![FGH50T65SQD-F155 FGH50T65SQD-F155](https://www.mouser.com/images/mouserelectronics/lrg/TO_247_3_t.jpg)
auf Bestellung 272 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 7.18 EUR |
10+ | 6.6 EUR |
25+ | 5.72 EUR |
100+ | 4.88 EUR |
250+ | 4.73 EUR |
450+ | 4.21 EUR |
900+ | 3.85 EUR |
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Technische Details FGH50T65SQD-F155 onsemi / Fairchild
Description: IGBT TRENCH FS 650V 100A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 31 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 22ns/105ns, Switching Energy: 180µJ (on), 45µJ (off), Test Condition: 400V, 12.5A, 4.7Ohm, 15V, Gate Charge: 99 nC, Part Status: Active, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 268 W.
Weitere Produktangebote FGH50T65SQD-F155 nach Preis ab 4.9 EUR bis 7.2 EUR
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FGH50T65SQD-F155 | Hersteller : onsemi |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 31 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22ns/105ns Switching Energy: 180µJ (on), 45µJ (off) Test Condition: 400V, 12.5A, 4.7Ohm, 15V Gate Charge: 99 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 268 W |
auf Bestellung 186 Stücke: Lieferzeit 10-14 Tag (e) |
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FGH50T65SQD-F155 | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FGH50T65SQD-F155 | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FGH50T65SQD-F155 | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FGH50T65SQD-F155 | Hersteller : ONSEMI |
![]() Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3 Mounting: THT Case: TO247-3 Pulsed collector current: 200A Type of transistor: IGBT Power dissipation: 134W Gate-emitter voltage: ±20V Features of semiconductor devices: integrated anti-parallel diode Gate charge: 99nC Collector-emitter voltage: 650V Kind of package: tube Collector current: 50A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FGH50T65SQD-F155 | Hersteller : ONSEMI |
![]() Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3 Mounting: THT Case: TO247-3 Pulsed collector current: 200A Type of transistor: IGBT Power dissipation: 134W Gate-emitter voltage: ±20V Features of semiconductor devices: integrated anti-parallel diode Gate charge: 99nC Collector-emitter voltage: 650V Kind of package: tube Collector current: 50A |
Produkt ist nicht verfügbar |