SMD
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
On-state resistance: 0.8Ω
Power dissipation: 0.3W
Gate charge: 2.5nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -0.6A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET x2
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDG6317NZ ONSEMI FDG6317NZ.PDF Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.7A; 0.3W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.7A
Power dissipation: 0.3W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±12V
On-state resistance: 0.56Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDG6321C ONSEMI fdg6321c-d.pdf FDG6321C Multi channel transistors
auf Bestellung 2791 Stücke:
Lieferzeit 7-14 Tag (e)
121+0.59 EUR
260+ 0.28 EUR
275+ 0.26 EUR
Mindestbestellmenge: 121
FDD14AN06LA0-F085 fdd14an06l_f085-d.pdf
FDD14AN06LA0-F085
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 125W; DPAK
Drain-source voltage: 60V
Drain current: 50A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 125W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 32nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DPAK
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDD16AN08A0 FAIRS45904-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
FDD16AN08A0 SMD N channel transistors
auf Bestellung 2440 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
35+2.1 EUR
47+ 1.53 EUR
50+ 1.44 EUR
Mindestbestellmenge: 35
FDD2572 FDD2572.pdf
FDD2572
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 4A; 135W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 4A
Power dissipation: 135W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 146mΩ
Mounting: SMD
Gate charge: 3.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDD2582 FDD2582.pdf
FDD2582
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 95W; DPAK
Kind of package: reel; tape
Drain-source voltage: 150V
Drain current: 21A
On-state resistance: 172mΩ
Type of transistor: N-MOSFET
Power dissipation: 95W
Polarisation: unipolar
Gate charge: 25nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DPAK
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDD2670 fdd2670-d.pdf
FDD2670
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.6A; Idm: 20A; 70W; DPAK
Mounting: SMD
Case: DPAK
Power dissipation: 70W
Kind of package: reel; tape
Drain-source voltage: 200V
Drain current: 3.6A
On-state resistance: 275mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 43nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDD306P FDD306P.pdf
FDD306P
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -6.7A; 52W; DPAK
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -6.7A
Power dissipation: 52W
Case: DPAK
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 786 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
50+1.43 EUR
75+ 0.96 EUR
103+ 0.7 EUR
107+ 0.67 EUR
Mindestbestellmenge: 50
FDD3672 FDD3672.pdf
FDD3672
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 135W; DPAK
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 44A
Power dissipation: 135W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3180 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
39+1.86 EUR
43+ 1.69 EUR
57+ 1.26 EUR
61+ 1.19 EUR
Mindestbestellmenge: 39
FDD3682 FDD3682.pdf
FDD3682
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 32A; 95W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 32A
Power dissipation: 95W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDD3860 fdd3860-d.pdf
FDD3860
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.2A; Idm: 60A; 83W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.2A
Pulsed drain current: 60A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1830 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
58+1.24 EUR
64+ 1.13 EUR
79+ 0.91 EUR
84+ 0.86 EUR
500+ 0.83 EUR
Mindestbestellmenge: 58
FDD3N40TM FAIRS46517-1.pdf?t.download=true&u=5oefqw
FDD3N40TM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.25A; 30W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.25A
Power dissipation: 30W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 3.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDD3N50NZTM FDD3N50NZ.pdf
FDD3N50NZTM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.5A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.5A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDD4141 FDD4141.pdf
FDD4141
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10.8A; 69W; DPAK
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -10.8A
Power dissipation: 69W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 18.7mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDD4243 FDD4243.pdf
FDD4243
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -14A; 42W; DPAK
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -14A
Power dissipation: 42W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 69mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1285 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
76+0.94 EUR
88+ 0.82 EUR
126+ 0.57 EUR
133+ 0.54 EUR
Mindestbestellmenge: 76
FDD4685 FDD4685.pdf
FDD4685
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -32A; 69W; DPAK
Kind of package: reel; tape
Drain-source voltage: -40V
Drain current: -32A
On-state resistance: 42mΩ
Type of transistor: P-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Gate charge: 27nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DPAK
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2265 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
30+2.4 EUR
52+ 1.39 EUR
68+ 1.06 EUR
72+ 1 EUR
Mindestbestellmenge: 30
FDD5353 FDD5353.pdf
FDD5353
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 69W; DPAK
Power dissipation: 69W
Mounting: SMD
Kind of package: reel; tape
Case: DPAK
Drain-source voltage: 60V
Drain current: 50A
On-state resistance: 20.3mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 65nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2365 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
50+1.43 EUR
57+ 1.27 EUR
65+ 1.1 EUR
69+ 1.04 EUR
500+ 1 EUR
Mindestbestellmenge: 50
FDD5680 fdd5680-d.pdf
Hersteller: ONSEMI
FDD5680 SMD N channel transistors
Produkt ist nicht verfügbar
FDD5690 FAIR-S-A0002365562-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
FDD5690 SMD N channel transistors
auf Bestellung 447 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
36+2 EUR
73+ 0.99 EUR
77+ 0.93 EUR
500+ 0.92 EUR
Mindestbestellmenge: 36
FDD5N50FTM-WS fdd5n50f-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.1A; Idm: 14A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.1A
Pulsed drain current: 14A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.55Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDD5N60NZTM fdd5n60nz-d.pdf
FDD5N60NZTM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.4A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2488 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
66+1.09 EUR
75+ 0.96 EUR
93+ 0.77 EUR
99+ 0.73 EUR
500+ 0.72 EUR
Mindestbestellmenge: 66
FDD6637 FDD6637.pdf
FDD6637
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -35V; -55A; 57W; DPAK
Case: DPAK
Drain-source voltage: -35V
Drain current: -55A
On-state resistance: 19mΩ
Type of transistor: P-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 35nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±25V
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 590 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
38+1.9 EUR
46+ 1.56 EUR
60+ 1.2 EUR
64+ 1.13 EUR
Mindestbestellmenge: 38
FDD6670A FAIR-S-A0002365542-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 63W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Power dissipation: 63W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDD6680AS FAIR-S-A0002365622-1.pdf?t.download=true&u=5oefqw
FDD6680AS
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 55A; Idm: 100A; 60W; DPAK
Case: DPAK
Drain-source voltage: 30V
Drain current: 55A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 60W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 29nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDD6685 FAIR-S-A0002365599-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; DPAK
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -40A
Power dissipation: 52W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDD6N20TM fdd6n20tm-d.pdf
Hersteller: ONSEMI
FDD6N20TM SMD N channel transistors
Produkt ist nicht verfügbar
FDD6N50TM fdu6n50-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.8A; Idm: 24A; 89W; DPAK
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.8A
Pulsed drain current: 24A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 16.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDD770N15A fdd770n15a-d.pdf
FDD770N15A
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 56.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Power dissipation: 56.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 187 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
54+1.33 EUR
74+ 0.98 EUR
88+ 0.82 EUR
93+ 0.77 EUR
500+ 0.74 EUR
Mindestbestellmenge: 54
FDD7N20TM fdd7n20tm-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3A; 43W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3A
Power dissipation: 43W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.69Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDD7N25LZTM fdd7n25lz-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 3.7A; 56W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 3.7A
Power dissipation: 56W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDD8445 FDD8445.pdf
FDD8445
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 79W; DPAK
Mounting: SMD
Kind of package: reel; tape
Case: DPAK
Gate charge: 7.6nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 70A
On-state resistance: 16.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 79W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1888 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
57+1.27 EUR
63+ 1.14 EUR
77+ 0.93 EUR
81+ 0.89 EUR
500+ 0.84 EUR
Mindestbestellmenge: 57
FDD8447L description FDD8447L.pdf
FDD8447L
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 44W; DPAK
Mounting: SMD
Power dissipation: 44W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 52nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: DPAK
Drain-source voltage: 40V
Drain current: 50A
On-state resistance: 14mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 790 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
59+1.22 EUR
65+ 1.1 EUR
82+ 0.87 EUR
87+ 0.83 EUR
500+ 0.82 EUR
Mindestbestellmenge: 59
FDD8451 FAIR-S-A0002365550-1.pdf?t.download=true&u=5oefqw fdd8451-d.pdf
FDD8451
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 28A; 30W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 28A
Power dissipation: 30W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2296 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
55+1.3 EUR
80+ 0.9 EUR
99+ 0.73 EUR
105+ 0.69 EUR
500+ 0.67 EUR
Mindestbestellmenge: 55
FDD850N10L fdd850n10l-d.pdf
FDD850N10L
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11.1A; 50W; DPAK
Drain-source voltage: 100V
Drain current: 11.1A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Kind of package: reel; tape
Mounting: SMD
Case: DPAK
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2427 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
52+1.4 EUR
67+ 1.07 EUR
87+ 0.83 EUR
91+ 0.79 EUR
Mindestbestellmenge: 52
FDD86102LZ FDD86102LZ.pdf
FDD86102LZ
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; 54W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1657 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
41+1.76 EUR
46+ 1.56 EUR
60+ 1.2 EUR
64+ 1.13 EUR
Mindestbestellmenge: 41
FDD86110 fdd86110-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; 127W; DPAK
Drain-source voltage: 100V
Drain current: 50A
On-state resistance: 10.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 127W
Polarisation: unipolar
Kind of package: reel; tape
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DPAK
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDD86250 fdd86250-d.pdf
FDD86250
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; Idm: 164A; 132W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 27A
Pulsed drain current: 164A
Power dissipation: 132W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2489 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
28+2.57 EUR
32+ 2.3 EUR
41+ 1.77 EUR
43+ 1.67 EUR
Mindestbestellmenge: 28
FDD86252 fdd86252-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; 89W; DPAK
Kind of package: reel; tape
Power dissipation: 89W
Polarisation: unipolar
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DPAK
Drain-source voltage: 150V
Drain current: 27A
On-state resistance: 103mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDD86367 fdd86367-d.pdf
FDD86367
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 227W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 227W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 88nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1966 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
31+2.33 EUR
35+ 2.1 EUR
43+ 1.69 EUR
46+ 1.59 EUR
500+ 1.52 EUR
Mindestbestellmenge: 31
FDD8647L FDD8647L.pdf
FDD8647L
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 42A; 43W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 42A
Power dissipation: 43W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 13.6mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 167 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
45+1.6 EUR
57+ 1.26 EUR
75+ 0.96 EUR
79+ 0.92 EUR
Mindestbestellmenge: 45
FDD86540 fdd86540-d.pdf
FDD86540
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 86A; Idm: 240A; 127W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 86A
Pulsed drain current: 240A
Power dissipation: 127W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
FDD86567-F085 fdd86567_f085-d.pdf
FDD86567-F085
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 227W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 227W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDD8770 FAIR-S-A0002365726-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 210A; Idm: 407A; 115W; DPAK
Drain-source voltage: 25V
Drain current: 210A
On-state resistance: 5.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 115W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 73nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 407A
Mounting: SMD
Case: DPAK
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDD8796 FAIR-S-A0002366283-1.pdf?t.download=true&u=5oefqw FDD%2CFDU8796.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 98A; Idm: 305A; 88W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 98A
Pulsed drain current: 305A
Power dissipation: 88W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDD8796/BKN
Hersteller: ONSEMI
FDD8796BKN-ONS SMD N channel transistors
Produkt ist nicht verfügbar
FDD8870 FDD8870.pdf
FDD8870
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 160W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 160W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: SMD
Gate charge: 118nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDD8876 FDD%2CFDU8876.pdf
FDD8876
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 73A; 70W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 73A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2500 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
41+1.76 EUR
54+ 1.33 EUR
67+ 1.07 EUR
71+ 1.01 EUR
500+ 0.97 EUR
Mindestbestellmenge: 41
FDD8878 FAIR-S-A0002366100-1.pdf?t.download=true&u=5oefqw
FDD8878
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDD8880 FAIR-S-A0002365606-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 58A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 58A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDD8896 FDD,FDU8896.pdf
FDD8896
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 94A; 80W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 94A
Power dissipation: 80W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2450 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
61+1.19 EUR
73+ 0.99 EUR
99+ 0.73 EUR
105+ 0.69 EUR
Mindestbestellmenge: 61
FDD8N50NZTM fdd8n50nz-d.pdf
FDD8N50NZTM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.9A; Idm: 26A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.9A
Pulsed drain current: 26A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
FDFS2P106A fdfs2p106a-d.pdf
FDFS2P106A
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; 1.6W; SO8
Mounting: SMD
Case: SO8
Power dissipation: 1.6W
Polarisation: unipolar
Drain current: -3A
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 192mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDG1024NZ FDG1024NZ.pdf
FDG1024NZ
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.2A; 0.36W
Mounting: SMD
Drain current: 1.2A
Drain-source voltage: 20V
Power dissipation: 0.36W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2.6nC
Technology: PowerTrench®
Kind of channel: enhanced
On-state resistance: 389mΩ
Gate-source voltage: ±8V
Type of transistor: N-MOSFET x2
Case: SC70-6; SC88; SOT363
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDG316P FAIRS16229-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.6A; 0.75W; SC70-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.6A
Power dissipation: 0.75W
Case: SC70-6
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDG327N fdg327n-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Power dissipation: 0.42W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±8V
On-state resistance: 0.115Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDG6301N FDG6301N.pdf
FDG6301N
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.3W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 25V
Drain current: 0.22A
On-state resistance: 7Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.3W
Polarisation: unipolar
Gate charge: 0.4nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 155 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
155+0.46 EUR
188+ 0.39 EUR
3000+ 0.22 EUR
Mindestbestellmenge: 155
FDG6301N-F085 fdg6301n_f085-d.pdf
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.3W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: 25V
Drain current: 0.22A
On-state resistance: 7Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.3W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDG6303N fdg6303n-d.pdf
FDG6303N
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 500mA; Idm: 1.3A; 0.3W
Type of transistor: N-MOSFET x2
Technology: DMOS
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.5A
Pulsed drain current: 1.3A
Power dissipation: 0.3W
Case: SC70-6; SC88; SOT363
On-state resistance: 770mΩ
Mounting: SMD
Gate charge: 2.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1725 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
150+0.48 EUR
270+ 0.27 EUR
370+ 0.19 EUR
390+ 0.18 EUR
Mindestbestellmenge: 150
FDG6304P FDG6304P.pdf
FDG6304P
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -25V; -0.41A; 0.3W; SC70-6
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -25V
Drain current: -0.41A
Power dissipation: 0.3W
Case: SC70-6
Gate-source voltage: ±8V
On-state resistance: 1.9Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1910 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
152+0.47 EUR
178+ 0.4 EUR
269+ 0.27 EUR
284+ 0.25 EUR
Mindestbestellmenge: 152
FDG6308P FDG6308P.pdf
FDG6308P
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.6A; 0.3W
Mounting: SMD
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
On-state resistance: 0.8Ω
Power dissipation: 0.3W
Gate charge: 2.5nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -0.6A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET x2
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDG6317NZ FDG6317NZ.PDF
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.7A; 0.3W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.7A
Power dissipation: 0.3W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±12V
On-state resistance: 0.56Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDG6321C fdg6321c-d.pdf
Hersteller: ONSEMI
FDG6321C Multi channel transistors
auf Bestellung 2791 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
121+0.59 EUR
260+ 0.28 EUR
275+ 0.26 EUR
Mindestbestellmenge: 121
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