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FCH76N60N FCH76N60N ONSEMI FAIRS46023-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48.1A; Idm: 228A; 543W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48.1A
Pulsed drain current: 228A
Power dissipation: 543W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FCH76N60NF ONSEMI FAIRS46691-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 46A; Idm: 218A; 543W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 46A
Pulsed drain current: 218A
Power dissipation: 543W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 28.7mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FCHD040N65S3-F155 ONSEMI fchd040n65s3-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 41A; Idm: 162.5A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 41A
Pulsed drain current: 162.5A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 35.4Ω/4mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FCMT299N60 ONSEMI fcmt299n60-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.9A; Idm: 36A; 125W; Power88
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.9A
Pulsed drain current: 36A
Power dissipation: 125W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FCP067N65S3 FCP067N65S3 ONSEMI fcp067n65s3-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 28A; Idm: 110A; 312W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 312W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 67mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FCP104N60 FCP104N60 ONSEMI fcp104n60-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 111A; 357W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Pulsed drain current: 111A
Power dissipation: 357W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.104Ω
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FCP104N60F FCP104N60F ONSEMI fcp104n60f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 357W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.104Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FCP11N60 FCP11N60 ONSEMI FCP11N60.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 125W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 123 Stücke:
Lieferzeit 7-14 Tag (e)
22+3.39 EUR
24+ 3.02 EUR
28+ 2.6 EUR
30+ 2.46 EUR
250+ 2.36 EUR
Mindestbestellmenge: 22
FCP16N60 FCP16N60 ONSEMI fcp16n60-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.1A; Idm: 48A; 167W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Pulsed drain current: 48A
Power dissipation: 167W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FCP20N60 FCP20N60 ONSEMI FCP20N60.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.75 EUR
11+ 6.66 EUR
16+ 4.6 EUR
17+ 4.35 EUR
Mindestbestellmenge: 10
FCP22N60N FCP22N60N ONSEMI FCP22N60N.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 205W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperMOS®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 205W
Case: TO220AB
Gate-source voltage: ±45V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FCP36N60N FCP36N60N ONSEMI FCPx36N60N.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22.7A; 312W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperMOS®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22.7A
Power dissipation: 312W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 81mΩ
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
FCPF11N60 FCPF11N60 ONSEMI FCP11N60.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 32 Stücke:
Lieferzeit 7-14 Tag (e)
23+3.19 EUR
32+ 2.23 EUR
500+ 2.04 EUR
1000+ 2 EUR
Mindestbestellmenge: 23
FCPF11N60F FCPF11N60F ONSEMI fcpf11n60f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 7A; Idm: 33A; 36W
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 33A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FCPF11N60T FCPF11N60T ONSEMI fcpf11n60t-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 7A; Idm: 33A; 36W
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 33A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FCPF1300N80Z FCPF1300N80Z ONSEMI FCPF1300N80Z.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.5A; 24W; TO220FP
Mounting: THT
Kind of package: tube
Drain-source voltage: 800V
Drain current: 2.5A
On-state resistance: 1.3Ω
Type of transistor: N-MOSFET
Power dissipation: 24W
Polarisation: unipolar
Gate charge: 21nC
Technology: SuperFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO220FP
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FCPF16N60 FCPF16N60 ONSEMI fcp16n60-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 10.1A; Idm: 48A
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Pulsed drain current: 48A
Power dissipation: 37.9W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FCPF190N60 ONSEMI fcpf190n60-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 121 Stücke:
Lieferzeit 7-14 Tag (e)
14+5.16 EUR
99+ 4.65 EUR
Mindestbestellmenge: 14
FCPF20N60 FCPF20N60 ONSEMI FCP20N60.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; Idm: 60A; 39W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Pulsed drain current: 60A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 47 Stücke:
Lieferzeit 7-14 Tag (e)
11+6.65 EUR
12+ 5.98 EUR
16+ 4.58 EUR
17+ 4.33 EUR
Mindestbestellmenge: 11
FCPF380N60E ONSEMI ONSM-S-A0003584055-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 508 Stücke:
Lieferzeit 7-14 Tag (e)
28+2.57 EUR
250+ 2.23 EUR
Mindestbestellmenge: 28
FCPF400N80Z FCPF400N80Z ONSEMI FCPF400N80Z.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6.9A; 35.7W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.9A
Power dissipation: 35.7W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)
7+10.21 EUR
8+ 8.94 EUR
22+ 3.25 EUR
250+ 2.03 EUR
Mindestbestellmenge: 7
FCPF7N60 ONSEMI fcpf7n60-d.pdf FCPF7N60-ONS THT N channel transistors
Produkt ist nicht verfügbar
FDA032N08 ONSEMI fda032n08-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 120A; Idm: 940A; 37.5W; TO3PN
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 120A
Pulsed drain current: 940A
Power dissipation: 37.5W
Case: TO3PN
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Gate charge: 0.22µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDA16N50-F109 FDA16N50-F109 ONSEMI FDA16N50_F109.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.9A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 450 Stücke
Produkt ist nicht verfügbar
FDA16N50LDTU ONSEMI FAIR-S-A0002365536-1.pdf?t.download=true&u=5oefqw fda16n50ldtu-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.3A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDA24N40F FDA24N40F ONSEMI fda24n40f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 13.8A; Idm: 92A; 235W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 13.8A
Pulsed drain current: 92A
Power dissipation: 235W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDA24N50F FDA24N50F ONSEMI fda24n50f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 96A; 270W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 96A
Power dissipation: 270W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDA28N50 ONSEMI fda28n50-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; Idm: 112A; 310W; TO3PN
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 17A
Pulsed drain current: 112A
Power dissipation: 310W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 155mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDA38N30 ONSEMI fda38n30-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 22A; Idm: 150A; 312W; TO3PN
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 22A
Pulsed drain current: 150A
Power dissipation: 312W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDA59N25 FDA59N25 ONSEMI fda59n25-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 35A; Idm: 236A; 392W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 35A
Pulsed drain current: 236A
Power dissipation: 392W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)
11+6.51 EUR
15+ 4.76 EUR
30+ 3 EUR
120+ 2.97 EUR
Mindestbestellmenge: 11
FDA59N30 FDA59N30 ONSEMI FAIRS47594-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 35A; Idm: 236A; 500W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 35A
Pulsed drain current: 236A
Power dissipation: 500W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
1+71.5 EUR
5+ 14.3 EUR
14+ 5.11 EUR
30+ 3.27 EUR
120+ 3.16 EUR
FDA69N25 FDA69N25 ONSEMI FAIRS47564-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 44.2A; Idm: 276A; 480W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 44.2A
Pulsed drain current: 276A
Power dissipation: 480W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDA70N20 ONSEMI fda70n20-d.pdf FAIRS46388-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 45A; Idm: 280A; 417W; TO3PN
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 45A
Pulsed drain current: 280A
Power dissipation: 417W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDB0190N807L FDB0190N807L ONSEMI fdb0190n807l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 190A; Idm: 1440A; 250W; D2PAK-6
Mounting: SMD
Gate charge: 249nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1.44kA
Case: D2PAK-6
Drain-source voltage: 80V
Drain current: 190A
On-state resistance: 4.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDB024N06 FDB024N06 ONSEMI fdb024n06-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 190A; Idm: 1060A; 395W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 190A
Pulsed drain current: 1060A
Power dissipation: 395W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 226nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDB024N08BL7 ONSEMI fdb024n08bl7-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 162A; Idm: 916A; 246W; D2PAK
Mounting: SMD
Power dissipation: 246W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 178nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 916A
Case: D2PAK
Drain-source voltage: 80V
Drain current: 162A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDB035AN06A0 FDB035AN06A0 ONSEMI FDB035AN06A0.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 310W; D2PAK
On-state resistance: 7.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 310W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 124nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: D2PAK
Drain-source voltage: 60V
Drain current: 80A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 225 Stücke:
Lieferzeit 7-14 Tag (e)
13+5.56 EUR
15+ 4.82 EUR
100+ 4.65 EUR
500+ 4.63 EUR
Mindestbestellmenge: 13
FDB035N10A FDB035N10A ONSEMI fdb035n10a-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 856A; 333W; D2PAK
On-state resistance: 3.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 333W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 116nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 856A
Mounting: SMD
Case: D2PAK
Drain-source voltage: 100V
Drain current: 120A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDB045AN08A0 FDB045AN08A0 ONSEMI FDB045AN08A0.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 90A; 310W; D2PAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 90A
Power dissipation: 310W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 138nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
18+4.16 EUR
20+ 3.68 EUR
23+ 3.16 EUR
24+ 2.99 EUR
Mindestbestellmenge: 18
FDB047N10 ONSEMI FAIRS46508-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 164A; Idm: 656A; 375W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 164A
Pulsed drain current: 656A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 0.21µC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDB070AN06A0 FDB070AN06A0 ONSEMI FDB070AN06A0.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 175W; D2PAK
Mounting: SMD
Drain-source voltage: 60V
Drain current: 80A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 175W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 66nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: D2PAK
Anzahl je Verpackung: 1 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)
18+3.98 EUR
800+ 2.6 EUR
Mindestbestellmenge: 18
FDB075N15A-F085 ONSEMI fdb075n15a_f085-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 333W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 110A
Power dissipation: 333W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
FDB082N15A FDB082N15A ONSEMI fdb082n15a-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; Idm: 468A; 294W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Power dissipation: 294W
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 468A
Drain-source voltage: 150V
Drain current: 83A
On-state resistance: 8.2mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 84nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDB088N08 ONSEMI fdb088n08-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 60A; Idm: 340A; 160W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Power dissipation: 160W
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 340A
Drain-source voltage: 75V
Drain current: 60A
On-state resistance: 8.8mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 118nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDB110N15A ONSEMI ONSM-S-A0003584030-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 65A; Idm: 369A; 234W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 65A
Pulsed drain current: 369A
Power dissipation: 234W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDB120N10 ONSEMI fdb120n10-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 296A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Pulsed drain current: 296A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDB12N50FTM-WS FDB12N50FTM-WS ONSEMI fdb12n50f-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.9A
Pulsed drain current: 46A
Power dissipation: 165W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDB12N50TM ONSEMI fdb12n50tm-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.9A
Pulsed drain current: 46A
Power dissipation: 165W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDB13AN06A0 FDB13AN06A0 ONSEMI FDB13AN06A0.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 62A; 115W; D2PAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 62A
Power dissipation: 115W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDB15N50 FDB15N50 ONSEMI FDB15N50.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.33Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDB20N50F ONSEMI fdb20n50f-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.9A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDB2532 FDB2532 ONSEMI FDX2532-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 56A; 310W; D2PAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 56A
Power dissipation: 310W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 376 Stücke:
Lieferzeit 7-14 Tag (e)
15+4.88 EUR
21+ 3.5 EUR
22+ 3.3 EUR
800+ 3.25 EUR
Mindestbestellmenge: 15
FDB2552 ONSEMI fdp2552-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 26A; 150W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 26A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDB2572 FDB2572 ONSEMI FDB2572.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 29A; 135W; D2PAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 29A
Power dissipation: 135W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 146mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 795 Stücke:
Lieferzeit 7-14 Tag (e)
35+2.04 EUR
40+ 1.82 EUR
43+ 1.67 EUR
44+ 1.64 EUR
46+ 1.59 EUR
100+ 1.52 EUR
Mindestbestellmenge: 35
FDB2614 FDB2614 ONSEMI FDB2614.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 62A; 260W; D2PAK
Mounting: SMD
Case: D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 99nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±30V
Power dissipation: 260W
Drain-source voltage: 200V
Drain current: 62A
On-state resistance: 27mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDB2710 FDB2710 ONSEMI FDB2710.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 260W; D2PAK
Mounting: SMD
Power dissipation: 260W
Gate charge: 101nC
Polarisation: unipolar
Drain current: 50A
Kind of channel: enhanced
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: D2PAK
On-state resistance: 36.3mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDB28N30TM FDB28N30TM ONSEMI FDB28N30TM.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 28A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 28A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.129Ω
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 658 Stücke:
Lieferzeit 7-14 Tag (e)
35+2.07 EUR
40+ 1.83 EUR
45+ 1.62 EUR
47+ 1.53 EUR
800+ 1.47 EUR
Mindestbestellmenge: 35
FDB33N25TM FDB33N25TM ONSEMI FDB33N25.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 33A; 235W; D2PAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 33A
Power dissipation: 235W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDB3632 FDB3632 ONSEMI FDB3632.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 310W; D2PAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 310W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDB3652 FDB3652 ONSEMI FDB3652.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 61A; 150W; D2PAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 61A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 786 Stücke:
Lieferzeit 7-14 Tag (e)
30+2.42 EUR
34+ 2.14 EUR
41+ 1.74 EUR
44+ 1.66 EUR
Mindestbestellmenge: 30
FCH76N60N FAIRS46023-1.pdf?t.download=true&u=5oefqw
FCH76N60N
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48.1A; Idm: 228A; 543W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48.1A
Pulsed drain current: 228A
Power dissipation: 543W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FCH76N60NF FAIRS46691-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 46A; Idm: 218A; 543W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 46A
Pulsed drain current: 218A
Power dissipation: 543W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 28.7mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FCHD040N65S3-F155 fchd040n65s3-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 41A; Idm: 162.5A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 41A
Pulsed drain current: 162.5A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 35.4Ω/4mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FCMT299N60 fcmt299n60-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.9A; Idm: 36A; 125W; Power88
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.9A
Pulsed drain current: 36A
Power dissipation: 125W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FCP067N65S3 fcp067n65s3-d.pdf
FCP067N65S3
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 28A; Idm: 110A; 312W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 312W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 67mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FCP104N60 fcp104n60-d.pdf
FCP104N60
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 111A; 357W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Pulsed drain current: 111A
Power dissipation: 357W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.104Ω
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FCP104N60F fcp104n60f-d.pdf
FCP104N60F
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 357W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.104Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FCP11N60 FCP11N60.pdf
FCP11N60
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 125W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 123 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
22+3.39 EUR
24+ 3.02 EUR
28+ 2.6 EUR
30+ 2.46 EUR
250+ 2.36 EUR
Mindestbestellmenge: 22
FCP16N60 fcp16n60-d.pdf
FCP16N60
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.1A; Idm: 48A; 167W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Pulsed drain current: 48A
Power dissipation: 167W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FCP20N60 FCP20N60.pdf
FCP20N60
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
10+7.75 EUR
11+ 6.66 EUR
16+ 4.6 EUR
17+ 4.35 EUR
Mindestbestellmenge: 10
FCP22N60N FCP22N60N.pdf
FCP22N60N
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 205W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperMOS®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 205W
Case: TO220AB
Gate-source voltage: ±45V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FCP36N60N FCPx36N60N.pdf
FCP36N60N
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22.7A; 312W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperMOS®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22.7A
Power dissipation: 312W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 81mΩ
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
FCPF11N60 description FCP11N60.pdf
FCPF11N60
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 32 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
23+3.19 EUR
32+ 2.23 EUR
500+ 2.04 EUR
1000+ 2 EUR
Mindestbestellmenge: 23
FCPF11N60F fcpf11n60f-d.pdf
FCPF11N60F
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 7A; Idm: 33A; 36W
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 33A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FCPF11N60T fcpf11n60t-d.pdf
FCPF11N60T
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 7A; Idm: 33A; 36W
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 33A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FCPF1300N80Z FCPF1300N80Z.pdf
FCPF1300N80Z
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.5A; 24W; TO220FP
Mounting: THT
Kind of package: tube
Drain-source voltage: 800V
Drain current: 2.5A
On-state resistance: 1.3Ω
Type of transistor: N-MOSFET
Power dissipation: 24W
Polarisation: unipolar
Gate charge: 21nC
Technology: SuperFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO220FP
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FCPF16N60 fcp16n60-d.pdf
FCPF16N60
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 10.1A; Idm: 48A
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Pulsed drain current: 48A
Power dissipation: 37.9W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FCPF190N60 fcpf190n60-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 121 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
14+5.16 EUR
99+ 4.65 EUR
Mindestbestellmenge: 14
FCPF20N60 FCP20N60.pdf
FCPF20N60
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; Idm: 60A; 39W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Pulsed drain current: 60A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 47 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
11+6.65 EUR
12+ 5.98 EUR
16+ 4.58 EUR
17+ 4.33 EUR
Mindestbestellmenge: 11
FCPF380N60E ONSM-S-A0003584055-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 508 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
28+2.57 EUR
250+ 2.23 EUR
Mindestbestellmenge: 28
FCPF400N80Z FCPF400N80Z.pdf
FCPF400N80Z
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6.9A; 35.7W; TO220FP
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.9A
Power dissipation: 35.7W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
7+10.21 EUR
8+ 8.94 EUR
22+ 3.25 EUR
250+ 2.03 EUR
Mindestbestellmenge: 7
FCPF7N60 fcpf7n60-d.pdf
Hersteller: ONSEMI
FCPF7N60-ONS THT N channel transistors
Produkt ist nicht verfügbar
FDA032N08 fda032n08-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 120A; Idm: 940A; 37.5W; TO3PN
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 120A
Pulsed drain current: 940A
Power dissipation: 37.5W
Case: TO3PN
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Gate charge: 0.22µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDA16N50-F109 FDA16N50_F109.PDF
FDA16N50-F109
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.9A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 450 Stücke
Produkt ist nicht verfügbar
FDA16N50LDTU FAIR-S-A0002365536-1.pdf?t.download=true&u=5oefqw fda16n50ldtu-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.3A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDA24N40F fda24n40f-d.pdf
FDA24N40F
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 13.8A; Idm: 92A; 235W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 13.8A
Pulsed drain current: 92A
Power dissipation: 235W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDA24N50F fda24n50f-d.pdf
FDA24N50F
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 96A; 270W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 96A
Power dissipation: 270W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDA28N50 fda28n50-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; Idm: 112A; 310W; TO3PN
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 17A
Pulsed drain current: 112A
Power dissipation: 310W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 155mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDA38N30 fda38n30-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 22A; Idm: 150A; 312W; TO3PN
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 22A
Pulsed drain current: 150A
Power dissipation: 312W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDA59N25 fda59n25-d.pdf
FDA59N25
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 35A; Idm: 236A; 392W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 35A
Pulsed drain current: 236A
Power dissipation: 392W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
11+6.51 EUR
15+ 4.76 EUR
30+ 3 EUR
120+ 2.97 EUR
Mindestbestellmenge: 11
FDA59N30 FAIRS47594-1.pdf?t.download=true&u=5oefqw
FDA59N30
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 35A; Idm: 236A; 500W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 35A
Pulsed drain current: 236A
Power dissipation: 500W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1+71.5 EUR
5+ 14.3 EUR
14+ 5.11 EUR
30+ 3.27 EUR
120+ 3.16 EUR
FDA69N25 FAIRS47564-1.pdf?t.download=true&u=5oefqw
FDA69N25
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 44.2A; Idm: 276A; 480W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 44.2A
Pulsed drain current: 276A
Power dissipation: 480W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDA70N20 fda70n20-d.pdf FAIRS46388-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 45A; Idm: 280A; 417W; TO3PN
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 45A
Pulsed drain current: 280A
Power dissipation: 417W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDB0190N807L fdb0190n807l-d.pdf
FDB0190N807L
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 190A; Idm: 1440A; 250W; D2PAK-6
Mounting: SMD
Gate charge: 249nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1.44kA
Case: D2PAK-6
Drain-source voltage: 80V
Drain current: 190A
On-state resistance: 4.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDB024N06 fdb024n06-d.pdf
FDB024N06
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 190A; Idm: 1060A; 395W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 190A
Pulsed drain current: 1060A
Power dissipation: 395W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 226nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDB024N08BL7 fdb024n08bl7-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 162A; Idm: 916A; 246W; D2PAK
Mounting: SMD
Power dissipation: 246W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 178nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 916A
Case: D2PAK
Drain-source voltage: 80V
Drain current: 162A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDB035AN06A0 FDB035AN06A0.pdf
FDB035AN06A0
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 310W; D2PAK
On-state resistance: 7.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 310W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 124nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: D2PAK
Drain-source voltage: 60V
Drain current: 80A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 225 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
13+5.56 EUR
15+ 4.82 EUR
100+ 4.65 EUR
500+ 4.63 EUR
Mindestbestellmenge: 13
FDB035N10A fdb035n10a-d.pdf
FDB035N10A
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 856A; 333W; D2PAK
On-state resistance: 3.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 333W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 116nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 856A
Mounting: SMD
Case: D2PAK
Drain-source voltage: 100V
Drain current: 120A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDB045AN08A0 FDB045AN08A0.pdf
FDB045AN08A0
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 90A; 310W; D2PAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 90A
Power dissipation: 310W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 138nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
18+4.16 EUR
20+ 3.68 EUR
23+ 3.16 EUR
24+ 2.99 EUR
Mindestbestellmenge: 18
FDB047N10 FAIRS46508-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 164A; Idm: 656A; 375W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 164A
Pulsed drain current: 656A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 0.21µC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDB070AN06A0 FDB070AN06A0.pdf
FDB070AN06A0
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 175W; D2PAK
Mounting: SMD
Drain-source voltage: 60V
Drain current: 80A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
Power dissipation: 175W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 66nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: D2PAK
Anzahl je Verpackung: 1 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
18+3.98 EUR
800+ 2.6 EUR
Mindestbestellmenge: 18
FDB075N15A-F085 fdb075n15a_f085-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 333W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 110A
Power dissipation: 333W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
FDB082N15A fdb082n15a-d.pdf
FDB082N15A
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; Idm: 468A; 294W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Power dissipation: 294W
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 468A
Drain-source voltage: 150V
Drain current: 83A
On-state resistance: 8.2mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 84nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDB088N08 fdb088n08-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 60A; Idm: 340A; 160W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Power dissipation: 160W
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 340A
Drain-source voltage: 75V
Drain current: 60A
On-state resistance: 8.8mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 118nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDB110N15A ONSM-S-A0003584030-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 65A; Idm: 369A; 234W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 65A
Pulsed drain current: 369A
Power dissipation: 234W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDB120N10 fdb120n10-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 296A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Pulsed drain current: 296A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDB12N50FTM-WS fdb12n50f-d.pdf
FDB12N50FTM-WS
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.9A
Pulsed drain current: 46A
Power dissipation: 165W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDB12N50TM fdb12n50tm-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.9A
Pulsed drain current: 46A
Power dissipation: 165W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDB13AN06A0 FDB13AN06A0.pdf
FDB13AN06A0
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 62A; 115W; D2PAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 62A
Power dissipation: 115W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDB15N50 FDB15N50.pdf
FDB15N50
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.33Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDB20N50F fdb20n50f-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.9A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDB2532 FDX2532-DTE.pdf
FDB2532
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 56A; 310W; D2PAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 56A
Power dissipation: 310W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 376 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
15+4.88 EUR
21+ 3.5 EUR
22+ 3.3 EUR
800+ 3.25 EUR
Mindestbestellmenge: 15
FDB2552 fdp2552-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 26A; 150W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 26A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDB2572 FDB2572.pdf
FDB2572
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 29A; 135W; D2PAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 29A
Power dissipation: 135W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 146mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 795 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
35+2.04 EUR
40+ 1.82 EUR
43+ 1.67 EUR
44+ 1.64 EUR
46+ 1.59 EUR
100+ 1.52 EUR
Mindestbestellmenge: 35
FDB2614 FDB2614.pdf
FDB2614
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 62A; 260W; D2PAK
Mounting: SMD
Case: D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 99nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±30V
Power dissipation: 260W
Drain-source voltage: 200V
Drain current: 62A
On-state resistance: 27mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDB2710 FDB2710.pdf
FDB2710
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 260W; D2PAK
Mounting: SMD
Power dissipation: 260W
Gate charge: 101nC
Polarisation: unipolar
Drain current: 50A
Kind of channel: enhanced
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: D2PAK
On-state resistance: 36.3mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDB28N30TM FDB28N30TM.pdf
FDB28N30TM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 28A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 28A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.129Ω
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 658 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
35+2.07 EUR
40+ 1.83 EUR
45+ 1.62 EUR
47+ 1.53 EUR
800+ 1.47 EUR
Mindestbestellmenge: 35
FDB33N25TM FDB33N25.pdf
FDB33N25TM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 33A; 235W; D2PAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 33A
Power dissipation: 235W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDB3632 FDB3632.pdf
FDB3632
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 310W; D2PAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 310W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDB3652 FDB3652.pdf
FDB3652
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 61A; 150W; D2PAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 61A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 786 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
30+2.42 EUR
34+ 2.14 EUR
41+ 1.74 EUR
44+ 1.66 EUR
Mindestbestellmenge: 30
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