Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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FQD12N20LTM-F085 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 5.7A Pulsed drain current: 36A Power dissipation: 55W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQD12N20TM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 5.7A Pulsed drain current: 36A Power dissipation: 55W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQD12P10TM-F085 | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -6A; Idm: -37.6A; 50W; DPAK Mounting: SMD Case: DPAK Kind of package: reel; tape Power dissipation: 50W Application: automotive industry Drain current: -6A Kind of channel: enhanced Drain-source voltage: -100V Type of transistor: P-MOSFET Gate-source voltage: ±30V On-state resistance: 0.29Ω Pulsed drain current: -37.6A Gate charge: 27nC Polarisation: unipolar Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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FQD13N06LTM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 28W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 7A Power dissipation: 28W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.145Ω Mounting: SMD Gate charge: 6.4nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2345 Stücke: Lieferzeit 7-14 Tag (e) |
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FQD13N10LTM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 6.3A Power dissipation: 40W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQD13N10TM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 6.3A Power dissipation: 40W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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FQD16N25CTM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 10.1A; 160W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 250V Drain current: 10.1A Power dissipation: 160W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.27Ω Mounting: SMD Gate charge: 53.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQD17N08LTM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 8.2A; Idm: 51.6A; 40W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 8.2A Pulsed drain current: 51.6A Power dissipation: 40W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.115Ω Mounting: SMD Gate charge: 11.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQD17P06TM | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -7.6A; 44W; DPAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -7.6A Power dissipation: 44W Case: DPAK Gate-source voltage: ±25V On-state resistance: 135mΩ Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3548 Stücke: Lieferzeit 7-14 Tag (e) |
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FQD18N20V2TM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 9.75A; 83W; DPAK Case: DPAK Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 200V Drain current: 9.75A On-state resistance: 0.14Ω Type of transistor: N-MOSFET Power dissipation: 83W Polarisation: unipolar Gate charge: 26nC Technology: QFET® Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQD19N10LTM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 9.8A; 50W; DPAK Case: DPAK Mounting: SMD Kind of package: reel; tape Drain-source voltage: 100V Drain current: 9.8A On-state resistance: 0.11Ω Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Gate charge: 18nC Technology: QFET® Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2340 Stücke: Lieferzeit 7-14 Tag (e) |
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FQD19N10TM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 9.8A; Idm: 62.4A; 50W; DPAK Case: DPAK Mounting: SMD Kind of package: reel; tape Pulsed drain current: 62.4A Drain-source voltage: 100V Drain current: 9.8A On-state resistance: 0.1Ω Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Gate charge: 25nC Technology: QFET® Kind of channel: enhanced Gate-source voltage: ±25V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQD1N60CTM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 0.6A; 28W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.6A Power dissipation: 28W Case: DPAK Gate-source voltage: ±30V On-state resistance: 11.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQD2N60CTM-WS | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 1.14A; Idm: 7.6A; 44W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.14A Pulsed drain current: 7.6A Power dissipation: 44W Case: DPAK Gate-source voltage: ±30V On-state resistance: 4.7Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQD2N90TM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Kind of package: reel; tape Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 6.8A Mounting: SMD Case: DPAK Drain-source voltage: 900V Drain current: 1.08A On-state resistance: 7.2Ω Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQD2P40TM | ONSEMI |
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Produkt ist nicht verfügbar |
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FQD30N06TM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 14.3A; Idm: 90.8A; 44W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14.3A Pulsed drain current: 90.8A Power dissipation: 44W Case: DPAK Gate-source voltage: ±25V On-state resistance: 45mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQD3N60CTM-WS | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 1.5A; Idm: 9.6A; 50W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.5A Pulsed drain current: 9.6A Power dissipation: 50W Case: DPAK Gate-source voltage: ±30V On-state resistance: 3.4Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQD3P50TM | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; 50W; DPAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -500V Drain current: -1.33A Power dissipation: 50W Case: DPAK Gate-source voltage: ±30V On-state resistance: 4.9Ω Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2315 Stücke: Lieferzeit 7-14 Tag (e) |
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FQD3P50TM-AM002BLT | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; Idm: -8.4A; 50W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -500V Drain current: -1.33A Pulsed drain current: -8.4A Power dissipation: 50W Case: DPAK Gate-source voltage: ±30V On-state resistance: 4.9Ω Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQD3P50TM-F085 | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; Idm: -8.4A; 50W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -500V Drain current: -1.33A Pulsed drain current: -8.4A Power dissipation: 50W Case: DPAK Gate-source voltage: ±30V On-state resistance: 4.9Ω Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQD4N20TM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 1.95A; Idm: 12A; 30W; DPAK Mounting: SMD Gate charge: 6.5nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 12A Case: DPAK Drain-source voltage: 200V Drain current: 1.95A On-state resistance: 1.4Ω Type of transistor: N-MOSFET Power dissipation: 30W Polarisation: unipolar Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQD4N25TM-WS | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 1.9A; Idm: 12A; 37W; DPAK Mounting: SMD Power dissipation: 37W Polarisation: unipolar Kind of package: reel; tape Gate charge: 5.6nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 12A Case: DPAK Drain-source voltage: 250V Drain current: 1.9A On-state resistance: 1.75Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQD4P25TM-WS | ONSEMI |
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Produkt ist nicht verfügbar |
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FQD4P40TM | ONSEMI |
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Produkt ist nicht verfügbar |
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FQD5N15TM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 2.72A; Idm: 17.2A; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 2.72A Pulsed drain current: 17.2A Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.8Ω Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQD5N20LTM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 2.4A; Idm: 15.2A; 37W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 2.4A Pulsed drain current: 15.2A Power dissipation: 37W Case: DPAK Gate-source voltage: ±20V On-state resistance: 1.25Ω Mounting: SMD Gate charge: 6.2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQD5N60CTM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 1.8A; 49W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.8A Power dissipation: 49W Case: DPAK Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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FQD5P10TM | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -2.28A; Idm: -14.4A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -2.28A Pulsed drain current: -14.4A Power dissipation: 25W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1.05Ω Mounting: SMD Gate charge: 8.2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQD5P20TM | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -2.34A; 45W; DPAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -200V Drain current: -2.34A Power dissipation: 45W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1400 Stücke: Lieferzeit 7-14 Tag (e) |
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FQD6N25TM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 2.6A; Idm: 17.6A; 45W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 2.6A Pulsed drain current: 17.6A Power dissipation: 45W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: SMD Gate charge: 8.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQD6N40CTM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 2.7A; 48W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 400V Drain current: 2.7A Power dissipation: 48W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQD6N50CTM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 2.7A; Idm: 18A; 61W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.7A Pulsed drain current: 18A Power dissipation: 61W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQD7N20LTM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 3.48A; Idm: 22A; 45W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 3.48A Pulsed drain current: 22A Power dissipation: 45W Case: DPAK Gate-source voltage: ±20V On-state resistance: 780mΩ Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQD7N30TM | ONSEMI |
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Produkt ist nicht verfügbar |
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FQD7P06TM | ONSEMI |
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Produkt ist nicht verfügbar |
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FQD7P20TM | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -3.6A; 55W; DPAK Type of transistor: P-MOSFET Mounting: SMD Case: DPAK On-state resistance: 0.69Ω Kind of package: reel; tape Technology: QFET® Power dissipation: 55W Polarisation: unipolar Gate charge: 25nC Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: -200V Drain current: -3.6A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQD8P10TM | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 44W; DPAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -4.2A Power dissipation: 44W Case: DPAK Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQD8P10TM-F085 | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; Idm: -26.4A; 44W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -4.2A Pulsed drain current: -26.4A Power dissipation: 44W Case: DPAK Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQD9N25TM-F080 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 4.7A; Idm: 29.6A; 55W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 250V Drain current: 4.7A Pulsed drain current: 29.6A Power dissipation: 55W Case: DPAK Gate-source voltage: ±30V On-state resistance: 420mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQH8N100C | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 5A; Idm: 32A; 225W; TO247 Mounting: THT Case: TO247 Kind of package: tube Power dissipation: 225W Polarisation: unipolar Gate charge: 70nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 32A Drain-source voltage: 1kV Drain current: 5A On-state resistance: 1.45Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQI13N50CTU | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 52A; 195W; I2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8A Pulsed drain current: 52A Power dissipation: 195W Case: I2PAK Gate-source voltage: ±30V On-state resistance: 0.48Ω Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQI27N25TU | ONSEMI |
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Produkt ist nicht verfügbar |
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FQI4N80TU | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W; I2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.47A Pulsed drain current: 15.6A Power dissipation: 130W Case: I2PAK Gate-source voltage: ±30V On-state resistance: 3.6Ω Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQI4N90TU | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 900V; 2.65A; Idm: 16.8A; 140W; I2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 2.65A Pulsed drain current: 16.8A Power dissipation: 140W Case: I2PAK Gate-source voltage: ±30V On-state resistance: 3.3Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQI5N60CTU | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 600V; 2.6A; Idm: 18A; 100W; I2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.6A Pulsed drain current: 18A Power dissipation: 100W Case: I2PAK Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQI7N80TU | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 4.2A; Idm: 26.4A; 167W; I2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.2A Pulsed drain current: 26.4A Power dissipation: 167W Case: I2PAK Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Gate charge: 52nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQL40N50F | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 25A; Idm: 160A; 460W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 25A Pulsed drain current: 160A Power dissipation: 460W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQN1N50CTA | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 240mA; Idm: 3.04A; 2.08W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 0.24A Pulsed drain current: 3.04A Power dissipation: 2.08W Case: TO92 Gate-source voltage: ±30V On-state resistance: 6Ω Mounting: THT Gate charge: 6.4nC Kind of package: Ammo Pack Kind of channel: enhanced Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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FQN1N60CTA | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 600V; 0.18A; 1W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.18A Power dissipation: 1W Case: TO92 Gate-source voltage: ±30V On-state resistance: 11.5Ω Mounting: THT Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQNL2N50BTA | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 220mA; Idm: 1.4A; 1.5W; TO92L Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 500V Drain current: 0.22A Pulsed drain current: 1.4A Power dissipation: 1.5W Case: TO92L Gate-source voltage: ±30V On-state resistance: 5.3Ω Mounting: THT Gate charge: 8nC Kind of package: Ammo Pack Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQP10N20C | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 6A; Idm: 38A; 72W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 6A Pulsed drain current: 38A Power dissipation: 72W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: THT Gate charge: 26nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQP11N40C | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; 135W; TO220AB Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.6A Power dissipation: 135W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 63 Stücke: Lieferzeit 7-14 Tag (e) |
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FQP12P10 | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -8.1A; Idm: -46A; 75W Mounting: THT Case: TO220AB Kind of package: tube Power dissipation: 75W Drain current: -8.1A Kind of channel: enhanced Drain-source voltage: -100V Type of transistor: P-MOSFET Gate-source voltage: ±30V On-state resistance: 0.29Ω Pulsed drain current: -46A Gate charge: 27nC Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQP14N30 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 300V; 9.1A; Idm: 57.6A; 147W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 9.1A Pulsed drain current: 57.6A Power dissipation: 147W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 290mΩ Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQP15P12 | ONSEMI |
![]() ![]() Description: Transistor: P-MOSFET; unipolar; -120V; -10.6A; Idm: -60A; 100W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -120V Drain current: -10.6A Pulsed drain current: -60A Power dissipation: 100W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 200mΩ Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQP16N25 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 10A; Idm: 64A; 142W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 10A Pulsed drain current: 64A Power dissipation: 142W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.23Ω Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQP17P06 | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 79W; TO220AB Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -12A Power dissipation: 79W Case: TO220AB Gate-source voltage: ±25V On-state resistance: 0.12Ω Mounting: THT Gate charge: 27nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQP24N08 | ONSEMI |
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Produkt ist nicht verfügbar |
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FQP27P06 | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -27A; TO220AB Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -27A Case: TO220AB Gate-source voltage: ±25V On-state resistance: 70mΩ Mounting: THT Gate charge: 43nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
FQD12N20LTM-F085 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQD12N20TM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Pulsed drain current: 36A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQD12P10TM-F085 |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6A; Idm: -37.6A; 50W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Power dissipation: 50W
Application: automotive industry
Drain current: -6A
Kind of channel: enhanced
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Pulsed drain current: -37.6A
Gate charge: 27nC
Polarisation: unipolar
Anzahl je Verpackung: 2500 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6A; Idm: -37.6A; 50W; DPAK
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Power dissipation: 50W
Application: automotive industry
Drain current: -6A
Kind of channel: enhanced
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Pulsed drain current: -37.6A
Gate charge: 27nC
Polarisation: unipolar
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
FQD13N06LTM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 28W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Power dissipation: 28W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 6.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 28W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Power dissipation: 28W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 6.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2345 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
82+ | 0.87 EUR |
113+ | 0.64 EUR |
125+ | 0.57 EUR |
163+ | 0.44 EUR |
172+ | 0.42 EUR |
FQD13N10LTM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.3A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.3A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQD13N10TM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.3A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.3A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
FQD16N25CTM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10.1A; 160W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 10.1A
Power dissipation: 160W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 53.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10.1A; 160W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 10.1A
Power dissipation: 160W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 53.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQD17N08LTM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 8.2A; Idm: 51.6A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 8.2A
Pulsed drain current: 51.6A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.115Ω
Mounting: SMD
Gate charge: 11.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 8.2A; Idm: 51.6A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 8.2A
Pulsed drain current: 51.6A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.115Ω
Mounting: SMD
Gate charge: 11.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQD17P06TM |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.6A; 44W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -7.6A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.6A; 44W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -7.6A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3548 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
63+ | 1.14 EUR |
77+ | 0.94 EUR |
99+ | 0.73 EUR |
105+ | 0.69 EUR |
FQD18N20V2TM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.75A; 83W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 200V
Drain current: 9.75A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Gate charge: 26nC
Technology: QFET®
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.75A; 83W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 200V
Drain current: 9.75A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Gate charge: 26nC
Technology: QFET®
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQD19N10LTM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.8A; 50W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 9.8A
On-state resistance: 0.11Ω
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Gate charge: 18nC
Technology: QFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.8A; 50W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 9.8A
On-state resistance: 0.11Ω
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Gate charge: 18nC
Technology: QFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2340 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
42+ | 1.73 EUR |
73+ | 0.98 EUR |
104+ | 0.69 EUR |
110+ | 0.65 EUR |
FQD19N10TM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.8A; Idm: 62.4A; 50W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 62.4A
Drain-source voltage: 100V
Drain current: 9.8A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Gate charge: 25nC
Technology: QFET®
Kind of channel: enhanced
Gate-source voltage: ±25V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.8A; Idm: 62.4A; 50W; DPAK
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 62.4A
Drain-source voltage: 100V
Drain current: 9.8A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Gate charge: 25nC
Technology: QFET®
Kind of channel: enhanced
Gate-source voltage: ±25V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQD1N60CTM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.6A; 28W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.6A
Power dissipation: 28W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 11.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.6A; 28W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.6A
Power dissipation: 28W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 11.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQD2N60CTM-WS |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.14A; Idm: 7.6A; 44W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.14A
Pulsed drain current: 7.6A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.7Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.14A; Idm: 7.6A; 44W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.14A
Pulsed drain current: 7.6A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.7Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQD2N90TM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 6.8A
Mounting: SMD
Case: DPAK
Drain-source voltage: 900V
Drain current: 1.08A
On-state resistance: 7.2Ω
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 6.8A
Mounting: SMD
Case: DPAK
Drain-source voltage: 900V
Drain current: 1.08A
On-state resistance: 7.2Ω
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQD30N06TM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14.3A; Idm: 90.8A; 44W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14.3A
Pulsed drain current: 90.8A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14.3A; Idm: 90.8A; 44W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14.3A
Pulsed drain current: 90.8A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQD3N60CTM-WS |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.5A; Idm: 9.6A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.5A
Pulsed drain current: 9.6A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.5A; Idm: 9.6A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.5A
Pulsed drain current: 9.6A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQD3P50TM |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; 50W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -1.33A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; 50W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -1.33A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2315 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
58+ | 1.24 EUR |
64+ | 1.13 EUR |
77+ | 0.93 EUR |
82+ | 0.87 EUR |
500+ | 0.84 EUR |
FQD3P50TM-AM002BLT |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; Idm: -8.4A; 50W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -1.33A
Pulsed drain current: -8.4A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; Idm: -8.4A; 50W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -1.33A
Pulsed drain current: -8.4A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQD3P50TM-F085 |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; Idm: -8.4A; 50W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -1.33A
Pulsed drain current: -8.4A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; Idm: -8.4A; 50W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -1.33A
Pulsed drain current: -8.4A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQD4N20TM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 1.95A; Idm: 12A; 30W; DPAK
Mounting: SMD
Gate charge: 6.5nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 12A
Case: DPAK
Drain-source voltage: 200V
Drain current: 1.95A
On-state resistance: 1.4Ω
Type of transistor: N-MOSFET
Power dissipation: 30W
Polarisation: unipolar
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 1.95A; Idm: 12A; 30W; DPAK
Mounting: SMD
Gate charge: 6.5nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 12A
Case: DPAK
Drain-source voltage: 200V
Drain current: 1.95A
On-state resistance: 1.4Ω
Type of transistor: N-MOSFET
Power dissipation: 30W
Polarisation: unipolar
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQD4N25TM-WS |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 1.9A; Idm: 12A; 37W; DPAK
Mounting: SMD
Power dissipation: 37W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.6nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 12A
Case: DPAK
Drain-source voltage: 250V
Drain current: 1.9A
On-state resistance: 1.75Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 1.9A; Idm: 12A; 37W; DPAK
Mounting: SMD
Power dissipation: 37W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.6nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 12A
Case: DPAK
Drain-source voltage: 250V
Drain current: 1.9A
On-state resistance: 1.75Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQD5N15TM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.72A; Idm: 17.2A; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 2.72A
Pulsed drain current: 17.2A
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.72A; Idm: 17.2A; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 2.72A
Pulsed drain current: 17.2A
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQD5N20LTM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 2.4A; Idm: 15.2A; 37W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 2.4A
