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FQB5N90TM onsemi
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Description: MOSFET N-CH 900V 5.4A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2.7A, 10V
Power Dissipation (Max): 3.13W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
auf Bestellung 58400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
800+ | 2.88 EUR |
1600+ | 2.46 EUR |
2400+ | 2.32 EUR |
5600+ | 2.22 EUR |
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Technische Details FQB5N90TM onsemi
Description: MOSFET N-CH 900V 5.4A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc), Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2.7A, 10V, Power Dissipation (Max): 3.13W (Ta), 158W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V.
Weitere Produktangebote FQB5N90TM nach Preis ab 2.25 EUR bis 4.75 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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FQB5N90TM | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 900V; 3.42A; 158W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 900V Drain current: 3.42A Power dissipation: 158W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 2.3Ω Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 777 Stücke: Lieferzeit 7-14 Tag (e) |
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FQB5N90TM | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 900V; 3.42A; 158W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 900V Drain current: 3.42A Power dissipation: 158W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 2.3Ω Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 777 Stücke: Lieferzeit 14-21 Tag (e) |
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FQB5N90TM | Hersteller : onsemi / Fairchild |
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auf Bestellung 17151 Stücke: Lieferzeit 10-14 Tag (e) |
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FQB5N90TM | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2.7A, 10V Power Dissipation (Max): 3.13W (Ta), 158W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V |
auf Bestellung 58821 Stücke: Lieferzeit 10-14 Tag (e) |
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FQB5N90TM | Hersteller : ON Semiconductor |
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auf Bestellung 24800 Stücke: Lieferzeit 14-21 Tag (e) |