FCP16N60 ON Semiconductor
auf Bestellung 257 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 53+ | 2.94 EUR |
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Technische Details FCP16N60 ON Semiconductor
Description: MOSFET N-CH 600V 16A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 260mOhm @ 8A, 10V, Power Dissipation (Max): 167W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V.
Weitere Produktangebote FCP16N60 nach Preis ab 2.94 EUR bis 7.74 EUR
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FCP16N60 | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 600V 16A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 257 Stücke: Lieferzeit 14-21 Tag (e) |
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FCP16N60 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 16A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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FCP16N60 | Hersteller : onsemi |
Description: MOSFET N-CH 600V 16A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 8A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V |
auf Bestellung 4838 Stücke: Lieferzeit 10-14 Tag (e) |
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FCP16N60 | Hersteller : onsemi / Fairchild |
MOSFETs 600V N-CH MOSFET SuperFET |
auf Bestellung 900 Stücke: Lieferzeit 10-14 Tag (e) |
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auf Bestellung 16663 Stücke: Lieferzeit 21-28 Tag (e) |
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| FCP16N60 | Hersteller : ONSEMI |
Description: ONSEMI - FCP16N60 - MOSFET, N, TO-220 tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 12696 Stücke: Lieferzeit 14-21 Tag (e) |
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FCP16N60 Produktcode: 196557
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Lieblingsprodukt
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Transistoren > MOSFET N-CH |
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FCP16N60 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 16A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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FCP16N60 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 16A 3-Pin(3+Tab) TO-220 Tube |
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FCP16N60 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 16A 3-Pin(3+Tab) TO-220 Tube |
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FCP16N60 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 16A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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FCP16N60 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10.1A; Idm: 48A; 167W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.1A Power dissipation: 167W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 48A Gate charge: 70nC Anzahl je Verpackung: 1 Stücke |
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FCP16N60 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10.1A; Idm: 48A; 167W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.1A Power dissipation: 167W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 48A Gate charge: 70nC |
Produkt ist nicht verfügbar |