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FDB045AN08A0 ON Semiconductor
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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800+ | 2.58 EUR |
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Technische Details FDB045AN08A0 ON Semiconductor
Description: MOSFET N-CH 75V 19A/90A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 90A (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 80A, 10V, Power Dissipation (Max): 310W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V.
Weitere Produktangebote FDB045AN08A0 nach Preis ab 2.58 EUR bis 5.95 EUR
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FDB045AN08A0 | Hersteller : ON Semiconductor |
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auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDB045AN08A0 | Hersteller : ON Semiconductor |
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auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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FDB045AN08A0 | Hersteller : ON Semiconductor |
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auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDB045AN08A0 | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 90A; 310W; D2PAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 75V Drain current: 90A Power dissipation: 310W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 8.4mΩ Mounting: SMD Gate charge: 138nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
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FDB045AN08A0 | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 90A; 310W; D2PAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 75V Drain current: 90A Power dissipation: 310W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 8.4mΩ Mounting: SMD Gate charge: 138nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
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FDB045AN08A0 | Hersteller : onsemi / Fairchild |
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auf Bestellung 1048 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB045AN08A0 | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 90A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 80A, 10V Power Dissipation (Max): 310W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V |
auf Bestellung 381 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB045AN08A0 | Hersteller : ON Semiconductor |
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auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDB045AN08A0 | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FDB045AN08A0 | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FDB045AN08A0 | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 90A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 80A, 10V Power Dissipation (Max): 310W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V |
Produkt ist nicht verfügbar |