auf Bestellung 97 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 9.4 EUR |
| 25+ | 7.43 EUR |
| 100+ | 6.39 EUR |
| 450+ | 6.16 EUR |
| 2700+ | 4.95 EUR |
| 5400+ | 4.91 EUR |
Produktrezensionen
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Technische Details FGA60N65SMD onsemi / Fairchild
Description: IGBT FIELD STOP 650V 120A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 47 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A, Supplier Device Package: TO-3P, IGBT Type: Field Stop, Td (on/off) @ 25°C: 18ns/104ns, Switching Energy: 1.54mJ (on), 450µJ (off), Test Condition: 400V, 60A, 3Ohm, 15V, Gate Charge: 189 nC, Part Status: Active, Current - Collector (Ic) (Max): 120 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 180 A, Power - Max: 600 W.
Weitere Produktangebote FGA60N65SMD nach Preis ab 16.83 EUR bis 16.83 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| FGA60N65SMD | Hersteller : ON-Semicoductor |
 IGBT 650V 120A 600W FGA60N65SMD TFGA60N65smdAnzahl je Verpackung: 2 Stücke |
auf Bestellung 23 Stücke: Lieferzeit 7-14 Tag (e) |
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FGA60N65SMD Produktcode: 60090 |
Transistoren > Transistoren IGBT, Leistungsmodule |
Produkt ist nicht verfügbar
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FGA60N65SMD | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 650V 120A 600000mW 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |
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FGA60N65SMD | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 650V 120A 600W 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |
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FGA60N65SMD | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 60A; 300W; TO3PN Case: TO3PN Mounting: THT Kind of package: tube Collector-emitter voltage: 650V Collector current: 60A Features of semiconductor devices: integrated anti-parallel diode Gate-emitter voltage: ±20V Pulsed collector current: 180A Type of transistor: IGBT Power dissipation: 300W Gate charge: 284nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FGA60N65SMD | Hersteller : onsemi |
Description: IGBT FIELD STOP 650V 120A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 47 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A Supplier Device Package: TO-3P IGBT Type: Field Stop Td (on/off) @ 25°C: 18ns/104ns Switching Energy: 1.54mJ (on), 450µJ (off) Test Condition: 400V, 60A, 3Ohm, 15V Gate Charge: 189 nC Part Status: Active Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 180 A Power - Max: 600 W |
Produkt ist nicht verfügbar |
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FGA60N65SMD | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 60A; 300W; TO3PN Case: TO3PN Mounting: THT Kind of package: tube Collector-emitter voltage: 650V Collector current: 60A Features of semiconductor devices: integrated anti-parallel diode Gate-emitter voltage: ±20V Pulsed collector current: 180A Type of transistor: IGBT Power dissipation: 300W Gate charge: 284nC |
Produkt ist nicht verfügbar |