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FQB12P20TM onsemi
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Description: MOSFET P-CH 200V 11.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 470mOhm @ 5.75A, 10V
Power Dissipation (Max): 3.13W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 494 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.15 EUR |
10+ | 2.62 EUR |
100+ | 2.09 EUR |
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Technische Details FQB12P20TM onsemi
Description: MOSFET P-CH 200V 11.5A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc), Rds On (Max) @ Id, Vgs: 470mOhm @ 5.75A, 10V, Power Dissipation (Max): 3.13W (Ta), 120W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V.
Weitere Produktangebote FQB12P20TM nach Preis ab 1.55 EUR bis 3.2 EUR
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FQB12P20TM | Hersteller : onsemi / Fairchild |
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auf Bestellung 34200 Stücke: Lieferzeit 262-266 Tag (e) |
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FQB12P20TM | Hersteller : Fairchild |
![]() Anzahl je Verpackung: 10 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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FQB12P20TM | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FQB12P20TM | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FQB12P20TM | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FQB12P20TM | Hersteller : ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -7.27A; 120W; D2PAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -200V Drain current: -7.27A Power dissipation: 120W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 470mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQB12P20TM | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 470mOhm @ 5.75A, 10V Power Dissipation (Max): 3.13W (Ta), 120W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQB12P20TM | Hersteller : ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -7.27A; 120W; D2PAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -200V Drain current: -7.27A Power dissipation: 120W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 470mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |