auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 44+ | 3.73 EUR |
| 48+ | 3.29 EUR |
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Technische Details FDA16N50LDTU ON Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, N, Packaging: Bulk, Package / Case: TO-3P-3, SC-65-3, Formed Leads, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 8.3A, 10V, Power Dissipation (Max): 205W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-3PN (L-Forming), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 25 V.
Weitere Produktangebote FDA16N50LDTU nach Preis ab 2.65 EUR bis 5.07 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FDA16N50LDTU | Hersteller : onsemi / Fairchild |
 MOSFET 500V MOSFET UniFET N-channel |
auf Bestellung 341 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDA16N50LDTU | Hersteller : Fairchild Semiconductor |
Description: POWER FIELD-EFFECT TRANSISTOR, N Packaging: Bulk Package / Case: TO-3P-3, SC-65-3, Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 8.3A, 10V Power Dissipation (Max): 205W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN (L-Forming) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 25 V |
auf Bestellung 28520 Stücke: Lieferzeit 10-14 Tag (e) |
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FDA16N50LDTU | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 500V 16.5A Tube |
Produkt ist nicht verfügbar |
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| FDA16N50LDTU | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; Idm: 66A; 205W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Kind of package: tube Kind of channel: enhanced Drain-source voltage: 500V Drain current: 3.3A On-state resistance: 0.38Ω Power dissipation: 205W Case: TO3PN Gate charge: 45nC Technology: DMOS; UniFET™ Gate-source voltage: ±30V Pulsed drain current: 66A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FDA16N50LDTU | Hersteller : onsemi |
Description: MOSFET N-CH 500V 16.5A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3, Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 8.3A, 10V Power Dissipation (Max): 205W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN (L-Forming) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 25 V |
Produkt ist nicht verfügbar |
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| FDA16N50LDTU | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; Idm: 66A; 205W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Kind of package: tube Kind of channel: enhanced Drain-source voltage: 500V Drain current: 3.3A On-state resistance: 0.38Ω Power dissipation: 205W Case: TO3PN Gate charge: 45nC Technology: DMOS; UniFET™ Gate-source voltage: ±30V Pulsed drain current: 66A |
Produkt ist nicht verfügbar |