auf Bestellung 1900 Stücke:
Lieferzeit 150-154 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 8.91 EUR |
10+ | 8.89 EUR |
25+ | 7.06 EUR |
100+ | 6.04 EUR |
450+ | 5.37 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FGH40N60SFDTU onsemi / Fairchild
Description: IGBT FIELD STOP 600V 80A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 45 ns, Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A, Supplier Device Package: TO-247-3, IGBT Type: Field Stop, Td (on/off) @ 25°C: 25ns/115ns, Switching Energy: 1.13mJ (on), 310µJ (off), Test Condition: 400V, 40A, 10Ohm, 15V, Gate Charge: 120 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 290 W.
Weitere Produktangebote FGH40N60SFDTU
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
FGH40N60SFDTU Produktcode: 49007 |
Hersteller : IR |
Transistoren > Transistoren IGBT, Leistungsmodule Gehäuse: TO-247 Vces: 600 Vce: 2,3 Ic 25: 80 Ic 100: 40 Pd 25: 290 td(on)/td(off) 100-150 Grad: 25/115 |
Produkt ist nicht verfügbar
|
||
FGH40N60SFDTU | Hersteller : ON Semiconductor | Trans IGBT Chip N-CH 600V 80A 290000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
||
FGH40N60SFDTU | Hersteller : ON Semiconductor | Trans IGBT Chip N-CH 600V 80A 290W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
||
FGH40N60SFDTU | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 116W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 0.12µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
FGH40N60SFDTU | Hersteller : onsemi |
Description: IGBT FIELD STOP 600V 80A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 45 ns Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 25ns/115ns Switching Energy: 1.13mJ (on), 310µJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 290 W |
Produkt ist nicht verfügbar |
||
FGH40N60SFDTU | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 40A; 116W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 116W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 0.12µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |