![FQI7N80TU FQI7N80TU](https://www.mouser.com/images/mouserelectronics/lrg/TO_262_3_DSL.jpg)
auf Bestellung 2997 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 4.91 EUR |
10+ | 4.44 EUR |
25+ | 4.31 EUR |
100+ | 3.68 EUR |
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Technische Details FQI7N80TU onsemi / Fairchild
Description: MOSFET N-CH 800V 6.6A I2PAK, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.3A, 10V, Power Dissipation (Max): 3.13W (Ta), 167W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-262 (I2PAK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V.
Weitere Produktangebote FQI7N80TU
Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis ohne MwSt |
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FQI7N80TU | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FQI7N80TU | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 4.2A; Idm: 26.4A; 167W; I2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.2A Pulsed drain current: 26.4A Power dissipation: 167W Case: I2PAK Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Gate charge: 52nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQI7N80TU | Hersteller : onsemi |
![]() Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.3A, 10V Power Dissipation (Max): 3.13W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-262 (I2PAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQI7N80TU | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 4.2A; Idm: 26.4A; 167W; I2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.2A Pulsed drain current: 26.4A Power dissipation: 167W Case: I2PAK Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Gate charge: 52nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |