| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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FDT86113LZ | ONSEMI |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 3.3A; 2.2W; SOT223 Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Case: SOT223 Drain-source voltage: 100V Drain current: 3.3A On-state resistance: 189mΩ Type of transistor: N-MOSFET Power dissipation: 2.2W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FDU3N40TU | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 1.25A; Idm: 8A; 30W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 1.25A Pulsed drain current: 8A Power dissipation: 30W Case: IPAK Gate-source voltage: ±30V On-state resistance: 3.4Ω Mounting: THT Gate charge: 6nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDV301N | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 0.22A; 0.35W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 0.22A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 9Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke |
auf Bestellung 6322 Stücke: Lieferzeit 7-14 Tag (e) |
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FDV303N | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 0.68A; 0.35W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 0.68A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.8Ω Mounting: SMD Gate charge: 2.3nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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FDV304P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -25V; -0.46A; 0.35W; SOT23 Mounting: SMD Features of semiconductor devices: logic level Kind of package: reel; tape Case: SOT23 Power dissipation: 0.35W Drain-source voltage: -25V Drain current: -0.46A On-state resistance: 2Ω Type of transistor: P-MOSFET Polarisation: unipolar Gate charge: 1.5nC Kind of channel: enhanced Gate-source voltage: ±8V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 880 Stücke: Lieferzeit 7-14 Tag (e) |
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FDV305N | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.9A; 0.35W; SOT23 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.9A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 303mΩ Mounting: SMD Gate charge: 1.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 8940 Stücke: Lieferzeit 7-14 Tag (e) |
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FDWS9509L-F085 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -65A; 107W; DFN8 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -40V Drain current: -65A Power dissipation: 107W Case: DFN8 Gate-source voltage: ±16V On-state resistance: 13mΩ Mounting: SMD Gate charge: 67nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FDY1002PZ | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.83A; 0.625W; SOT563F Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.83A Power dissipation: 0.625W Case: SOT563F Gate-source voltage: ±8V On-state resistance: 0.85Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDY100PZ | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.35A; 0.625W; SOT523 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.35A Power dissipation: 0.625W Case: SOT523 Gate-source voltage: ±8V On-state resistance: 2.7Ω Mounting: SMD Gate charge: 1.4nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2229 Stücke: Lieferzeit 7-14 Tag (e) |
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FDY101PZ | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.15A; 0.625W; SOT523 Mounting: SMD Power dissipation: 0.625W Gate charge: 1.4nC Polarisation: unipolar Technology: PowerTrench® Drain current: -0.15A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape Case: SOT523 On-state resistance: 20Ω Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2793 Stücke: Lieferzeit 7-14 Tag (e) |
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| FDY300NZ | ONSEMI |
FDY300NZ SMD N channel transistors |
auf Bestellung 2970 Stücke: Lieferzeit 7-14 Tag (e) |
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FDY4000CZ | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Kind of package: reel; tape Case: SOT563F On-state resistance: 700/1200mΩ Gate-source voltage: ±12/±8V Mounting: SMD Power dissipation: 0.625W Polarisation: unipolar Drain current: 0.6/-0.35A Kind of channel: enhanced Drain-source voltage: 20/-20V Kind of transistor: complementary pair Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FFB2227A | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 30V; 0.5A Mounting: SMD Kind of package: reel; tape Kind of transistor: complementary pair Case: SC70-6; SC88; SOT363 Frequency: 250MHz Collector-emitter voltage: 30V Current gain: 30...100 Collector current: 0.5A Type of transistor: NPN / PNP Power dissipation: 0.3W Polarisation: bipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FFB5551 | ONSEMI |
FFB5551 NPN SMD transistors |
Produkt ist nicht verfügbar |
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FFPF20UP30DNTU | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 100A; TO220FP; 45ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 10A x2 Max. load current: 20A Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 100A Case: TO220FP Max. forward voltage: 1.3V Reverse recovery time: 45ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FFSH40120ADN-F155 | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; 37W; TO247-3 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A x2 Max. load current: 74A Power dissipation: 37W Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 135A Max. forward voltage: 2.4V Leakage current: 0.4mA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FFSP3065A | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; 40W; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 30A Max. load current: 75A Power dissipation: 40W Semiconductor structure: single diode Case: TO220-2 Kind of package: tube Heatsink thickness: max. 1.4mm Max. forward impulse current: 150A Max. forward voltage: 2.4V Leakage current: 0.6mA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FGA60N65SMD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 60A; 300W; TO3PN Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 300W Case: TO3PN Gate-emitter voltage: ±20V Pulsed collector current: 180A Mounting: THT Gate charge: 284nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FGA6560WDF | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 60A; 153W; TO3PN Kind of package: tube Mounting: THT Collector-emitter voltage: 650V Power dissipation: 153W Gate charge: 84nC Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 180A Type of transistor: IGBT Case: TO3PN Gate-emitter voltage: ±20V Collector current: 60A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FGAF40N60UFDTU | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 20A Power dissipation: 40W Case: TO3PF Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 150nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FGB7N60UNDF | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT Type of transistor: IGBT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 439 Stücke: Lieferzeit 7-14 Tag (e) |
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| FGD2736G3-F085V | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 360V; 24.3A; 150W; DPAK; ignition systems Application: ignition systems Collector-emitter voltage: 360V Gate-emitter voltage: ±10V Collector current: 24.3A Type of transistor: IGBT Power dissipation: 150W Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; logic level Gate charge: 18nC Mounting: SMD Case: DPAK Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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FGD3245G2-F085 | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 450V; 23A; 150W; DPAK; ignition systems Application: ignition systems Collector-emitter voltage: 450V Gate-emitter voltage: ±10V Collector current: 23A Type of transistor: IGBT Power dissipation: 150W Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; logic level Gate charge: 23nC Mounting: SMD Case: DPAK Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2484 Stücke: Lieferzeit 7-14 Tag (e) |
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| FGD5T120SH | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 5A; 28W; DPAK Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±25V Collector current: 5A Pulsed collector current: 12.5A Type of transistor: IGBT Power dissipation: 28W Kind of package: reel; tape Gate charge: 6.7nC Mounting: SMD Case: DPAK Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FGH40N60SFDTU | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 116W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 0.12µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FGH40N60SMD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 174W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 180nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 103 Stücke: Lieferzeit 7-14 Tag (e) |
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FGH40N60UFDTU | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 116W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 0.12µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 134 Stücke: Lieferzeit 7-14 Tag (e) |
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FGH40T120SMD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 277W Case: TO247-3 Gate-emitter voltage: ±25V Pulsed collector current: 160A Mounting: THT Gate charge: 0.37µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 11 Stücke: Lieferzeit 7-14 Tag (e) |
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| FGH40T120SMD-F155 | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 277W Case: TO247-3 Gate-emitter voltage: ±25V Pulsed collector current: 160A Mounting: THT Gate charge: 0.37µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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| FGH50N3 | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 300V; 75A; 463W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 300V Collector current: 75A Power dissipation: 463W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 228nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FGH50T65SQD-F155 | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3 Mounting: THT Case: TO247-3 Pulsed collector current: 200A Type of transistor: IGBT Power dissipation: 134W Gate-emitter voltage: ±20V Features of semiconductor devices: integrated anti-parallel diode Gate charge: 99nC Collector-emitter voltage: 650V Kind of package: tube Collector current: 50A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FGH60N60SMD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 60A; 300W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 60A Power dissipation: 300W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 180A Mounting: THT Gate charge: 284nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 122 Stücke: Lieferzeit 7-14 Tag (e) |
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| FGP3440G2-F085 | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 400V; 25A; 166W; TO220-3; ignition systems Application: ignition systems Collector-emitter voltage: 400V Gate-emitter voltage: ±10V Collector current: 25A Type of transistor: IGBT Power dissipation: 166W Kind of package: tube Features of semiconductor devices: ESD protected gate; logic level Mounting: THT Case: TO220-3 Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
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| FGY40T120SMD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 441W; TO247H03 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±25V Collector current: 40A Pulsed collector current: 160A Type of transistor: IGBT Power dissipation: 441W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.37µC Mounting: THT Case: TO247H03 Anzahl je Verpackung: 450 Stücke |
Produkt ist nicht verfügbar |
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FIN1001M5X | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: digital; differential,line driver,translator; LVDS; 3.6VDC Technology: LVDS Case: SOT23-5 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Type of integrated circuit: digital Supply voltage: 3.6V DC Kind of integrated circuit: differential; line driver; translator Number of channels: 1 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5931 Stücke: Lieferzeit 7-14 Tag (e) |
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FIN1002M5X | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: digital; line receiver,differential,translator; LVDS; SMD Kind of package: tube Operating temperature: -40...125°C Supply voltage: 3...3.6V DC Type of integrated circuit: digital Number of channels: 1 Technology: LVDS Kind of integrated circuit: differential; line receiver; translator Mounting: SMD Case: SOT23-5 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1879 Stücke: Lieferzeit 7-14 Tag (e) |
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FIN1019MTCX | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: digital; receiver,driver,translator; LVDS; 3÷3.6VDC; SMD; Ch: 2 Type of integrated circuit: digital Kind of integrated circuit: driver; receiver; translator Technology: LVDS Supply voltage: 3...3.6V DC Mounting: SMD Case: TSSOP14 Operating temperature: -40...85°C Number of channels: 2 Kind of package: reel; tape Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| FIN1022MTCX | ONSEMI |
FIN1022MTCX Decoders, multiplexers, switches |
Produkt ist nicht verfügbar |
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FIN1031MTCX | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: digital; differential,line driver,translator; LVDS; 3÷3.6VDC Type of integrated circuit: digital Kind of integrated circuit: differential; line driver; translator Technology: LVDS Supply voltage: 3...3.6V DC Mounting: SMD Case: TSSOP16 Operating temperature: -40...85°C Number of channels: 4 Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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FIN1032MTCX | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: digital; line receiver,differential,translator; LVDS; SMD Mounting: SMD Operating temperature: -40...85°C Supply voltage: 3...3.6V DC Type of integrated circuit: digital Number of channels: 4 Technology: LVDS Kind of integrated circuit: differential; line receiver; translator Case: TSSOP16 Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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FIN1047MTCX | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: digital; differential,line driver,translator; LVDS; 3÷3.6VDC Type of integrated circuit: digital Kind of integrated circuit: differential; line driver; translator Technology: LVDS Supply voltage: 3...3.6V DC Mounting: SMD Case: TSSOP16 Operating temperature: -40...85°C Number of channels: 4 Kind of package: reel; tape Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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FIN1048MTCX | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: digital; line receiver,differential,translator; LVDS; SMD Type of integrated circuit: digital Kind of integrated circuit: differential; line receiver; translator Technology: LVDS Supply voltage: 3...3.6V DC Mounting: SMD Case: TSSOP16 Operating temperature: -40...85°C Number of channels: 4 Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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FIN1048MX | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: digital; line receiver,differential,translator; LVDS; SMD Type of integrated circuit: digital Kind of integrated circuit: differential; line receiver; translator Technology: LVDS Supply voltage: 3...3.6V DC Mounting: SMD Case: SO16 Operating temperature: -40...85°C Number of channels: 4 Kind of package: reel; tape Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| FIN1101K8X | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: digital; repeater,logic level voltage translator; LVDS; SMD Type of integrated circuit: digital Mounting: SMD Case: US8 Supply voltage: 3...3.6V DC Operating temperature: -40...85°C Number of channels: 1 Technology: LVDS Kind of integrated circuit: logic level voltage translator; repeater Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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FIN1104MTC | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: digital; repeater,logic level voltage translator; LVDS; SMD Mounting: SMD Operating temperature: -40...85°C Type of integrated circuit: digital Number of channels: 4 Technology: LVDS Kind of integrated circuit: logic level voltage translator; repeater Case: TSSOP24 Supply voltage: 3...3.6V DC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FIN1104MTCX | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: digital; repeater,logic level voltage translator; LVDS; SMD Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Type of integrated circuit: digital Number of channels: 4 Technology: LVDS Kind of integrated circuit: logic level voltage translator; repeater Case: TSSOP24 Supply voltage: 3...3.6V DC Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| FIN1108MTD | ONSEMI |
FIN1108MTD Interfaces others - integrated circuits |
Produkt ist nicht verfügbar |
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| FIN1108MTDX | ONSEMI |
FIN1108MTDX Interfaces others - integrated circuits |
Produkt ist nicht verfügbar |
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FJB102TM | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 80W; D2PAK Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 8A Power dissipation: 80W Case: D2PAK Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FJB5555TM | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 400V; 5A; 1.6W; D2PAK Kind of package: reel; tape Mounting: SMD Case: D2PAK Collector-emitter voltage: 400V Current gain: 10...40 Collector current: 5A Type of transistor: NPN Power dissipation: 1.6W Polarisation: bipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FJD5304DTF | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 400V; 4A; 1.25W; DPAK Mounting: SMD Case: DPAK Kind of package: reel; tape Collector-emitter voltage: 400V Power dissipation: 1.25W Polarisation: bipolar Type of transistor: NPN Current gain: 8...40 Collector current: 4A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FJD5553TM | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 400V; 3A; 1.25W; DPAK Kind of package: reel; tape Collector-emitter voltage: 400V Power dissipation: 1.25W Polarisation: bipolar Type of transistor: NPN Current gain: 10...60 Case: DPAK Collector current: 3A Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FJD5555TM | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 400V; 5A; 1.34W; DPAK Kind of package: reel; tape Mounting: SMD Case: DPAK Collector-emitter voltage: 400V Current gain: 10...40 Collector current: 5A Type of transistor: NPN Power dissipation: 1.34W Polarisation: bipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FJI5603DTU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 800V; 3A; 100W; I2PAK Mounting: THT Case: I2PAK Kind of package: tube Type of transistor: NPN Current gain: 6...46 Frequency: 5MHz Collector current: 3A Collector-emitter voltage: 800V Power dissipation: 100W Polarisation: bipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 60 Stücke: Lieferzeit 7-14 Tag (e) |
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FJL6920TU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 800V; 20A; 200W; TO264 Case: TO264 Mounting: THT Kind of package: tube Power dissipation: 200W Type of transistor: NPN Collector-emitter voltage: 800V Collector current: 20A Polarisation: bipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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FJP13007H2TU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 400V; 8A; 80W; TO220AB Mounting: THT Power dissipation: 80W Polarisation: bipolar Kind of package: tube Case: TO220AB Collector-emitter voltage: 400V Current gain: 5...60 Collector current: 8A Type of transistor: NPN Anzahl je Verpackung: 1 Stücke |
auf Bestellung 129 Stücke: Lieferzeit 7-14 Tag (e) |
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FJP13009H2TU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 400V; 12A; 100W; TO220AB Mounting: THT Kind of package: tube Power dissipation: 100W Polarisation: bipolar Case: TO220AB Frequency: 4MHz Collector-emitter voltage: 400V Current gain: 15...28 Collector current: 12A Type of transistor: NPN Anzahl je Verpackung: 1 Stücke |
auf Bestellung 41 Stücke: Lieferzeit 7-14 Tag (e) |
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FJP13009TU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 400V; 12A; 100W; TO220AB Mounting: THT Kind of package: tube Power dissipation: 100W Polarisation: bipolar Case: TO220AB Frequency: 4MHz Collector-emitter voltage: 400V Current gain: 15...28 Collector current: 12A Type of transistor: NPN Anzahl je Verpackung: 1 Stücke |
auf Bestellung 56 Stücke: Lieferzeit 7-14 Tag (e) |
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| FJP1943RTU | ONSEMI |
FJP1943RTU PNP THT transistors |
Produkt ist nicht verfügbar |
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FJP3305H1TU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 400V; 4A; 75W; TO220AB Mounting: THT Kind of package: tube Polarisation: bipolar Power dissipation: 75W Case: TO220AB Frequency: 4MHz Collector-emitter voltage: 400V Current gain: 8...40 Collector current: 4A Type of transistor: NPN Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
| FDT86113LZ |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; 2.2W; SOT223
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT223
Drain-source voltage: 100V
Drain current: 3.3A
On-state resistance: 189mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; 2.2W; SOT223
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SOT223
Drain-source voltage: 100V
Drain current: 3.3A
On-state resistance: 189mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.2W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FDU3N40TU |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.25A; Idm: 8A; 30W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.25A
Pulsed drain current: 8A
Power dissipation: 30W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: THT
Gate charge: 6nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.25A; Idm: 8A; 30W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.25A
Pulsed drain current: 8A
Power dissipation: 30W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: THT
Gate charge: 6nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FDV301N |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.22A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.22A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 9Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.22A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.22A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 9Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6322 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 881+ | 0.081 EUR |
| 1044+ | 0.068 EUR |
| 1158+ | 0.062 EUR |
| 1163+ | 0.061 EUR |
| 1226+ | 0.058 EUR |
| 3000+ | 0.057 EUR |
| 12000+ | 0.056 EUR |
| FDV303N |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.68A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.68A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 2.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.68A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.68A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 2.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 168+ | 0.43 EUR |
| 228+ | 0.31 EUR |
| 407+ | 0.18 EUR |
| 544+ | 0.13 EUR |
| 794+ | 0.09 EUR |
| 834+ | 0.086 EUR |
| FDV304P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -0.46A; 0.35W; SOT23
Mounting: SMD
Features of semiconductor devices: logic level
Kind of package: reel; tape
Case: SOT23
Power dissipation: 0.35W
Drain-source voltage: -25V
Drain current: -0.46A
On-state resistance: 2Ω
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 1.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -0.46A; 0.35W; SOT23
Mounting: SMD
Features of semiconductor devices: logic level
Kind of package: reel; tape
Case: SOT23
Power dissipation: 0.35W
Drain-source voltage: -25V
Drain current: -0.46A
On-state resistance: 2Ω
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 1.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 880 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 139+ | 0.51 EUR |
| 171+ | 0.42 EUR |
| 210+ | 0.34 EUR |
| 256+ | 0.28 EUR |
| 317+ | 0.23 EUR |
| 556+ | 0.13 EUR |
| 589+ | 0.12 EUR |
| FDV305N |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.9A; 0.35W; SOT23
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.9A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 303mΩ
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.9A; 0.35W; SOT23
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.9A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 303mΩ
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8940 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 266+ | 0.27 EUR |
| 379+ | 0.19 EUR |
| 428+ | 0.17 EUR |
| 520+ | 0.14 EUR |
| 550+ | 0.13 EUR |
| FDWS9509L-F085 |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -65A; 107W; DFN8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -65A
Power dissipation: 107W
Case: DFN8
Gate-source voltage: ±16V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -65A; 107W; DFN8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -65A
Power dissipation: 107W
Case: DFN8
Gate-source voltage: ±16V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FDY1002PZ |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.83A; 0.625W; SOT563F
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.83A
Power dissipation: 0.625W
Case: SOT563F
Gate-source voltage: ±8V
On-state resistance: 0.85Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.83A; 0.625W; SOT563F
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.83A
Power dissipation: 0.625W
Case: SOT563F
Gate-source voltage: ±8V
On-state resistance: 0.85Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FDY100PZ |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.35A; 0.625W; SOT523
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.35A
Power dissipation: 0.625W
Case: SOT523
Gate-source voltage: ±8V
On-state resistance: 2.7Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.35A; 0.625W; SOT523
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.35A
Power dissipation: 0.625W
Case: SOT523
Gate-source voltage: ±8V
On-state resistance: 2.7Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2229 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 131+ | 0.55 EUR |
| 221+ | 0.32 EUR |
| 316+ | 0.23 EUR |
| 334+ | 0.21 EUR |
| FDY101PZ |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.15A; 0.625W; SOT523
Mounting: SMD
Power dissipation: 0.625W
Gate charge: 1.4nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -0.15A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: SOT523
On-state resistance: 20Ω
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.15A; 0.625W; SOT523
Mounting: SMD
Power dissipation: 0.625W
Gate charge: 1.4nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -0.15A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: SOT523
On-state resistance: 20Ω
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2793 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 223+ | 0.32 EUR |
| 249+ | 0.29 EUR |
| 323+ | 0.22 EUR |
| 342+ | 0.21 EUR |
| FDY300NZ |
|
Hersteller: ONSEMI
FDY300NZ SMD N channel transistors
FDY300NZ SMD N channel transistors
auf Bestellung 2970 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 141+ | 0.51 EUR |
| 202+ | 0.35 EUR |
| 214+ | 0.33 EUR |
| FDY4000CZ |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Kind of package: reel; tape
Case: SOT563F
On-state resistance: 700/1200mΩ
Gate-source voltage: ±12/±8V
Mounting: SMD
Power dissipation: 0.625W
Polarisation: unipolar
Drain current: 0.6/-0.35A
Kind of channel: enhanced
Drain-source voltage: 20/-20V
Kind of transistor: complementary pair
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Kind of package: reel; tape
Case: SOT563F
On-state resistance: 700/1200mΩ
Gate-source voltage: ±12/±8V
Mounting: SMD
Power dissipation: 0.625W
Polarisation: unipolar
Drain current: 0.6/-0.35A
Kind of channel: enhanced
Drain-source voltage: 20/-20V
Kind of transistor: complementary pair
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FFB2227A |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 30V; 0.5A
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: complementary pair
Case: SC70-6; SC88; SOT363
Frequency: 250MHz
Collector-emitter voltage: 30V
Current gain: 30...100
Collector current: 0.5A
Type of transistor: NPN / PNP
Power dissipation: 0.3W
Polarisation: bipolar
Anzahl je Verpackung: 1 Stücke
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 30V; 0.5A
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: complementary pair
Case: SC70-6; SC88; SOT363
Frequency: 250MHz
Collector-emitter voltage: 30V
Current gain: 30...100
Collector current: 0.5A
Type of transistor: NPN / PNP
Power dissipation: 0.3W
Polarisation: bipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FFPF20UP30DNTU |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 100A; TO220FP; 45ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220FP
Max. forward voltage: 1.3V
Reverse recovery time: 45ns
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 100A; TO220FP; 45ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Max. load current: 20A
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220FP
Max. forward voltage: 1.3V
Reverse recovery time: 45ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FFSH40120ADN-F155 |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; 37W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A x2
Max. load current: 74A
Power dissipation: 37W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 135A
Max. forward voltage: 2.4V
Leakage current: 0.4mA
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; 37W; TO247-3
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A x2
Max. load current: 74A
Power dissipation: 37W
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Max. forward impulse current: 135A
Max. forward voltage: 2.4V
Leakage current: 0.4mA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FFSP3065A |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; 40W; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Max. load current: 75A
Power dissipation: 40W
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Heatsink thickness: max. 1.4mm
Max. forward impulse current: 150A
Max. forward voltage: 2.4V
Leakage current: 0.6mA
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; 40W; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Max. load current: 75A
Power dissipation: 40W
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Heatsink thickness: max. 1.4mm
Max. forward impulse current: 150A
Max. forward voltage: 2.4V
Leakage current: 0.6mA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FGA60N65SMD |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 300W; TO3PN
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 300W
Case: TO3PN
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 284nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 300W; TO3PN
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 300W
Case: TO3PN
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 284nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FGA6560WDF |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 153W; TO3PN
Kind of package: tube
Mounting: THT
Collector-emitter voltage: 650V
Power dissipation: 153W
Gate charge: 84nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 180A
Type of transistor: IGBT
Case: TO3PN
Gate-emitter voltage: ±20V
Collector current: 60A
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 153W; TO3PN
Kind of package: tube
Mounting: THT
Collector-emitter voltage: 650V
Power dissipation: 153W
Gate charge: 84nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 180A
Type of transistor: IGBT
Case: TO3PN
Gate-emitter voltage: ±20V
Collector current: 60A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FGAF40N60UFDTU |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 40W
Case: TO3PF
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 40W
Case: TO3PF
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FGB7N60UNDF |
|
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 439 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 31+ | 2.37 EUR |
| 250+ | 2.06 EUR |
| FGD2736G3-F085V |
|
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 360V; 24.3A; 150W; DPAK; ignition systems
Application: ignition systems
Collector-emitter voltage: 360V
Gate-emitter voltage: ±10V
Collector current: 24.3A
Type of transistor: IGBT
Power dissipation: 150W
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; logic level
Gate charge: 18nC
Mounting: SMD
Case: DPAK
Anzahl je Verpackung: 2500 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 360V; 24.3A; 150W; DPAK; ignition systems
Application: ignition systems
Collector-emitter voltage: 360V
Gate-emitter voltage: ±10V
Collector current: 24.3A
Type of transistor: IGBT
Power dissipation: 150W
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; logic level
Gate charge: 18nC
Mounting: SMD
Case: DPAK
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| FGD3245G2-F085 |
|
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 23A; 150W; DPAK; ignition systems
Application: ignition systems
Collector-emitter voltage: 450V
Gate-emitter voltage: ±10V
Collector current: 23A
Type of transistor: IGBT
Power dissipation: 150W
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; logic level
Gate charge: 23nC
Mounting: SMD
Case: DPAK
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 23A; 150W; DPAK; ignition systems
Application: ignition systems
Collector-emitter voltage: 450V
Gate-emitter voltage: ±10V
Collector current: 23A
Type of transistor: IGBT
Power dissipation: 150W
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; logic level
Gate charge: 23nC
Mounting: SMD
Case: DPAK
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2484 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 24+ | 2.99 EUR |
| 38+ | 1.92 EUR |
| 40+ | 1.8 EUR |
| 500+ | 1.74 EUR |
| FGD5T120SH |
|
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 5A; 28W; DPAK
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±25V
Collector current: 5A
Pulsed collector current: 12.5A
Type of transistor: IGBT
Power dissipation: 28W
Kind of package: reel; tape
Gate charge: 6.7nC
Mounting: SMD
Case: DPAK
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 5A; 28W; DPAK
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±25V
Collector current: 5A
Pulsed collector current: 12.5A
Type of transistor: IGBT
Power dissipation: 28W
Kind of package: reel; tape
Gate charge: 6.7nC
Mounting: SMD
Case: DPAK
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FGH40N60SFDTU |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 116W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 116W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FGH40N60SMD |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 103 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 11+ | 6.95 EUR |
| 12+ | 6.15 EUR |
| 14+ | 5.29 EUR |
| 15+ | 4.99 EUR |
| FGH40N60UFDTU |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 116W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 116W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 134 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 12+ | 6.19 EUR |
| 13+ | 5.56 EUR |
| 17+ | 4.23 EUR |
| 18+ | 4 EUR |
| FGH40T120SMD |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 277W
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 277W
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 12.84 EUR |
| 9+ | 8.31 EUR |
| FGH40T120SMD-F155 |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 277W
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 277W
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 21.86 EUR |
| 5+ | 14.31 EUR |
| FGH50N3 |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 300V; 75A; 463W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 300V
Collector current: 75A
Power dissipation: 463W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 228nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 300V; 75A; 463W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 300V
Collector current: 75A
Power dissipation: 463W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 228nC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FGH50T65SQD-F155 |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Pulsed collector current: 200A
Type of transistor: IGBT
Power dissipation: 134W
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 99nC
Collector-emitter voltage: 650V
Kind of package: tube
Collector current: 50A
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Pulsed collector current: 200A
Type of transistor: IGBT
Power dissipation: 134W
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 99nC
Collector-emitter voltage: 650V
Kind of package: tube
Collector current: 50A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FGH60N60SMD |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 284nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 284nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 122 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 7.59 EUR |
| 12+ | 5.99 EUR |
| 30+ | 5.81 EUR |
| FGP3440G2-F085 |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 400V; 25A; 166W; TO220-3; ignition systems
Application: ignition systems
Collector-emitter voltage: 400V
Gate-emitter voltage: ±10V
Collector current: 25A
Type of transistor: IGBT
Power dissipation: 166W
Kind of package: tube
Features of semiconductor devices: ESD protected gate; logic level
Mounting: THT
Case: TO220-3
Anzahl je Verpackung: 10 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 400V; 25A; 166W; TO220-3; ignition systems
Application: ignition systems
Collector-emitter voltage: 400V
Gate-emitter voltage: ±10V
Collector current: 25A
Type of transistor: IGBT
Power dissipation: 166W
Kind of package: tube
Features of semiconductor devices: ESD protected gate; logic level
Mounting: THT
Case: TO220-3
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
| FGY40T120SMD |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 441W; TO247H03
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±25V
Collector current: 40A
Pulsed collector current: 160A
Type of transistor: IGBT
Power dissipation: 441W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.37µC
Mounting: THT
Case: TO247H03
Anzahl je Verpackung: 450 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 441W; TO247H03
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±25V
Collector current: 40A
Pulsed collector current: 160A
Type of transistor: IGBT
Power dissipation: 441W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.37µC
Mounting: THT
Case: TO247H03
Anzahl je Verpackung: 450 Stücke
Produkt ist nicht verfügbar
| FIN1001M5X |
|
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: digital; differential,line driver,translator; LVDS; 3.6VDC
Technology: LVDS
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Type of integrated circuit: digital
Supply voltage: 3.6V DC
Kind of integrated circuit: differential; line driver; translator
Number of channels: 1
Anzahl je Verpackung: 1 Stücke
Category: Interfaces others - integrated circuits
Description: IC: digital; differential,line driver,translator; LVDS; 3.6VDC
Technology: LVDS
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Type of integrated circuit: digital
Supply voltage: 3.6V DC
Kind of integrated circuit: differential; line driver; translator
Number of channels: 1
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5931 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 53+ | 1.37 EUR |
| 59+ | 1.22 EUR |
| 77+ | 0.93 EUR |
| 81+ | 0.89 EUR |
| FIN1002M5X |
|
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: digital; line receiver,differential,translator; LVDS; SMD
Kind of package: tube
Operating temperature: -40...125°C
Supply voltage: 3...3.6V DC
Type of integrated circuit: digital
Number of channels: 1
Technology: LVDS
Kind of integrated circuit: differential; line receiver; translator
Mounting: SMD
Case: SOT23-5
Anzahl je Verpackung: 1 Stücke
Category: Interfaces others - integrated circuits
Description: IC: digital; line receiver,differential,translator; LVDS; SMD
Kind of package: tube
Operating temperature: -40...125°C
Supply voltage: 3...3.6V DC
Type of integrated circuit: digital
Number of channels: 1
Technology: LVDS
Kind of integrated circuit: differential; line receiver; translator
Mounting: SMD
Case: SOT23-5
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1879 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 99+ | 0.73 EUR |
| 110+ | 0.65 EUR |
| 123+ | 0.58 EUR |
| 130+ | 0.55 EUR |
| 1000+ | 0.53 EUR |
| FIN1019MTCX |
|
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: digital; receiver,driver,translator; LVDS; 3÷3.6VDC; SMD; Ch: 2
Type of integrated circuit: digital
Kind of integrated circuit: driver; receiver; translator
Technology: LVDS
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Number of channels: 2
Kind of package: reel; tape
Anzahl je Verpackung: 2500 Stücke
Category: Interfaces others - integrated circuits
Description: IC: digital; receiver,driver,translator; LVDS; 3÷3.6VDC; SMD; Ch: 2
Type of integrated circuit: digital
Kind of integrated circuit: driver; receiver; translator
Technology: LVDS
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Number of channels: 2
Kind of package: reel; tape
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| FIN1022MTCX |
|
Hersteller: ONSEMI
FIN1022MTCX Decoders, multiplexers, switches
FIN1022MTCX Decoders, multiplexers, switches
Produkt ist nicht verfügbar
| FIN1031MTCX |
|
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: digital; differential,line driver,translator; LVDS; 3÷3.6VDC
Type of integrated circuit: digital
Kind of integrated circuit: differential; line driver; translator
Technology: LVDS
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: TSSOP16
Operating temperature: -40...85°C
Number of channels: 4
Anzahl je Verpackung: 2500 Stücke
Category: Interfaces others - integrated circuits
Description: IC: digital; differential,line driver,translator; LVDS; 3÷3.6VDC
Type of integrated circuit: digital
Kind of integrated circuit: differential; line driver; translator
Technology: LVDS
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: TSSOP16
Operating temperature: -40...85°C
Number of channels: 4
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| FIN1032MTCX |
|
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: digital; line receiver,differential,translator; LVDS; SMD
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3...3.6V DC
Type of integrated circuit: digital
Number of channels: 4
Technology: LVDS
Kind of integrated circuit: differential; line receiver; translator
Case: TSSOP16
Anzahl je Verpackung: 2500 Stücke
Category: Interfaces others - integrated circuits
Description: IC: digital; line receiver,differential,translator; LVDS; SMD
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3...3.6V DC
Type of integrated circuit: digital
Number of channels: 4
Technology: LVDS
Kind of integrated circuit: differential; line receiver; translator
Case: TSSOP16
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| FIN1047MTCX |
|
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: digital; differential,line driver,translator; LVDS; 3÷3.6VDC
Type of integrated circuit: digital
Kind of integrated circuit: differential; line driver; translator
Technology: LVDS
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: TSSOP16
Operating temperature: -40...85°C
Number of channels: 4
Kind of package: reel; tape
Anzahl je Verpackung: 2500 Stücke
Category: Interfaces others - integrated circuits
Description: IC: digital; differential,line driver,translator; LVDS; 3÷3.6VDC
Type of integrated circuit: digital
Kind of integrated circuit: differential; line driver; translator
Technology: LVDS
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: TSSOP16
Operating temperature: -40...85°C
Number of channels: 4
Kind of package: reel; tape
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| FIN1048MTCX |
|
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: digital; line receiver,differential,translator; LVDS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: differential; line receiver; translator
Technology: LVDS
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: TSSOP16
Operating temperature: -40...85°C
Number of channels: 4
Anzahl je Verpackung: 2500 Stücke
Category: Interfaces others - integrated circuits
Description: IC: digital; line receiver,differential,translator; LVDS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: differential; line receiver; translator
Technology: LVDS
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: TSSOP16
Operating temperature: -40...85°C
Number of channels: 4
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| FIN1048MX |
|
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: digital; line receiver,differential,translator; LVDS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: differential; line receiver; translator
Technology: LVDS
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Number of channels: 4
Kind of package: reel; tape
Anzahl je Verpackung: 2500 Stücke
Category: Interfaces others - integrated circuits
Description: IC: digital; line receiver,differential,translator; LVDS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: differential; line receiver; translator
Technology: LVDS
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Number of channels: 4
Kind of package: reel; tape
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| FIN1101K8X |
|
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: digital; repeater,logic level voltage translator; LVDS; SMD
Type of integrated circuit: digital
Mounting: SMD
Case: US8
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Number of channels: 1
Technology: LVDS
Kind of integrated circuit: logic level voltage translator; repeater
Anzahl je Verpackung: 3000 Stücke
Category: Interfaces others - integrated circuits
Description: IC: digital; repeater,logic level voltage translator; LVDS; SMD
Type of integrated circuit: digital
Mounting: SMD
Case: US8
Supply voltage: 3...3.6V DC
Operating temperature: -40...85°C
Number of channels: 1
Technology: LVDS
Kind of integrated circuit: logic level voltage translator; repeater
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| FIN1104MTC |
|
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: digital; repeater,logic level voltage translator; LVDS; SMD
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: digital
Number of channels: 4
Technology: LVDS
Kind of integrated circuit: logic level voltage translator; repeater
Case: TSSOP24
Supply voltage: 3...3.6V DC
Anzahl je Verpackung: 1 Stücke
Category: Interfaces others - integrated circuits
Description: IC: digital; repeater,logic level voltage translator; LVDS; SMD
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: digital
Number of channels: 4
Technology: LVDS
Kind of integrated circuit: logic level voltage translator; repeater
Case: TSSOP24
Supply voltage: 3...3.6V DC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FIN1104MTCX |
|
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: digital; repeater,logic level voltage translator; LVDS; SMD
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: 4
Technology: LVDS
Kind of integrated circuit: logic level voltage translator; repeater
Case: TSSOP24
Supply voltage: 3...3.6V DC
Anzahl je Verpackung: 2500 Stücke
Category: Interfaces others - integrated circuits
Description: IC: digital; repeater,logic level voltage translator; LVDS; SMD
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: 4
Technology: LVDS
Kind of integrated circuit: logic level voltage translator; repeater
Case: TSSOP24
Supply voltage: 3...3.6V DC
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| FIN1108MTD |
|
Hersteller: ONSEMI
FIN1108MTD Interfaces others - integrated circuits
FIN1108MTD Interfaces others - integrated circuits
Produkt ist nicht verfügbar
| FIN1108MTDX |
|
Hersteller: ONSEMI
FIN1108MTDX Interfaces others - integrated circuits
FIN1108MTDX Interfaces others - integrated circuits
Produkt ist nicht verfügbar
| FJB102TM |
|
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 80W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 80W
Case: D2PAK
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 80W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 80W
Case: D2PAK
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FJB5555TM |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 5A; 1.6W; D2PAK
Kind of package: reel; tape
Mounting: SMD
Case: D2PAK
Collector-emitter voltage: 400V
Current gain: 10...40
Collector current: 5A
Type of transistor: NPN
Power dissipation: 1.6W
Polarisation: bipolar
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 5A; 1.6W; D2PAK
Kind of package: reel; tape
Mounting: SMD
Case: D2PAK
Collector-emitter voltage: 400V
Current gain: 10...40
Collector current: 5A
Type of transistor: NPN
Power dissipation: 1.6W
Polarisation: bipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FJD5304DTF |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 1.25W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Collector-emitter voltage: 400V
Power dissipation: 1.25W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 8...40
Collector current: 4A
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 1.25W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Collector-emitter voltage: 400V
Power dissipation: 1.25W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 8...40
Collector current: 4A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FJD5553TM |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 3A; 1.25W; DPAK
Kind of package: reel; tape
Collector-emitter voltage: 400V
Power dissipation: 1.25W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 10...60
Case: DPAK
Collector current: 3A
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 3A; 1.25W; DPAK
Kind of package: reel; tape
Collector-emitter voltage: 400V
Power dissipation: 1.25W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 10...60
Case: DPAK
Collector current: 3A
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FJD5555TM |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 5A; 1.34W; DPAK
Kind of package: reel; tape
Mounting: SMD
Case: DPAK
Collector-emitter voltage: 400V
Current gain: 10...40
Collector current: 5A
Type of transistor: NPN
Power dissipation: 1.34W
Polarisation: bipolar
Anzahl je Verpackung: 1 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 5A; 1.34W; DPAK
Kind of package: reel; tape
Mounting: SMD
Case: DPAK
Collector-emitter voltage: 400V
Current gain: 10...40
Collector current: 5A
Type of transistor: NPN
Power dissipation: 1.34W
Polarisation: bipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FJI5603DTU |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 3A; 100W; I2PAK
Mounting: THT
Case: I2PAK
Kind of package: tube
Type of transistor: NPN
Current gain: 6...46
Frequency: 5MHz
Collector current: 3A
Collector-emitter voltage: 800V
Power dissipation: 100W
Polarisation: bipolar
Anzahl je Verpackung: 1 Stücke
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 3A; 100W; I2PAK
Mounting: THT
Case: I2PAK
Kind of package: tube
Type of transistor: NPN
Current gain: 6...46
Frequency: 5MHz
Collector current: 3A
Collector-emitter voltage: 800V
Power dissipation: 100W
Polarisation: bipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 60 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 33+ | 2.17 EUR |
| 36+ | 1.99 EUR |
| 41+ | 1.74 EUR |
| 50+ | 1.44 EUR |
| 53+ | 1.36 EUR |
| FJL6920TU |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 20A; 200W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Power dissipation: 200W
Type of transistor: NPN
Collector-emitter voltage: 800V
Collector current: 20A
Polarisation: bipolar
Anzahl je Verpackung: 1 Stücke
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 800V; 20A; 200W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Power dissipation: 200W
Type of transistor: NPN
Collector-emitter voltage: 800V
Collector current: 20A
Polarisation: bipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 14.3 EUR |
| 8+ | 8.94 EUR |
| FJP13007H2TU |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 80W; TO220AB
Mounting: THT
Power dissipation: 80W
Polarisation: bipolar
Kind of package: tube
Case: TO220AB
Collector-emitter voltage: 400V
Current gain: 5...60
Collector current: 8A
Type of transistor: NPN
Anzahl je Verpackung: 1 Stücke
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 80W; TO220AB
Mounting: THT
Power dissipation: 80W
Polarisation: bipolar
Kind of package: tube
Case: TO220AB
Collector-emitter voltage: 400V
Current gain: 5...60
Collector current: 8A
Type of transistor: NPN
Anzahl je Verpackung: 1 Stücke
auf Bestellung 129 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 32+ | 2.26 EUR |
| 42+ | 1.72 EUR |
| 48+ | 1.5 EUR |
| 51+ | 1.42 EUR |
| 54+ | 1.34 EUR |
| 250+ | 1.29 EUR |
| FJP13009H2TU |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 12A; 100W; TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 100W
Polarisation: bipolar
Case: TO220AB
Frequency: 4MHz
Collector-emitter voltage: 400V
Current gain: 15...28
Collector current: 12A
Type of transistor: NPN
Anzahl je Verpackung: 1 Stücke
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 12A; 100W; TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 100W
Polarisation: bipolar
Case: TO220AB
Frequency: 4MHz
Collector-emitter voltage: 400V
Current gain: 15...28
Collector current: 12A
Type of transistor: NPN
Anzahl je Verpackung: 1 Stücke
auf Bestellung 41 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 32+ | 2.25 EUR |
| 41+ | 1.74 EUR |
| 50+ | 1.43 EUR |
| 100+ | 1.42 EUR |
| FJP13009TU |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 12A; 100W; TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 100W
Polarisation: bipolar
Case: TO220AB
Frequency: 4MHz
Collector-emitter voltage: 400V
Current gain: 15...28
Collector current: 12A
Type of transistor: NPN
Anzahl je Verpackung: 1 Stücke
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 12A; 100W; TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 100W
Polarisation: bipolar
Case: TO220AB
Frequency: 4MHz
Collector-emitter voltage: 400V
Current gain: 15...28
Collector current: 12A
Type of transistor: NPN
Anzahl je Verpackung: 1 Stücke
auf Bestellung 56 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 56+ | 1.27 EUR |
| 100+ | 0.87 EUR |
| FJP3305H1TU |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 75W; TO220AB
Mounting: THT
Kind of package: tube
Polarisation: bipolar
Power dissipation: 75W
Case: TO220AB
Frequency: 4MHz
Collector-emitter voltage: 400V
Current gain: 8...40
Collector current: 4A
Type of transistor: NPN
Anzahl je Verpackung: 1 Stücke
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 4A; 75W; TO220AB
Mounting: THT
Kind of package: tube
Polarisation: bipolar
Power dissipation: 75W
Case: TO220AB
Frequency: 4MHz
Collector-emitter voltage: 400V
Current gain: 8...40
Collector current: 4A
Type of transistor: NPN
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar