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FDB44N25TM FDB44N25TM ONSEMI FDB44N25.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 26.4A; 307W; D2PAK
Polarisation: unipolar
Gate charge: 61nC
Technology: UniFET™
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: SMD
Case: D2PAK
Drain-source voltage: 250V
Drain current: 26.4A
On-state resistance: 69mΩ
Type of transistor: N-MOSFET
Power dissipation: 307W
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 434 Stücke:
Lieferzeit 7-14 Tag (e)
24+3.1 EUR
33+ 2.17 EUR
35+ 2.04 EUR
250+ 1.97 EUR
Mindestbestellmenge: 24
FDB52N20TM FDB52N20TM ONSEMI FDB52N20.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 52A; 357W; D2PAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 52A
Power dissipation: 357W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
5+14.3 EUR
9+ 7.95 EUR
23+ 3.1 EUR
Mindestbestellmenge: 5
FDB5800 FDB5800 ONSEMI FDB5800.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 242W; D2PAK
Technology: PowerTrench®
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 80A
On-state resistance: 12.6mΩ
Gate charge: 135nC
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 242W
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
auf Bestellung 725 Stücke:
Lieferzeit 7-14 Tag (e)
21+3.52 EUR
23+ 3.13 EUR
28+ 2.57 EUR
30+ 2.43 EUR
Mindestbestellmenge: 21
FDB8447L ONSEMI fdb8447l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 60W; D2PAK
Mounting: SMD
Power dissipation: 60W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: D2PAK
Drain-source voltage: 40V
Drain current: 50A
On-state resistance: 12.4mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDB86102LZ FDB86102LZ ONSEMI ONSM-S-A0003584116-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 50A; 3.1W; D2PAK
Technology: UniFET™
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 3.1W
On-state resistance: 42mΩ
Polarisation: unipolar
Gate charge: 21nC
Gate-source voltage: ±20V
Pulsed drain current: 50A
Drain-source voltage: 100V
Drain current: 30A
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDB8896 ONSEMI FDB8896-D.pdf FDB8896 SMD N channel transistors
Produkt ist nicht verfügbar
FDBL0630N150 ONSEMI fdbl0630n150-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 169A; 500W; H-PSOF8L
Type of transistor: N-MOSFET
Case: H-PSOF8L
Mounting: SMD
Power dissipation: 500W
Kind of package: reel; tape
Drain-source voltage: 150V
Drain current: 169A
On-state resistance: 17.5mΩ
Polarisation: unipolar
Gate charge: 90nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDBL86361-F085 ONSEMI fdbl86361_f085-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; 429W; H-PSOF8L
Application: automotive industry
Power dissipation: 429W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: H-PSOF8L
Drain-source voltage: 60V
Drain current: 300A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC2612 FDC2612 ONSEMI FDC2612.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 1.1A; 1.6W; SuperSOT-6
Mounting: SMD
Polarisation: unipolar
Power dissipation: 1.6W
Type of transistor: N-MOSFET
On-state resistance: 1.43Ω
Drain current: 1.1A
Drain-source voltage: 200V
Kind of package: reel; tape
Case: SuperSOT-6
Gate charge: 11nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC3512 ONSEMI fdc3512-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 3A; 1.6W; SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Case: SuperSOT-6
Drain-source voltage: 80V
Drain current: 3A
On-state resistance: 141mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC3601N FDC3601N ONSEMI fdc3601n-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 1A; 0.96W; SuperSOT-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 976mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC3612 ONSEMI fdc3612-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; 1.6W; SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Case: SuperSOT-6
Drain-source voltage: 100V
Drain current: 2.6A
On-state resistance: 0.24Ω
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC5614P FDC5614P ONSEMI FDC5614P-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4158 Stücke:
Lieferzeit 7-14 Tag (e)
129+0.56 EUR
149+ 0.48 EUR
213+ 0.34 EUR
226+ 0.32 EUR
Mindestbestellmenge: 129
FDC602P ONSEMI fdc602p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.5A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 53mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC604P FDC604P ONSEMI FDC604P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.5A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1994 Stücke:
Lieferzeit 7-14 Tag (e)
81+0.89 EUR
96+ 0.75 EUR
234+ 0.31 EUR
247+ 0.29 EUR
6000+ 0.28 EUR
Mindestbestellmenge: 81
FDC606P FDC606P ONSEMI FDC606P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -6A; 1.6W; SuperSOT-6
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Case: SuperSOT-6
Drain-source voltage: -12V
Drain current: -6A
On-state resistance: 53mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Gate charge: 25nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2857 Stücke:
Lieferzeit 7-14 Tag (e)
81+0.89 EUR
89+ 0.81 EUR
117+ 0.61 EUR
124+ 0.58 EUR
Mindestbestellmenge: 81
FDC608PZ FDC608PZ ONSEMI FDC608PZ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.8A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.8A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3024 Stücke:
Lieferzeit 7-14 Tag (e)
107+0.67 EUR
134+ 0.54 EUR
236+ 0.3 EUR
250+ 0.29 EUR
1000+ 0.28 EUR
Mindestbestellmenge: 107
FDC610PZ FDC610PZ ONSEMI FDC610PZ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.9A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±25V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2531 Stücke:
Lieferzeit 7-14 Tag (e)
107+0.67 EUR
235+ 0.3 EUR
248+ 0.29 EUR
Mindestbestellmenge: 107
FDC6301N FDC6301N ONSEMI FDC6301N.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.9W; SuperSOT-6
Mounting: SMD
Case: SuperSOT-6
Power dissipation: 0.9W
Kind of package: reel; tape
On-state resistance: 9Ω
Polarisation: unipolar
Gate charge: 0.7nC
Technology: PowerTrench®
Drain current: 0.22A
Drain-source voltage: 25V
Kind of channel: enhanced
Gate-source voltage: ±0.5V; ±8V
Type of transistor: N-MOSFET x2
Anzahl je Verpackung: 1 Stücke
auf Bestellung 542 Stücke:
Lieferzeit 7-14 Tag (e)
132+0.54 EUR
172+ 0.42 EUR
382+ 0.19 EUR
404+ 0.18 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 132
FDC6303N FDC6303N ONSEMI FDC6303N.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.68A; 0.9W; SuperSOT-6
Mounting: SMD
Case: SuperSOT-6
Power dissipation: 0.9W
Kind of package: reel; tape
On-state resistance: 0.8Ω
Polarisation: unipolar
Gate charge: 2.3nC
Technology: PowerTrench®
Drain current: 0.68A
Drain-source voltage: 25V
Kind of channel: enhanced
Gate-source voltage: ±8V
Type of transistor: N-MOSFET x2
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC6305N FDC6305N ONSEMI FDC6305N.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.7A; 0.96W; SuperSOT-6
Mounting: SMD
Case: SuperSOT-6
Power dissipation: 0.96W
Kind of package: reel; tape
On-state resistance: 128mΩ
Polarisation: unipolar
Gate charge: 5nC
Technology: PowerTrench®
Drain current: 2.7A
Drain-source voltage: 20V
Kind of channel: enhanced
Gate-source voltage: ±8V
Type of transistor: N-MOSFET x2
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1728 Stücke:
Lieferzeit 7-14 Tag (e)
99+0.73 EUR
164+ 0.44 EUR
178+ 0.4 EUR
206+ 0.35 EUR
219+ 0.33 EUR
500+ 0.32 EUR
Mindestbestellmenge: 99
FDC6310P FDC6310P ONSEMI fdc6310p-d.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.2A; 0.96W; SuperSOT-6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 184mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC6312P FDC6312P ONSEMI FDC6312P.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.3A; 0.96W; SuperSOT-6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1405 Stücke:
Lieferzeit 7-14 Tag (e)
93+0.77 EUR
204+ 0.35 EUR
215+ 0.33 EUR
Mindestbestellmenge: 93
FDC6318P FDC6318P ONSEMI FDC6318P.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -2.5A; 0.96W; SuperSOT-6
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.5A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2852 Stücke:
Lieferzeit 7-14 Tag (e)
94+0.76 EUR
108+ 0.67 EUR
123+ 0.58 EUR
130+ 0.55 EUR
500+ 0.54 EUR
3000+ 0.53 EUR
Mindestbestellmenge: 94
FDC6320C ONSEMI FAIRS15832-1.pdf?t.download=true&u=5oefqw fdc6320c-d.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 25/-25V
Drain current: 0.22/-0.12A
Power dissipation: 0.9W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 9/10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC6321C FDC6321C ONSEMI FDC6321C.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V
Type of transistor: N/P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 25/-25V
Drain current: 0.68/-0.46A
Power dissipation: 0.9W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 720/1220mΩ
Mounting: SMD
Gate charge: 2.3/1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1560 Stücke:
Lieferzeit 7-14 Tag (e)
100+0.72 EUR
120+ 0.6 EUR
197+ 0.36 EUR
209+ 0.34 EUR
Mindestbestellmenge: 100
FDC6323L FDC6323L ONSEMI FDC6323L.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; P-Channel; SMD; SuperSOT-6
Kind of package: reel; tape
Output current: 1.5A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Control voltage: 1.5...8V DC
Kind of integrated circuit: high-side
Mounting: SMD
Case: SuperSOT-6
Supply voltage: 3...8V DC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC6324L FDC6324L ONSEMI FDC6324L.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; P-Channel; SMD; SuperSOT-6
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Output current: 1.5A
Number of channels: 1
Control voltage: 1.5...8V DC
Kind of integrated circuit: high-side
Supply voltage: 3...20V DC
Type of integrated circuit: power switch
Kind of output: P-Channel
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2596 Stücke:
Lieferzeit 7-14 Tag (e)
78+0.93 EUR
117+ 0.61 EUR
166+ 0.43 EUR
176+ 0.41 EUR
Mindestbestellmenge: 78
FDC6326L ONSEMI fdc6326l-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; P-Channel; SMD; SuperSOT-6
Case: SuperSOT-6
On-state resistance: 0.125Ω
Mounting: SMD
Kind of package: reel; tape
Output current: 1.8A
Number of channels: 1
Control voltage: 2.5...8V DC
Kind of integrated circuit: high-side
Supply voltage: 3...20V DC
Type of integrated circuit: power switch
Kind of output: P-Channel
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC6327C FDC6327C ONSEMI fdc6327c-d.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 2.7/-1.9A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.13/0.27Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2475 Stücke:
Lieferzeit 7-14 Tag (e)
112+0.64 EUR
250+ 0.29 EUR
265+ 0.27 EUR
1000+ 0.26 EUR
Mindestbestellmenge: 112
FDC6329L FDC6329L ONSEMI FDC6329L.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.5A; Ch: 1; P-Channel; SMD; SuperSOT-6
Case: SuperSOT-6
On-state resistance: 0.105Ω
Mounting: SMD
Kind of package: reel; tape
Output current: 2.5A
Number of channels: 1
Control voltage: 1.5...8V DC
Kind of integrated circuit: high-side
Supply voltage: 2.5...8V DC
Type of integrated circuit: power switch
Kind of output: P-Channel
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC6330L FDC6330L ONSEMI fdc6330l-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 1; P-Channel; SMD; SuperSOT-6
Mounting: SMD
Supply voltage: 3...20V DC
On-state resistance: 0.125Ω
Output current: 2.3A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Kind of package: reel; tape
Control voltage: 1.5...8V DC
Kind of integrated circuit: high-side
Case: SuperSOT-6
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2934 Stücke:
Lieferzeit 7-14 Tag (e)
114+0.63 EUR
127+ 0.56 EUR
166+ 0.43 EUR
175+ 0.41 EUR
Mindestbestellmenge: 114
FDC6331L FDC6331L ONSEMI FDC6331L.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.8A; Ch: 1; P-Channel; SMD; SuperSOT-6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.8A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SuperSOT-6
On-state resistance: 0.1Ω
Kind of package: reel; tape
Supply voltage: -8...8V DC
Control voltage: -0.5...8V DC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2231 Stücke:
Lieferzeit 7-14 Tag (e)
46+1.56 EUR
91+ 0.79 EUR
120+ 0.6 EUR
159+ 0.45 EUR
168+ 0.43 EUR
Mindestbestellmenge: 46
FDC6333C FDC6333C ONSEMI FDC6333C.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Mounting: SMD
Drain-source voltage: 30/-30V
Drain current: 2.5/-2A
On-state resistance: 150/220mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 0.96W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 6.6/5.7nC
Technology: PowerTrench®
Case: SuperSOT-6
Kind of transistor: complementary pair
Kind of channel: enhanced
Gate-source voltage: ±16/±25V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 580 Stücke:
Lieferzeit 7-14 Tag (e)
103+0.7 EUR
118+ 0.61 EUR
252+ 0.28 EUR
265+ 0.27 EUR
Mindestbestellmenge: 103
FDC634P FDC634P ONSEMI FDC634P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC637AN FDC637AN ONSEMI FDC637AN.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Gate charge: 16nC
Case: SuperSOT-6
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
Power dissipation: 1.6W
Type of transistor: N-MOSFET
On-state resistance: 41mΩ
Drain current: 6.2A
Drain-source voltage: 20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2279 Stücke:
Lieferzeit 7-14 Tag (e)
76+0.94 EUR
137+ 0.52 EUR
145+ 0.49 EUR
Mindestbestellmenge: 76
FDC637BNZ FDC637BNZ ONSEMI FDC637BNZ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Gate charge: 12nC
Case: SuperSOT-6
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
Power dissipation: 1.6W
Type of transistor: N-MOSFET
On-state resistance: 41mΩ
Drain current: 6.2A
Drain-source voltage: 20V
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
FDC638APZ FDC638APZ ONSEMI FDC638APZ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 72mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC638P FDC638P ONSEMI FDC638P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 72mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3075 Stücke:
Lieferzeit 7-14 Tag (e)
105+0.69 EUR
124+ 0.58 EUR
218+ 0.33 EUR
231+ 0.31 EUR
Mindestbestellmenge: 105
FDC6401N FDC6401N ONSEMI FDC6401N.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3A; 0.96W; SuperSOT-6
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 106mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 0.96W
Polarisation: unipolar
Gate charge: 4.6nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: 20V
Drain current: 3A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2598 Stücke:
Lieferzeit 7-14 Tag (e)
103+0.7 EUR
131+ 0.55 EUR
170+ 0.42 EUR
180+ 0.4 EUR
Mindestbestellmenge: 103
FDC640P FDC640P ONSEMI FDC640P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 80mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 13nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -4.5A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC6420C FDC6420C ONSEMI FDC6420C.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 3/-2.2A
Power dissipation: 0.9W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 70/125mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC642P ONSEMI fdc642p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; 1.2W; SuperSOT-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Power dissipation: 1.2W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.105Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC645N FDC645N ONSEMI ONSM-S-A0003586841-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.5A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 48mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1668 Stücke:
Lieferzeit 7-14 Tag (e)
111+0.65 EUR
141+ 0.51 EUR
181+ 0.4 EUR
192+ 0.37 EUR
Mindestbestellmenge: 111
FDC653N FDC653N ONSEMI FDC653N.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1959 Stücke:
Lieferzeit 7-14 Tag (e)
105+0.69 EUR
140+ 0.51 EUR
174+ 0.41 EUR
184+ 0.39 EUR
Mindestbestellmenge: 105
FDC654P ONSEMI fdc654p-d.pdf FAIRS25220-1.pdf?t.download=true&u=5oefqw Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 0.115Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC655BN FDC655BN ONSEMI FDC655BN.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.3A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.3A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC6561AN FDC6561AN ONSEMI FDC6561AN.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.5A; 0.96W; SuperSOT-6
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 2.5A
On-state resistance: 152mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 0.96W
Polarisation: unipolar
Gate charge: 3.2nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SuperSOT-6
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2615 Stücke:
Lieferzeit 7-14 Tag (e)
91+0.79 EUR
110+ 0.65 EUR
212+ 0.34 EUR
224+ 0.32 EUR
1000+ 0.31 EUR
Mindestbestellmenge: 91
FDC658AP FDC658AP ONSEMI FDC658AP.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
Case: SuperSOT-6
On-state resistance: 75mΩ
Power dissipation: 1.6W
Gate charge: 8.1nC
Polarisation: unipolar
Technology: PowerTrench®
Features of semiconductor devices: logic level
Drain current: -4A
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC658P FDC658P ONSEMI FDC658P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: SuperSOT-6
On-state resistance: 80mΩ
Power dissipation: 1.6W
Gate charge: 12nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -4A
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC855N ONSEMI fdc855n-d.pdf FAIRS25772-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.1A; Idm: 20A; 1.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.1A
Pulsed drain current: 20A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 39.3mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC8601 ONSEMI fdc8601-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 183mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC8602 ONSEMI fdc8602-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 1.2A; Idm: 5A; 960mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.2A
Pulsed drain current: 5A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC86244 ONSEMI fdc86244-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.3A; Idm: 10A; 1.6W
Kind of package: reel; tape
Drain-source voltage: 150V
Drain current: 2.3A
On-state resistance: 273mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 10A
Mounting: SMD
Case: SuperSOT-6
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC8878 ONSEMI fdc8878-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC8886 ONSEMI fdc8886-d.pdf FAIR-S-A0002365754-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.5A; Idm: 25A; 1.6W
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.5A
Pulsed drain current: 25A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDD10AN06A0 FDD10AN06A0 ONSEMI FDD10AN06A0.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 135W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 135W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 4.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1834 Stücke:
Lieferzeit 7-14 Tag (e)
31+2.37 EUR
35+ 2.04 EUR
42+ 1.72 EUR
44+ 1.63 EUR
500+ 1.56 EUR
Mindestbestellmenge: 31
FDD10N20LZTM FDD10N20LZTM ONSEMI ONSM-S-A0003586474-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 4.5A; Idm: 30A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 4.5A
Pulsed drain current: 30A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDD120AN15A0 FDD120AN15A0 ONSEMI FDD120AN15A0.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 14A; 65W; DPAK
Power dissipation: 65W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 14.5nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DPAK
Drain-source voltage: 150V
Drain current: 14A
On-state resistance: 282mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1841 Stücke:
Lieferzeit 7-14 Tag (e)
55+1.3 EUR
80+ 0.9 EUR
99+ 0.73 EUR
114+ 0.63 EUR
121+ 0.59 EUR
Mindestbestellmenge: 55
FDD13AN06A0 FDD13AN06A0 ONSEMI FDD13AN06A0.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 115W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 115W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2760 Stücke:
Lieferzeit 7-14 Tag (e)
40+1.82 EUR
44+ 1.63 EUR
49+ 1.47 EUR
52+ 1.4 EUR
100+ 1.39 EUR
500+ 1.34 EUR
Mindestbestellmenge: 40
FDB44N25TM FDB44N25.pdf
FDB44N25TM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 26.4A; 307W; D2PAK
Polarisation: unipolar
Gate charge: 61nC
Technology: UniFET™
Kind of channel: enhanced
Gate-source voltage: ±30V
Mounting: SMD
Case: D2PAK
Drain-source voltage: 250V
Drain current: 26.4A
On-state resistance: 69mΩ
Type of transistor: N-MOSFET
Power dissipation: 307W
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 434 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
24+3.1 EUR
33+ 2.17 EUR
35+ 2.04 EUR
250+ 1.97 EUR
Mindestbestellmenge: 24
FDB52N20TM FDB52N20.pdf
FDB52N20TM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 52A; 357W; D2PAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 52A
Power dissipation: 357W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
5+14.3 EUR
9+ 7.95 EUR
23+ 3.1 EUR
Mindestbestellmenge: 5
FDB5800 FDB5800.pdf
FDB5800
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 242W; D2PAK
Technology: PowerTrench®
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 80A
On-state resistance: 12.6mΩ
Gate charge: 135nC
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 242W
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
auf Bestellung 725 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
21+3.52 EUR
23+ 3.13 EUR
28+ 2.57 EUR
30+ 2.43 EUR
Mindestbestellmenge: 21
FDB8447L fdb8447l-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 60W; D2PAK
Mounting: SMD
Power dissipation: 60W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: D2PAK
Drain-source voltage: 40V
Drain current: 50A
On-state resistance: 12.4mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDB86102LZ ONSM-S-A0003584116-1.pdf?t.download=true&u=5oefqw
FDB86102LZ
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 50A; 3.1W; D2PAK
Technology: UniFET™
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 3.1W
On-state resistance: 42mΩ
Polarisation: unipolar
Gate charge: 21nC
Gate-source voltage: ±20V
Pulsed drain current: 50A
Drain-source voltage: 100V
Drain current: 30A
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDB8896 FDB8896-D.pdf
Hersteller: ONSEMI
FDB8896 SMD N channel transistors
Produkt ist nicht verfügbar
FDBL0630N150 fdbl0630n150-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 169A; 500W; H-PSOF8L
Type of transistor: N-MOSFET
Case: H-PSOF8L
Mounting: SMD
Power dissipation: 500W
Kind of package: reel; tape
Drain-source voltage: 150V
Drain current: 169A
On-state resistance: 17.5mΩ
Polarisation: unipolar
Gate charge: 90nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDBL86361-F085 fdbl86361_f085-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; 429W; H-PSOF8L
Application: automotive industry
Power dissipation: 429W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: H-PSOF8L
Drain-source voltage: 60V
Drain current: 300A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC2612 FDC2612.pdf
FDC2612
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 1.1A; 1.6W; SuperSOT-6
Mounting: SMD
Polarisation: unipolar
Power dissipation: 1.6W
Type of transistor: N-MOSFET
On-state resistance: 1.43Ω
Drain current: 1.1A
Drain-source voltage: 200V
Kind of package: reel; tape
Case: SuperSOT-6
Gate charge: 11nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC3512 fdc3512-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 3A; 1.6W; SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Case: SuperSOT-6
Drain-source voltage: 80V
Drain current: 3A
On-state resistance: 141mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC3601N fdc3601n-d.pdf
FDC3601N
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 1A; 0.96W; SuperSOT-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 976mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC3612 fdc3612-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; 1.6W; SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Case: SuperSOT-6
Drain-source voltage: 100V
Drain current: 2.6A
On-state resistance: 0.24Ω
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC5614P FDC5614P-DTE.pdf
FDC5614P
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4158 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
129+0.56 EUR
149+ 0.48 EUR
213+ 0.34 EUR
226+ 0.32 EUR
Mindestbestellmenge: 129
FDC602P fdc602p-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.5A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 53mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC604P FDC604P.pdf
FDC604P
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.5A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1994 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
81+0.89 EUR
96+ 0.75 EUR
234+ 0.31 EUR
247+ 0.29 EUR
6000+ 0.28 EUR
Mindestbestellmenge: 81
FDC606P FDC606P.pdf
FDC606P
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -6A; 1.6W; SuperSOT-6
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Case: SuperSOT-6
Drain-source voltage: -12V
Drain current: -6A
On-state resistance: 53mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Gate charge: 25nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2857 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
81+0.89 EUR
89+ 0.81 EUR
117+ 0.61 EUR
124+ 0.58 EUR
Mindestbestellmenge: 81
FDC608PZ FDC608PZ.pdf
FDC608PZ
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.8A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.8A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3024 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
107+0.67 EUR
134+ 0.54 EUR
236+ 0.3 EUR
250+ 0.29 EUR
1000+ 0.28 EUR
Mindestbestellmenge: 107
FDC610PZ FDC610PZ.pdf
FDC610PZ
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.9A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±25V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2531 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
107+0.67 EUR
235+ 0.3 EUR
248+ 0.29 EUR
Mindestbestellmenge: 107
FDC6301N FDC6301N.pdf
FDC6301N
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.9W; SuperSOT-6
Mounting: SMD
Case: SuperSOT-6
Power dissipation: 0.9W
Kind of package: reel; tape
On-state resistance: 9Ω
Polarisation: unipolar
Gate charge: 0.7nC
Technology: PowerTrench®
Drain current: 0.22A
Drain-source voltage: 25V
Kind of channel: enhanced
Gate-source voltage: ±0.5V; ±8V
Type of transistor: N-MOSFET x2
Anzahl je Verpackung: 1 Stücke
auf Bestellung 542 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
132+0.54 EUR
172+ 0.42 EUR
382+ 0.19 EUR
404+ 0.18 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 132
FDC6303N FDC6303N.pdf
FDC6303N
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.68A; 0.9W; SuperSOT-6
Mounting: SMD
Case: SuperSOT-6
Power dissipation: 0.9W
Kind of package: reel; tape
On-state resistance: 0.8Ω
Polarisation: unipolar
Gate charge: 2.3nC
Technology: PowerTrench®
Drain current: 0.68A
Drain-source voltage: 25V
Kind of channel: enhanced
Gate-source voltage: ±8V
Type of transistor: N-MOSFET x2
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC6305N FDC6305N.pdf
FDC6305N
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.7A; 0.96W; SuperSOT-6
Mounting: SMD
Case: SuperSOT-6
Power dissipation: 0.96W
Kind of package: reel; tape
On-state resistance: 128mΩ
Polarisation: unipolar
Gate charge: 5nC
Technology: PowerTrench®
Drain current: 2.7A
Drain-source voltage: 20V
Kind of channel: enhanced
Gate-source voltage: ±8V
Type of transistor: N-MOSFET x2
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1728 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
99+0.73 EUR
164+ 0.44 EUR
178+ 0.4 EUR
206+ 0.35 EUR
219+ 0.33 EUR
500+ 0.32 EUR
Mindestbestellmenge: 99
FDC6310P fdc6310p-d.pdf
FDC6310P
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.2A; 0.96W; SuperSOT-6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 184mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC6312P FDC6312P.pdf
FDC6312P
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.3A; 0.96W; SuperSOT-6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1405 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
93+0.77 EUR
204+ 0.35 EUR
215+ 0.33 EUR
Mindestbestellmenge: 93
FDC6318P FDC6318P.pdf
FDC6318P
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -2.5A; 0.96W; SuperSOT-6
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.5A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2852 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
94+0.76 EUR
108+ 0.67 EUR
123+ 0.58 EUR
130+ 0.55 EUR
500+ 0.54 EUR
3000+ 0.53 EUR
Mindestbestellmenge: 94
FDC6320C FAIRS15832-1.pdf?t.download=true&u=5oefqw fdc6320c-d.pdf
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 25/-25V
Drain current: 0.22/-0.12A
Power dissipation: 0.9W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 9/10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC6321C FDC6321C.pdf
FDC6321C
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V
Type of transistor: N/P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 25/-25V
Drain current: 0.68/-0.46A
Power dissipation: 0.9W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 720/1220mΩ
Mounting: SMD
Gate charge: 2.3/1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1560 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
100+0.72 EUR
120+ 0.6 EUR
197+ 0.36 EUR
209+ 0.34 EUR
Mindestbestellmenge: 100
FDC6323L FDC6323L.pdf
FDC6323L
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; P-Channel; SMD; SuperSOT-6
Kind of package: reel; tape
Output current: 1.5A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Control voltage: 1.5...8V DC
Kind of integrated circuit: high-side
Mounting: SMD
Case: SuperSOT-6
Supply voltage: 3...8V DC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC6324L FDC6324L.pdf
FDC6324L
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; P-Channel; SMD; SuperSOT-6
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Output current: 1.5A
Number of channels: 1
Control voltage: 1.5...8V DC
Kind of integrated circuit: high-side
Supply voltage: 3...20V DC
Type of integrated circuit: power switch
Kind of output: P-Channel
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2596 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
78+0.93 EUR
117+ 0.61 EUR
166+ 0.43 EUR
176+ 0.41 EUR
Mindestbestellmenge: 78
FDC6326L fdc6326l-d.pdf
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; P-Channel; SMD; SuperSOT-6
Case: SuperSOT-6
On-state resistance: 0.125Ω
Mounting: SMD
Kind of package: reel; tape
Output current: 1.8A
Number of channels: 1
Control voltage: 2.5...8V DC
Kind of integrated circuit: high-side
Supply voltage: 3...20V DC
Type of integrated circuit: power switch
Kind of output: P-Channel
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC6327C fdc6327c-d.pdf
FDC6327C
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 2.7/-1.9A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.13/0.27Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2475 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
112+0.64 EUR
250+ 0.29 EUR
265+ 0.27 EUR
1000+ 0.26 EUR
Mindestbestellmenge: 112
FDC6329L FDC6329L.pdf
FDC6329L
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.5A; Ch: 1; P-Channel; SMD; SuperSOT-6
Case: SuperSOT-6
On-state resistance: 0.105Ω
Mounting: SMD
Kind of package: reel; tape
Output current: 2.5A
Number of channels: 1
Control voltage: 1.5...8V DC
Kind of integrated circuit: high-side
Supply voltage: 2.5...8V DC
Type of integrated circuit: power switch
Kind of output: P-Channel
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC6330L fdc6330l-d.pdf
FDC6330L
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 1; P-Channel; SMD; SuperSOT-6
Mounting: SMD
Supply voltage: 3...20V DC
On-state resistance: 0.125Ω
Output current: 2.3A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Kind of package: reel; tape
Control voltage: 1.5...8V DC
Kind of integrated circuit: high-side
Case: SuperSOT-6
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2934 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
114+0.63 EUR
127+ 0.56 EUR
166+ 0.43 EUR
175+ 0.41 EUR
Mindestbestellmenge: 114
FDC6331L FDC6331L.pdf
FDC6331L
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.8A; Ch: 1; P-Channel; SMD; SuperSOT-6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.8A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SuperSOT-6
On-state resistance: 0.1Ω
Kind of package: reel; tape
Supply voltage: -8...8V DC
Control voltage: -0.5...8V DC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2231 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
46+1.56 EUR
91+ 0.79 EUR
120+ 0.6 EUR
159+ 0.45 EUR
168+ 0.43 EUR
Mindestbestellmenge: 46
FDC6333C FDC6333C.pdf
FDC6333C
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Mounting: SMD
Drain-source voltage: 30/-30V
Drain current: 2.5/-2A
On-state resistance: 150/220mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 0.96W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 6.6/5.7nC
Technology: PowerTrench®
Case: SuperSOT-6
Kind of transistor: complementary pair
Kind of channel: enhanced
Gate-source voltage: ±16/±25V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 580 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
103+0.7 EUR
118+ 0.61 EUR
252+ 0.28 EUR
265+ 0.27 EUR
Mindestbestellmenge: 103
FDC634P FDC634P.pdf
FDC634P
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC637AN FDC637AN.pdf
FDC637AN
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Gate charge: 16nC
Case: SuperSOT-6
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
Power dissipation: 1.6W
Type of transistor: N-MOSFET
On-state resistance: 41mΩ
Drain current: 6.2A
Drain-source voltage: 20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2279 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
76+0.94 EUR
137+ 0.52 EUR
145+ 0.49 EUR
Mindestbestellmenge: 76
FDC637BNZ FDC637BNZ.pdf
FDC637BNZ
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Gate charge: 12nC
Case: SuperSOT-6
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Polarisation: unipolar
Power dissipation: 1.6W
Type of transistor: N-MOSFET
On-state resistance: 41mΩ
Drain current: 6.2A
Drain-source voltage: 20V
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
FDC638APZ FDC638APZ.pdf
FDC638APZ
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 72mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC638P FDC638P.pdf
FDC638P
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 72mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3075 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
105+0.69 EUR
124+ 0.58 EUR
218+ 0.33 EUR
231+ 0.31 EUR
Mindestbestellmenge: 105
FDC6401N FDC6401N.pdf
FDC6401N
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3A; 0.96W; SuperSOT-6
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 106mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 0.96W
Polarisation: unipolar
Gate charge: 4.6nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: 20V
Drain current: 3A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2598 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
103+0.7 EUR
131+ 0.55 EUR
170+ 0.42 EUR
180+ 0.4 EUR
Mindestbestellmenge: 103
FDC640P FDC640P.pdf
FDC640P
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 80mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 13nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -4.5A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC6420C FDC6420C.pdf
FDC6420C
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 3/-2.2A
Power dissipation: 0.9W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 70/125mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC642P fdc642p-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; 1.2W; SuperSOT-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Power dissipation: 1.2W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.105Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC645N ONSM-S-A0003586841-1.pdf?t.download=true&u=5oefqw
FDC645N
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.5A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 48mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1668 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
111+0.65 EUR
141+ 0.51 EUR
181+ 0.4 EUR
192+ 0.37 EUR
Mindestbestellmenge: 111
FDC653N FDC653N.pdf
FDC653N
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1959 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
105+0.69 EUR
140+ 0.51 EUR
174+ 0.41 EUR
184+ 0.39 EUR
Mindestbestellmenge: 105
FDC654P fdc654p-d.pdf FAIRS25220-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 0.115Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC655BN FDC655BN.pdf
FDC655BN
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.3A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.3A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC6561AN FDC6561AN.pdf
FDC6561AN
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.5A; 0.96W; SuperSOT-6
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 2.5A
On-state resistance: 152mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 0.96W
Polarisation: unipolar
Gate charge: 3.2nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SuperSOT-6
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2615 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
91+0.79 EUR
110+ 0.65 EUR
212+ 0.34 EUR
224+ 0.32 EUR
1000+ 0.31 EUR
Mindestbestellmenge: 91
FDC658AP FDC658AP.pdf
FDC658AP
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±25V
Case: SuperSOT-6
On-state resistance: 75mΩ
Power dissipation: 1.6W
Gate charge: 8.1nC
Polarisation: unipolar
Technology: PowerTrench®
Features of semiconductor devices: logic level
Drain current: -4A
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC658P FDC658P.pdf
FDC658P
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: SuperSOT-6
On-state resistance: 80mΩ
Power dissipation: 1.6W
Gate charge: 12nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -4A
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC855N fdc855n-d.pdf FAIRS25772-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.1A; Idm: 20A; 1.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.1A
Pulsed drain current: 20A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 39.3mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC8601 fdc8601-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 183mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC8602 fdc8602-d.pdf
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 1.2A; Idm: 5A; 960mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.2A
Pulsed drain current: 5A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC86244 fdc86244-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.3A; Idm: 10A; 1.6W
Kind of package: reel; tape
Drain-source voltage: 150V
Drain current: 2.3A
On-state resistance: 273mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 6nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 10A
Mounting: SMD
Case: SuperSOT-6
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC8878 fdc8878-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDC8886 fdc8886-d.pdf FAIR-S-A0002365754-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.5A; Idm: 25A; 1.6W
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.5A
Pulsed drain current: 25A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDD10AN06A0 FDD10AN06A0.pdf
FDD10AN06A0
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 135W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 135W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 4.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1834 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
31+2.37 EUR
35+ 2.04 EUR
42+ 1.72 EUR
44+ 1.63 EUR
500+ 1.56 EUR
Mindestbestellmenge: 31
FDD10N20LZTM ONSM-S-A0003586474-1.pdf?t.download=true&u=5oefqw
FDD10N20LZTM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 4.5A; Idm: 30A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 4.5A
Pulsed drain current: 30A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDD120AN15A0 FDD120AN15A0.pdf
FDD120AN15A0
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 14A; 65W; DPAK
Power dissipation: 65W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 14.5nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DPAK
Drain-source voltage: 150V
Drain current: 14A
On-state resistance: 282mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1841 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
55+1.3 EUR
80+ 0.9 EUR
99+ 0.73 EUR
114+ 0.63 EUR
121+ 0.59 EUR
Mindestbestellmenge: 55
FDD13AN06A0 FDD13AN06A0.pdf
FDD13AN06A0
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 115W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 115W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2760 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
40+1.82 EUR
44+ 1.63 EUR
49+ 1.47 EUR
52+ 1.4 EUR
100+ 1.39 EUR
500+ 1.34 EUR
Mindestbestellmenge: 40
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