FQI4N90TU Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: POWER FIELD-EFFECT TRANSISTOR, 4
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 2.1A, 10V
Power Dissipation (Max): 3.13W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK (TO-262)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
auf Bestellung 1302 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 254+ | 2.00 EUR |
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Technische Details FQI4N90TU Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 4, Packaging: Bulk, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc), Rds On (Max) @ Id, Vgs: 3.3Ohm @ 2.1A, 10V, Power Dissipation (Max): 3.13W (Ta), 140W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: I2PAK (TO-262), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V.
Weitere Produktangebote FQI4N90TU nach Preis ab 2.00 EUR bis 2.00 EUR
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FQI4N90TU | Hersteller : onsemi |
Description: MOSFET N-CH 900V 4.2A I2PAK Packaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc) Rds On (Max) @ Id, Vgs: 3.3Ohm @ 2.1A, 10V Power Dissipation (Max): 3.13W (Ta), 140W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-262 (I2PAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V |
auf Bestellung 3792 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQI4N90TU | Hersteller : Fairchild |
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auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) |
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| FQI4N90TU | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 2.65A; Idm: 16.8A; 140W; I2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 2.65A Case: I2PAK Gate-source voltage: ±30V On-state resistance: 3.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 16.8A Power dissipation: 140W Gate charge: 30nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQI4N90TU | Hersteller : onsemi |
Description: MOSFET N-CH 900V 4.2A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc) Rds On (Max) @ Id, Vgs: 3.3Ohm @ 2.1A, 10V Power Dissipation (Max): 3.13W (Ta), 140W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-262 (I2PAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V |
Produkt ist nicht verfügbar |
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| FQI4N90TU | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 2.65A; Idm: 16.8A; 140W; I2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 2.65A Case: I2PAK Gate-source voltage: ±30V On-state resistance: 3.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 16.8A Power dissipation: 140W Gate charge: 30nC |
Produkt ist nicht verfügbar |