| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FPF2213 | ONSEMI |
 Category: Power switches - integrated circuitsDescription: IC: power switch; 250mA; Ch: 1; P-Channel; SMD; WLCSP6; reel,tape Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape On-state resistance: 50mΩ Output current: 0.25A Type of integrated circuit: power switch Number of channels: 1 Kind of output: P-Channel Active logical level: high Integrated circuit features: thermal protection; undervoltage protection Case: WLCSP6 Supply voltage: 1.8...5.5V DC Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
| FPF2215 | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; 250mA; Ch: 1; P-Channel; SMD; WLCSP6; reel,tape Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape On-state resistance: 50mΩ Output current: 0.25A Type of integrated circuit: power switch Number of channels: 1 Kind of output: P-Channel Active logical level: high Integrated circuit features: thermal protection; undervoltage protection Case: WLCSP6 Supply voltage: 1.8...5.5V DC Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
| FPF2223 | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; Ch: 1; SMD; WDFN6; reel,tape; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape On-state resistance: 0.23Ω Type of integrated circuit: power switch Number of channels: 1 Active logical level: high Integrated circuit features: ESD-protected Case: WDFN6 Supply voltage: 1.8...5.5V DC Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
| FPF2225 | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; Ch: 1; SMD; WDFN6; reel,tape; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape On-state resistance: 0.23Ω Type of integrated circuit: power switch Number of channels: 1 Active logical level: high Integrated circuit features: ESD-protected Case: WDFN6 Supply voltage: 1.8...5.5V DC Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
| FPF2281BUCX-F130 | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; 4.5A; Ch: 1; SMD; WLCSP12; reel,tape; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape On-state resistance: 30mΩ Output current: 4.5A Type of integrated circuit: power switch Number of channels: 1 Active logical level: low Integrated circuit features: thermal protection Case: WLCSP12 Supply voltage: 2.5...25V DC Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
| FPF2283CUCX | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; Ch: 1; SMD; WLCSP20; reel,tape; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape On-state resistance: 7.5mΩ Type of integrated circuit: power switch Number of channels: 1 Active logical level: low Integrated circuit features: thermal protection Case: WLCSP20 Supply voltage: 2.8...28V DC Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
| FPF2286UCX | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; 4A; Ch: 1; SMD; WLCSP6; reel,tape; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape On-state resistance: 25mΩ Output current: 4A Type of integrated circuit: power switch Number of channels: 1 Active logical level: high; low Integrated circuit features: thermal protection Case: WLCSP6 Supply voltage: 2.8...23V DC Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
| FPF2290BUCX-F130 | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; 4.5A; Ch: 1; SMD; WLCSP12; reel,tape; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape On-state resistance: 33mΩ Output current: 4.5A Type of integrated circuit: power switch Number of channels: 1 Active logical level: high; low Integrated circuit features: thermal protection Case: WLCSP12 Supply voltage: 2.5...23V DC Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
| FPF2411BUCX-F130 | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; Ch: 1; SMD; WLCSP12; reel,tape; -40÷85°C Case: WLCSP12 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape On-state resistance: 12mΩ Type of integrated circuit: power switch Number of channels: 1 Active logical level: low Supply voltage: 2.3...5.5V DC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
| FPF2495CUCX | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; 2.2A; Ch: 1; SMD; WLCSP9; reel,tape; -40÷85°C Case: WLCSP9 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape On-state resistance: 0.1Ω Output current: 2.2A Type of integrated circuit: power switch Number of channels: 1 Active logical level: high Integrated circuit features: thermal protection; undervoltage protection Supply voltage: 2.5...5.5V DC Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
| FPF2495UCX | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; SMD; reel,tape Type of integrated circuit: power switch Mounting: SMD Kind of package: reel; tape Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
| FPF2496UCX | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; 2.5A; SMD; WLCSP9; reel,tape; -40÷85°C Case: WLCSP9 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape On-state resistance: 0.1Ω Output current: 2.5A Type of integrated circuit: power switch Supply voltage: 3.5...5.5V DC Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
| FPF2498BUCX | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; Ch: 1; SMD; WLCSP6; reel,tape; -40÷85°C Case: WLCSP6 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape On-state resistance: 80mΩ Type of integrated circuit: power switch Number of channels: 1 Active logical level: low Integrated circuit features: thermal protection; undervoltage protection Supply voltage: 3.5...12V DC Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
| FPF2595UCX | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; Ch: 1; SMD; WLCSP12; reel,tape; -40÷85°C Mounting: SMD Case: WLCSP12 Kind of package: reel; tape Operating temperature: -40...85°C Supply voltage: 2.5...5.5V DC Active logical level: low Integrated circuit features: thermal protection; undervoltage protection On-state resistance: 40mΩ Type of integrated circuit: power switch Number of channels: 1 Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
| FPF2700MPX | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; Ch: 1; SMD; WDFN8; reel,tape; -40÷125°C Mounting: SMD Operating temperature: -40...125°C On-state resistance: 88mΩ Type of integrated circuit: power switch Number of channels: 1 Active logical level: low Integrated circuit features: ESD-protected; thermal protection Kind of package: reel; tape Case: WDFN8 Supply voltage: 2.8...36V DC Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
| FPF2701MPX | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; Ch: 1; SMD; WDFN8; reel,tape; -40÷125°C Mounting: SMD Operating temperature: -40...125°C On-state resistance: 88mΩ Type of integrated circuit: power switch Number of channels: 1 Active logical level: low Integrated circuit features: ESD-protected; thermal protection Kind of package: reel; tape Case: WDFN8 Supply voltage: 2.8...36V DC Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
 |
FPF2701MX | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; Ch: 1; SMD; SO8; reel,tape; -40÷125°C Mounting: SMD Operating temperature: -40...125°C On-state resistance: 88mΩ Type of integrated circuit: power switch Number of channels: 1 Active logical level: low Integrated circuit features: ESD-protected; thermal protection Kind of package: reel; tape Case: SO8 Supply voltage: 2.8...36V DC Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
| FPF2702MPX | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; Ch: 1; SMD; WDFN8; reel,tape; -40÷125°C Mounting: SMD Operating temperature: -40...125°C On-state resistance: 88mΩ Type of integrated circuit: power switch Number of channels: 1 Active logical level: low Integrated circuit features: ESD-protected; thermal protection Kind of package: reel; tape Case: WDFN8 Supply voltage: 2.8...36V DC Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
|
|
FPF2702MX | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 0.4÷2A; Ch: 1; N-Channel; SMD; SO8 Mounting: SMD On-state resistance: 0.14Ω Output current: 0.4...2A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Kind of package: reel; tape Kind of integrated circuit: low-side Case: SO8 Supply voltage: 2.8...36V DC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
| FPF2895CUCX | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; Ch: 1; SMD; WLCSP20; reel,tape; -40÷85°C Type of integrated circuit: power switch Number of channels: 1 Case: WLCSP20 Mounting: SMD Operating temperature: -40...85°C On-state resistance: 27mΩ Supply voltage: 4...22V DC Kind of package: reel; tape Integrated circuit features: ESD-protected; thermal protection Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
| FPF2895UCX | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; SMD; reel,tape Type of integrated circuit: power switch Mounting: SMD Kind of package: reel; tape Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
| FPF2895VUCX | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; Ch: 1; SMD; WLCSP20; reel,tape; -40÷105°C Type of integrated circuit: power switch Number of channels: 1 Case: WLCSP20 Mounting: SMD Operating temperature: -40...105°C On-state resistance: 27mΩ Supply voltage: 4...22V DC Kind of package: reel; tape Integrated circuit features: ESD-protected; thermal protection Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
| FPF3040UCX | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; 2A; Ch: 4; SMD; WLCSP16; reel,tape Supply voltage: 4...10.5V DC On-state resistance: 95mΩ Output current: 2A Type of integrated circuit: power switch Number of channels: 4 Kind of package: reel; tape Mounting: SMD Case: WLCSP16 Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
| FPF3042UCX | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; 2.25A; Ch: 4; SMD; WLCSP16; reel,tape; -40÷150°C Operating temperature: -40...150°C Supply voltage: 4...12.4V DC On-state resistance: 95mΩ Output current: 2.25A Type of integrated circuit: power switch Number of channels: 4 Active logical level: high Integrated circuit features: ESD-protected; thermal protection; undervoltage protection Kind of package: reel; tape Mounting: SMD Case: WLCSP16 Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
| FPF3380UCX | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; 5A; Ch: 1; SMD; WLCSP12; reel,tape; -40÷85°C Type of integrated circuit: power switch Supply voltage: 2.8...23V DC Mounting: SMD Case: WLCSP12 Integrated circuit features: ESD-protected Kind of package: reel; tape Operating temperature: -40...85°C On-state resistance: 15mΩ Output current: 5A Number of channels: 1 Active logical level: low Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
 |
FQA13N50C-F109 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 8.5A; Idm: 54A; 218W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8.5A Pulsed drain current: 54A Power dissipation: 218W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 0.48Ω Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
FQA13N80-F109 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 50.4A; 300W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Pulsed drain current: 50.4A Power dissipation: 300W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 0.75Ω Mounting: THT Gate charge: 88nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
|
|
FQA140N10 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 99A; Idm: 560A; 375W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 99A Pulsed drain current: 560A Power dissipation: 375W Case: TO3PN Gate-source voltage: ±25V On-state resistance: 10mΩ Mounting: THT Gate charge: 285nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
 |
FQA24N60 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 14.9A; 310W; TO3PN Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 14.9A Power dissipation: 310W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 0.24Ω Mounting: THT Gate charge: 145nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
FQA40N25 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 25A; Idm: 160A; 280W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 25A Pulsed drain current: 160A Power dissipation: 280W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 58 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
|
|
FQA70N10 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 49.5A; 214W; TO3PN Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 49.5A Power dissipation: 214W Case: TO3PN Gate-source voltage: ±25V On-state resistance: 23mΩ Mounting: THT Gate charge: 11nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 102 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
|
|
FQA8N100C | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1000V; 5A; 225W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 5A Power dissipation: 225W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 1.45Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
FQA8N90C-F109 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 5.1A; Idm: 32A; 240W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 240W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 1.9Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
| FQA90N15-F109 | ONSEMI |
FQA90N15-F109 THT N channel transistors |
Produkt ist nicht verfügbar |
||||||||||||||
 |
FQAF16N50 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 7.15A; 110W; TO3PF Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 500V Drain current: 7.15A Power dissipation: 110W Case: TO3PF Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Gate charge: 75nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
| FQB11P06TM | ONSEMI |
FQB11P06TM SMD P channel transistors |
Produkt ist nicht verfügbar |
||||||||||||||
 |
FQB12P20TM | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -7.27A; 120W; D2PAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -200V Drain current: -7.27A Power dissipation: 120W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 470mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
 |
FQB19N20CTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; Idm: 76A; 139W; D2PAK Case: D2PAK Mounting: SMD Kind of package: reel; tape Pulsed drain current: 76A Drain-source voltage: 200V Drain current: 12.1A On-state resistance: 0.17Ω Type of transistor: N-MOSFET Power dissipation: 139W Polarisation: unipolar Gate charge: 53nC Technology: QFET® Kind of channel: enhanced Gate-source voltage: ±30V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
FQB19N20LTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 13.3A; Idm: 84A; 140W; D2PAK Case: D2PAK Mounting: SMD Kind of package: reel; tape Pulsed drain current: 84A Drain-source voltage: 200V Drain current: 13.3A On-state resistance: 0.15Ω Type of transistor: N-MOSFET Power dissipation: 140W Polarisation: unipolar Gate charge: 35nC Technology: QFET® Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 41 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
|
|
FQB19N20TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 12.3A; Idm: 78A; 140W; D2PAK Case: D2PAK Mounting: SMD Kind of package: reel; tape Pulsed drain current: 78A Drain-source voltage: 200V Drain current: 12.3A On-state resistance: 0.15Ω Type of transistor: N-MOSFET Power dissipation: 140W Polarisation: unipolar Gate charge: 40nC Technology: QFET® Kind of channel: enhanced Gate-source voltage: ±30V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
FQB22P10TM | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -15.6A; 125W; D2PAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -15.6A Power dissipation: 125W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
FQB27P06TM | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -19.1A; 120W; D2PAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -19.1A Power dissipation: 120W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 70mΩ Mounting: SMD Gate charge: 43nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
FQB33N10LTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 23A; Idm: 132A; 127W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 23A Pulsed drain current: 132A Power dissipation: 127W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
FQB33N10TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 23A; 127W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 23A Power dissipation: 127W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 52mΩ Mounting: SMD Gate charge: 51nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
FQB34N20LTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 20A; 180W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 20A Power dissipation: 180W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
FQB34P10TM | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -23.5A; 155W; D2PAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -23.5A Power dissipation: 155W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 60mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 664 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
| FQB44N10TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 30.8A; 146W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 30.8A Power dissipation: 146W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 39mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
|
|
FQB47P06TM-AM002 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; D2PAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -33.2A Power dissipation: 160W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 26mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
| FQB4N80TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; 130W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.47A Power dissipation: 130W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 3.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
|
|
FQB50N06TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 35.4A; Idm: 200A; 120W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 35.4A Pulsed drain current: 200A Power dissipation: 120W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 22mΩ Mounting: SMD Gate charge: 41nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
FQB55N10TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 38.9A; 155W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 38.9A Power dissipation: 155W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 26mΩ Mounting: SMD Gate charge: 98nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 800 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
|
|
FQB5N50CTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; 73W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.9A Power dissipation: 73W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
FQB5N90TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 3.42A; 158W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 900V Drain current: 3.42A Power dissipation: 158W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 2.3Ω Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 777 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
|
|
FQB7P20TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; -4.6A; Idm: -29.2A; 90W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: -4.6A Pulsed drain current: -29.2A Power dissipation: 90W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.69Ω Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
FQB8N60CTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 30A; 147W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.6A Pulsed drain current: 30A Power dissipation: 147W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
FQB8N90CTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 3.8A; Idm: 25A; 171W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 900V Drain current: 3.8A Pulsed drain current: 25A Power dissipation: 171W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 1.9Ω Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
FQB8P10TM | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -5.7A; Idm: -32A; 65W; D2PAK Type of transistor: P-MOSFET Power dissipation: 65W Polarisation: unipolar Kind of package: reel; tape Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: -32A Mounting: SMD Case: D2PAK Drain-source voltage: -100V Drain current: -5.7A On-state resistance: 530mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
 |
FQD10N20CTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 50W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 5A Power dissipation: 50W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
FQD11P06TM | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -5.95A; 38W; DPAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -5.95A Power dissipation: 38W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.185Ω Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1487 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
|
|
FQD12N20LTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; 55W; DPAK Mounting: SMD Drain-source voltage: 200V Drain current: 5.7A On-state resistance: 0.32Ω Type of transistor: N-MOSFET Power dissipation: 55W Polarisation: unipolar Kind of package: reel; tape Gate charge: 21nC Technology: QFET® Kind of channel: enhanced Gate-source voltage: ±20V Case: DPAK Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2236 Stücke: Lieferzeit 7-14 Tag (e) |
|
| FPF2213 |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; 250mA; Ch: 1; P-Channel; SMD; WLCSP6; reel,tape
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
On-state resistance: 50mΩ
Output current: 0.25A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Integrated circuit features: thermal protection; undervoltage protection
Case: WLCSP6
Supply voltage: 1.8...5.5V DC
Anzahl je Verpackung: 3000 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; 250mA; Ch: 1; P-Channel; SMD; WLCSP6; reel,tape
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
On-state resistance: 50mΩ
Output current: 0.25A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Integrated circuit features: thermal protection; undervoltage protection
Case: WLCSP6
Supply voltage: 1.8...5.5V DC
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| FPF2215 |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; 250mA; Ch: 1; P-Channel; SMD; WLCSP6; reel,tape
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
On-state resistance: 50mΩ
Output current: 0.25A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Integrated circuit features: thermal protection; undervoltage protection
Case: WLCSP6
Supply voltage: 1.8...5.5V DC
Anzahl je Verpackung: 3000 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; 250mA; Ch: 1; P-Channel; SMD; WLCSP6; reel,tape
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
On-state resistance: 50mΩ
Output current: 0.25A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Active logical level: high
Integrated circuit features: thermal protection; undervoltage protection
Case: WLCSP6
Supply voltage: 1.8...5.5V DC
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| FPF2223 |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WDFN6; reel,tape; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 0.23Ω
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: high
Integrated circuit features: ESD-protected
Case: WDFN6
Supply voltage: 1.8...5.5V DC
Anzahl je Verpackung: 3000 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WDFN6; reel,tape; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 0.23Ω
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: high
Integrated circuit features: ESD-protected
Case: WDFN6
Supply voltage: 1.8...5.5V DC
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| FPF2225 |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WDFN6; reel,tape; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 0.23Ω
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: high
Integrated circuit features: ESD-protected
Case: WDFN6
Supply voltage: 1.8...5.5V DC
Anzahl je Verpackung: 3000 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WDFN6; reel,tape; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 0.23Ω
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: high
Integrated circuit features: ESD-protected
Case: WDFN6
Supply voltage: 1.8...5.5V DC
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| FPF2281BUCX-F130 |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; 4.5A; Ch: 1; SMD; WLCSP12; reel,tape; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 30mΩ
Output current: 4.5A
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: low
Integrated circuit features: thermal protection
Case: WLCSP12
Supply voltage: 2.5...25V DC
Anzahl je Verpackung: 3000 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; 4.5A; Ch: 1; SMD; WLCSP12; reel,tape; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 30mΩ
Output current: 4.5A
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: low
Integrated circuit features: thermal protection
Case: WLCSP12
Supply voltage: 2.5...25V DC
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| FPF2283CUCX |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WLCSP20; reel,tape; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 7.5mΩ
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: low
Integrated circuit features: thermal protection
Case: WLCSP20
Supply voltage: 2.8...28V DC
Anzahl je Verpackung: 3000 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WLCSP20; reel,tape; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 7.5mΩ
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: low
Integrated circuit features: thermal protection
Case: WLCSP20
Supply voltage: 2.8...28V DC
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| FPF2286UCX |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; 4A; Ch: 1; SMD; WLCSP6; reel,tape; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 25mΩ
Output current: 4A
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: high; low
Integrated circuit features: thermal protection
Case: WLCSP6
Supply voltage: 2.8...23V DC
Anzahl je Verpackung: 3000 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; 4A; Ch: 1; SMD; WLCSP6; reel,tape; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 25mΩ
Output current: 4A
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: high; low
Integrated circuit features: thermal protection
Case: WLCSP6
Supply voltage: 2.8...23V DC
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| FPF2290BUCX-F130 |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; 4.5A; Ch: 1; SMD; WLCSP12; reel,tape; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 33mΩ
Output current: 4.5A
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: high; low
Integrated circuit features: thermal protection
Case: WLCSP12
Supply voltage: 2.5...23V DC
Anzahl je Verpackung: 3000 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; 4.5A; Ch: 1; SMD; WLCSP12; reel,tape; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 33mΩ
Output current: 4.5A
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: high; low
Integrated circuit features: thermal protection
Case: WLCSP12
Supply voltage: 2.5...23V DC
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| FPF2411BUCX-F130 |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WLCSP12; reel,tape; -40÷85°C
Case: WLCSP12
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 12mΩ
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: low
Supply voltage: 2.3...5.5V DC
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WLCSP12; reel,tape; -40÷85°C
Case: WLCSP12
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 12mΩ
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: low
Supply voltage: 2.3...5.5V DC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FPF2495CUCX |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; 2.2A; Ch: 1; SMD; WLCSP9; reel,tape; -40÷85°C
Case: WLCSP9
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 0.1Ω
Output current: 2.2A
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: high
Integrated circuit features: thermal protection; undervoltage protection
Supply voltage: 2.5...5.5V DC
Anzahl je Verpackung: 3000 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; 2.2A; Ch: 1; SMD; WLCSP9; reel,tape; -40÷85°C
Case: WLCSP9
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 0.1Ω
Output current: 2.2A
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: high
Integrated circuit features: thermal protection; undervoltage protection
Supply voltage: 2.5...5.5V DC
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| FPF2495UCX |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; SMD; reel,tape
Type of integrated circuit: power switch
Mounting: SMD
Kind of package: reel; tape
Anzahl je Verpackung: 3000 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; SMD; reel,tape
Type of integrated circuit: power switch
Mounting: SMD
Kind of package: reel; tape
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| FPF2496UCX |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; 2.5A; SMD; WLCSP9; reel,tape; -40÷85°C
Case: WLCSP9
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 0.1Ω
Output current: 2.5A
Type of integrated circuit: power switch
Supply voltage: 3.5...5.5V DC
Anzahl je Verpackung: 3000 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; 2.5A; SMD; WLCSP9; reel,tape; -40÷85°C
Case: WLCSP9
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 0.1Ω
Output current: 2.5A
Type of integrated circuit: power switch
Supply voltage: 3.5...5.5V DC
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| FPF2498BUCX |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WLCSP6; reel,tape; -40÷85°C
Case: WLCSP6
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 80mΩ
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: low
Integrated circuit features: thermal protection; undervoltage protection
Supply voltage: 3.5...12V DC
Anzahl je Verpackung: 3000 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WLCSP6; reel,tape; -40÷85°C
Case: WLCSP6
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
On-state resistance: 80mΩ
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: low
Integrated circuit features: thermal protection; undervoltage protection
Supply voltage: 3.5...12V DC
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| FPF2595UCX |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WLCSP12; reel,tape; -40÷85°C
Mounting: SMD
Case: WLCSP12
Kind of package: reel; tape
Operating temperature: -40...85°C
Supply voltage: 2.5...5.5V DC
Active logical level: low
Integrated circuit features: thermal protection; undervoltage protection
On-state resistance: 40mΩ
Type of integrated circuit: power switch
Number of channels: 1
Anzahl je Verpackung: 3000 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WLCSP12; reel,tape; -40÷85°C
Mounting: SMD
Case: WLCSP12
Kind of package: reel; tape
Operating temperature: -40...85°C
Supply voltage: 2.5...5.5V DC
Active logical level: low
Integrated circuit features: thermal protection; undervoltage protection
On-state resistance: 40mΩ
Type of integrated circuit: power switch
Number of channels: 1
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| FPF2700MPX |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WDFN8; reel,tape; -40÷125°C
Mounting: SMD
Operating temperature: -40...125°C
On-state resistance: 88mΩ
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: low
Integrated circuit features: ESD-protected; thermal protection
Kind of package: reel; tape
Case: WDFN8
Supply voltage: 2.8...36V DC
Anzahl je Verpackung: 3000 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WDFN8; reel,tape; -40÷125°C
Mounting: SMD
Operating temperature: -40...125°C
On-state resistance: 88mΩ
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: low
Integrated circuit features: ESD-protected; thermal protection
Kind of package: reel; tape
Case: WDFN8
Supply voltage: 2.8...36V DC
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| FPF2701MPX |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WDFN8; reel,tape; -40÷125°C
Mounting: SMD
Operating temperature: -40...125°C
On-state resistance: 88mΩ
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: low
Integrated circuit features: ESD-protected; thermal protection
Kind of package: reel; tape
Case: WDFN8
Supply voltage: 2.8...36V DC
Anzahl je Verpackung: 3000 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WDFN8; reel,tape; -40÷125°C
Mounting: SMD
Operating temperature: -40...125°C
On-state resistance: 88mΩ
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: low
Integrated circuit features: ESD-protected; thermal protection
Kind of package: reel; tape
Case: WDFN8
Supply voltage: 2.8...36V DC
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| FPF2701MX |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; SO8; reel,tape; -40÷125°C
Mounting: SMD
Operating temperature: -40...125°C
On-state resistance: 88mΩ
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: low
Integrated circuit features: ESD-protected; thermal protection
Kind of package: reel; tape
Case: SO8
Supply voltage: 2.8...36V DC
Anzahl je Verpackung: 2500 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; SO8; reel,tape; -40÷125°C
Mounting: SMD
Operating temperature: -40...125°C
On-state resistance: 88mΩ
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: low
Integrated circuit features: ESD-protected; thermal protection
Kind of package: reel; tape
Case: SO8
Supply voltage: 2.8...36V DC
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| FPF2702MPX |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WDFN8; reel,tape; -40÷125°C
Mounting: SMD
Operating temperature: -40...125°C
On-state resistance: 88mΩ
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: low
Integrated circuit features: ESD-protected; thermal protection
Kind of package: reel; tape
Case: WDFN8
Supply voltage: 2.8...36V DC
Anzahl je Verpackung: 3000 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WDFN8; reel,tape; -40÷125°C
Mounting: SMD
Operating temperature: -40...125°C
On-state resistance: 88mΩ
Type of integrated circuit: power switch
Number of channels: 1
Active logical level: low
Integrated circuit features: ESD-protected; thermal protection
Kind of package: reel; tape
Case: WDFN8
Supply voltage: 2.8...36V DC
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| FPF2702MX |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.4÷2A; Ch: 1; N-Channel; SMD; SO8
Mounting: SMD
On-state resistance: 0.14Ω
Output current: 0.4...2A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Kind of package: reel; tape
Kind of integrated circuit: low-side
Case: SO8
Supply voltage: 2.8...36V DC
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.4÷2A; Ch: 1; N-Channel; SMD; SO8
Mounting: SMD
On-state resistance: 0.14Ω
Output current: 0.4...2A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Kind of package: reel; tape
Kind of integrated circuit: low-side
Case: SO8
Supply voltage: 2.8...36V DC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FPF2895CUCX |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WLCSP20; reel,tape; -40÷85°C
Type of integrated circuit: power switch
Number of channels: 1
Case: WLCSP20
Mounting: SMD
Operating temperature: -40...85°C
On-state resistance: 27mΩ
Supply voltage: 4...22V DC
Kind of package: reel; tape
Integrated circuit features: ESD-protected; thermal protection
Anzahl je Verpackung: 3000 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WLCSP20; reel,tape; -40÷85°C
Type of integrated circuit: power switch
Number of channels: 1
Case: WLCSP20
Mounting: SMD
Operating temperature: -40...85°C
On-state resistance: 27mΩ
Supply voltage: 4...22V DC
Kind of package: reel; tape
Integrated circuit features: ESD-protected; thermal protection
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| FPF2895UCX |
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; SMD; reel,tape
Type of integrated circuit: power switch
Mounting: SMD
Kind of package: reel; tape
Anzahl je Verpackung: 3000 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; SMD; reel,tape
Type of integrated circuit: power switch
Mounting: SMD
Kind of package: reel; tape
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| FPF2895VUCX |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WLCSP20; reel,tape; -40÷105°C
Type of integrated circuit: power switch
Number of channels: 1
Case: WLCSP20
Mounting: SMD
Operating temperature: -40...105°C
On-state resistance: 27mΩ
Supply voltage: 4...22V DC
Kind of package: reel; tape
Integrated circuit features: ESD-protected; thermal protection
Anzahl je Verpackung: 3000 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WLCSP20; reel,tape; -40÷105°C
Type of integrated circuit: power switch
Number of channels: 1
Case: WLCSP20
Mounting: SMD
Operating temperature: -40...105°C
On-state resistance: 27mΩ
Supply voltage: 4...22V DC
Kind of package: reel; tape
Integrated circuit features: ESD-protected; thermal protection
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| FPF3040UCX |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; 2A; Ch: 4; SMD; WLCSP16; reel,tape
Supply voltage: 4...10.5V DC
On-state resistance: 95mΩ
Output current: 2A
Type of integrated circuit: power switch
Number of channels: 4
Kind of package: reel; tape
Mounting: SMD
Case: WLCSP16
Anzahl je Verpackung: 3000 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; 2A; Ch: 4; SMD; WLCSP16; reel,tape
Supply voltage: 4...10.5V DC
On-state resistance: 95mΩ
Output current: 2A
Type of integrated circuit: power switch
Number of channels: 4
Kind of package: reel; tape
Mounting: SMD
Case: WLCSP16
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| FPF3042UCX |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; 2.25A; Ch: 4; SMD; WLCSP16; reel,tape; -40÷150°C
Operating temperature: -40...150°C
Supply voltage: 4...12.4V DC
On-state resistance: 95mΩ
Output current: 2.25A
Type of integrated circuit: power switch
Number of channels: 4
Active logical level: high
Integrated circuit features: ESD-protected; thermal protection; undervoltage protection
Kind of package: reel; tape
Mounting: SMD
Case: WLCSP16
Anzahl je Verpackung: 3000 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; 2.25A; Ch: 4; SMD; WLCSP16; reel,tape; -40÷150°C
Operating temperature: -40...150°C
Supply voltage: 4...12.4V DC
On-state resistance: 95mΩ
Output current: 2.25A
Type of integrated circuit: power switch
Number of channels: 4
Active logical level: high
Integrated circuit features: ESD-protected; thermal protection; undervoltage protection
Kind of package: reel; tape
Mounting: SMD
Case: WLCSP16
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| FPF3380UCX |
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; 5A; Ch: 1; SMD; WLCSP12; reel,tape; -40÷85°C
Type of integrated circuit: power switch
Supply voltage: 2.8...23V DC
Mounting: SMD
Case: WLCSP12
Integrated circuit features: ESD-protected
Kind of package: reel; tape
Operating temperature: -40...85°C
On-state resistance: 15mΩ
Output current: 5A
Number of channels: 1
Active logical level: low
Anzahl je Verpackung: 4000 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; 5A; Ch: 1; SMD; WLCSP12; reel,tape; -40÷85°C
Type of integrated circuit: power switch
Supply voltage: 2.8...23V DC
Mounting: SMD
Case: WLCSP12
Integrated circuit features: ESD-protected
Kind of package: reel; tape
Operating temperature: -40...85°C
On-state resistance: 15mΩ
Output current: 5A
Number of channels: 1
Active logical level: low
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
| FQA13N50C-F109 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.5A; Idm: 54A; 218W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.5A
Pulsed drain current: 54A
Power dissipation: 218W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.5A; Idm: 54A; 218W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.5A
Pulsed drain current: 54A
Power dissipation: 218W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FQA13N80-F109 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 50.4A; 300W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Pulsed drain current: 50.4A
Power dissipation: 300W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 50.4A; 300W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Pulsed drain current: 50.4A
Power dissipation: 300W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 15+ | 4.76 EUR |
| FQA140N10 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 99A; Idm: 560A; 375W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 99A
Pulsed drain current: 560A
Power dissipation: 375W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 99A; Idm: 560A; 375W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 99A
Pulsed drain current: 560A
Power dissipation: 375W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FQA24N60 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14.9A; 310W; TO3PN
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14.9A
Power dissipation: 310W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14.9A; 310W; TO3PN
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14.9A
Power dissipation: 310W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FQA40N25 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; Idm: 160A; 280W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 25A
Pulsed drain current: 160A
Power dissipation: 280W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; Idm: 160A; 280W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 25A
Pulsed drain current: 160A
Power dissipation: 280W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 58 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 15+ | 4.93 EUR |
| 21+ | 3.53 EUR |
| 22+ | 3.35 EUR |
| 450+ | 3.29 EUR |
| FQA70N10 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 49.5A; 214W; TO3PN
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 49.5A
Power dissipation: 214W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 49.5A; 214W; TO3PN
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 49.5A
Power dissipation: 214W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 102 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 20+ | 3.7 EUR |
| 22+ | 3.35 EUR |
| 28+ | 2.56 EUR |
| 30+ | 2.42 EUR |
| FQA8N100C |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 5A; 225W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 5A
Power dissipation: 225W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 1.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 5A; 225W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 5A
Power dissipation: 225W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 1.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FQA8N90C-F109 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5.1A; Idm: 32A; 240W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 240W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5.1A; Idm: 32A; 240W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 240W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FQAF16N50 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.15A; 110W; TO3PF
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.15A
Power dissipation: 110W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.15A; 110W; TO3PF
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.15A
Power dissipation: 110W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FQB12P20TM |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -7.27A; 120W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -7.27A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -7.27A; 120W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -7.27A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FQB19N20CTM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; Idm: 76A; 139W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 76A
Drain-source voltage: 200V
Drain current: 12.1A
On-state resistance: 0.17Ω
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Gate charge: 53nC
Technology: QFET®
Kind of channel: enhanced
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; Idm: 76A; 139W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 76A
Drain-source voltage: 200V
Drain current: 12.1A
On-state resistance: 0.17Ω
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Gate charge: 53nC
Technology: QFET®
Kind of channel: enhanced
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FQB19N20LTM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 13.3A; Idm: 84A; 140W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 84A
Drain-source voltage: 200V
Drain current: 13.3A
On-state resistance: 0.15Ω
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Gate charge: 35nC
Technology: QFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 13.3A; Idm: 84A; 140W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 84A
Drain-source voltage: 200V
Drain current: 13.3A
On-state resistance: 0.15Ω
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Gate charge: 35nC
Technology: QFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 41 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 37+ | 1.94 EUR |
| 41+ | 1.74 EUR |
| FQB19N20TM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12.3A; Idm: 78A; 140W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 78A
Drain-source voltage: 200V
Drain current: 12.3A
On-state resistance: 0.15Ω
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Gate charge: 40nC
Technology: QFET®
Kind of channel: enhanced
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12.3A; Idm: 78A; 140W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 78A
Drain-source voltage: 200V
Drain current: 12.3A
On-state resistance: 0.15Ω
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Gate charge: 40nC
Technology: QFET®
Kind of channel: enhanced
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FQB22P10TM |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15.6A; 125W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15.6A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15.6A; 125W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15.6A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FQB27P06TM |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -19.1A; 120W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -19.1A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -19.1A; 120W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -19.1A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FQB33N10LTM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; Idm: 132A; 127W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Pulsed drain current: 132A
Power dissipation: 127W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; Idm: 132A; 127W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Pulsed drain current: 132A
Power dissipation: 127W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FQB33N10TM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; 127W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Power dissipation: 127W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; 127W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Power dissipation: 127W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 52mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FQB34N20LTM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 20A; 180W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Power dissipation: 180W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 20A; 180W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Power dissipation: 180W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
| FQB34P10TM |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23.5A; 155W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23.5A
Power dissipation: 155W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23.5A; 155W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23.5A
Power dissipation: 155W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 664 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 20+ | 3.59 EUR |
| 23+ | 3.2 EUR |
| 29+ | 2.47 EUR |
| 31+ | 2.35 EUR |
| FQB44N10TM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30.8A; 146W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30.8A
Power dissipation: 146W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 39mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30.8A; 146W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30.8A
Power dissipation: 146W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 39mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FQB47P06TM-AM002 |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -33.2A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -33.2A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FQB4N80TM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; 130W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Power dissipation: 130W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; 130W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Power dissipation: 130W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FQB50N06TM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35.4A; Idm: 200A; 120W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35.4A
Pulsed drain current: 200A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35.4A; Idm: 200A; 120W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35.4A
Pulsed drain current: 200A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FQB55N10TM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 38.9A; 155W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 38.9A
Power dissipation: 155W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 98nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 38.9A; 155W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 38.9A
Power dissipation: 155W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 98nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 800 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 27+ | 2.67 EUR |
| 30+ | 2.43 EUR |
| 39+ | 1.86 EUR |
| 41+ | 1.76 EUR |
| FQB5N50CTM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; 73W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Power dissipation: 73W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; 73W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Power dissipation: 73W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FQB5N90TM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.42A; 158W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.42A
Power dissipation: 158W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.42A; 158W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.42A
Power dissipation: 158W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 777 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 21+ | 3.47 EUR |
| 24+ | 3.07 EUR |
| 31+ | 2.37 EUR |
| 32+ | 2.25 EUR |
| FQB7P20TM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; -4.6A; Idm: -29.2A; 90W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: -4.6A
Pulsed drain current: -29.2A
Power dissipation: 90W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.69Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; -4.6A; Idm: -29.2A; 90W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: -4.6A
Pulsed drain current: -29.2A
Power dissipation: 90W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.69Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FQB8N60CTM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 30A; 147W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.6A
Pulsed drain current: 30A
Power dissipation: 147W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 30A; 147W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.6A
Pulsed drain current: 30A
Power dissipation: 147W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FQB8N90CTM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.8A; Idm: 25A; 171W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.8A
Pulsed drain current: 25A
Power dissipation: 171W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.8A; Idm: 25A; 171W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.8A
Pulsed drain current: 25A
Power dissipation: 171W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FQB8P10TM |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -5.7A; Idm: -32A; 65W; D2PAK
Type of transistor: P-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: -32A
Mounting: SMD
Case: D2PAK
Drain-source voltage: -100V
Drain current: -5.7A
On-state resistance: 530mΩ
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -5.7A; Idm: -32A; 65W; D2PAK
Type of transistor: P-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: -32A
Mounting: SMD
Case: D2PAK
Drain-source voltage: -100V
Drain current: -5.7A
On-state resistance: 530mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FQD10N20CTM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 50W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 50W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FQD11P06TM |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.95A; 38W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.95A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.185Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.95A; 38W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.95A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.185Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1487 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 38+ | 1.9 EUR |
| 69+ | 1.05 EUR |
| 90+ | 0.8 EUR |
| 95+ | 0.76 EUR |
| 500+ | 0.74 EUR |
| FQD12N20LTM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; 55W; DPAK
Mounting: SMD
Drain-source voltage: 200V
Drain current: 5.7A
On-state resistance: 0.32Ω
Type of transistor: N-MOSFET
Power dissipation: 55W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21nC
Technology: QFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: DPAK
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; 55W; DPAK
Mounting: SMD
Drain-source voltage: 200V
Drain current: 5.7A
On-state resistance: 0.32Ω
Type of transistor: N-MOSFET
Power dissipation: 55W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21nC
Technology: QFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: DPAK
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2236 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 71+ | 1.02 EUR |
| 77+ | 0.93 EUR |
| 96+ | 0.75 EUR |
| 139+ | 0.51 EUR |
| 148+ | 0.49 EUR |
| 2500+ | 0.47 EUR |