Pulsed drain current: 15.2A
Power dissipation: 37W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.25Ω
Mounting: SMD
Gate charge: 6.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 2.4A; Idm: 15.2A; 37W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 2.4A
Pulsed drain current: 15.2A
Power dissipation: 37W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.25Ω
Mounting: SMD
Gate charge: 6.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQD5N60CTM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.8A; 49W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.8A
Power dissipation: 49W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.8A; 49W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.8A
Power dissipation: 49W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
FQD5P10TM |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2.28A; Idm: -14.4A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -2.28A
Pulsed drain current: -14.4A
Power dissipation: 25W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2.28A; Idm: -14.4A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -2.28A
Pulsed drain current: -14.4A
Power dissipation: 25W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQD5P20TM |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.34A; 45W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.34A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.34A; 45W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.34A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1400 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
56+ | 1.29 EUR |
87+ | 0.83 EUR |
109+ | 0.66 EUR |
125+ | 0.57 EUR |
132+ | 0.54 EUR |
FQD6N25TM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 2.6A; Idm: 17.6A; 45W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 2.6A
Pulsed drain current: 17.6A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 8.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 2.6A; Idm: 17.6A; 45W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 2.6A
Pulsed drain current: 17.6A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 8.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQD6N40CTM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2.7A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2.7A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 2.7A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 2.7A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQD6N50CTM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.7A; Idm: 18A; 61W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.7A
Pulsed drain current: 18A
Power dissipation: 61W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.7A; Idm: 18A; 61W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.7A
Pulsed drain current: 18A
Power dissipation: 61W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQD7N20LTM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.48A; Idm: 22A; 45W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3.48A
Pulsed drain current: 22A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 780mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3.48A; Idm: 22A; 45W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3.48A
Pulsed drain current: 22A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 780mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQD7P20TM |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.6A; 55W; DPAK
Type of transistor: P-MOSFET
Mounting: SMD
Case: DPAK
On-state resistance: 0.69Ω
Kind of package: reel; tape
Technology: QFET®
Power dissipation: 55W
Polarisation: unipolar
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: -200V
Drain current: -3.6A
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -3.6A; 55W; DPAK
Type of transistor: P-MOSFET
Mounting: SMD
Case: DPAK
On-state resistance: 0.69Ω
Kind of package: reel; tape
Technology: QFET®
Power dissipation: 55W
Polarisation: unipolar
Gate charge: 25nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: -200V
Drain current: -3.6A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQD8P10TM |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 44W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.2A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 44W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.2A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQD8P10TM-F085 |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; Idm: -26.4A; 44W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.2A
Pulsed drain current: -26.4A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; Idm: -26.4A; 44W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.2A
Pulsed drain current: -26.4A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQD9N25TM-F080 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.7A; Idm: 29.6A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.7A
Pulsed drain current: 29.6A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 420mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.7A; Idm: 29.6A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.7A
Pulsed drain current: 29.6A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 420mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQH8N100C |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 5A; Idm: 32A; 225W; TO247
Mounting: THT
Case: TO247
Kind of package: tube
Power dissipation: 225W
Polarisation: unipolar
Gate charge: 70nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 32A
Drain-source voltage: 1kV
Drain current: 5A
On-state resistance: 1.45Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 5A; Idm: 32A; 225W; TO247
Mounting: THT
Case: TO247
Kind of package: tube
Power dissipation: 225W
Polarisation: unipolar
Gate charge: 70nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 32A
Drain-source voltage: 1kV
Drain current: 5A
On-state resistance: 1.45Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQI13N50CTU |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 52A; 195W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 52A
Power dissipation: 195W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 52A; 195W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 52A
Power dissipation: 195W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQI4N80TU |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Pulsed drain current: 15.6A
Power dissipation: 130W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.47A; Idm: 15.6A; 130W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.47A
Pulsed drain current: 15.6A
Power dissipation: 130W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQI4N90TU |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.65A; Idm: 16.8A; 140W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.65A
Pulsed drain current: 16.8A
Power dissipation: 140W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 3.3Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.65A; Idm: 16.8A; 140W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.65A
Pulsed drain current: 16.8A
Power dissipation: 140W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 3.3Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQI5N60CTU |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.6A; Idm: 18A; 100W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.6A
Pulsed drain current: 18A
Power dissipation: 100W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.6A; Idm: 18A; 100W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.6A
Pulsed drain current: 18A
Power dissipation: 100W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQI7N80TU |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.2A; Idm: 26.4A; 167W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.2A
Pulsed drain current: 26.4A
Power dissipation: 167W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.2A; Idm: 26.4A; 167W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.2A
Pulsed drain current: 26.4A
Power dissipation: 167W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQL40N50F |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 25A; Idm: 160A; 460W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 25A
Pulsed drain current: 160A
Power dissipation: 460W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 25A; Idm: 160A; 460W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 25A
Pulsed drain current: 160A
Power dissipation: 460W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQN1N50CTA |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 240mA; Idm: 3.04A; 2.08W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.24A
Pulsed drain current: 3.04A
Power dissipation: 2.08W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 6Ω
Mounting: THT
Gate charge: 6.4nC
Kind of package: Ammo Pack
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 240mA; Idm: 3.04A; 2.08W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.24A
Pulsed drain current: 3.04A
Power dissipation: 2.08W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 6Ω
Mounting: THT
Gate charge: 6.4nC
Kind of package: Ammo Pack
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
FQN1N60CTA |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.18A; 1W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.18A
Power dissipation: 1W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 11.5Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.18A; 1W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.18A
Power dissipation: 1W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 11.5Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQNL2N50BTA |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 220mA; Idm: 1.4A; 1.5W; TO92L
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.22A
Pulsed drain current: 1.4A
Power dissipation: 1.5W
Case: TO92L
Gate-source voltage: ±30V
On-state resistance: 5.3Ω
Mounting: THT
Gate charge: 8nC
Kind of package: Ammo Pack
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 220mA; Idm: 1.4A; 1.5W; TO92L
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.22A
Pulsed drain current: 1.4A
Power dissipation: 1.5W
Case: TO92L
Gate-source voltage: ±30V
On-state resistance: 5.3Ω
Mounting: THT
Gate charge: 8nC
Kind of package: Ammo Pack
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQP10N20C |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 6A; Idm: 38A; 72W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 6A
Pulsed drain current: 38A
Power dissipation: 72W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 6A; Idm: 38A; 72W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 6A
Pulsed drain current: 38A
Power dissipation: 72W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQP11N40C |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; 135W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.6A
Power dissipation: 135W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; 135W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.6A
Power dissipation: 135W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 63 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 2.57 EUR |
30+ | 2.39 EUR |
43+ | 1.7 EUR |
45+ | 1.6 EUR |
500+ | 1.54 EUR |
FQP12P10 |
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Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.1A; Idm: -46A; 75W
Mounting: THT
Case: TO220AB
Kind of package: tube
Power dissipation: 75W
Drain current: -8.1A
Kind of channel: enhanced
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Pulsed drain current: -46A
Gate charge: 27nC
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.1A; Idm: -46A; 75W
Mounting: THT
Case: TO220AB
Kind of package: tube
Power dissipation: 75W
Drain current: -8.1A
Kind of channel: enhanced
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Pulsed drain current: -46A
Gate charge: 27nC
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQP14N30 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 9.1A; Idm: 57.6A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 9.1A
Pulsed drain current: 57.6A
Power dissipation: 147W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 290mΩ
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 9.1A; Idm: 57.6A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 9.1A
Pulsed drain current: 57.6A
Power dissipation: 147W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 290mΩ
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQP15P12 |
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Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -120V; -10.6A; Idm: -60A; 100W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -120V
Drain current: -10.6A
Pulsed drain current: -60A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 200mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -120V; -10.6A; Idm: -60A; 100W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -120V
Drain current: -10.6A
Pulsed drain current: -60A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 200mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQP16N25 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10A; Idm: 64A; 142W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 10A
Pulsed drain current: 64A
Power dissipation: 142W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10A; Idm: 64A; 142W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 10A
Pulsed drain current: 64A
Power dissipation: 142W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQP17P06 |
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Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 79W; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -12A
Power dissipation: 79W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 79W; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -12A
Power dissipation: 79W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQP27P06 |
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Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -27A; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -27A
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -27A; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -27A
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar