FDC8886 onsemi
Hersteller: onsemiDescription: MOSFET N-CH 30V 6.5/8A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 8A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 15 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.27 EUR |
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Technische Details FDC8886 onsemi
Description: MOSFET N-CH 30V 6.5/8A SUPERSOT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 8A (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 10V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SuperSOT™-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 15 V.
Weitere Produktangebote FDC8886 nach Preis ab 0.21 EUR bis 0.67 EUR
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FDC8886 | Hersteller : Fairchild Semiconductor |
Description: SMALL SIGNAL FIELD-EFFECT TRANSI Packaging: Bulk Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 8A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SuperSOT™-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 15 V |
auf Bestellung 133596 Stücke: Lieferzeit 10-14 Tag (e) |
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FDC8886 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 6.5A 6-Pin TSOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC8886 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 6.5A 6-Pin TSOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC8886 | Hersteller : onsemi / Fairchild |
MOSFETs 30V N-Channel Power Trench MOSFET |
auf Bestellung 7306 Stücke: Lieferzeit 10-14 Tag (e) |
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FDC8886 | Hersteller : onsemi |
Description: MOSFET N-CH 30V 6.5/8A SUPERSOT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 8A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 15 V |
auf Bestellung 35823 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDC8886 | Hersteller : ON Semiconductor |
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auf Bestellung 8980 Stücke: Lieferzeit 21-28 Tag (e) |
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FDC8886 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 6.5A 6-Pin TSOT-23 T/R |
Produkt ist nicht verfügbar |
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FDC8886 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 6.5A 6-Pin TSOT-23 T/R |
Produkt ist nicht verfügbar |
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FDC8886 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 6.5A 6-Pin TSOT-23 T/R |
Produkt ist nicht verfügbar |
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FDC8886 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 6.5A 6-Pin TSOT-23 T/R |
Produkt ist nicht verfügbar |
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| FDC8886 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.5A; Idm: 25A; 1.6W Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.5A Pulsed drain current: 25A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: SMD Gate charge: 7.4nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FDC8886 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.5A; Idm: 25A; 1.6W Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.5A Pulsed drain current: 25A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: SMD Gate charge: 7.4nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |