![FDB33N25TM FDB33N25TM](https://static6.arrow.com/aropdfconversion/arrowimages/e837d3c39e2bf0f3c733378c5c6f7aecad0c218f/to-263.jpg)
FDB33N25TM ON Semiconductor
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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800+ | 1.53 EUR |
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Technische Details FDB33N25TM ON Semiconductor
Description: MOSFET N-CH 250V 33A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 94mOhm @ 16.5A, 10V, Power Dissipation (Max): 235W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2135 pF @ 25 V.
Weitere Produktangebote FDB33N25TM nach Preis ab 1.53 EUR bis 3.84 EUR
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FDB33N25TM | Hersteller : ON Semiconductor |
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auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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FDB33N25TM | Hersteller : onsemi / Fairchild |
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auf Bestellung 44 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB33N25TM | Hersteller : ON Semiconductor |
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auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) |
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FDB33N25TM | Hersteller : ON-Semicoductor |
![]() Anzahl je Verpackung: 10 Stücke |
auf Bestellung 60 Stücke: Lieferzeit 7-14 Tag (e) |
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FDB33N25TM | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FDB33N25TM | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FDB33N25TM | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 33A; 235W; D2PAK Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 250V Drain current: 33A Power dissipation: 235W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 94mΩ Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDB33N25TM | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 94mOhm @ 16.5A, 10V Power Dissipation (Max): 235W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2135 pF @ 25 V |
Produkt ist nicht verfügbar |
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FDB33N25TM | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 94mOhm @ 16.5A, 10V Power Dissipation (Max): 235W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2135 pF @ 25 V |
Produkt ist nicht verfügbar |
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FDB33N25TM | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 33A; 235W; D2PAK Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 250V Drain current: 33A Power dissipation: 235W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 94mΩ Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |