auf Bestellung 25982 Stücke:
Lieferzeit 185-189 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 3.04 EUR |
| 10+ | 2.53 EUR |
| 100+ | 2.01 EUR |
| 250+ | 1.85 EUR |
| 500+ | 1.69 EUR |
| 1000+ | 1.47 EUR |
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Technische Details FQP17P06 onsemi / Fairchild
Description: MOSFET P-CH 60V 17A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 8.5A, 10V, Power Dissipation (Max): 79W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V.
Weitere Produktangebote FQP17P06 nach Preis ab 2.47 EUR bis 3.08 EUR
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FQP17P06 | Hersteller : onsemi |
 Description: MOSFET P-CH 60V 17A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 8.5A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V |
auf Bestellung 85 Stücke: Lieferzeit 10-14 Tag (e) |
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FQP17P06 Produktcode: 126278 |
Transistoren > Transistoren P-Kanal-Feld |
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FQP17P06 | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 60V 17A 3-Pin(3+Tab) TO-220 Tube |
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FQP17P06 | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 60V 17A 3-Pin(3+Tab) TO-220 Tube |
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FQP17P06 | Hersteller : ONSEMI |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 79W; TO220AB Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -12A Power dissipation: 79W Case: TO220AB Gate-source voltage: ±25V On-state resistance: 0.12Ω Mounting: THT Gate charge: 27nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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FQP17P06 | Hersteller : ONSEMI |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 79W; TO220AB Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -12A Power dissipation: 79W Case: TO220AB Gate-source voltage: ±25V On-state resistance: 0.12Ω Mounting: THT Gate charge: 27nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |