FDC8601 onsemi
Hersteller: onsemiDescription: MOSFET N-CH 100V 2.7A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 109mOhm @ 2.7A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 50 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.94 EUR |
| 6000+ | 0.9 EUR |
| 9000+ | 0.86 EUR |
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Technische Details FDC8601 onsemi
Description: MOSFET N-CH 100V 2.7A SUPERSOT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), Rds On (Max) @ Id, Vgs: 109mOhm @ 2.7A, 10V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SuperSOT™-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 50 V.
Weitere Produktangebote FDC8601 nach Preis ab 0.9 EUR bis 2.29 EUR
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FDC8601 | Hersteller : onsemi / Fairchild |
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auf Bestellung 15483 Stücke: Lieferzeit 10-14 Tag (e) |
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FDC8601 | Hersteller : onsemi |
Description: MOSFET N-CH 100V 2.7A SUPERSOT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 109mOhm @ 2.7A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 50 V |
auf Bestellung 16540 Stücke: Lieferzeit 10-14 Tag (e) |
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FDC8601 | Hersteller : ON Semiconductor |
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FDC8601 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 2.7A 6-Pin TSOT-23 T/R |
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FDC8601 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 2.7A 6-Pin TSOT-23 T/R |
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| FDC8601 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; 1.6W; SuperSOT-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.7A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 183mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FDC8601 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; 1.6W; SuperSOT-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.7A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 183mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |