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FGY40T120SMD onsemi
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Description: IGBT TRENCH FS 1200V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/475ns
Switching Energy: 2.7mJ (on), 1.1mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 370 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 882 W
auf Bestellung 371 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 18.6 EUR |
30+ | 15.07 EUR |
120+ | 14.18 EUR |
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Technische Details FGY40T120SMD onsemi
Description: IGBT TRENCH FS 1200V 80A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 65 ns, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A, Supplier Device Package: TO-247, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 40ns/475ns, Switching Energy: 2.7mJ (on), 1.1mJ (off), Test Condition: 600V, 40A, 10Ohm, 15V, Gate Charge: 370 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 882 W.
Weitere Produktangebote FGY40T120SMD nach Preis ab 12.94 EUR bis 18.74 EUR
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FGY40T120SMD | Hersteller : onsemi / Fairchild |
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auf Bestellung 404 Stücke: Lieferzeit 10-14 Tag (e) |
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FGY40T120SMD | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FGY40T120SMD | Hersteller : ONSEMI |
![]() Description: Transistor: IGBT; 1.2kV; 40A; 441W; TO247H03 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±25V Collector current: 40A Pulsed collector current: 160A Type of transistor: IGBT Power dissipation: 441W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.37µC Mounting: THT Case: TO247H03 Anzahl je Verpackung: 450 Stücke |
Produkt ist nicht verfügbar |
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FGY40T120SMD | Hersteller : ONSEMI |
![]() Description: Transistor: IGBT; 1.2kV; 40A; 441W; TO247H03 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±25V Collector current: 40A Pulsed collector current: 160A Type of transistor: IGBT Power dissipation: 441W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.37µC Mounting: THT Case: TO247H03 |
Produkt ist nicht verfügbar |