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FDC6301N ON Semiconductor
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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3000+ | 0.15 EUR |
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Technische Details FDC6301N ON Semiconductor
Description: MOSFET 2N-CH 25V 0.22A SSOT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 700mW, Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 220mA, Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V, Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SuperSOT™-6, Part Status: Active.
Weitere Produktangebote FDC6301N nach Preis ab 0.15 EUR bis 0.74 EUR
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FDC6301N | Hersteller : ON Semiconductor |
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auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC6301N | Hersteller : ON Semiconductor |
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auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC6301N | Hersteller : ON Semiconductor |
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auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC6301N | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 220mA Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Active |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDC6301N | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.9W; SuperSOT-6 Kind of package: reel; tape Drain-source voltage: 25V Drain current: 0.22A On-state resistance: 9Ω Type of transistor: N-MOSFET x2 Power dissipation: 0.9W Polarisation: unipolar Gate charge: 0.7nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±0.5V; ±8V Mounting: SMD Case: SuperSOT-6 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 542 Stücke: Lieferzeit 7-14 Tag (e) |
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FDC6301N | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.9W; SuperSOT-6 Kind of package: reel; tape Drain-source voltage: 25V Drain current: 0.22A On-state resistance: 9Ω Type of transistor: N-MOSFET x2 Power dissipation: 0.9W Polarisation: unipolar Gate charge: 0.7nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±0.5V; ±8V Mounting: SMD Case: SuperSOT-6 |
auf Bestellung 542 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC6301N | Hersteller : onsemi / Fairchild |
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auf Bestellung 29757 Stücke: Lieferzeit 10-14 Tag (e) |
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FDC6301N | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 220mA Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Active |
auf Bestellung 13349 Stücke: Lieferzeit 10-14 Tag (e) |
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FDC6301N | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FDC6301N | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |