FQD8P10TM onsemi
Hersteller: onsemiDescription: MOSFET P-CH 100V 6.6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 530mOhm @ 3.3A, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
auf Bestellung 2164 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 14+ | 1.28 EUR |
| 16+ | 1.11 EUR |
| 100+ | 0.77 EUR |
| 500+ | 0.64 EUR |
| 1000+ | 0.55 EUR |
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Technische Details FQD8P10TM onsemi
Description: MOSFET P-CH 100V 6.6A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc), Rds On (Max) @ Id, Vgs: 530mOhm @ 3.3A, 10V, Power Dissipation (Max): 2.5W (Ta), 44W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V.
Weitere Produktangebote FQD8P10TM nach Preis ab 0.51 EUR bis 1.33 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FQD8P10TM | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 100V 6.6A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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| FQD8P10TM | Hersteller : ON-Semicoductor |
P-MOSFET 6.6A 100V 44W 0.53Ω FQD8P10TM TFQD8p10tm Anzahl je Verpackung: 10 Stücke |
auf Bestellung 32 Stücke: Lieferzeit 7-14 Tag (e) |
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FQD8P10TM | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 100V 6.6A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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FQD8P10TM | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 100V 6.6A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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FQD8P10TM | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 100V 6.6A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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FQD8P10TM | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 44W; DPAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -4.2A Power dissipation: 44W Case: DPAK Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQD8P10TM | Hersteller : onsemi |
Description: MOSFET P-CH 100V 6.6A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc) Rds On (Max) @ Id, Vgs: 530mOhm @ 3.3A, 10V Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQD8P10TM | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 44W; DPAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -4.2A Power dissipation: 44W Case: DPAK Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |